SILICON POINT CONTACT MIXER DIODES AS! Point Contact Mixer Diodes are They feature high burnout resistance, low designed for applications from UHF through _ noise figure and are hermetically sealed. 26 GHz. They are available in DO-7 DO-22, DO-23 and DO-37 package styles which make them suitable for use in Coaxial, Waveguide and Stripline applications. These diodes are available as matched pairs and are supplied in either forward pairs (M) or forward/reverse pairs (MR). The matching criteria for these mixer diodes is: 1. Conversion LossAL, = 0.30B maximum 2. |, ImpedanceAZ,- = 25 OHMS maximum The overall noise figure is expressed by the following relationship: NF, = L, (NR, + NF, 1) i NF, = overall receiver noise figure -10 08 0-608 PRECISION ATTENUATOR These mixer diodes are categorized by noise figure at the designated test frequencies from UHF to 26GHz. BAND FREQUENCY (GHz) UHF Up to 1 L 1 to2 S 2to4 C 4ta8 X 8to 12.4 Ku 12.4 to 18.0 K 18.0 to 26.5 NOISE FIGURE TEST SCHEMATIC LOCAL OSCILLATOR 9.378 GHz POWER METER HP432A CHOKE & DC RETURN DUT i NR, = output noise temperature ratio of the mixer diode NF, = noise figure of the .F amplifier INQ | = pote (1.50B) L, = conversion loss of the mixer diode PH] (7) (7) sw. AA DETECTOR OVI NOISE VSWR, Zp. lp NOISE FIGURE METER HP 8970A SOURCE . MEASUREMENT HP3468 01-18 GHz NOISE SOURCE DRIVE } ee en aNOISE FIGURE (a8) 5 NOISE FIGURE VS FREQUENCY 125 70 6.75 6.5 6.0 5.75 5.5 a0 NOISE FIGURE VS LO POWER 78 46 NOISE FIGURE (aB) 6.8 6.6 TYPICAL PERFORMANCE | IF IMPEDANCE, Z,(OHMS) IF = 30 MHz NFp= 1.5 0B R, = 22 OHMS Pio= ImW a FF | 5 7 g i FREQUENCY (GHe2} 4 42 VSWR (RATIO) 20 \ \ \ Ne -4 -2 LO POWER LEVEL (dBm) 10 IF IMPEDANCE VS LO POWER = 3 s Ss 375 350 DN > 328 aN 300 : -0 -0 6 4 2 60 2 4 6 LO POWER LEVEL (dBm} 1 VSWR VS LOCAL OSCILLATOR POWER 18 \ Fig = 9.375 GHz \ Ay = 22 OHMS THIN 14 \ 12 10 Ol 01 10 10.8. LOCAL OSCILLATOR POWER (mW)POINT CONTACT MIXER DIODES L, S, -BAND TYPE NUMBER NOISE AEQUENCY POLARITY MATCHED PAIRS NOISE NOISE BAND TWO FORWARD | ee eee | RATIO FIGURE FORWARD REVERSE REVERSIBLE POLARITY MAX N, dB DIODES POLARITY MAX. DIODES L IN25 IN25R IN25M IN25MR 20 12.6 Ll IN25A IN25AR IN25AM IN25AMR 20 10.3 l IN25B IN25BR IN25BM IN25BMR 15 83 = = S IN21C INZICR INZICM INZICMR 15 83 = = s 1N4294 IN4294R 1NA294M IN4294MR fz = S IN4I6C INAI6CM INAIGCMR 16 83 a S 1NB3I INB31M 15 83 = S IN3655 INS655M 15 83 OS $ 1N210 INZIDR IN21DM IN21DMR 13 73 I wee 5 IN416D INAIGDM IN4IGDMR 13 73 J S INDIE INZIER INZIEM INZIEMR 70 a $+ ss S IN4I6E INAIGEM IN4IBEMR 70 s IN2IWE INZIWEM INZIWEMR 7.0 S INB3IA INB3IAM 7.0 s INSB5EA INS6554M | IN3655AMR 15 70 S INZIF INZIFR IN2IFM INZIFMR 60 s INAIBE IN4I6FM INAIGEMA 6.0 s IN3655B IN3655BM | IN3655BMR 15 60 ae S INB3IB INB3IBM 65 = : = S INBSIC INB3ICM 6.0 _ = S IN21G IN2IGR IN21GM INZIGMR 55 a * . = s IN416C IN4I6GM INAIBGMR 5.5 i = $ INZIWG INZIWGM IN21WGMR 5.5 _ = s IN2IH INZIHR IN2THM INZTHMR 5.0 ma = S IN416H IN4I16HM INAIBHMR 5.0 = = C IN150 INT5OR INT50M INISOMR 20 98 ma = C IN160 INT6OR INIGOM INIBOMR 27 114ELECTRICAL CHARACTERISTICS TEST CONDITIONS BURNOUT alas VSWR COMES ON | FREQUENCY POWER BASIC Cee ERGS MAX MAB MHz aN TYPE min | MAX 6.51 100 \ 400 8.0 1000 1.25 N25 00-22 6.5! 