Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
ESD Protection Diode
CDZC6.8B
Applications Dimensions（Unit : mm） Land size figure(Unit : mm)
ESD Protection
Features
1)Ultra small mold type.（VMN2）
2)High reliability
3)Ultra low Capacitance
Structure
Construction
Silicon epitaxial planar
Taping specifications（Unit : mm）
Absolute maximum ratings（Ta=25℃）
Symbol Unit
PmW
Tj℃
Tstg ℃
Electical voltage（Ta=25℃）
Symbol Min. Typ. Max. Unit Conditions
VZ6.65 - 6.93 V IZ=5mA
IR- - 0.50 μAVR=3.5V
Ct - 3 - pF VR=0V , f=1MHz
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Parameter Limits
Power dissipation 100
Junction temperature 150
Storage temperature -55 to +150
0.16±0.05
0.37±0.03
0.6±0.05
0.35±0.1
0.9±0.05
1.0±0.05
0.156
ROHM : VMN2
dot (year week factory) + day
VMN2
0.55
0.5
0.45
0.45
0.55
1/2 2011.03 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
CDZC6.8B
Electrical characteristic curves
6.5
6.6
6.7
6.8
6.9
7
AVE:6.752V
Ta=25C
IZ=5mA
n=30pcs
0
1
2
3
4
5
6
7
8
9
10
AVE:0.334nA
Ta=25C
VR=3.5V
n=30pcs
1
10
100
0.1 1 10
10
100
1000
10000
0 0.5 1 1.5 2 2.5 3 3.5
Ta=125C
Ta=75C
Ta=25C
Ta=25C
0.01
0.1
1
10
5 5.5 6 6.5 7 7.5 8
Ta=75C
Ta=25CTa=125C
Ta=25C
1
10
0 0.5 1 1.5 2 2.5 3 3.5
ZENER VOLTAGE : Vz(V)
Vz-Iz CHARACTERISTICS
ZENER CURRENT:Iz(mA )
REVERSE CURRENT:IR(pA)
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
Vz DISPERSION MAP
ZENER VOLTAGE:Vz(V)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
ZENER CURRENT : Iz(mA)
Zz-Iz CHARACTERISTICS
DYNAMIC IMPEDANCE:Zz(Ω)
f=1MHｚ
0
1
2
3
4
5
6
7
8
9
10
AVE:2.87pF
Ta=25C
f=1MHz
VR=0V
n=10pcs
2/2 2011.03 - Rev.A
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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