VND5E025MKTR-E - STMicroelectronics

October 2009 Doc ID 16471 Rev 1 1/35

VND5E025MK-E

Double-channel high-side driver with analog current sense

for automotive applications

Features

■General

– Inrush current active management by

power limitation

– Very low standby current

– 3.0V CMOS compatible inputs

– Optimized electromagnetic emissions

– Very low electromagnetic susceptibility

– In compliance with the 2002/95/EC

european directive

– Very low current sense leakage

■Diagnostic functions

– Proportional load current sense

– High current sense precision for wide

currents range

– Current sense disable

– Overload and short to ground (power

limitation) indication

– Thermal shutdown indication

■Protections

– Undervoltage shutdown

– Overvoltage clamp

– Load current limitation

– Self limiting of fast thermal transients

– Protection against loss of ground and loss

of VCC

– Overtemperature shutdown with auto

restart (thermal shutdown)

– Reverse battery protected (see Figure 29:

Application schematic(1))

– Electrostatic discharge protection

Applications

■All types of resistive, inductive and capacitive

loads

■Suitable as LED driver

Description

The VND5E025MK-E is a double-channel high-

side drivers manufactured in the ST proprietary

VIPower™ M0-5 technology and housed in the

tiny PowerSSO-24 package.

The VND5E025MK-E is designed to drive 12V

automotive grounded loads delivering protection,

diagnostics and easy 3V and 5V CMOS

compatible interface with any microcontroller.

The device integrates advanced protective

functions such as load current limitation, inrush

and overload active management by power

limitation, overtemperature shut-off with

auto-restart and overvoltage active clamp.

A dedicated analog current sense pin is

associated with every output channel in order to

provide Enhanced diagnostic functions including

fast detection of overload and short-circuit to

ground through power limitation indication and

overtemperature indication.

The current sensing and diagnostic feedback of

the whole device can be disabled by pulling the

CS_DIS pin high to allow sharing of the external

sense resistor with other similar devices.

Max transient supply voltage VCC 41 V

Operating voltage range VCC 4.5 to 28 V

Max on-state resistance (per ch.) RON 25 mΩ

Current limitation (typ) ILIMH 60 A

Off-state supply current IS2µA

(1)

1. Typical value with all loads connected.

PowerSSO-24

www.st.com

Contents VND5E025MK-E

2/35 Doc ID 16471 Rev 1

Contents

1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Electrical specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

2.3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

2.4 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

2.5 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

3 Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

3.1 GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 23

3.1.1 Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 23

3.1.2 Solution 2: diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . . 24

3.2 Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.3 MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

3.4 Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

3.5 Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 26

4 Package and thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

4.1 PowerSSO-24 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

5 Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

5.1 ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

5.2 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

5.3 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

6 Order codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

VND5E025MK-E List of tables

Doc ID 16471 Rev 1 3/35

List of tables

Table 1. Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Table 2. Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6

Table 3. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Table 4. Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Table 5. Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 6. Switching (VCC = 13V; Tj = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Table 7. Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Table 8. Protections and diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Table 9. Current sense (8V < VCC < 18V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Table 10. Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Table 11. Electrical transient requirements (part 1/3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 12. Electrical transient requirements (part 2/3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 13. Electrical transient requirements (part 3/3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

Table 14. Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Table 15. PowerSSO-24 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Table 16. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Table 17. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

List of figures VND5E025MK-E

4/35 Doc ID 16471 Rev 1

List of figures

Figure 1. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Figure 2. Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 3. Current and voltage conventions(1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Figure 4. Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 5. Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 6. Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Figure 7. Delay response time between rising edge of output current and rising edge of current sense

(CS enabled). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Figure 8. IOUT/ISENSE vs IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 9. Maximum current sense ratio drift vs load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Figure 10. Normal operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 11. Overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Figure 12. Intermittent overload . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 13. TJ evolution in overload or short to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 14. Off-state output current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 15. High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 16. Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 17. Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 18. Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 19. Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 20. On-state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 21. On-state resistance vs VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 22. Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 23. ILIMH vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 24. Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 25. Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

Figure 26. CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 27. CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 28. CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 29. Application schematic(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

Figure 30. Current sense and diagnostic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

