FFB3904 / FMB3904 / MMPQ3904 — NPN Multi-Chip General Purpose Amplifier
© 1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
FFB3904 / FMB3904 / MMPQ3904 Rev. 1.1.1 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
3. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Typ. Max. Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 60 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 V
IBL Base Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA
ICEX Collector Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA
On Characteristics(3)
hFE DC Current Gain
FFB3904, FMB3904 IC = 0.1 mA, VCE = 1.0 V 40
MMPQ3904 30
FFB3904, FMB3904 IC = 1.0 mA, VCE = 1.0 V 70
MMPQ3904 50
FFB3904, FMB3904 IC = 10 mA, VCE = 1.0 V 100 300
MMPQ3904 75
All Devices IC = 50 mA, VCE = 1.0 V 60
All Devices IC = 100 mA, VCE = 1.0 V 30
VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.2 V
IC = 50 mA, IB = 5.0 mA 0.3
VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA 0.65 0.85 V
IC = 50 mA, IB = 5.0 mA 0.95
Small-Signal Characteristics (MMPQ3904 only)
fTCurrent Gain-Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz 250 MHz
Cob Output Capacitance VCB = 5.0 V, IE = 0,
f = 140 kHz 4.0 pF
Cib Input Capacitance VBE = 0.5 V, IC = 0,
f = 140 kHz 8.0 pF