100 | 300 65 1000 1.25 INZ5A 00-22 6.5! 100 | 300 5.5 1000 1.25 IN25B 00-22 20 300 | 500 5.5 3060 05 IN2IC 00-22 5.5 3060 0.5 1N4294 00-22 20 300 | 500 5.5 3060 05 IN416C 00-23 20 300 | 500 5.5 3060 0.5 1NG31 00-7 10.0 300 | 500 _ 5.5 3060 05 INB55 00-23 20 325 | 475 15 5.0 3060 05 N21 00-22 20 325 | 475 15 5.0 3060 05 IN4160 00-23 5.0 350 | 450 1.3 _ 3060 05 INZIE 00-22 5.0 350 | 450 13 3060 05 INGIGE 00-23 5.0 350 | 450 1.3 _ 3060 05 INZIWE 00-23 300 | 500 3060 05 1NO31 00-7 10.0 350 | 450 1.3 5.5 3060 05 INSB55A 00-23 5.0 350 | 450 13 _ 3060 05 IN2IF 00-22 5.0 350 | 450 13 _ 3060 0.5 INA16F 00-23 10.0 350 | 450 13 5.5 3060 05 IN3655B 00-23 5.0 300 | 500 _ 3060 05 IN831B 00-7 5.0 300 | 500 _ - 3060 05 INB3IC 00-7 5.0 350 | 450 13 - 3060 05 IN21G 00-22 5.0 350 | 450 13 - 3060 0.5 IN4166 00-23 5.0 350 | 450 13 _ 3060 05 INZIWG 00-23 5.0 350 | 450 13 3060 05 INZTH 00-22 5.0 350 | 450 13 3060 05 IN4IGH 00-23 1.0 200 | 500 15 6.0 6750 1.0 IN150 00-22 1.0 200 | 500 6.5 6750 1.0 INI60 00-22 ||; | UNNI ILE.POINT CONTACT MIXER DIODES X-BAND TYPE NUMBER NOISE FREQUENCY POLARITY MATCHED oa ose NOISE! BAND TWO FORWARD | owe peveRse RATIO FIGURE FORWARD REVERSE REVERSIBLE POLARITY POLARITY MAX. Hid DIODES x INZ3C INZ3CR IN23CM INZ3CMR 20 9.5 x IN415C IN415CM IN415CMR 20 9.5 x 1NB32Z IN632M 20 9.5 x 1N2510 IN2510R 1N2510M IN2510MR 20 9.5 x 1N3745 IN3745M IN3745MR 95 x 1N3746 IN3746M IN3746MR 8.5 x IN149 INI49R INI49M INI49MR 15 8.3 x 1N23D IN230R IN230M IN230MR 17 78 x ~ 1NAI5D IN415DM IN416DMR 1.7 78 x IN23E IN23ER INZ3EM IN23EMR 75 x IN23WE IN23WEM INZ3WEMR ~ 75 x IN415E IN415EM IN415EMR 75 x INB32A - | INB32AM 76 x 1N3747W IN3747WM | INS7A7WMR 75 x INZ3F INZ3FR IN23FM IN23FMR 7.0 x IN23WF INZ3WFM INZ3WFMR 7.0 x IN4I5F IN4I5FM IN4I6FMR - 70 x 1N832B 1N632BM _ 7.0 x IN236 IN236R 1N23GM IN236MR 6.5 x IN23WG IN23WGM IN23WGMR 6.5 x 1N4516 IN4I5GM IN4156MR 6.5 x 1NB32C INB32CM 6.5 x INZ3H IN23HR IN23HM INZ3HMR 6.0 x IN415H IN451HM IN415HMR 6.0ELECTRICAL CHARACTERISTICS TEST CONDITIONS BURNOUT aus VSWR CONMERSION | FREQUENCY PaWER BASIC FINE ERGS MAX Mie 4B MHe qm TYPE MIN | MAX 20 325 | 475 15 60 9375 1.0 nzaC 00-22 20 325 | 475 15 6.0 9376 10 In4I5C 00.23 20 250 | 550 _ 6. 9375 1.0 1ng32 00-7 os 20 300 | 500 ~ 60 9375 1.0 1N2510 00.37 a 20 325 | 475 15 ~ 9975 1.0 IN37A5 00.23 5.0 335 | 465 13 9375 1.0 INgH46 00-23 20 325 | 475 - 5.5 9375 1.0 In149 00.22 20 350 | 450 13 50 9375 1.0 1N230 00.22 = 20 350 | 450 13 50 9376 10 14150 00-23 20 935 | 465 13 ~ 9375 1.0 IN23E 00-22 20 335 | 465 13 9375 1.0 INZ3WE 00-23 20 335 | 465 13 - 9376 1.0 INAIGE 00-23 20 250 | 560 - 9376 1.0 INB32A 00-7 5.0 335 | 465 13 - 9376 1.0 INSTATW 00.23 20 335 | 465 13 - 9975 10 INZ3F 00-22 20 335 | 465 13 - 9375 1.0 IN23WE 00-23 20 935 | 