Figure 31. Maximum turn-off current versus inductance (for each channel)(1) . . . . . . . . . . . . . . . . . . 26

Figure 32. PowerSSO-24 PC board(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

Figure 33. Rthj-amb vs PCB copper area in open box free air condition (one channel ON) . . . . . . . . 27

Figure 34. PowerSSO-24 thermal impedance junction to ambient single pulse (one channel ON). . . 28

Figure 35. Thermal fitting model of a double-channel HSD in PowerSSO-24(1) . . . . . . . . . . . . . . . . . 28

Figure 36. PowerSSO-24 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 37. PowerSSO-24 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Figure 38. PowerSSO-24 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

VND5E025MK-E Block diagram and pin description

Doc ID 16471 Rev 1 5/35

1 Block diagram and pin description

Figure 1. Block diagram

Table 1. Pin functions

Name Function

VCC Battery connection.

OUTPUT1,2 Power output.

GND Ground connection. Must be reverse battery protected by an external

diode / resistor network.

INPUT1,2

Voltage controlled input pin with hysteresis, CMOS compatible. Controls

output switch state.

CURRENT SENSE1,2

Analog current sense pin; delivers a current proportional to the load

current.

CS_DIS Active high CMOS compatible pin to disable the current sense pin.

VCC

CH 1

Control & Diagnostic 1

LOGIC

DRIVER

VON

Limitation

Current

Limitation

Power

Clamp

Over

temp.

Undervoltage

VSENSEH

Current

Sense

CH 2

OVERLOAD PROTECTION

(ACTIVE POWER LIMITATION)

IN1

IN2

CS1

CS2

CS_

DIS

GND

OUT2

OUT1

Signal Clamp

CONTROL & DIAGNOSTIC

Channels 2

Block diagram and pin description VND5E025MK-E

6/35 Doc ID 16471 Rev 1

Figure 2. Configuration diagram (top view)

Table 2. Suggested connections for unused and not connected pins

Connection / pin Current sense N.C. Output Input CS_DIS

Floating Not allowed X X X X

To ground Through 1kΩ

resistor XThrough 22kΩ

resistor

Through 10kΩ

resistor

Through 10kΩ

resistor

N.C.

INPUT1

GND

VCC

N.C.

INPUT2

CS_DIS.

VCC

CURRENT SENSE1

N.C.

CURRENT SENSE2

OUTPUT2

OUTPUT1

TAB = V

VND5E025MK-E Electrical specification

Doc ID 16471 Rev 1 7/35

2 Electrical specification

Figure 3. Current and voltage conventions(1)

1. VFn = VOUTn - VCC during reverse battery condition.

2.1 Absolute maximum ratings

Stressing the device above the rating listed in the “Absolute maximum ratings” table may

cause permanent damage to the device. These are stress ratings only and operation of the

device at these or any other conditions above those indicated in the Operating sections of

this specification is not implied. Exposure to the conditions in table below for extended

periods may affect device reliability. Refer also to the STMicroelectronics SURE Program

and other relevant quality document.

GND

SENSE2

OUTPUT1

OUT1

CURRENT

SENSE1

INPUT1

IN1

IN2

OUT2

GND

CS_DIS

CSD

INPUT2

IN2

IN1

SENSE1

OUTPUT2

OUT2

CURRENT

SENSE2

SENSE1

OUT1

Table 3. Absolute maximum ratings

Symbol Parameter Value Unit

VCC DC supply voltage 41 V

-VCC Reverse DC supply voltage 0.3

-IGND DC reverse ground pin current 200 mA

IOUT DC output current Internally limited A

- IOUT Reverse DC output current 24

IIN DC input current -1 to 10 mAICSD DC current sense disable input current

-ICSENSE DC reverse CS pin current 200

VCSENSE Current sense maximum voltage VCC - 41 to +VCC V

EMAX

Maximum switching energy (single pulse)

(L = 0.8 mH; RL=0Ω; Vbat =13.5V; T

jstart = 150°C;

IOUT = IlimL(Typ.))

