BS270/NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode field effect transistors are produced using National's very high cell density third generation DMOS technology. These products have been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2A. This product is particularly suited to low voltage, low current applications, such as small servo motor controls, power MOSFET gate drivers, and other switching applications. Y Y Y Y Y Efficient high density cell design approaching (3 million/in2) Voltage controlled small signal switch Rugged High saturation current Low RDS(on) TL/G/11380-1 TL/G/11380 - 2 TO-92 BS270 TO-236AB (SOT-23) NDS7002A TL/G/11380 - 3 Absolute Maximum Ratings Symbol Parameter BS270 NDS7002A Units VDSS Drain-Source Voltage 60 V VDGR Drain-Gate Voltage (RGS s 1 MX) 60 V VGSS Gate-Source Voltage ID Drain CurrentContinuous Pulsed PD Total Power Dissipation Derate above 25 C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purposes, (/16x from Case for 10 Seconds C1995 National Semiconductor Corporation TL/G/11380 g 40 @ TA e 25 C V 400 280 2000 1500 mA 625 300 mW 2.4 mW/ C 5 mA b 65 to a 150 C 300 C RRD-B30M115/Printed in U. S. A. BS270/NDS7002A N-Channel Enhancement Mode Field Effect Transistor July 1992 BS270/NDS7002A Electrical Characteristics (Tc e 25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units 1 mA 500 mA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS e 0V, ID e 10 mA IDSS Zero Gate Voltage Drain Current VDS e 60V, VGS e 0V 60 V Tc e 125 C IGSSF Gate-Body Leakage, Forward VGS e 20V IGSSR Gate-Body Leakage, Reverse VGS e b20V 10 nA b 10 nA ON CHARACTERISTICS (Note 1) VGS(th) Gate Threshold Voltage VDS e VGS, ID e 250 mA RDS(on) Static Drain-Source On-Resistance VGS e 10V, ID e 500 mA 1 Tc e 125 C VGS e 4.5V, ID e 75 mA VDS(on) Drain-Source On-Voltage ID(on) On-State Drain Current gFS Forward Transconductance 2.1 2.5 V 1.2 2 X 2 3.5 X 1.8 3 X V VGS e 10V, ID e 500 mA 0.6 1 VGS e 4.5V, ID e 75 mA 0.14 0.225 V VGS e 10V, VDS t 2 VDS(on) 2000 2700 mA VGS e 4.5V, VDS t2VDS(on) 400 600 mA VDS t 2VDS(on), ID e 200 mA 100 320 mS DYNAMIC CHARACTERISTICS Ciss Input Capacitance 20 50 pF Ciss Output Capacitance VDS e 25V, VGS e 0V, f e 1.0 MHz 11 25 pF Crss Reverse Transfer Capacitance 4 5 pF SWITCHING CHARACTERISTICS (Note 1) ton Turn-On Time toff Turn-Off Time VDD e 30V, ID e 500 mA, VGS e 10V, RG e 25X 10 ns 10 ns THERMAL CHARACTERISTICS RiJA Thermal Resistance, Junction to Ambient BS270 200 C/W NDS7002A 417 C/W BS270 400 mA NDS7002A 280 mA BS270 2000 mA NDS7002A 1500 mA 1.2 V BODY-DRAIN DIODE RATINGS IS Maximum Continous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS e 0V, IS e 400 mA (Note 1) Note 1: Pulse Test: Pulse Width s 300 ms, Duty Cycle s 2.0%. 2 0.88 Typical Electrical Characteristics BS270/NDS7002A TL/G/11380 - 6 TL/G/11380 - 7 FIGURE 1. On-Region Characteristics FIGURE 2. RDS(on) Variation with Drain Current and Gate Voltage TL/G/11380 - 9 TL/G/11380 - 8 FIGURE 4. Breakdown Voltage Variation with Temperature FIGURE 3. Transfer Characteristics TL/G/11380 - 10 TL/G/11380 - 11 FIGURE 5. Gate Threshold Variation with Temperature FIGURE 6. On-Resistance Variation with Temperature 3 Typical Electrical Characteristics (Continued) BS270/NDS7002A (Continued) TL/G/11380 - 12 TL/G/11380 - 13 FIGURE 8. Body Diode Forward Voltage Variation with Current and Temperature FIGURE 7. On-Resistance vs Drain Current TL/G/11380 - 14 FIGURE 9. Capacitance vs Drain-Source Voltage TL/G/11380 - 15 TL/G/11380 - 16 FIGURE 10. BS270 Safe Operating Area FIGURE 11. NDS7002A Safe Operating Area 4 Typical Electrical Characteristics (Continued) BS270/NDS7002A (Continued) TL/G/11380 - 17 FIGURE 12. TO-92 Transient Thermal Response TL/G/11380 - 18 FIGURE 13. SOT-23 Transient Thermal Response Physical Dimensions inches (millimeters) TL/G/11380 - 4 Note: All transistors are load formed to this configuration prior to bulk shipment. TO-92 TO-18 Lead Form STD* 5 BS270/NDS7002A N-Channel Enhancement Mode Field Effect Transistor Physical Dimensions inches (millimeters) (Continued) TL/G/11380 - 5 Note 1: Meets all JEDEC dimensional requirements for TO-236AB. Note 2: Controlling dimension: millimeters. Note 3: Available also in TO-236AA. Contact your local National Semiconductor represenative for delivery and ordering information. Note 4: Tape and reel is the standard packing metthod for TO-236. TO236AB (SOT-23) (Notes 3,4) LIFE SUPPORT POLICY NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. National Semiconductor Corporation 1111 West Bardin Road Arlington, TX 76017 Tel: 1(800) 272-9959 Fax: 1(800) 737-7018 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Europe Fax: (a49) 0-180-530 85 86 Email: cnjwge @ tevm2.nsc.com Deutsch Tel: (a49) 0-180-530 85 85 English Tel: (a49) 0-180-532 78 32 Fran3ais Tel: (a49) 0-180-532 93 58 Italiano Tel: (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd. 13th Floor, Straight Block, Ocean Centre, 5 Canton Rd. Tsimshatsui, Kowloon Hong Kong Tel: (852) 2737-1600 Fax: (852) 2736-9960 National Semiconductor Japan Ltd. Tel: 81-043-299-2309 Fax: 81-043-299-2408 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.