SIEMENS FEATURES * Vorm=400 to 800 V * lams=300 mA dv/dt,,210,000 Vins Electrically Insulated Between Input and Output Circuit Microcomputer CompatibleVery Low Trigger Current Trigger Current: ~ BRT11/12/13 H, <2 mA BRT11/12/13 M, <3 mA Options Available: Option 1-Per VDE 0884 Option 6Leads with 0.4 (10.16 mm) Spacing Option 7-Lead Bends for Surface Mounting DIP-6 Package Underwriters Lab File #52744, Code Letter J Maximum Ratings (T 25C unless otherwise specified) Input Circult Reverse Voltage beeteiteeeene we 6V Continuous Forward Current. . 20mA Surge Forward Current, ts10 ps 15A Maximum Power Dissipation .....0000000000.00... 30 mW Output Circuit Repetitive Peak Off-State Voltage BATI1 wees : lesveeees . 400 V BRT12 . 600 V BRT13 ... 800 V RMS On-State Current .... . 300 mA Single Cycle Surge Current (50 HZ) os 3A Maximum Power Dissipation ...000.0.0.0..0000..... 600 mW AC Switch Insulation Test Voltage Between Input/Output Circuit (Climate per DIN 40 046, Part 2, Nov. 74) ...... 5300 VDC Reference Voltage per VDE 0110b (insulation Group C) oo... SOOVAC 4/600 VDC Creepage Distance {input/output circuit) ............28.2 mm Clearance (input/output circuit)... 7.2mm Creepage Tracking Resistance per DIN IEC 112/VDE 0303, part... 175 Group Illa per DIN VDE 0109. Insulation Resistance Vi9=500 V, Ta=25C 10!2 Q Vio =500 V, Ta=100C ... 10D Humidity Category (DIN 40 040) on F Maximum Power Dissipation ., . 630 mw Operating Temperate Range . -40! C to +100C Storage Temperature Range -40C to +150C BRT11/12/13 SITAC AC SWITCHES OPTOCOUPLER Package Dimensions in Inches (mm)} mh OD Anode CL a Mt 248 (6 30) ly E: 256 (6.50) Cathode [2] 3 [Ss] Nc tal LJ Is ne [2] 4] tz 338 (8.50) 347 (8 TO) | O39 900 (7.62: Phe | ve | | 130 (3 30) 138 (3 50) * e 4 yp ~/ at 08 " eam nfs we ~ - 034 (0.60) Le waa i Pesen boage 100 (2.54) typ DESCRIPTION The BRT 11/12/13 are AC switch optocouplers without zero voltage detectors consisting of two electrically insulated lateral Optocouplers (Optoisolators) power ICs which integrate a thyristor system, a photo detector and noise suppression at the output and an IR GaAs diode at the input. Characteristics (Tj=25C, unless otherwise specified) Symbol Min. Typ. Max. Unit Input Circuit Forward Voltage Ve Reverse Current tq Thermal Resistance) Junction to Ambient Rings Output Circuit On-State Voltage Vy Off-State Current lb Holding Current hy Critical Rate of Rise Off-Stage Voltage dv/dt,, 1000 dv/dt,, 5000 Voltage at Current Commutation dv/dt.rq 10000 dv/dterq 5000 On-State Current di/dt,, Thermal Resistance Junction to Ambient Ria Package Trigger Current ler Type H Type M Input-Output Capacitance Cio 5-49 11 0.6 80 10 750 23 100 500 125 2.0 3.0 Vv pA KW V pA pA Vins Vias Vips Vips Alus KW mA mA pF Condition le=10 mA Va=6 V ;=300 mA T, =100C, Voan Vp=10V Ty=28C, Vp=0 67 Vopna T=80C, Vp=0.67 Vpam Vp=0.67 Vpam. difdta.qgS15 Alms T=25C Ty=80C Vp=10V Vp=10V Vig=0, f=1 MhzTypical trigger delay time tha=t (lvleacucds Vj=200 V, Parameter: T, 51600008 10 5 10! 5 10 Ne yagee Power dissipationfor 40 to 60 Hz line operation P= (1 1 sn) Typical off-state current |,=f(T,), V,=800 V, Parameter: T, SIC o0D a6 ' n* n" 0 20 40 60 & < 100 Pulse trigger current benef (tue), |. Normalized to I,, referring to tig $1 Ms, V,,=220 V, f=40 to 60 Hz typical ve % few 5-50 BRT 11/12/13