140 mJ

Electrical specification VND5E025MK-E

8/35 Doc ID 16471 Rev 1

2.2 Thermal data

VESD

Electrostatic discharge

(Human Body Model: R = 1.5kΩ; C = 100pF)

– INPUT

– CURRENT SENSE

–CS_DIS

–OUTPUT

–V

4000

2000

4000

5000

VESD Charge device model (CDM-AEC-Q100-011) 750 V

TjJunction operating temperature - 40 to 150 °C

Tstg Storage temperature - 55 to 150

Table 3. Absolute maximum ratings (continued)

Symbol Parameter Value Unit

Table 4. Thermal data

Symbol Parameter Max. value Unit

Rthj-case Thermal resistance junction-case (with one channel ON) 1.35 °C/W

Rthj-amb Thermal resistance junction-ambient See Figure 33

VND5E025MK-E Electrical specification

Doc ID 16471 Rev 1 9/35

2.3 Electrical characteristics

Values specified in this section are for 8V<VCC<28V; -40°C<Tj<150°C, unless otherwise

stated.

Table 5. Power section

Symbol Parameter Test conditions Min. Typ. Max. Unit

VCC

Operating supply

voltage 4.5 13 28

VVUSD Undervoltage shutdown 3.5 4.5

VUSDhyst

Undervoltage shutdown

hysteresis 0.5

RON On-state resistance(1)

1. For each channel.

IOUT =3A; T

j= 25°C 25

mΩIOUT =3A; T

j= 150°C 50

IOUT =3A; V

CC =5V; T

j= 25°C 35

Vclamp Clamp voltage IS= 20 mA 41 46 52 V

ISSupply current

Off-state; VCC =13V; T

j=25°C;

VIN =V

OUT =V

SENSE =V

CSD =0V 2(2)

2. PowerMOS leakage included.

5(2) µA

On-state; VCC =13V; V

IN =5V;

IOUT =0A 36mA

IL(off1)

Off-state output

current(1)

VIN =V

OUT =0V; V

CC =13V;

Tj= 25°C 00.01 3

µA

VIN =V

OUT =0V; V

CC =13V;

Tj= 125°C 05

Output - VCC diode

voltage(1) -IOUT =4 A; T

j=150°C 0.7 V

Table 6. Switching (VCC =13V; T

j= 25°C)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time RL=4.3 Ω

(see Figure 5)

20 µs

td(off) Turn-off delay time 40

(dVOUT/dt)on Turn-on voltage slope

RL=4.3 Ω

See

Figure 24 V/µs

(dVOUT/dt)off Turn-off voltage slope See

Figure 25

WON

Switching energy losses

during tWON RL=4.3 Ω

(see Figure 5)

0.6

WOFF

Switching energy losses

during tWOFF

0.35

Electrical specification VND5E025MK-E

10/35 Doc ID 16471 Rev 1

Table 7. Logic inputs

Symbol Parameter Test conditions Min. Typ. Max. Unit

VIL Input low level voltage 0.9 V

IIL Low level input current VIN =0.9V 1 µA

VIH Input high level voltage 2.1 V

IIH High level input current VIN =2.1V 10 µA

VI(hyst) Input hysteresis voltage 0.25

VVICL Input clamp voltage IIN =1mA 5.5 7

IIN = -1mA -0.7

VCSDL CS_DIS low level voltage 0.9

ICSDL Low level CS_DIS current VCSD =0.9V 1 µA

VCSDH CS_DIS high level voltage 2.1 V

ICSDH High level CS_DIS current VCSD =2.1V 10 µA

VCSD(hyst) CS_DIS hysteresis voltage 0.25

VCSCL CS_DIS clamp voltage ICSD =1mA 5.5 7

ICSD = -1mA -0.7

Table 8. Protections and diagnostics (1)

1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related

diagnostic signals must be used together with a proper software strategy. If the device is subjected to

abnormal conditions, this software must limit the duration and number of activation cycles.