465 13 ~ 9375 1.0 INAS 00-23 20 250 | 560 _ 9375 1.0 1N632B 00.7 20 335 | 465 13 ~ 9375 1.0 1N236 0-22 20 935 | 465 13 9375 1.0 Inz3G 00-23 20 335 | 465 13 - 9375 1.0 1n4 166 00-23 20 250 | 560 - - 9375 1.0 neg2c 00-7 20 335 | 465 13 a 9375 10 INZ3H 00-22 20 335 | 465 13 9375 1.0 1N4 15H 00-23POINT CONTACT MIXER DIODES Ku, K-BAND TYPE NUMBER NOISE sae QUENCY POLARITY MATCHED PAIRS Nose! BAND Two ronwano | ONEFORWARD | Pr FIGURE FORWARD REVERSE REVERSIBLE | POLARITY MAX N, 0B POLARITY tian DIODES DIODES Ku N78 IN7OR IN76M IN7BMA 25 Ku IN7BA IN7BAR IN7BAM IN7GAMR Lb - Ku IN7BB IN76BR IN78BM IN78BMR 13 10.0 Ku 1N3205 IN3205R IN3205M IN3Z05MR 14 9.8 Ku IN7BC IN7BCR IN7BCM IN78CMR _ 95 Ku 1N46039 IN4BO3RS IN4603M IN4603MA _ 95 Ku IN78D IN7BDR IN7B0M IN76DMR _ 88 Ku 1N46048 INAG04R9 INAGO4M IN46D4MR _ 88 Ku IN7BE IN7BER IN7BEM IN7BEMR _ 8.0 Kut IN46059 INAGO5R? INA6O5M IN4GO5MR _ 8.0 ku IN76F IN7BFR IN7FM IN76FMR _ 75 ku IN76G IN7BGR IN78GM IN78GMR 70 K N26 INZ6R IN26M IN26MR 25 13.1 K IN26A IN26AR IN26AM IN26AMR 20 11.3 K IN26B IN26BR IN26BM IN26BMR 15 11.0 K IN26C INZ6CR INZ6CM IN26CMR 15 9.5 162 (25) a4 )i- 10min. 19.4 230 TWO PLACES 3 wa 300 { rh (10.3) r applies only to , coco >I | apalis on tay ag NOTE: _t* (nore 2) ) T 2. Marking to be confined to |g 0.147 T RX 019 this region. MIN. GLASS 019 i 085 021 y t3 a tia B.7 105 TWO PLACES 8.011 10.279 2.67 0.533 0.67) + DO7 2.16 0.483 (es) 0220, 0.1840 +) E< 0.26 (2 5.46 we REF ONLY 0.215 15.46 ~~ re 1.60 0.033 4 0787 (real Togi INNER CONDUCTOR REE ONLYaA en A ELECTRICAL CHARACTERISTICS ~ TEST CONDITIONS 2 PACKAGE BURNOUT odtus yswA CONVERSION | FREQUENCY PaWER BASIC OUTLINE ERGS MAX MAX dB Miz mall TYPE MIN | MAX 1.0 325 | 625 ~ 76 16000 1.0 IN78 00-37 1.0 365 | 565 16 7.0 16000 1.0 IN78A 00-37 1.0 365 | 565 16 65 16000 1.0 1N78B 00-37 1.0 365 | 565 16 6.3 16000 1.0 1N3205 00-37 1.0 400 | 565 15 6.0 16000 1.0 IN78C 00-37 1.0 365 | 565 18 _ 16000 1.0 1N4603 00-37 1.0 400 | 565 15 5.7 16000 1.0 IN78D 00-37 1.0 400 | 565 15 16000 1.0 1N4604 00-37 1.0 400 | 565 15 57 16000 1.0 IN78E 00-37 1.0 400 | 565 15 16000 1.0 1N4605 00-37 1.0 400 | 565 15 57 16000 1.0 IN78F 00-37 1.0 400 | 565 18 16000 1.0 1N78G 00-37 0.3 300 | 600 8.5 23984 1.0 1N26 00-37 0.3 300 | 600 1.6 75 23984 10 IN26A 00-37 0.3 400 | 600 15 75 23984 1.0 IN268 00-37 0.3 400 | 600 16 75 23984 1.0 IN26C 00-37 2.39 (zai) N 0 r 0.094 0.092 _ - 6.35 T Fz T fezl 7 6.10 | 0.240 215 p ( Iq | | | 0.250 , 0.208 (262 5.641 0.222 0.195 A / | 0246 0.292 $742 + = 1 15.46 is ( ra 8.030 0.199 . a1 0.620 01193 9.057 0.180 0.762 (i 05 0.047 (a 0.792 a 4.83 0.508 (Fan 90 (2 19.5 0.766 4.57 0.840 119 0.800 1. Base removable. c{- pp Enclosing prong with { (23) DO23 | Removable Base dimensions same as other prong. DO22 | Fixed Base 1. Test Conditions: NFip= 1.5dB, |= 30 MHz, R, = 100 Ohms. 2. IF impedance is measured by modulating the specified test frequency with a 1000Hz signal, Ry = 22 Ohms, at the specified incident power level, 3. Broadband Device.