RP112x SERIES
Low Noise 150mA LDO REGULATOR
NO.EA-258-131024
1
OUTLINE
The RP112x Series are CMOS-based voltage regulator (LDO) ICs, which have been developed using the
CMOS process technology, with high output voltage accuracy, low-supply current, low On-resistance transistor,
low noise output voltage and high ripple rejection. Each of the ICs is composed of the followings: a voltage
reference unit, an error amplifier, a resistor-net for output voltage setting, a current limit circuit, and a chip enable
circuit.
The RP112x features ultra low noise and its Ripple Rejection is as low as 80dB at f=1kHz, 75dB at f=10kHz
and 65dB at f=100kHz. The Output Noise is also as low as Typ. 10μVrms. It is kept the low level at any Output
Voltage. RP112x is suitable for the power source for the portable music player and RF module that demands for
higher level of noise reduction. SOT-23-5 and SC-88A packages, a 1mm square DFN(PLP)1010-4 package are
available.
FEATURES
• Supply Current ......................................................Typ. 75μA
• Standby Current ....................................................Typ. 0.1μA
• Dropout Voltage ....................................................Typ. 0.20V (IOUT=150mA, VOUT=2.8V)
• Ripple Rejection....................................................Typ. 80dB (f=1kHz)
Typ. 75dB (f=10kHz)
Typ. 65dB (f=100kHz)
• Output Voltage Accuracy.......................................±1.0%
• Output Voltage Temperature Coefficient...............Typ. ±30ppm/°C
• Line Regulation .....................................................Typ. 0.02%/V
• Packages ..............................................................DFN(PLP)1010-4, SC-88A, SOT-23-5
• Input Voltage Range .............................................2.0V to 5.25V
• Output Voltage Range...........................................1.2V to 4.8V (0.1V steps)
(For other voltages, please refer to MARK INFORMATIONS.)
• Short Current Limit................................................Typ. 40mA
• Built-in Foldback Protection Circuit
• Output Noise .........................................................Typ. 10μVrms
• Ceramic capacitors are recommended to be used with this IC .....1.0μF or more
APPLICATIONS
• Power source for portable communication equipment.
• Power source for electrical appliances such as cameras,VCRs and camcorders.
• Power source for battery-powered equipments.
• Power source for electrical home appliances.
• Power source for the portable music player
• Power source for RF module
RP112x
NO.EA-258-131024
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BLOCK DIAGRAMS
RP112xxxxB RP112xxxxD
V
DD
GND
V
OUT
CE
Vref
Current
Limit
Noise
Reduction
V
DD
GND
V
OUT
CE
Vref
Current
Limit
Noise
Reduction
SELECTION GUIDE
The output voltage, auto discharge function, package for the ICs can be selected at the user’s request.
Product Name Package Quantity per Reel Pb Free Halogen Free
RP112Kxx1∗-TR DFN(PLP)1010-4 10,000 pcs Yes Yes
RP112Qxx2∗-TR-FE SC-88A 3,000 pcs Yes Yes
RP112Nxx1∗-TR-FE SOT-23-5 3,000 pcs Yes Yes
xx: Output voltage (VOUT) is selectable from 1.2V to 4.8V in 0.1V steps.
The second decimal point of the voltage is described as below.
1.25V: RP112x12x∗5
1.85V: RP112x18x∗5
2.85V: RP112x28x∗5
∗: Selections of CE pin polarity and Auto-discharge function are as shown below:
(B) CE pin polarity: “H” active, Auto-discharge function: No
(D) CE pin polarity: “H” active, Auto-discharge function: Yes
RP112x
NO.EA-258-131024
3
PIN CONFIGURATIONS
• DFN(PLP)1010-4 • SC-88A • SOT-23-5
Top View
2 1
3 4
Bottom View
12
43
∗
54
13
2
(mark side)
1 2 3
4
5
(mark side)
PIN DESCRIPTIONS
• DFN(PLP)1010-4
Pin No. Symbol Description
1 VOUT Output Pin
2 GND Ground Pin
3 CE Chip Enable Pin ("H" Active)
4 VDD Input Pin
∗) Tab is GND level. (They are connected to the reverse side of this IC.)
The tab is better to be connected to the GND, but leaving it open is also acceptable.
• SC-88A
Pin No Symbol Pin Description
1 VDD Input Pin
2 GND Ground Pin
3 CE Chip Enable Pin ("H" Active)
4 NC No Connection
5 VOUT Output Pin
• SOT-23-5
Pin No Symbol Pin Description
1 VDD Input Pin
2 GND Ground Pin
3 CE Chip Enable Pin ("H" Active)
4 NC No Connection
5 VOUT Output Pin
RP112x
NO.EA-258-131024
4
ABSOLUTE MAXIMUM RATINGS
Symbol Item Rating Unit
VIN Input Voltage 6.0 V
VCE Input Voltage (CE Pin) 6.0 V
VOUT Output Voltage −0.3 to VIN + 0.3 V
IOUT Output Current 180 mA
Power Dissipation (DFN(PLP)1010-4)∗ 400
Power Dissipation (SC-88A)∗ 380
PD
Power Dissipation (SOT-23-5)∗ 420
mW
Topt Operating Temperature Range −40 to 85 °C
Tstg Storage Temperature Range −55 to 125 °C
∗) For Power Dissipation, please refer to PACKAGE INFORMATION.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the
permanent damages and may degrade the life time and safety for both device and system using the device
in the field. The functional operation at or over these absolute maximum ratings is not assured.