Symbol Parameter Test conditions Min. Typ. Max. Unit

ILIMH DC short circuit current VCC = 13V 43 60 85

5V < VCC < 28V

ILIML

Short circuit current

during thermal cycling

VCC = 13V;

TR<T

j<T

TSD

TTSD Shutdown temperature 150 175 200

°C

TRReset temperature TRS +1 T

RS +5

TRS Thermal reset of STATUS 135

THYST

Thermal hysteresis

(TTSD-TR)7

VDEMAG

Turn-Off output voltage

clamp

IOUT=2A; V

IN =0;

L=6 mH VCC -41 V

CC -46 V

CC -52 V

VON

Output voltage drop

limitation

IOUT =0.1A;

Tj= -40°C to +150°C

(see Figure 6)

25 mV

VND5E025MK-E Electrical specification

Doc ID 16471 Rev 1 11/35

Table 9. Current sense (8V < VCC < 18V)

Symbol Parameter Test conditions Min. Typ. Max. Unit

KLED IOUT/ISENSE

IOUT = 0.05A; VSENSE =0.5V; V

CSD =0V;

Tj= -40°C to 150°C 1240 3350 4960

K0IOUT/ISENSE

IOUT =0.5A; V

SENSE =0.5V; V

CSD =0V;

Tj= -40°C to 150°C 1860 3150 4600

K1IOUT/ISENSE

IOUT =2 A; V

SENSE =4 V;

VCSD =0V;

Tj= -40°C to 150°C

Tj= 25°C to 150°C

2100

2250

3100

4400

3850

dK1/K1(1) Current sense

ratio drift

IOUT =2 A; V

SENSE =4 V;

VCSD =0V;

Tj= -40°C to 150°C

-13 13 %

K2IOUT/ISENSE

IOUT =3 A; V

SENSE =4V;

VCSD =0V;

Tj= -40°C to 150°C

Tj= 25°C to150°C

2200

2450

3000

4100

3550

dK2/K2(1) Current sense

ratio drift

IOUT =3 A; V

SENSE =4V; V

CSD =0V;

Tj= -40°C to 150°C -12 12 %

K3IOUT/ISENSE

IOUT =10 A; V

SENSE =4V;

VCSD =0V;

Tj= -40°C to 150°C

Tj= 25°C to 150°C

2550

2650

2850

3280

3180

dK3/K3(1) Current sense

ratio drift

IOUT =10 A; V

SENSE =4V; V

CSD =0V;

Tj= -40°C to 150°C -6 +6 %

ISENSE0

Analog sense

leakage current

IOUT =0A; V

SENSE =0V;

VCSD =5V; V

IN =0V; T

j= -40°C to 150°C

VCSD =0V; V

IN =5V; T

j= -40°C to 150°C

IOUT =2A; V

SENSE =0V;

VCSD =5V; V

IN =5V; T

j= -40°C to 150°C

µA

IOL

Open-load on-

state current

detection

threshold

VIN = 5V, 8V<VCC<18V

ISENSE= 5 µA 530mA

VSENSE

Max analog

sense output

voltage

IOUT =3 A; V

CSD =0V 5

VSENSEH

Analog sense

output voltage in

fault condition(2)

VCC = 13V; RSENSE =3.9kΩ8

ISENSEH

Analog sense

output current in

fault condition(2)

VCC = 13V; VSENSE =5V 9 mA

Electrical specification VND5E025MK-E

12/35 Doc ID 16471 Rev 1

tDSENSE1H

Delay response

time from falling

edge of CS_DIS

VSENSE <4V, 0.5<I

OUT <10A

ISENSE = 90% of ISENSEMAX

(see Figure 4)

30 100

µs

tDSENSE1L

Delay response

time from rising

edge of CS_DIS

VSENSE <4V, 0.5<I

OUT <10A

ISENSE = 10% of ISENSEMAX

(see Figure 4)

520

tDSENSE2H

Delay response

time from rising

edge of INPUT

VSENSE <4V, 0.5<I

OUT <10A

ISENSE = 90% of ISENSEMAX

(see Figure 4)

80 300

ΔtDSENSE2H

Delay response

time between

rising edge of

output current

and rising edge

of current sense

VSENSE <4V,

ISENSE = 90% of ISENSEMAX,

IOUT = 90% of IOUTMAX, IOUTMAX =3A

(see Figure 7)

