MRF136Y - Motorola / Freescale Semiconductor

MRF136 MRF136YMOTOROLA RF DEVICE DATA

The RF MOSFET Line

 !

  

   

. . . designed for wideband large–signal amplifier and oscillator applications up

to 400 MHz range, in either single ended or push–pull configuration.

•Guaranteed 28 Volt, 150 MHz Performance

MRF136 MRF136Y

Output Power = 15 Watts Output Power = 30 Watts

Narrowband Gain = 16 dB (Typ) Broadband Gain = 14 dB (Typ)

Efficiency = 60% (Typical) Efficiency = 54% (Typical)

•Small–Signal and Large–Signal

Characterization

•100% Tested For Load

Mismatch At All Phase

Angles With 30:1 VSWR

•Space Saving Package For

Push–Pull Circuit

Applications — MRF136Y

•Excellent Thermal Stability,

Ideally Suited For Class A

Operation

•Facilitates Manual Gain

Control, ALC and

Modulation Techniques

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Rating

Symbol

MRF136 MRF136Y

Unit

Drain–Source Voltage VDSS 65 65 Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ) VDGR 65 65 Vdc

Gate–Source Voltage VGS ±40 Vdc

Drain Current — Continuous ID2.5 5.0 Adc

Total Device Dissipation @ TC = 25°C

Derate above 25°CPD55

0.314 100

0.571 Watts

W/°C

Storage Temperature Range Tstg –65 to +150 °C

Operating Junction Temperature TJ200 °C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Characteristic

Symbol

MRF136 MRF136Y

Unit

Thermal Resistance, Junction to Case RθJC 3.2 1.75 °C/W

Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Order this document

by MRF136/D



SEMICONDUCTOR TECHNICAL DATA





15 W, 30 W, to 400 MHz

N–CHANNEL

MOS BROADBAND

RF POWER FETs

CASE 211–07, STYLE 2

MRF136

CASE 319B–02, STYLE 1

MRF136Y

 Motorola, Inc. 1994

(FLANGE)

MRF136

MRF136Y

REV 6

MRF136 MRF136Y

2MOTOROLA RF DEVICE DATA

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 5.0 mA) V(BR)DSS 65 — — Vdc

Zero–Gate Voltage Drain Current

(VDS = 28 V, VGS = 0) IDSS — — 2.0 mAdc

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0) IGSS — — 1.0 µAdc

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA) VGS(th) 1.0 3.0 6.0 Vdc

Forward Transconductance

(VDS = 10 V, ID = 250 mA) gfs 250 400 — mmhos

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz) Ciss — 24 — pF

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz) Coss — 27 — pF

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz) Crss — 5.5 — pF

FUNCTIONAL CHARACTERISTICS (2)

Noise Figure MRF136

(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz) NF — 1.0 — dB

Common Source Power Gain (Figure 1) MRF136

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA) Gps 13 16 — dB

Common Source Power Gain (Figure 2) MRF136Y

(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA) Gps 12 14 — dB

Drain Efficiency (Figure 1) MRF136

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA) η50 60 — %

Drain Efficiency (Figure 2) MRF136Y

(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA) η50 54 — %

Electrical Ruggedness (Figure 1) MRF136

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,

VSWR 30:1 at all Phase Angles)

ψNo Degradation in Output Power

Electrical Ruggedness (Figure 2) MRF136Y

(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA,

VSWR 30:1 at all Phase Angles)

ψNo Degradation in Output Power

NOTES:

1. For MRF136Y, each side measured separately.

2. For MRF136Y measured in push–pull configuration.

MRF136 MRF136YMOTOROLA RF DEVICE DATA

Figure 1. 150 MHz Test Circuit (MRF136)

Figure 2. 30–150 MHz Test Circuit (MRF136Y)