RP112x
NO.EA-258-131024
5
ELECTRICAL CHARACTERISTICS
Unless otherwise noted, VIN=5.25V（VOUT ≥ 4.1V）, VIN=Set VOUT+1.0V（1.5V < VOUT < 4.1V),
VIN=2.5V（VOUT ≤ 1.5V), IOUT=1mA, CIN=COUT=1.0μF.
The specifications surrounded by are guaranteed by Design Engineering at - 40°C ≤ Ta ≤85°C.
• RP112xxxxB/D Ta=25°C
Symbol Item Conditions Min. Typ. Max. Unit
VOUT ≥ 2.0V ×0.99 ×1.01 V
Ta=25°C VOUT < 2.0V −20 +20 mV
VOUT ≥ 2.0V
×
0.985
×
1.015
V
VOUT Output Voltage
−
40
°
C
≤
T
a
≤
85
°
C
VOUT < 2.0V −30 +30 mV
IOUT Output Current 150 mA
ΔVOUT/ΔIOUT Load Regulation 1mA ≤ IOUT ≤ 150mA -14 0 14 mV
VDIF Dropout Voltage Please refer to “Dropout Voltage”.
VOUT ≥ 4.1V 80
ISS Supply Current IOUT=0mA VOUT < 4.1V
75
100 μA
Istandby Standby Current VCE=0V 0.1 1.0
μA
Set VOUT+0.3 ≤
VIN ≤ 5.25V VOUT ≥ 4.1V
Set VOUT+0.5V ≤
VIN ≤ 5.0V
1.7V
≤
V
OUT
≤
4.1V
ΔVOUT/ΔVIN Line Regulation
2.2V ≤ V
IN
≤
5.0V
VOUT < 1.7V
0.02 0.10 %/V
f =1kHz 80
f =10kHz 75
RR Ripple Rejection
Ripple 0.2Vp-p,
IOUT=30mA,
VIN=5.25V
(VOUT ≥ 4.1V),
VIN=Set VOUT+1.0V
(VOUT < 4.1V) f =100kHz
65
dB
VIN Input Voltage∗ 2.0 5.25 V
ΔVOUT/ΔTopt Output Voltage
Temperature Coefficient −40°C ≤ Ta ≤ 85°C ±30 ppm
/°C
ISC Short Current Limit VOUT=0V 40 mA
IPD CE Pull-down Current 0.3 0.6 μA
VCEH CE Input Voltage "H" 1.0 V
VCEL CE Input Voltage "L" 0.4 V
en Output Noise BW=10Hz~100kHz,
IOUT=30mA 10
μ
Vrms
RLOW
Auto-discharge Nch Tr.
ON Resistance
(D version)
VIN=4.0V, VCE=0V 60 Ω
All test categories were tested on the products under the pulse load condition (Tj≈Ta=25ºC) except Output
Noise, Ripple Rejection, and Output Voltage Temperature Coefficient.
*1) The maximum input voltage (Electrical Characteristics) is 5.25V. If, for any reason the maximum input voltage
exceeds 5.25V, it has to be no more than 5.5V with 500hrs of the total operating time.
RP112x
NO.EA-258-131024
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The specifications surrounded by are guaranteed by Design Engineering at - 40°C ≤ Ta ≤85°C.
• Dropout Voltage Ta=25°C
Dropout Voltage VDIF (V)
Output Voltage
VOUT (V) Condition Typ. Max.
1.2V ≤ VOUT < 1.3V 0.39 0.80
1.3V ≤ VOUT < 1.4V 0.37 0.70
1.4V ≤ VOUT < 1.5V 0.34 0.60
1.5V ≤ VOUT < 1.7V 0.32 0.50
1.7V ≤ VOUT < 2.0V 0.29 0.41
2.0V ≤ VOUT < 2.5V 0.25 0.36
2.5V ≤ VOUT < 2.8V 0.22 0.31
2.8V ≤ VOUT ≤ 4.8V
IOUT=150mA
0.20 0.28
RECOMMENDED OPERATING CONDITIONS (ELECTRICAL CHARACTERISTICS)
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the
recommended operating conditions, even if when they are used over such conditions by momentary
electronic noise or surge. And the semiconductor devices may receive serious damage when they continue
to operate over the recommended operating conditions.
RP112x
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TYPICAL APPLICATIONS
C1 RP112x
Series
V
DD
V
OUT
CE GND
C2
V
OUT
External Parts Example:
C1, C2: Ceramic Capacitor 1.0µF, Murata, GRM155B31A105KE15
TECHNICAL NOTES
Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a 1.0μF or more capacitor C2.
In case of using a tantalum capacitor, the output may be unstable due to inappropriate ESR. Therefore, the full
range of operating conditions for the capacitor in the application should be considered.
PCB Layout
The high impedances of VDD and GND could be a reason for the noise pickup and unstable operation.
Therefore, it is imperative that the impedances of VDD and GND be the lowest possible. Also, place a 1.0µF or
more capacitor (C1) between VDD pin and GND pin as close as possible to each other.
As for C2 output capacitor that is used for phase compensation, place it between VOUT pin and GND as close
as possible to each other (Refer to TYPICAL APPLICATIONS).