110

tDSENSE2L

Delay response

time from falling

edge of INPUT

VSENSE <4V, 0.5<I

OUT <10A

ISENSE = 10% of ISENSEMAX

(see Figure 4)

70 250

1. Parameter guaranteed by design; it is not tested.

2. Fault condition includes: power limitation and overtemperature.

Table 9. Current sense (8V < VCC < 18V) (continued)

Symbol Parameter Test conditions Min. Typ. Max. Unit

VND5E025MK-E Electrical specification

Doc ID 16471 Rev 1 13/35

Figure 4. Current sense delay characteristics

Figure 5. Switching characteristics

Figure 6. Output voltage drop limitation

SENSE CURRENT

INPUT

LOAD CURRENT

CS_DIS

tDSENSE2H tDSENSE2L

tDSENSE1L tDSENSE1H

OUT

/dt

(on)

80%

10% t

OUT

/dt

(off)

d(off)

d(on)

INPUT

90%

Won

Woff

OUT

-V

OUT

=150

=25

=-40

on(T)

Electrical specification VND5E025MK-E

14/35 Doc ID 16471 Rev 1

Figure 7. Delay response time between rising edge of output current and rising

edge of current sense (CS enabled)

OUT

SENSE

OUTMAX

SENSEMAX

90% I

SENSEMAX

90% I

OUTMAX

DSENSE2H

VND5E025MK-E Electrical specification

Doc ID 16471 Rev 1 15/35

Figure 8. IOUT/ISENSE vs IOUT

Figure 9. Maximum current sense ratio drift vs load current

Note: Parameter guaranteed by design; it is not tested.

1200

1700

2200

2700

3200

3700

4200

4700

2345678910

OUT

(A)

out

/ I

sense

max Tj = -40 °C to 150 °C

max Tj = 25 °C to 150 °C

min Tj = 25 °C to 150 °C

min Tj = -40 °C to 150 °C

typical value

-20

-15

-10

-5

2345678910

IOUT (A)

dk/k(%)

Electrical specification VND5E025MK-E

16/35 Doc ID 16471 Rev 1

Table 10. Truth table

Conditions Input Output Sense (VCSD=0V)(1)

1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents

and external circuit.

Normal operation L

Nominal

Overtemperature L

VSENSEH

Undervoltage L

Overload

(no power limitation)

Cycling

(power limitation)

Nominal

VSENSEH

Short circuit to GND

(Power limitation)

VSENSEH

Negative output voltage

clamp LL0

VND5E025MK-E Electrical specification

Doc ID 16471 Rev 1 17/35

Table 11. Electrical transient requirements (part 1/3)

ISO 7637-2:

2004(E) Test

pulse

Test levels (1)

1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b.

Number of

pulses or

test times

Burst cycle / pulse

repetition time Delays and

Impedance

III IV Min. Max.

1 -75V -100V 5000 pulses 0.5s 5s 2 ms, 10Ω

2a +37V +50V 5000 pulses 0.2s 5s 50µs, 2Ω

3a -100V -150V 1h 90ms 100ms 0.1µs, 50Ω

3b +75V +100V 1h 90ms 100ms 0.1µs, 50Ω

4 -6V -7V 1 pulse 100ms, 0.01Ω

5b(2)

2. Valid in case of external load dump clamp: 40V maximum referred to ground.

+65V +87V 1 pulse 400ms, 2Ω

Table 12. Electrical transient requirements (part 2/3)

ISO 7637-2:

2004E

Test pulse

Test level results

III VI

1C C

2a C C

3a C C

3b C C

4C C

5b(1)

1. Valid in case of external load dump clamp: 40V maximum referred to ground.

Table 13. Electrical transient requirements (part 3/3)

Class Contents

C All functions of the device performed as designed after exposure to disturbance.

EOne or more functions of the device did not perform as designed after exposure to

disturbance and cannot be returned to proper operation without replacing the device.

