FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 1
December 2013
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
Block Diagram
Figure 1. FFB3904 Device Package Figure 2. FFB3904 Internal Connection
Figure 3. FMB3904 Device Package Figure 4. FMB3904 Internal Connection
Figure 5. MMPQ3904 Device Package Figure 6. MMPQ3904 Internal Connection
C1
B2
E2
E1
B1
C2
pin #1
SC70-6
Mark: .1A
E2
B2
C1
C2
B1
E1
SuperSOT-6
Mark: .1A
Dot denotes pin #1
C1
E1
C2
B1
E2
B2
pin #1
C2
E1
C1
B2
E2
B1
SOIC-16
Mark: MMPQ3904
C1C1C2C2C3C3C4
C4
E1 B1 E2 B2E3 B3E4 B4
pin #1
B4E4B3E3B2E2B1E1
C4C4C3C3C2C2C1C1
Description
This device is designed as a general-purpose amplifier
and switch. The useful dynamic range extends to 100 mA
as a switch and to 100 MHz as an amplifier. Sourced
from Process 23.
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 2
Ordering Information
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. These ratings are based on a maximum junction temperature of 150°C. These are steady-state limits. Fairchild
Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Note:
2. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Part Number Top Mark Package Packing Method
FFB3904 .1A SC70 6L Tape and Reel
FMB3904 .1A SSOT 6L Tape and Reel
MMPQ3904 MMPQ3904 SOIC 16L Tape and Reel
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 60 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector Current - Continuous 200 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max. Unit
FFB3904 FMB3904 MMPQ3904
PD
Total Device Dissipation 300 700 1,000 mW
Derate above 25°C2.45.68.0mW/°C
RθJA
Thermal Resistance, Junction to Ambient 415 180
°C/W
Thermal Resistance, Junction to Ambient,
Effective 4 Die 125
Thermal Resistance, Junction to Ambient,
Each Die 240
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
IBL Base Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA
ICEX Collector Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA
On Characteristics(3)
hFE DC Current Gain
FFB3904, FMB3904 IC = 0.1 mA, VCE = 1.0 V 40
MMPQ3904 30
FFB3904, FMB3904 IC = 1.0 mA, VCE = 1.0 V 70
MMPQ3904 50
FFB3904, FMB3904 IC = 10 mA, VCE = 1.0 V 100 300
MMPQ3904 75
All Devices IC = 50 mA, VCE = 1.0 V 60
All Devices IC = 100 mA, VCE = 1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.2 V
IC = 50 mA, IB = 5.0 mA 0.3
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.65 0.85 V
IC = 50 mA, IB = 5.0 mA 0.95
Small-Signal Characteristics (MMPQ3904 only)
fTCurrent Gain-Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 250 MHz
Cob Output Capacitance VCB = 5.0 V, IE = 0,
f = 140 kHz 4.0 pF
Cib Input Capacitance VBE = 0.5 V, IC = 0,
f = 140 kHz 8.0 pF
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 4
Typical Performance Characteristics
Figure 7. Typical Pulsed Current Gain vs.
Collector Current Figure 8. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 9. Base-Emitter Saturation Voltage vs.
Collector Current Figure 10. Base-Emitter On Voltage vs.
Collector Current
Figure 11. Collector Cut-Off Current vs.
Ambient Temperature Figure 12. Capacitance vs. Reverse Bias Voltage
0. 1 1 10 1 00
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
FE
- 40 °C
25 °C
C
V = 5V
CE
125 °C
0.1 1 10 100
0.05
0.1
0.15
I - COLLECTOR CURRENT (mA)
V - COLLECTOR-EMITTER VOLTAGE (V)
CESAT
25 °C
C
β = 10
125 °C
- 40 °C
0.1 1 10 100
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER VOLTAGE (V)
BESAT
C
β = 10
25 °C
125 °C
- 40 °C
0.1 1 10 100
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE-EMITTER ON VOLTAGE (V)
BE(ON)
C
V = 5V
CE
25 °C
125 °C
- 40 °C
25 50 75 100 125 150
0.1
1
10
100
500
T - AMBIENT TEMPERATURE ( C)
I - COLLECTOR CURRENT (nA)
A
V = 30V
CB
CBO
°
0.1 1 10 100
1
2
3
4
5
10
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cob
C
ib
f = 1.0 MHz
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 5
Typical Performance Characteristics (Continued)
Figure 13. Noise Figu re vs. Frequency Figure 14. Noise Figure vs. Source Resistance
Figure 15. Current Gain and Phase An gle vs.
