SFH601 SERIES TRIOS* PHOTOTRANSISTOR OPTOCOUPLER FEATURES * High Current Transfer Ratios SFH601-1, 40 to 80% SFH601-2, 63 to 125% SFH601-3 ,100 to 200% SFH601-4, 160 to 320% * Isolation Test Voltage (1 Sec.), 5300 VACRMS * VCEsat 0.25 (0.4) V, IF=10 mA, IC=2.5 mA * Built to conform to VDE Requirements * Highest Quality Premium Device * Long Term Stability * Storage Temperature, -55 to +150C * Underwriters Lab File #E52744 * CECC Approved V * VDE 0884 Available with Option 1 D E DESCRIPTION The SFH601 is an optocoupler with a Gallium Arsenide LED emitter which is optically coupled with a silicon planar phototransistor detector. The component is packeged in a plastic plug-in case 20 AB DIN 41866. Dimensions in inches (mm) Pin One ID 3 2 1 Anode 1 .248 (6.30) .256 (6.50) 6 Base Cathode 2 4 5 5 Collector NC 3 6 4 Emitter .335 (8.50) .343 (8.70) .300 (7.62) typ. .039 (1.00) Min. 4 typ. .130 (3.30) .150 (3.81) 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. .110 (2.79) .150 (3.81) .010 (.25) .014 (.35) .300 (7.62) .347 (8.82) Characteristics (TA=25C) The coupler transmits signals between two electrically isolated circuits. Symbol Unit Condition Maximum Ratings Emitter Emitter Reverse Voltage................................................. 6 V DC Forward Current...................................... 60 mA Surge Forward Current (tp=10 s).................. 2.5 A Total Power Dissipation.............................. 100 mW Forward Voltage VF 1.25 (1.65) V IF=60 mA Breakdown Voltage VBR 6 V IR=10 A Reverse Current IR 0.01 (10) A VR=6 V Capacitance CO 25 pF VF=0 V, f=1 MHz Thermal Resistance RTHJamb 750 C/W Capacitance Collector-Emitter Collector-Base Emitter-Base CCE CCB CEB 6.8 8.5 11 Thermal Resistance RTHJamb 500 C/W Saturation Voltage, Collector-Emitter VCEsat 0.25 (0.4) V IF=10 mA, IC=2.5 mA Coupling Capacitance CIO 0.6 pF VI-O=0, f=1 MHz Detector Collector-Emitter Voltage .............................. 100 V Emitter-Base Voltage ......................................... 7 V Collector Current........................................... 50 mA Collector Current (t=1 ms) .......................... 100 mA Power Dissipation ...................................... 150 mW Package Isolation Test Voltage (between emitter and detector referred to climate DIN 40046, part 2, Nov. 74) (t=1 sec.)..............5300 VACRMS Creepage ........................................................... 7 mm Clearance .......................................................... 7 mm Isolation Thickness between Emitter and Detector....................................................... 0.4 mm Comparative Tracking Index per DIN IEC 112/VDE0303, part 1........................175 Isolation Resistance VIO=500 V, TA=25C ................................... 1012 VIO=500 V, TA=100C................................. 1011 Storage Temperature Range........ -55C to +150C Ambient Temperature Range....... -55C to +100C Junction Temperature ....................................100C Soldering Temperature (max. 10 s, dip soldering: distance to seating plane 1.5 mm) ..........260C Detector pF f=1 MHz VCE=5 V VCB=5 V VEB=5 V Package *TRIOS--TRansparent IOn Shield 5-1 This document was created with FrameMaker 4.0.4 Current Transfer Ratio and Collector-Emitter Leakage Current by dash number IC/IF at VCE=5 V (IF=10 mA) IC/IF at VCE=5 V (IF=1 mA) Collector-Emitter Leakage Current (VCE=10 V) (ICEO) -0 -1 -2 -3 Unit 40-80 63125 100200 160320 % 30 (>13) 45 (>22) 70 (>34) 90 (>56) % 2 ( 50) 2 ( 50) 5 ( 100) 5 ( 100) nA Figure 3. Current transfer ratio versus diode current (TA=-25C, VCE=5 V) IC/IF=f (IF) Figure 1. Linear operation (without saturation) RL=75 IF IC VCC=5 V Figure 4. Current transfer ratio versus diode current (TA=0C, VCE=5 V) IC/IF=f (IF) 47 IF=10 mA, VCC=5 V, TA=25 C, Typical Load Resistance RL 75 Turn-On Time tON 3.0 s Rise Time tR 2.0 s Turn-Off Time tOFF 2.3 s Fall Time tf 2.0 s Cut-off Frequency FCO 250 kHz Figure 2. Switching operation (with saturation) IF 1 K VCC=5 V Figure 5. Current transfer ratio versus diode current (TA=25C, VCE=5 V)IC/IF=f (IF) 47 Typical -1 (IF=20 mA) -2 and -3 (IF=10 mA) -4 (IF=5 mA) Turn-On Time tON 3.0 4.2 6.0 s Rise Time tR 2.0 3.0 4.6 s Turn-Off Time tOFF 18 23 25 s Fall Time tF 11 14 15 s VCE- 0.25 (0.4) V SAT SFH601 5-2 Figure 6. Current transfer ratio versus diode current (TA=50C) VCE=5 V, IC/IF=f (IF) Figure 9. Transistor characteristics (HFE =550) IC=f(VCE) (TA=25C, IF=0) Figure 12. Collector emitter off-state current ICEO=f (V, T) (TA=25C, IF=0) Figure 7. Current transfer ratio versus diode current (TA=75C, VCE=5 V) IC/IF=f (IF) Figure 10. Output characteristics IC=f(VCE)(TA=25C) Figure 13. Saturation voltage versus collector current and modulation depthSFH601-1 VCEsat=f (IC) (TA=25C) Figure 8. Current transfer ratio versus temperature (IF=10 mA, VCE=5 V) IC/IF=f(T) Figure 11. Forward voltage VF=f (IF) Figure 14. Saturation voltage versus collector current and modulation depthSFH601-2 VCEsat=f (IC) (TA=25C) SFH601 5-3 Figure 15. Saturation voltage versus collector current and modulation depth SFH601-3 VCEsat=f (IC) (TA=25C) Figure 18. Permissible power dissipation for transistor and diode Ptot=f (TA) Figure 16. Saturation voltage versus collector current and modulation depth SFH601-4 VCEsat=f (IC) (TA=25C) Figure 19. Permissible forward current diode Ptot=f (TA) Figure 20. Transistor capacitance C=f(VO) (TA=25C, f=1 MHz) Figure 17. Permissible pulse load D=parameter, TA=25C, IF=f (tp) SFH601 5-4