Electrical specification VND5E025MK-E

18/35 Doc ID 16471 Rev 1

2.4 Waveforms

Figure 10. Normal operation

Figure 11. Overload or short to GND

IOUT

VSENSE

VCS_DIS

INPUT

Nominal load Nominal load

Normal operation

Power Limitation

ILimH >

ILimL >

IOUT

VSENSE

VCS_DIS

INPUT

Thermal cycling

Overload or Short to GND

VND5E025MK-E Electrical specification

Doc ID 16471 Rev 1 19/35

Figure 12. Intermittent overload

Figure 13. TJ evolution in overload or short to GND

IOUT

VSENSE

VCS_DIS

INPUT

ILimH >Nominal load

Intermittent Overload

ILimL >

Overload

VSENSEH>

TTSD

TJ evolution in

Overload or Short to GND

ILimH >

< ILimL

TJ_START

THYST

Power Limitation

Self-limitation of fast thermal transients

INPUT

IOUT

Electrical specification VND5E025MK-E

20/35 Doc ID 16471 Rev 1

2.5 Electrical characteristics curves

Figure 14. Off-state output current Figure 15. High level input current

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

100

200

300

400

500

600

700

800

900

1000

Iloff (nA)

Off State

Vcc=13V

Vin=Vout=0V

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0,5

1,5

2,5

3,5

4,5

Iih (µA)

Vin = 2.1V

VCC = 8 V

Figure 16. Input clamp voltage Figure 17. Input high level

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

5,2

5,4

5,6

5,8

6,2

6,4

6,6

6,8

Vicl (V)

lin=1mA

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0,5

1,5

2,5

3,5

Vih (V)

Figure 18. Input low level Figure 19. Input hysteresis voltage

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0,2

0,4

0,6

0,8

1,2

1,4

1,6

1,8

Vil (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0,1

0,2

0,3

0,4

0,5

0,6

0,7

0,8

0,9

Vihyst (V)

VND5E025MK-E Electrical specification

Doc ID 16471 Rev 1 21/35

Figure 20. On-state resistance vs Tcase Figure 21. On-state resistance vs VCC

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Ron (mOhm)

Iout= 3A

Vcc=13V

0 5 10 15 20 25 30 35 40

Vcc (V)

Ron (mOhm)

Tc=-40°C

Tc=25°C

Tc=125°C

Tc=150°C

Figure 22. Undervoltage shutdown Figure 23. ILIMH vs Tcase

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Vusd (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Ilimh (A)

Vcc=13V

Figure 24. Turn-on voltage slope Figure 25. Turn-off voltage slope

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

100

200

300

400

500

600

700

(dVout/dt )On (V/ms)

Vcc=13V

RI=4.3 Ohm

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

100

200

300

400

500

600

(dVout/dt )Off (V/ms)

Vcc=13V

RI= 4.3 Ohm

Electrical specification VND5E025MK-E

22/35 Doc ID 16471 Rev 1

Figure 26. CS_DIS high level voltage Figure 27. CS_DIS low level voltage

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0,5

1,5

2,5

3,5

Vcsdh (V)

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

0,5

1,5

2,5

Vcsdl (V)

Figure 28. CS_DIS clamp voltage

-50 -25 0 25 50 75 100 125 150 175

Tc (°C)

Vcsdcl(V)

Icsd = 1 mA

VND5E025MK-E Application information

Doc ID 16471 Rev 1 23/35

3 Application information

Figure 29. Application schematic(1)

1. Channel 2 has the same internal circuit as channel 1.

3.1 GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against

reverse battery.

3.1.1 Solution 1: resistor in the ground line (RGND only)

This can be used with any type of load.

The following is an indication on how to dimension the RGND resistor.

1. RGND ≤ 600mV / (IS(on)max)

2. RGND ≥ (−VCC) / (-IGND)

where -IGND is the DC reverse ground pin current and can be found in the absolute

maximum rating section of the device datasheet.

Power dissipation in RGND (when VCC<0: during reverse battery situations) is:

PD= (-VCC)2/RGND

This resistor can be shared amongst several different HSDs. Please note that the value of

this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the

maximum On-state currents of the different devices.

Please note that if the microprocessor ground is not shared by the device ground then the

RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output

values. This shift varies depending on how many devices are On in the case of several high

side drivers sharing the same RGND.