C1, C2 — Arco 406, 15–115 pF or Equivalent

C3 — Arco 404, 8–60 pF or Equivalent

C4 — 43 pF Mini–Unelco or Equivalent

C5 — 24 pF Mini–Unelco or Equivalent

C6 — 680 pF, 100 Mils Chip

C7 — 0.01 µF Ceramic

C8 — 100 µF, 40 V

C9 — 0.1 µF Ceramic

C10, C11 — 680 pF Feedthru

D1 — 1N5925A Motorola Zener

L1 — 2 Turns, 0.29″ ID, #18 AWG, 0.10″ Long

L2 — 2 Turns, 0.23″ ID, #18 AWG, 0.10″ Long

L3 — 2–1/4 Turns, 0.29″ ID, #18 AWG, 0.125″ Long

RFC1 — 20 Turns, 0.30″ ID, #20 AWG Enamel Closewound

RFC2 — Ferroxcube VK–200 — 19/4B

R1 — 27 Ω, 1 W Thin Film

R2 — 10 kΩ, 1/4 W

R3 — 10 Turns, 10 kΩ

R4 — 1.8 kΩ, 1/2 W

Board Material — 0.062″ G10, 1 oz. Cu Clad, Double Sided

C1 — 5.0 pF

C2, C3, C4, C6, C7, C9, C11 — 0.1 µF Ceramic

C5, C8 — 680 pF Feedthru

C10 — 15 pF

D1 — 1N4740 Motorola Zener

RFC1 — 17 Turns, #24 AWG Wound on R5

RFC2 — Ferroxcube VK–200–19/4B or Equivalent

R1 — 10 kΩ, 1/4 W

R2, R3 — 560 Ω, 1/2 W

R4 — 10 Turns, 10 kΩ

R5 — 56 kΩ, 1 W

R6 — 1.6 kΩ, 1/4 W

T1 — Primary Winding — 3 Turns #28 Enameled Wire.

T1 — Secondary Winding — 2 Turns #28 Enameled Wire.

T1 — Both windings wound through a Fair/Rite Balun 65 core.

T1 — Part #2865002402.

T2 — 1:1 Transformer Wound Bifilar — 2 Turns Twisted Pair

T1 — #24 Enameled Wire through a Indiana General Balun Q1

T1 — core. Part #18006–1–Q1. Primary winding center tapped.

Board Material — 0.062″ G10, 1 oz. Cu Clad, Double Sided

R4 C10

D1 C8 +

RFC1

C1 L1

C4 C3

RF INPUT

RFC2

DUT

–

RF OUTPUT

C11 VDD = +28 V

RF OUTPUT

VDD = +28 V

RFC2 C8

D1 C11

RFC1

R2 C3

C10C9

DUT

DT2T1 S

BIAS

ADJUST

BIAS

ADJUST

RF INPUT

MRF136 MRF136Y

4MOTOROLA RF DEVICE DATA

400

Figure 3. Output Power versus Input Power Figure 4. Output Power versus Input Power

Figure 5. Output Power versus Input Power Figure 6. Output Power versus Supply Voltage

Figure 7. Output Power versus Supply Voltage Figure 8. Output Power versus Supply Voltage

2020

00 200 600 800 1000

f = 100 MHz

f = 400 MHz

IDQ = 25 mA

150 MHz 200 MHz f = 100 MHz

VDD = 13.5 V

IDQ = 25 mA

Pin, INPUT POWER (MILLWATTS)

Pout, OUTPUT POWER (WATTS)

00 1 2 3 4

Pin, INPUT POWER (WATTS)

Pout, OUTPUT POWER (WATTS)

00 200 400 600 800 1000

Pin, INPUT POWER (MILLWATTS)

Pout, OUTPUT POWER (WATTS)

200 MHz

150 MHz

012 16 20 24 28

VDD, SUPPLY VOLTAGE (VOLTS)

Pout, OUTPUT POWER (WATTS)

14 18 22 26

400 mW

200 mW

0.7 W

VDD = 28 V

VDD = 13.5 V

IDQ = 25 mA

f = 100 MHz

Pin = 600 mW

12 16 20 24 28

VDD, SUPPLY VOLTAGE (VOLTS)

Pout, OUTPUT POWER (WATTS)

14 18 22 26

600 mW

300 mW

IDQ = 25 mA

f = 150 MHz

Pin = 900 mW

012 16 20 24 28

VDD, SUPPLY VOLTAGE (VOLTS)

Pout, OUTPUT POWER (WATTS)