RP112x
NO.EA-258-131024
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PACKAGE INFORMATION
• Power Dissipation (DFN(PLP)1010-4)
Power Dissipation (PD) depends on conditions of mounting on board. This specification is based on the
measurement at the conditions below:
Measurement Conditions
Standard Test land Pattern
Environment Mounting on Board (Wind velocity=0m/s)
Board Material Glass cloth epoxy plastic (Double sided)
Board Dimensions 40mm x 40mm x 1.6mm
Copper Ratio Top side: Approx. 50%, Back side: Approx. 50%
Through-holes φ 0.54mm x 24pcs
Measurement Result: (Ta=25°C)
Standard Test Land Pattern
Power Dissipation 400mW (Tjmax=125°C)
500mW (Tjmax=150°C)
θja=(125-25°C)/0.4W=250 °C/W
Thermal Resistance θjc=67 °C/W
0
100
200
300
400
500
600
0 25 50 75 100 125 150
Ambient Temperature (Cº)
Power Dissipation PD
(
mW
)
85
500
400
Power Dissipation
Meas ur ement Board Patt er n
IC Mount Area (Unit: mm)
40
40
The above graph shows that the power dissipation of the package under the conditions of
Tjmax=125°C and Tjmax=150°C. The use under the diagonal line in the graph might have an affect
on the ICs’ lifetime. Please use the ICs within the limited operating time and estimated years as
described below.
Operating Time Estimated Years (4hrs/day)
13,000 hours 9 years
RP112x
NO.EA-258-131024
9
• Package Dimensions (DFN(PLP)1010-4)
• Mark Specification (DFN(PLP)1010-4)
cd: Product Code … Refer to “RP112K Series Mark Specification Table” .
ef: Lot Number … Alphanumeric Serial Number
1.00
1.00
A B
0.05
X4
INDEX
S 0.05 S
0.6MAX.
0.05MIN.
※
34
12
0.25±0.05
0.32±0.05
0.48
±0.05
0.65
3-C0.18
0.07±0.05
0.25±0.05
0.05 M S AB
0.48
±0.05
45°
0.25±0.05
(Unit : mm)
Bottom View
※) The tab on the reverse side of the IC is in GND
level. It should be connected to GND pin
(recommended) or should be left open.
①②
③④
RP112x
NO.EA-258-131024
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• RP112K Series Mark Specification Table (DFN(PLP)1010-4)
RP112Kxx1B RP112Kxx1D
Product Name cd VSET Product Name cd VSET
RP112K121B 1A 1.2V RP112K121D 3A 1.2V
RP112K131B 1C 1.3V RP112K131D 3C 1.3V
RP112K141B 1D 1.4V RP112K141D 3D 1.4V
RP112K151B 1E 1.5V RP112K151D 3E 1.5V
RP112K161B 1F 1.6V RP112K161D 3F 1.6V
RP112K171B 1G 1.7V RP112K171D 3G 1.7V
RP112K181B 1H 1.8V RP112K181D 3H 1.8V
RP112K191B 1K 1.9V RP112K191D 3K 1.9V
RP112K201B 1L 2.0V RP112K201D 3L 2.0V
RP112K211B 1M 2.1V RP112K211D 3M 2.1V
RP112K221B 1N 2.2V RP112K221D 3N 2.2V
RP112K231B 1P 2.3V
RP112K231D 3P 2.3V
RP112K241B 1Q 2.4V RP112K241D 3Q 2.4V
RP112K251B 1R 2.5V RP112K251D 3R 2.5V
RP112K261B 1S 2.6V RP112K261D 3S 2.6V
RP112K271B 1T 2.7V RP112K271D 3T 2.7V
RP112K281B 1U 2.8V RP112K281D 3U 2.8V
RP112K291B 1W 2.9V RP112K291D 3W 2.9V
RP112K301B 1X 3.0V RP112K301D 3X 3.0V
RP112K311B 1Y 3.1V RP112K311D 3Y 3.1V
RP112K321B 1Z 3.2V RP112K321D 3Z 3.2V
RP112K331B 2A 3.3V RP112K331D 4A 3.3V
RP112K341B 2B 3.4V RP112K341D 4B 3.4V
RP112K351B 2C 3.5V RP112K351D 4C 3.5V
RP112K361B 2D 3.6V RP112K361D 4D 3.6V
RP112K371B 2E 3.7V RP112K371D 4E 3.7V
RP112K381B 2F 3.8V RP112K381D 4F 3.8V
RP112K391B 2G 3.9V RP112K391D 4G 3.9V
RP112K401B 2H 4.0V RP112K401D 4H 4.0V
RP112K411B 2J 4.1V RP112K411D 4J 4.1V
RP112K421B 2K 4.2V RP112K421D 4K 4.2V
RP112K431B 2L 4.3V RP112K431D 4L 4.3V
RP112K441B 2M 4.4V RP112K441D 4M 4.4V
RP112K451B 2N 4.5V RP112K451D 4N 4.5V
RP112K461B 2P 4.6V RP112K461D 4P 4.6V
RP112K471B 2Q 4.7V RP112K471D 4Q 4.7V
RP112K481B 2R 4.8V RP112K481D 4R 4.8V
RP112K121B5 1B 1.25V RP112K121D5 3B 1.25V
RP112K181B5 1J 1.85V RP112K181D5 3J 1.85V
RP112K281B5 1V 2.85V RP112K281D5 3V 2.85V
RP112x
NO.EA-258-131024
11
• Power Dissipation (SC-88A)
Power Dissipation (PD) depends on conditions of mounting on board. This specification is based on the
measurement at the conditions below:
Measurement Conditions:
Standard Test Land Pattern
Environment Mounting on Board (Wind velocity=0m/s)
Board Material Glass cloth epoxy plastic (Double Layers)
Board Dimensions 40mm × 40mm × 1.6mm
Copper Ratio Top side: Approx. 50%, Back side: Approx. 50%
Through-hole φ 0.5mm x 44pcs
Measurement Result: (Ta=25°C)
Standard Test Land Pattern Free Air
Power Dissipation 380mW (Tjmax=125°C)
475mW (Tjmax=150°C) 150mW
θja=(125-25°C)/0.38W=263°C/W θja=(125-25°C)/0.15W=667°C/W
Thermal Resistance θjc=75°C/W -
0
100
200
300
400
500
600
0 25 50 75 100 125 150
Ambient Temperature (ºC)
Power Dissi
p
ation PD
(
mW
)
150
380
475
85
Free Air
Standard Test Land Pattern
Power Dissipation
Measurement Board Pattern
IC Mount Area (Unit: mm)
40
40
The above graph shows that the power dissipation of the package under the conditions of
Tjmax=125°C and Tjmax=150°C. The use under the diagonal line in the graph might have an affect
on the ICs’ lifetime. Please use the ICs within the limited operating time and estimated years as
described below.