GND

OUTPUT

GND

+5V

GND

CS_DIS

INPUT

prot

CURRENT SENSE

SENSE

prot

EXT

Application information VND5E025MK-E

24/35 Doc ID 16471 Rev 1

If the calculated power dissipation leads to a large resistor or several devices have to share

the same resistor then ST suggests to utilize Solution 2 (see below).

3.1.2 Solution 2: diode (DGND) in the ground line

A resistor (RGND=1kΩ) should be inserted in parallel to DGND if the device drives an

inductive load.

This small signal diode can be safely shared amongst several different HSDs. Also in this

case, the presence of the ground network produces a shift (≈600mV) in the input threshold

and in the status output values if the microprocessor ground is not common to the device

ground. This shift not varies if more than one HSD shares the same diode/resistor network.

3.2 Load dump protection

Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the

VCC max DC rating. The same applies if the device is subject to transients on the VCC line

that are greater than the ones shown in the ISO 7637-2: 2004(E) table.

3.3 MCU I/Os protection

If a ground protection network is used and negative transient are present on the VCC line,

the control pins is pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent

the MCU I/Os pins to latch-up.

The value of these resistors is a compromise between the leakage current of MCU and the

current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of MCU

I/Os:

-VCCpeak/Ilatchup ≤ Rprot ≤ (VOHμC-VIH-VGND) / IIHmax

Calculation example:

For VCCpeak = - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V

5kΩ ≤ Rprot ≤ 180kΩ

Recommended values: Rprot =10kΩ, CEXT=10nF.

VND5E025MK-E Application information

Doc ID 16471 Rev 1 25/35

3.4 Current sense and diagnostic

The current sense pin performs a double function (see Figure 30: Current sense and

diagnostic):

●Current mirror of the load current in normal operation, delivering a current

proportional to the load one according to a know ratio KX.

The current ISENSE can be easily converted to a voltage VSENSE by means of an

external resistor RSENSE. Linearity between IOUT and VSENSE is ensured up to 5V

minimum (see parameter VSENSE in Table 9: Current sense (8V < VCC < 18V)). The

current sense accuracy depends on the output current (refer to current sense electrical

characteristics Table 9: Current sense (8V < VCC < 18V)).

●Diagnostic flag in fault conditions, delivering a fixed voltage VSENSEH up to a

maximum current ISENSEH in case of the following fault conditions (refer to Tr u t h t a b l e ):

– Power limitation activation

–Overtemperature

A logic level high on CS_DIS pin sets at the same time all the current sense pins of the

device in a high impedance state, thus disabling the current monitoring and diagnostic

detection. This feature allows multiplexing of the microcontroller analog inputs by sharing of

sense resistance and ADC line among different devices.

Figure 30. Current sense and diagnostic

Main MOSn

41V

OUTn

RSENSE

RPROT

To uC ADC

Pwr_Lim

VSENSE

Overtemperature

CURRENT

SENSEn

IOUT/KX

ISENSEH

VBAT

VSENSEH

Load

VCC

GND

CS_DIS

Application information VND5E025MK-E

26/35 Doc ID 16471 Rev 1

3.5 Maximum demagnetization energy (VCC =13.5V)

Figure 31. Maximum turn-off current versus inductance (for each channel)(1)

1. Values are generated with RL=0 Ω.

In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed

the temperature specified above for curves A and B.

100

0,1 1 10 100L (mH)

I (A)

Demagnetization Demagnetization Demagnetization

VIN, IL

jstart

= 125°C repetitive pulse

jstart

= 150°C single pulse

B: T

jstart

= 100°C repetitive pulse

VND5E025MK-E Package and thermal data

Doc ID 16471 Rev 1 27/35

4 Package and thermal data

4.1 PowerSSO-24 thermal data

Figure 32. PowerSSO-24 PC board(1)

1. Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4

area = 77mm x 86mm, PCB thickness = 1.6mm, Cu thickness = 70µm (front and back side), Copper areas:

from minimum pad layout to 8cm2).