14 18 22 26

0.4 W

Pin = 1 W

IDQ = 25 mA

f = 200 MHz

VDD = 28 V

IDQ = 25 mA

MRF136 MRF136YMOTOROLA RF DEVICE DATA

VGS, GATE–SOURCE VOLTAGE (VOLTS)

Figure 9. Output Power versus Supply Voltage

MRF136 Figure 10. Output Power versus Gate Voltage

MRF136

Figure 11. Drain Current versus Gate Voltage

(Transfer Characteristics)*

MRF136/MRF136Y

Figure 12. Gate–Source Voltage versus

Case Temperature*

MRF136/MRF136Y

Figure 13. Capacitance versus Drain–Source Voltage*

MRF136/MRF136Y Figure 14. DC Safe Operating Area

MRF136/MRF136Y

*Data shown applies to MRF136 and each half of MRF136Y.

12 16 20 24 28

VDD, SUPPLY VOLTAGE (VOLTS)

Pout, OUTPUT POWER (WATTS)

14 18 22 26

2 W

IDQ = 25 mA

f = 400 MHz Pin = 3 W

1.8

1.6

1.4

1.2

0.8

0.6

0.4

0.2

0 16 20 24 28

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

–25 25 75 125 175

TC, CASE TEMPERATURE (

0 50 100 150

0.94

–7

Pout, OUTPUT POWER (WATTS)

4 8 12

1.04

1.03

1.02

1.01

0.99

0.98

0.97

0.96

0.95

0 4 5 6 7

VDS, GATE–SOURCE VOLTAGE (VOLTS)

1 2 3

100

180

–6 –5 –4 –3 –2 –1 0 1 2 3

1 W

VDS = 28 V ID = 750 mA

25 mA

500 mA

250 mA

1 3020 50 100

VDS, DRAIN–SOURCE VOLTAGE (VOLTS)

2 3 5

0.1 10 70

0.3

0.2

VDS = 10 V

TYPICAL DEVICE

SHOWN, VGS(th) = 3 V

VDD = 28 V

IDQ = 25 mA

Pin = CONSTANT

TYPICAL DEVICE

SHOWN, VGS(th) = 3 V

VGS = 0 V

f = 1 MHz

Coss

Ciss

Crss

MRF136Y

MRF136

TC = 25

400 MHz

400 MHz150 MHz

ID, DRAIN CURRENT (MILLAMPS)

ID, DRAIN CURRENT (AMPS)

C, CAPACITANCE (pF)

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

MRF136 MRF136Y

6MOTOROLA RF DEVICE DATA

Figure 15. Output Power versus Input Power Figure 16. Power Gain versus Frequency

Figure 17. Drain Efficiency versus Frequency Figure 18. Output Power versus Gate Voltage

Figure 19. Output Power versus Input Power Figure 20. Output Power versus Gate Voltage

MRF136Y

TYPICAL PERFORMANCE IN BROADBAND TEST CIRCUIT

(Refer to Figure 2)

TYPICAL 400 MHz PERFORMANCE

0 40 80 120 160

f, FREQUENCY (MHz)

20 60 100 140

100

VDD = 28 V

IDQ = 100 mA

Pin = CONSTANT

TYPICAL DEVICE

SHOWN, VGS(th) = 3 V

VDD = 28 V

IDQ = 100 mA

Pout = 30 W

VDD = 28 V

IDQ = 100 mA

Pout = 30 W

VDD = 28 V

IDQ = 100 mA

VDD = 28 V

IDQ = 100 mA

f = 400 MHz

VDD = 28 V

IDQ = 100 mA

Pin = CONSTANT

TYPICAL DEVICE

SHOWN, VGS(th) = 3 V

0–4 –2 0 2 4

VGS, GATE–SOURCE VOLTAGE (VOLTS)

Pout, OUTPUT POWER (WATTS)

–3 –1 1 3

00 1 2.5 3.5

Pin, INPUT POWER (WATTS)

Pout, OUTPUT POWER (WATTS)

0.5 1.5 2 3

Pout, OUTPUT POWER (WATTS)

00 40 80 120 160

f, FREQUENCY (MHz)