Operating Time Estimated Years (4hrs/day)
13,000 hours 9 years
RP112x
NO.EA-258-131024
12
• Package Dimensions (SC-88A)
• Mark Specification (SC-88A)
cdef: Product Code …Refer to “RP112Q Series Mark Specification Table” .
gh : Lot Number … Alphanumeric Serial Number
①②③
④⑤⑥
5
1 2 3
4
2.0±0.2
1.3±0.2
5
1 2 3
4
+0.2
-0.1
1.25
2.1±0.3
0～0.1
Unit : mm
0.2
A
0.65
0.15±0.07
0～14°
0.15
0.36±0.1
+0.1
-0.05
B
0.10 SAB
0.10 S
+0.1
-0.2
0.9
1.1Max.
S
RP112x
NO.EA-258-131024
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• RP112Q Series Mark Specification Table (SC-88A)
RP112Qxx2B RP112Qxx2D
Product Name cdef VSET Product Name cdef VSET
RP112Q122B AU12 1.2V RP112Q122D AV12 1.2V
RP112Q132B AU13 1.3V RP112Q132D AV13 1.3V
RP112Q142B AU14 1.4V RP112Q142D AV14 1.4V
RP112Q152B AU15 1.5V RP112Q152D AV15 1.5V
RP112Q162B AU16 1.6V RP112Q162D AV16 1.6V
RP112Q172B AU17 1.7V RP112Q172D AV17 1.7V
RP112Q182B AU18 1.8V RP112Q182D AV18 1.8V
RP112Q192B AU19 1.9V RP112Q192D AV19 1.9V
RP112Q202B AU20 2.0V RP112Q202D AV20 2.0V
RP112Q212B AU21 2.1V RP112Q212D AV21 2.1V
RP112Q222B AU22 2.2V RP112Q222D AV22 2.2V
RP112Q232B AU23 2.3V RP112Q232D AV23 2.3V
RP112Q242B AU24 2.4V RP112Q242D AV24 2.4V
RP112Q252B AU25 2.5V RP112Q252D AV25 2.5V
RP112Q262B AU26 2.6V RP112Q262D AV26 2.6V
RP112Q272B AU27 2.7V RP112Q272D AV27 2.7V
RP112Q282B AU28 2.8V RP112Q282D AV28 2.8V
RP112Q292B AU29 2.9V RP112Q292D AV29 2.9V
RP112Q302B AU30 3.0V RP112Q302D AV30 3.0V
RP112Q312B AU31 3.1V RP112Q312D AV31 3.1V
RP112Q322B AU32 3.2V RP112Q322D AV32 3.2V
RP112Q332B AU33 3.3V RP112Q332D AV33 3.3V
RP112Q342B AU34 3.4V RP112Q342D AV34 3.4V
RP112Q352B AU35 3.5V RP112Q352D AV35 3.5V
RP112Q362B AU36 3.6V RP112Q362D AV36 3.6V
RP112Q372B AU37 3.7V RP112Q372D AV37 3.7V
RP112Q382B AU38 3.8V RP112Q382D AV38 3.8V
RP112Q392B AU39 3.9V RP112Q392D AV39 3.9V
RP112Q402B AU40 4.0V RP112Q402D AV40 4.0V
RP112Q412B AU41 4.1V RP112Q412D AV41 4.1V
RP112Q422B AU42 4.2V RP112Q422D AV42 4.2V
RP112Q432B AU43 4.3V RP112Q432D AV43 4.3V
RP112Q442B AU44 4.4V RP112Q442D AV44 4.4V
RP112Q452B AU45 4.5V RP112Q452D AV45 4.5V
RP112Q462B AU46 4.6V RP112Q462D AV46 4.6V
RP112Q472B AU47 4.7V RP112Q472D AV47 4.7V
RP112Q482B AU48 4.8V RP112Q482D AV48 4.8V
RP112Q122B5 AU01 1.25V RP112Q122D5 AV01 1.25V
RP112Q182B5 AU02 1.85V RP112Q182D5 AV02 1.85V
RP112Q282B5 AU03 2.85V RP112Q282D5 AV03 2.85V
RP112x
NO.EA-258-131024
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• Power Dissipation (SOT-23-5)
Power Dissipation (PD) depends on conditions of mounting on board. This specification is based on the
measurement at the conditions below:
(Power Dissipation (SOT-23-5) is a substitution of SOT-23-6.)
