338 - DG306A ODPST CMOS 74+0%9+ 24 9 F (FAT) (938) Siliconix Atv F > RHEE MRM (V+ =15V, V- =15V, GND=0, T,=25T) we x i outer ORR y We 20m verve |e our Vanatoc |7.10mA, Viy=3.5V or 11V 7 15) 15 6 5 ww I m Viy=3.5V oF 11V [f= 10mA, Vp=10V 30 | 50 30 | 50 oon HL H+>- 4 | acon > oF T,=25C Is=10mA, Vp=~10V 30 | 50 30 | 50 switen == "BON Ty 3.5Vor LIV |= 10mA, V>=10V 75 73 | ourrur tose eno | Stemeeen |7,=10mA, V>=-10V 5 B eed ho ee = Ss oy Vs=14V, Vo=14V o1 | 1 01] 5 Isorr |v. =3.5Vor IV |V>=i4V, Vg=14v| 1 | 01 ~5 |-01 T.=25C Vp=HAV, Ve=14V o1 | 1 oi) 5 | PSFIBLERGILADA, FSU #2 OLBHESS GER) J Iowore: Vs=14V, Vp=14v| 1 | -00 ~3 ) 04 rsy Vs=14V, Vp=14V 100 100 +18v -18V Iscorm Viy=3.5V or 11V [Vp=14V, Ve=14V| 100 100 nA fe i, Tom, | BAwMEREL [Vor14V, Vox 14V 100 100 : Vs=14V, Vp=14| 100 100 MIN ONT Vin=35Vorl1V | Vp=Vs=14V o1 | 2 o1 | 8 S ving O4 T,=25C Vo=Vs=-u4v | 2 | 01 -5 | 01 nA cmos Locic Tovow Vw=3.5V orl1V | Vp=Vs=14V 100 100 mparseeer ermine | Vp=Ve=14V_|200 = 200 na 174 CO4001 Vin=5V 1 |0.001 1 |-0.001 csv = tia nase Viv= 15V 0.001] 1 0.001] 1 | pA Tan Vin=0V -1 |-0.001 1 |-0.001 cmos Loaic I Vin=5V es Gain SELECT errr BemER Vin=15V 1 BA WOH= 10. ye cose a J Tn Viv=0V -1 bon . ito | 250 110 te MEIC LS ETT 7 ns Q ICL= IP, Roey=00, Vory=0V 3 3 mv S vox 1 Ean | Csr) be snaps [_s=0v 14 4 | LJ Cover | y/=3.5V or LIV Vor i Ht & 4 Cosiow Vp= Vs=0V 40 40 pF g 20K Siliconix | DG306A Cw |fe1MHe Vin=0V 6 6 L Harris | HI306 : Vin= SV. 7 OIR | Viy=0V, R,=1ka 62 62 2B C.T cy | Vs=1Vime =500kKHz 74 74 rly a1svean) 0.001 | 10 0.001 | 10 I 10 |0.001 =10 |~0.001 =oviean) 0.001 | 10 0.001 | 10 | * L =10 |0.001) 10 |0.001 il =a 1