POWER GAIN (dB)

20 60 100 1400.5 2 2.5

Pin, INPUT POWER (WATTS)

1 1.5

0–6 VGS, GATE–SOURCE VOLTAGE (VOLTS)

–2 0 2 6–4 4

Pout, OUTPUT POWER (WATTS)

, EFFICIENCY (%)

f = 150 MHz

30 MHz

f = 150 MHz

f = 400 MHz

MRF136 MRF136YMOTOROLA RF DEVICE DATA

Figure 21. Large–Signal Series Equivalent

Input Impedance, Zin†

MRF136

Figure 22. Large–Signal Series Equivalent

Output Impedance, ZOL*

MRF136

Figure 23. Input and Outut Impedance

MRF136Y

400

200

150

f = 100 MHz

Zin

{

VDD = 28 V, IDQ = 25 mA,

Pout = 15 W

{

Ω

Shunt Resistor Gate–to–Ground

MHz Zin

{

OHMS

100

150

200

400

7.5 – j9.73

4.11 – j7.56

2.66 – j6.39

2.39 – j2.18

400

200

150

f = 100 MHz

ZOL*

VDD = 28 V, IDQ = 25 mA,

Pout = 15 W

ZOL* = Conjugate of the

optimum load impedance into

which the device operates at

a given output power, voltage

and frequency.

MHz ZOL*

OHMS

100

150

200

400

13.7 – j16.8

9.08 – j15.38

4.74 – j8.92

4.28 – j4.17

400

225

150

f = 30 MHz

ZOL*

100

Zin

f = 30 MHz

100

150

225

400

Feedback loops: 560 ohms in series with 0.1

Drain to gate, each side of push–pull FET

ZOL* = Conjugate of the optimum load imped -

ance into which the device operates at a given

output power, voltage and frequency.

VDD = 28 V, IDQ = 100 mA,

Pout = 30 W

MHz Zin

{

Ohms ZOL*

Ohms

100

150

225

400

59.3 – j24

48 – j33.5

20.5 – j34.2

4.77 – j25.4

3 – j9.5

2.34 – j3.31

40.1 – j8.52

37 – j11.9

29 – j16.5

20.6 – j19

13 – j16.7

10.2 – j14.3

Zin & ZOL* are given

from drain–to–drain and

gate–to–gate respectively.

MRF136 MRF136Y

8MOTOROLA RF DEVICE DATA

MRF136

(MHz)

S11 S21 S12 S22

(MHz)