Measurement Conditions
Standard Test Land Pattern
Environment Mounting on Board (Wind velocity=0m/s)
Board Material Glass cloth epoxy plastic (Double sided)
Board Dimensions 40mm x 40mm x 1.6mm
Copper Ratio Top side: Approx. 50%, Back side: Approx. 50%
Through-holes φ 0.5mm x 44pcs
Measurement Result: (Ta=25°C)
Standard Test Land Pattern Free Air
Power Dissipation 420mW (Tjmax=125°C)
525mW (Tjmax=150°C) 250mW (Tjmax=125°C)
Thermal Resistance θja=(125-25°C)/0.42W=238°C/W 400°C/W
0
100
200
300
400
500
600
0 25 50 75 100 125 150
Ambient Tem
p
erature
(
Cº
)
Power Dissi
p
ation PD
(
mW
)
250
420
525
85
Free Air
Standard Test Land Pattern
Power Dissipation
Measurement Board Pattern
IC Mount Area (Unit: mm)
40
40
The above graph shows that the power dissipation of the package under the conditions of
Tjmax=125°C and Tjmax=150°C. The use under the diagonal line in the graph might have an affect on
the ICs’ lifetime. Please use the ICs within the limited operating time and estimated years as described
below.
Operating Time Estimated Years (4hrs/day)
13,000 hours 9 years
RP112x
NO.EA-258-131024
15
• Package Dimensions (SOT-23-5)
2.9±0.2
1.9±0.2
(0.95) (0.95)
5 4
1 2 3
1.6
-
0.1
+0.2
2.8±0.3
0.4±0.1
0.8±0.1
1.1±0.1
0～0.1
0.15
-
0.05
+0.1
Unit : mm
0.2min.
• Mark Specification (SOT-23-5)
cde: Product Code …Refer to “RP112N Series Mark Specification Table” .
fg : Lot Number … Alphanumeric Serial Number
5 4
cdefg
123
RP112x
NO.EA-258-131024
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• RP112N Series Mark Specification Table (SOT-23-5)