Frequency Figure 16. Power Dissipation vs.
Ambient Temperature
Figure 17. Turn-On Time vs. Collector Current Figure 18. Rise Time vs. Collector Current
0.1 1 10 100
0
2
4
6
8
10
12
f - FREQUENCY (kHz)
NF - NOISE FIGURE (dB)
V = 5.0V
CE
I = 100 μA, R = 500 Ω
CS
I = 1.0 mA
R = 200Ω
C
S
I = 50 μA
R = 1.0 kΩ
C
S
I = 0.5 mA
R = 200Ω
C
S
kΩ
Ω
0.1 1 10 100
0
2
4
6
8
10
12
R - SOURCE RESISTANCE ( )
NF - NOISE FIGURE (dB)
I = 100 μA
C
I = 1.0 mA
C
S
I = 50 μA
C
I = 5.0 mA
C
θθ - DEGREES
0
40
60
80
100
120
140
160
20
180
1 10 100 1000
0
5
10
15
20
25
30
35
40
45
50
f - FREQUENCY (MHz)
h - CURRENT GAIN (dB)
θ
V = 40V
CE
I = 10 mA
C
hfe
fe
0 25 50 75 100 125 150
0
0.2 5
0.5
0.7 5
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
°
D
SOIC-16
SOT-6
SC70-6
110100
5
10
100
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
B1
C
B2
Ic
10
40V
15V
2.0V
t @V = 0V
CB
d
t @V = 3.0V
CC
r
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - RISE TIME (ns)
I = I =
B1
C
B2
Ic
10
T = 125°C
T = 25°C
J
V = 40V
CC
r
J
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 6
Typical Performance Characteristics (Continued)
Figure 19. Storage Time vs. Collector Current Figure 20. Fall Time vs. Collector Current
Figure 21. Current Gain Figure 22. Outpu t Admi tta nc e
Figure 23. Input Impedance Figure 24. Voltage Feedback Ratio
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - STORAGE TIME (ns)
I = I =
B1
C
B2
Ic
10
S
T = 125°C
T = 25°C
J
J
1 10 100
5
10
100
500
I - COLLECTOR CURRENT (mA)
t - FALL TIME (ns)
I = I =
B1
C
B2
Ic
10
V = 40V
CC
f
T = 125°C
T = 25°C
J
J
0.1 1 10
10
100
500
I - COLLECTOR CURRENT (mA)
h - CURRENT GAIN
V = 10 V
CE
C
fe
f = 1.0 kHz
T = 25 C
A o
0.1 1 10
1
10
100
I - COLLECTOR CURRENT (mA)
h - OUTPUT ADMITTANCE ( mhos)
V = 10 V
CE
C
oe
f = 1. 0 kH z
T = 25 C
A o
μ
0.1 1 10
0.1
1
10
100
I - COLLECTOR CURRENT (mA)
h - INPUT IMPEDANCE (k )
V = 10 V
CE
C
ie
f = 1.0 kHz
T = 25 C
A o
Ω
0. 1 1 1 0
1
2
3
4
5
7
10
I - COLLECTOR CURRENT (mA)
h - VOLTAGE FEEDBACK RATIO (x10 )
V = 10 V
CE
C
re
f = 1 .0 kHz
T = 25 C
A o
_4
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 7
Physical Dimensions
Figure 25. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MAA06A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MAA06A.pdf.
SCALE: 60X
B
1.90
2.00
±0.20
0.50 MIN
1.00
0.80
1.10
0.80
0.10 C
0.25
0.10
0.46
0.26
0.20
GAGE
PLANE (R0.10)
30°
SEATING
PLANE
C0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO EIAJ
SC-88, 1996.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH.
D) DRAWING FILENAME: MKT-MAA06AREV6
2.10±0.30
0.10 A B
0.65
1.30
(0.25) 0.30
0.15
1
1.25
±0.10
3
1.30
0.40 MIN
SEE DETAIL A
LAND PATTERN RECOMMENDATION
6
A
4
C
0.65
L
SYMM
PIN ONE
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 8
Physical Dimensions (Continued)
Figure 26. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA06A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA06A.pdf.
FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 9
Physical Dimensions (Continued)
Figure 27. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/M1/M16A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-M16A.pdf.
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative
/
In Design
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
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changes at any time without notice to improve the design.
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Not In Production
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The datasheet is for reference information only.
Rev. I66
®
Mouser Electronics
Authorized Distributor
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MMPQ3904