|S11|±φ|S21|±φ|S12|±φ|S22|±φ

2.0 0.988 –11 41.19 173 0.006 67 0.729 –12

5.0 0.970 –27 40.07 164 0.014 62 0.720 –31

10 0.923 –52 35.94 149 0.026 54 0.714 –58

20 0.837 –88 27.23 129 0.040 36 0.690 –96

30 0.784 –111 20.75 117 0.046 27 0.684 –118

40 0.751 –125 16.49 108 0.048 22 0.680 –131

50 0.733 –135 13.41 103 0.050 19 0.679 –139

60 0.720 –142 11.43 99 0.050 16 0.678 –145

70 0.709 –147 9.871 96 0.050 14 0.679 –149

80 0.707 –152 8.663 93 0.051 13 0.683 –153

90 0.706 –155 7.784 91 0.051 13 0.682 –155

100 0.708 –157 7.008 88 0.051 13 0.680 –157

110 0.711 –159 6.435 86 0.051 14 0.681 –158

120 0.714 –161 5.899 85 0.051 15 0.682 –159

130 0.717 –163 5.439 82 0.052 16 0.684 –160

140 0.720 –164 5.068 80 0.052 17 0.684 –161

150 0.723 –165 4.709 80 0.052 18 0.686 –161

160 0.727 –166 4.455 78 0.052 18 0.690 –161

170 0.732 –167 4.200 77 0.052 18 0.694 –162

180 0.735 –168 3.967 75 0.052 19 0.699 –162

190 0.738 –169 3.756 74 0.052 19 0.703 –163

200 0.740 –170 3.545 73 0.052 20 0.706 –163

225 0.746 –171 3.140 69 0.053 22 0.717 –163

250 0.742 –172 2.783 67 0.053 25 0.724 –163

275 0.744 –173 2.540 64 0.054 27 0.724 –163

300 0.751 –174 2.323 60 0.055 29 0.736 –163

325 0.757 –175 2.140 58 0.058 32 0.749 –163

350 0.760 –176 1.963 54 0.059 35 0.758 –163

375 0.762 –177 1.838 52 0.062 38 0.768 –163

400 0.774 –179 1.696 50 0.065 41 0.783 –163

425 0.775 –179 1.590 48 0.068 43 0.793 –163

450 0.781 +179 1.493 46 0.071 46 0.805 –163

475 0.787 +177 1.415 43 0.074 47 0.813 –164

500 0.792 +176 1.332 40 0.079 48 0.825 –164

525 0.797 +175 1.259 38 0.083 50 0.831 –164

550 0.801 +175 1.185 37 0.088 51 0.843 –164

575 0.810 +174 1.145 36 0.094 52 0.855 –164

600 0.816 +173 1.091 34 0.101 52 0.869 –165

625 0.818 +171 1.041 32 0.106 53 0.871 –165

650 0.825 +170 0.994 30 0.112 53 0.884 –165

675 0.834 +169 0.962 29 0.119 53 0.890 –165

700 0.837 +168 0.922 27 0.127 53 0.906 –166

725 0.836 +167 0.879 25 0.133 52 0.909 –167

750 0.841 +166 0.838 25 0.140 53 0.917 –167

775 0.844 +165 0.824 24 0.148 52 0.933 –167

800 0.846 +163 0.785 21 0.154 50 0.941 –168

Table 1. Common Source Scattering Parameters

VDS = 28 V, ID = 0.5 A

MRF136 MRF136YMOTOROLA RF DEVICE DATA

S11

+90

+120

+150

–150

–120

–60

–30

+30

+60

S12

10 25 50 100 150 250 500

+j50

+j100

+j150

+j250

+j500

–j500

–j250

–j150

–j100

–j50

–j25

–j10

+j10

+j25

400 70

S22

150

Figure 24. S11, Input Reflection Coefficient

versus Frequency

VDS = 28 V ID = 0.5 A

Figure 25. S12, Reverse Transmission Coefficient

versus Frequency

VDS = 28 V ID = 0.5 A

Figure 26. S21, Forward Transmission Coefficient

versus Frequency

VDS = 28 V ID = 0.5 A

Figure 27. S22, Output Reflection Coefficient

versus Frequency

VDS = 28 V ID = 0.5 A

10 25 50 100 150 250 500

+j50

+j100

+j150

+j250

+j500

–j500

–j250

–j150

–j100

–j50

–j25

–j10

+j10

+j25

+90

+120

+150

180

–150

–120

–90

–60

–30

+30

+60

f = 800 MHz

842

6400

100

150

–90

0.16 0.12 0.08 0.04

0.06

600

0.020.18

180

0.14 0.10

400

f = 800 MHz

400

150

S21

f = 800 MHz

MRF136 MRF136Y

10 MOTOROLA RF DEVICE DATA

DESIGN CONSIDERATIONS

The MRF136 and MRF136Y are RF power N–Channel

enhancement mode field–effect transistors (FETs) designed

especially for HF and VHF power amplifier applications.

Motorola RF MOS FETs feature planar design for optimum

manufacturability.

Motorola Application Note AN211A, FETs in Theory and

Practice, is suggested reading for those not familiar with the

construction and characteristics of FETs.

The major advantages of RF power FETs include high gain,

low noise, simple bias systems, relative immunity from ther-

mal runaway, and the ability to withstand severely mis-

matched loads without suffering damage. Power output can

be varied over a wide range with a low power dc control signal,

thus facilitating manual gain control, ALC and modulation.

DC BIAS

The MRF136 and MRF136Y are enhancement mode FETs

and, therefore, do not conduct when drain voltage is applied

without gate bias. A positive gate voltage causes drain current

to flow (see Figure 11). RF power FETs require forward bias

for optimum gain and power output. A Class AB condition with

quiescent drain current (IDQ) in the 25–100 mA range is

sufficient for many applications. For special requirements

such as linear amplification, IDQ may have to be adjusted to

optimize the critical parameters.