RP112Nxx1B RP112Nxx1D
Product Name cde VSET Product Name cde VSET
RP112N121B K12 1.2V RP112N121D L12 1.2V
RP112N131B K13 1.3V RP112N131D L13 1.3V
RP112N141B K14 1.4V RP112N141D L14 1.4V
RP112N151B K15 1.5V RP112N151D L15 1.5V
RP112N161B K16 1.6V RP112N161D L16 1.6V
RP112N171B K17 1.7V RP112N171D L17 1.7V
RP112N181B K18 1.8V RP112N181D L18 1.8V
RP112N191B K19 1.9V RP112N191D L19 1.9V
RP112N201B K20 2.0V RP112N201D L20 2.0V
RP112N211B K21 2.1V RP112N211D L21 2.1V
RP112N221B K22 2.2V RP112N221D L22 2.2V
RP112N231B K23 2.3V RP112N231D L23 2.3V
RP112N241B K24 2.4V RP112N241D L24 2.4V
RP112N251B K25 2.5V RP112N251D L25 2.5V
RP112N261B K26 2.6V RP112N261D L26 2.6V
RP112N271B K27 2.7V RP112N271D L27 2.7V
RP112N281B K28 2.8V
RP112N281D L28 2.8V
RP112N291B K29 2.9V RP112N291D L29 2.9V
RP112N301B K30 3.0V RP112N301D L30 3.0V
RP112N311B K31 3.1V RP112N311D L31 3.1V
RP112N321B K32 3.2V RP112N321D L32 3.2V
RP112N331B K33 3.3V RP112N331D L33 3.3V
RP112N341B K34 3.4V RP112N341D L34 3.4V
RP112N351B K35 3.5V RP112N351D L35 3.5V
RP112N361B K36 3.6V RP112N361D L36 3.6V
RP112N371B K37 3.7V RP112N371D L37 3.7V
RP112N381B K38 3.8V RP112N381D L38 3.8V
RP112N391B K39 3.9V RP112N391D L39 3.9V
RP112N401B K40 4.0V RP112N401D L40 4.0V
RP112N411B K41 4.1V RP112N411D L41 4.1V
RP112N421B K42 4.2V RP112N421D L42 4.2V
RP112N431B K43 4.3V RP112N431D L43 4.3V
RP112N441B K44 4.4V RP112N441D L44 4.4V
RP112N451B K45 4.5V RP112N451D L45 4.5V
RP112N461B K46 4.6V RP112N461D L46 4.6V
RP112N471B K47 4.7V RP112N471D L47 4.7V
RP112N481B K48 4.8V RP112N481D L48 4.8V
RP112N121B5 K01 1.25V RP112N121D5 L01 1.25V
RP112N181B5 K02 1.85V RP112N181D5 L02 1.85V
RP112N281B5 K03 2.85V RP112N281D5 L03 2.85V
RP112x
NO.EA-258-131024
17
TEST CIRCUIT
C1 RP112x
Series
V
DD
V
OUT
CE GND
V
C2 V
OUT
I
OUT
C1=Ceramic 1.0μF
C2=Ceramic 1.0μF
Basic Test Circuit
C1 RP112x
Series
V
DD
V
OUT
CE GND
C2
AI
SS
C1=Ceramic 1.0μF
C2=Ceramic 1.0μF
V
OUT
Test Circuit for Supply Current
RP112x
Series
V
DD
V
OUT
CE GND
C2
Pulse
Generator
I
OUT
C2=Ceramic 1.0μF
P. G.
Test Circuit for Ripple Rejection
C1 RP112x
Series
V
DD
V
OUT
CE GND
C2
I
OUTa
I
OUTb
C1=Ceramic 1.0μF
C2=Ceramic 1.0μF
V
OUT
Test Circuit for Load Transient Response
RP112x
NO.EA-258-131024
18
Typical Characteristics
1) Output Voltage vs. Output Current (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF, Topt=25°C)
RP112x12xx RP112x28xx
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 50 100 150 200 250 300
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
VIN=2.0V
VIN=3.0V
VIN=4.0V
VIN=5.25V
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 50 100 150 200 250 300
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
VIN=3.1V
VIN=3.8V
VIN=4.1V
VIN=4.8V
VIN=5.25V
RP112x40xx RP112x48xx
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 50 100 150 200 250 300
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
VIN=4.3V
VIN=4.5V
VIN=4.8V
VIN=5.25V
0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
4.8
5.4
0 50 100 150 200 250 300
Output Current I
OUT
(mA)
Output Voltage V
OUT
(V)
VIN=5.25V
2) Output Voltage vs. Input Voltage (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF, Topt=25°C)
RP112x12xx RP112x28xx
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage V
IN
(V)
Output Voltage V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=50mA
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage V
IN
(V)
Output Voltage V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=50mA
RP112x
NO.EA-258-131024
19
RP112x40xx RP112x48xx
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage V
IN
(V)
Output Voltage V
OUT
(V)
IOUT=1mA
IOUT=30mA
IOUT=50mA
0
0.6
1.2
1.8
2.4
3.0
3.6
4.2
4.8
5.4
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
Output Voltage VOUT (V)
IOUT=1mA
IOUT=30mA
IOUT=50mA
3) Supply Current vs. Input Voltage (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF, Topt=25°C)
RP112x12xx RP112x28xx
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage V
IN
(V)
Supply Current I
SS
(µA)
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage V
IN
(V)
Supply Current I
SS
(µA)
RP112x40xx RP112x48xx
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage V
IN
(V)
Supply Current I
SS
(µA)
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage V
IN
(V)
Supply Current I
SS
(µA)
RP112x
NO.EA-258-131024
20
4) Output Voltage vs. Temperature (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF, IOUT=1mA)
RP112x12xx RP112x28xx
1.15
1.16
1.17
1.18
1.19
1.20
1.21
1.22
1.23
1.24
1.25
-50-25 0 255075100
Temperature Topt (ﾟC)
Output Voltage V
OUT
(V)
V
IN
=2.2V
2.75
2.76
2.77
2.78
2.79
2.80
2.81
2.82
2.83
2.84
2.85
-50-25 0 255075100
Temperature Topt (ﾟC)
Output Voltage V
OUT
(V)
V
IN
=3.8V
RP112x40xx RP112x48xx
3.95
3.96
3.97
3.98
3.99
4.00
4.01
4.02
4.03
4.04
4.05
-50-25 0 255075100
Temperature Topt (ﾟC)
Output Voltage V
OUT
(V)
V
IN
=5.0V
4.75
4.76
4.77
4.78
4.79
4.80