Figure 33. Rthj-amb vs PCB copper area in open box free air condition (one channel

ON)

0246810

RTHj_amb(°C/W)

PCB Cu heatsink area (cm^2)

Package and thermal data VND5E025MK-E

28/35 Doc ID 16471 Rev 1

Figure 34. PowerSSO-24 thermal impedance junction to ambient single pulse (one

channel ON)

Equation 1: pulse calculation formula

where δ = tP/T

Figure 35. Thermal fitting model of a double-channel HSD in PowerSSO-24(1)

1. The fitting model is a simplified thermal tool and is valid for transient evolutions where the embedded

protections (power limitation or thermal cycling during thermal shutdown) are not triggered.

0.1

100

1000

0.0001 0.001 0.01 0.1 1 10 100 1000

Time (s)

ZTH (°C/W)

Footprint

8 cm2

2 cm2

ZTHδRTH δZTHtp 1δ–()+⋅=

VND5E025MK-E Package and thermal data

Doc ID 16471 Rev 1 29/35

Table 14. Thermal parameters

Area/Island (cm2) Footprint 2 8

R1 (°C/W) 0.28

R2 (°C/W) 0.9

R3 (°C/W) 6

R4 (°C/W) 7.7

R5 (°C/W) 9 9 8

R6 (°C/W) 28 17 10

R7 (°C/W) 0.28

R8 (°C/W) 0.9

C1 (W.s/°C) 0.001

C2 (W.s/°C) 0.003

C3 (W.s/°C) 0.025

C4 (W.s/°C) 0.75

C5 (W.s/°C) 1 4 9

C6 (W.s/°C) 2.2 5 17

C7 (W.s/°C) 0.001

C8 (W.s/°C) 0.003

Package and packing information VND5E025MK-E

30/35 Doc ID 16471 Rev 1

5 Package and packing information

5.1 ECOPACK® packages

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

5.2 Package mechanical data

Figure 36. PowerSSO-24 package dimensions

VND5E025MK-E Package and packing information

Doc ID 16471 Rev 1 31/35

Table 15. PowerSSO-24 mechanical data

Symbol

Millimeters

Min. Typ. Max.

A 2.15 2.47

A2 2.15 2.40

a1 0 0.075

b 0.33 0.51

c 0.23 0.32

D 10.10 10.50

E7.4 7.6

e0.8

e3 8.8

G0.1

G1 0.06

H 10.1 10.5

h0.4

k5°

L 0.55 0.85

N10°

X4.1 4.7

Y6.5 7.1

Package and packing information VND5E025MK-E

32/35 Doc ID 16471 Rev 1

5.3 Packing information

Figure 37. PowerSSO-24 tube shipment (no suffix)

Figure 38. PowerSSO-24 tape and reel shipment (suffix “TR”)

All dimensions are in mm.

Base Qty 49

Bulk Qty 1225

Tube length (±0.5) 532

A3.5

B13.8

C (±0.1) 0.6

Base Qty 1000

Bulk Qty 1000

A (max) 330

B (min) 1.5

C (±0.2) 13

F20.2

G (+2 / -0) 24.4

N (min) 100

T (max) 30.4

REEL DIMENSIONS

TAPE DIMENSIONS

According to Electronic Industries Association

(EIA) Standard 481 rev. A, Feb. 1986

All dimensions are in mm.

Tape width W 24

Tape Hole Spacing P0 (±0.1) 4

Component Spacing P 12

Hole Diameter D (±0.05) 1.55

Hole Diameter D1 (min) 1.5

Hole Position F (±0.1) 11.5

Compartment Depth K (max) 2.85

Hole Spacing P1 (±0.1) 2

Top

cover

tape

End

Start

No componentsNo components Components

500mm min 500mm min

Empty components pockets

sealed with cover tape.

User direction of feed

VND5E025MK-E Order codes

Doc ID 16471 Rev 1 33/35

6 Order codes

Table 16. Device summary

Package

Order codes

Tube Tape and reel

PowerSSO-24 VND5E025MK-E VND5E025MKTR-E

Revision history VND5E025MK-E

34/35 Doc ID 16471 Rev 1

7 Revision history

Table 17. Document revision history

Date Revision Changes

07-Oct-2009 1 Initial release

VND5E025MK-E

Doc ID 16471 Rev 1 35/35

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