The MOS gate is a dc open circuit. Since the gate bias circuit

does not have to deliver any current to the FET, a simple

resistive divider arrangement may sometimes suffice for this

function. Special applications may require more elaborate

gate bias systems.

GAIN CONTROL

Power output of the MRF136 and MRF136Y may be

controlled from rated values down to the milliwatt region (>20

dB reduction in power output with constant input power) by

varying the dc gate voltage. This feature, not available in

bipolar RF power devices, facilitates the incorporation of

manual gain control, AGC/ALC and modulation schemes into

system designs. A full range of power output control may

require dc gate voltage excursions into the negative region.

AMPLIFIER DESIGN

Impedance matching networks similar to those used with

bipolar transistors are suitable for MRF136 and MRF136Y.

See Motorola Application Note AN721, Impedance Matching

Networks Applied to RF Power T ransistors. Both small signal

scattering parameters (MRF136 only) and large signal

impedance parameters are provided. Large signal imped-

ances should be used for network designs wherever possible.

While the s parameters will not produce an exact design

solution for high power operation, they do yield a good first

approximation. This is particularly useful at frequencies

outside those presented in the large signal impedance plots.

RF power FETs are triode devices and are therefore not

unilateral. This, coupled with the very high gain, yields a

device capable of self oscillation. Stability may be achieved

using techniques such as drain loading, input shunt resistive

loading, or feedback. S parameter stability analysis can

provide useful information in the selection of loading and/or

feedback to insure stable operation. The MRF136 was

characterized with a 27 ohm input shunt loading resistor, while

the MRF136Y was characterized with a resistive feedback

loop around each of its two active devices.

For further discussion of RF amplifier stability and the use

of two port parameters in RF amplifier design, see Motorola

Application Note AN215A on page 6–204 in the RF Device

Data (DL110 Rev 1).

LOW NOISE OPERATION

Input resistive loading will degrade noise performance, and

noise figure may vary significantly with gate driving imped-

ance. A low loss input matching network with its gate

impedance optimized for lowest noise is recommended.

MRF136 MRF136YMOTOROLA RF DEVICE DATA

PACKAGE DIMENSIONS

CASE 211–07

ISSUE N

MRF136

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.960 0.990 24.39 25.14

B0.370 0.390 9.40 9.90

C0.229 0.281 5.82 7.13

D0.215 0.235 5.47 5.96

E0.085 0.105 2.16 2.66

H0.150 0.108 3.81 4.57

J0.004 0.006 0.11 0.15

K0.395 0.405 10.04 10.28

M40 50 40 50

Q0.113 0.130 2.88 3.30

R0.245 0.255 6.23 6.47

S0.790 0.810 20.07 20.57

U0.720 0.730 18.29 18.54

_ _ _ _

STYLE 2:

PIN 1. SOURCE

2. GATE

3. SOURCE

4. DRAIN

CASE 319B–02

ISSUE C

MRF136Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. GATE (INPUT)

2. GATE (INPUT)

3. DRAIN (OUTPUT)

4. DRAIN (OUTPUT)

SOURCE IS FLANGE

IDENTIFICATION

NOTCH

4 3

1 2

–A–

DF4 PL

Q2 PL

–N–

SEATING

PLANE

–T–

0.15 (0.006) N M

0.38 (0.015) N M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.965 0.985 24.51 25.02

B0.355 0.375 9.02 9.52

C0.230 0.260 5.84 6.60

D0.055 0.065 1.40 1.65

E0.102 0.114 2.59 2.90

F0.055 0.065 1.40 1.65

H0.160 0.170 4.06 4.31

J0.004 0.006 0.10 0.15

K0.120 0.140 3.05 3.55

L0.725 BSC 18.42 BSC

N0.225 0.241 5.72 6.12

Q0.125 0.135 3.18 3.42

MRF136 MRF136Y

12 MOTOROLA RF DEVICE DATA

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

and specifically disclaims any and all liability , including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “T ypicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England.

JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center , No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF136/D

*MRF136/D*

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