4.81
4.82
4.83
4.84
4.85
-50-25 0 255075100
Temperature Topt (
ﾟ
C)
Output Voltage V
OUT
(V)
V
IN
=5.25V
5) Supply Current vs. Temperature (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF,IOUT=0mA)
RP112x12xx RP112x28xx
50
55
60
65
70
75
80
-50 -25 0 25 50 75 100
Temperature Topt (ﾟC)
Supply Current I
SS
(µA)
V
IN
=2.2V
50
55
60
65
70
75
80
-50-25 0 25 50 75100
Temperature Topt (ﾟC)
Supply Current I
SS
(µA)
V
IN
=3.8V
RP112x
NO.EA-258-131024
21
RP112x40xx RP112x48xx
50
55
60
65
70
75
80
-50 -25 0 25 50 75 100
Temperature Topt (ﾟC)
Supply Current I
SS
(µA)
V
IN
=5.0V
50
55
60
65
70
75
80
85
90
95
100
-50-250255075100
Temperature Topt (ﾟC)
Supply Current I
SS
(µA)
V
IN
=5.25V
6) Dropout Voltage vs. Output Current (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF)
RP112x12xx RP112x28xx
0
50
100
150
200
250
300
350
400
450
500
0 50 100 150
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(mV)
85ﾟC
25ﾟC
-40ﾟC
0
50
100
150
200
250
050100150
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(mV)
85ﾟC
25ﾟC
-40ﾟC
RP112x40xx RP112x48xx
0
50
100
150
200
250
0 50 100 150
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(mV)
85ﾟC
25ﾟC
-40ﾟC
0
20
40
60
80
100
120
140
160
180
200
050100150
Output Current I
OUT
(mA)
Dropout Voltage V
DIF
(mV)
85ﾟC
25ﾟC
-40ﾟC
RP112x
NO.EA-258-131024
22
7) Dropout Voltage vs. Set Output Voltage (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF, Topt=25°C)
0
50
100
150
200
250
300
350
400
0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 5.2
Set Output Voltage V
REG
(V)
Dropout Voltage V
DIF
(mV)
150mA
50mA
30mA
1mA
8) Dropout Voltage vs. Temperature (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF)
RP112x12xx RP112x28xx
0
50
100
150
200
250
300
350
400
450
500
-50 -25 0 25 50 75 100
Temperature Topt (ﾟC)
Dropout Voltage VDIF (mV)
150mA
100mA
50mA
0
50
100
150
200
250
-50 -25 0 25 50 75 100
Temperature Topt (ﾟC)
Dropout Voltage VDIF (mV)
150mA
100mA
50mA
RP112x40xx RP112x48xx
0
50
100
150
200
250
-50 -25 0 25 50 75 100
Temperature Topt (ﾟC)
Dropout Voltage VDIF (mV)
150mA
100mA
50mA
0
20
40
60
80
100
120
140
160
180
200
-50 -25 0 25 50 75 100
Temperature Topt (ﾟC)
Dropout Voltage V
DIF
(mV)
150mA
100mA
50mA
RP112x
NO.EA-258-131024
23
9) Ripple Rejection vs. Input Voltage
(C1
=
none, C2
=
Ceramic 1.0
μ
F, Ripple
=
0.2Vp-p, T
opt
=
25
°
C)
RP112x12xx RP112x12xx
0
10
20
30
40
50
60
70
80
90
100
110
120
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
IOUT=1mA
0
10
20
30
40
50
60
70
80
90
100
110
120
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
IOUT=30mA
RP112x28xx RP112x28xx
0
10
20
30
40
50
60
70
80
90
100
110
120
2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
IOUT=1mA
0
10
20
30
40
50
60
70
80
90
100
110
120
2.5 3.0 3.5 4.0 4.5 5.0
Input Voltage VIN (V)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
IOUT=30mA
RP112x40xx RP112x40xx
0
10
20
30
40
50
60
70
80
90
100
110
120
4.0 4.3 4.6 4.9 5.2
Input Voltage VIN (V)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
IOUT=1mA
0
10
20
30
40
50
60
70
80
90
100
110
120
4.0 4.3 4.6 4.9 5.2
Input Voltage VIN (V)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
IOUT=30mA
RP112x
NO.EA-258-131024
24
10) Ripple Rejection vs. Output Current
(C1
=
none, C2
=
Ceramic 1. 0
μ
F, Ripple
=
0.2Vp-p, T
opt
=
25
°
C)
RP112x12xx RP112x28xx
0
10
20
30
40
50
60
70
80
90
100
110
0 50 100 150
Output Current I
OUT
(mA)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
V
IN
=2.2V
0
10
20
30
40
50
60
70
80
90
100
110
120
0 50 100 150
Output Current IOUT (mA)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
VIN=3.8V
RP112x40xx
0
10
20
30
40
50
60
70
80
90
100
110
0 50 100 150
Output Current IOUT (mA)
Ripple Rejection RR (dB)
f=100Hz
f=1kHz
f=10kHz
f=100kHz
VIN=5.0V
11) Ripple Rejection vs. Frequency (C1=none, C2=Ceramic 1.0μF, Ripple=0.2Vp-p, Topt=25°C)
RP112x12xx RP112x28xx
0
10
20
30
40
50
60
70
80
90
100
110
120
0.1 1 10 100 1000
Frequency f (kHz)
Ripple Rejection RR (dB)
1mA
30mA
50mA
100mA
150mA
V
IN
=2.2V
0
10
20
30
40
50
60
70
80
90
100
110
120
0.1 1 10 100 1000
Frequency f (kHz)
Ripple Rejection RR (dB)
1mA
30mA
50mA
100mA
150mA
V
IN
=3.8V
RP112x
NO.EA-258-131024
25
RP112x40xx
0
10
20
30
40
50
60
70
80
90
100
110
120
0.1 1 10 100 1000
Frequency f (kHz)
Ripple Rejection RR (dB)
1mA
30mA
50mA
100mA
150mA
V
IN
=5.0V
12) Output Spectral Noise Density vs. Frequency (C1=none, C2=Ceramic 1.0μF, Topt=25°C)
RP112x12xx RP112x28xx
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1 1 10 100
Frequency f (kHz)
Output Spectral Noise Density µV/√Hz(V)
150mA
30mA
V
IN
=2.2V
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1 1 10 100
Frequency f (kHz)
Output Spectral Noise Density µV/
√Hz(V)
150mA
30mA
V
IN=
3.8
V
RP112x40xx RP112x48xx
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1 1 10 100
Frequency f (kHz)
Output Spectral Noise Density µV/
√Hz(V)
150mA
30mA
V
IN
=5.
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.01 0.1 1 10 100
Frequency f (kHz)
Output Spectral Noise Density µV/√Hz (V)
150mA
30mA
V
IN
=5.25
V
RP112x
NO.EA-258-131024
26
13) Input Transient Response (C1=none, C2=Ceramic 1.0μF, IOUT=30mA, tr=tf=5.0μs, Topt=25°C)
RP112x12xx RP112x28xx
1.185
1.190
1.195
1.200
1.205
0 102030405060708090100
Time t (µs )
Output Voltage V
OUT
(V)
1.0
1.5
2.0
2.5
3.0
3.5
Input Voltage V
IN
(V)
Input Voltage
2.2V ⇔ 3.2V
Output Voltage
2.785
2.790
2.795
2.800
2.805
0 102030405060708090100
Time t (µs)
Output Voltage V
OUT
(V)
2.5
3.0
3.5
4.0
4.5
5.0
Input Voltage V
IN
(V)
Input Voltage
3.8V ⇔ 4.8V
Output Voltage
RP112x40xx RP112x48xx
3.985
3.990
3.995
4.000
4.005
0 102030405060708090100
Time t (µs)
Output Voltage V
OUT
(V)
3.0
3.5
4.0
4.5
5.0
5.5
Input Voltage V
IN
(V)
Input Voltage
4.5V ⇔ 5.25V
Output Voltage
4.785
4.790
4.795
4.800
4.805
0 102030405060708090100
Time t (µs )
Output Voltage V
OUT
(V)
3.0
3.5
4.0
4.5
5.0
5.5
Input Voltage V
IN
(V)
Input Voltage
5.0V ⇔ 5.25V
Output Voltage
14) Load Transient Response (C1=Ceramic 1.0μF,C2=Ceramic 1.0μF, tr=tf=0.5μs,Topt=25°C)
RP112x12xx RP112x12xx
1.16
1.18
1.20
1.22
0 102030405060708090100
Time t (µs)
Output Voltage V
OUT
(V)
0
50
100
150
Output Current I
OUT
(mA)
V
IN
=2.2V
Output Current
50mA ⇔ 100mA
Output Voltage
1.10
1.15
1.20
1.25
0 20 40 60 80 100 120 140 160 180 200
Time t (µs)
Output Voltage V
OUT
(V)
0
150
300
Output Current I
OUT
(mA)
V
IN
=2.2V
Output Current
1mA ⇔ 150mA
Output Voltage
RP112x
NO.EA-258-131024
27
RP112x28xx RP112x28xx
2.76
2.78
2.80
2.82
0 102030405060708090100
Time t (µs)
Output Voltage V
OUT
(V)
0
50
100
150
Output Current I
OUT
(mA)
V
IN
=3.8V
Output Current
50mA ⇔ 100mA
Output Voltage
2.70
2.75
2.80
2.85
0 20 40 60 80 100 120 140 160 180 200
Time t (µs )
Output Voltage V
OUT
(V)
0
150
300
Output Current I
OUT
(mA)
V
IN
=3.8V
Output Current
1mA ⇔ 150mA
Output Voltage
RP112x40xx RP112x40xx
3.96
3.98
4.00
4.02
0 102030405060708090100
Time t (µs)
Output Voltage V
OUT
(V)
0
50
100
150
Output Current I
OUT
(mA)
V
IN
=5.0V
Output Current
50mA ⇔ 100mA
Output Voltage
3.90
3.95
4.00
4.05
0 20 40 60 80 100 120 140 160 180 200
Time t (µs )
Output Voltage V
OUT
(V)
0
150
300
Output Current I
OUT
(mA)
V
IN
=5.0V
Output Current
1mA ⇔ 150mA
Output Voltage
RP112x48xx RP112x48xx
4.70
4.75
4.80
4.85
0 102030405060708090100
Time t (µs)
Output Voltage V
OUT
(V)
0
50
100
150
Output Current I
OUT
(mA)
V
IN
=5.25V
Output Current
50mA ⇔ 100mA
Output Voltage
4.70
4.75
4.80
4.85
0 20 40 60 80 100 120 140 160 180 200
Time t (µs )
Output Voltage V
OUT
(V)
0
150
300
Output Current I
OUT
(mA)
V
IN
=5.25V
Output Current
1mA ⇔ 150mA
Output Voltage
RP112x
NO.EA-258-131024
28
15) Turn on Speed with CE pin (C1=Ceramic 1.0μF, C2=Ceramic 1.0μF, Topt=25°C)
RP112x12xx RP112x28xx
0.0
0.4
0.8
1.2
1.6
0 50 100 150 200 250
Time t (µs)
Output Voltage V
OUT
(V)
0
1
2
3
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
0V ⇒ 2.2V
V
IN
=2.2V
0
0.0
0.6
1.2
1.8
2.4
3.0
0 50 100 150 200 250
Time t (µs)
Output Voltage V
OUT
(V)
0
2
4
6
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
0V ⇒ 3.8V
V
IN
=3.8V
0
RP112x40xx RP112x48xx
0
1
2
3
4
5
0 50 100 150 200 250
Time t (µs)
Output Voltage V
OUT
(V)
0
2
4
6
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
0V ⇒ 5.0V
V
IN
=5.0V
0
1
2
3
4
5
0 50 100 150 200 250
Time t (µs)
Output Voltage V
OUT
(V)
0
2
4
6
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
0V ⇒ 5.25V
V
IN
=5.25V
16) Turn off Speed with CE pin (B Version)
(C1
=
Ceramic 1.0
μ
F, C2
=
Ceramic 1.0
μ
F, T
opt
=
25
°
C)
RP112x12xx RP112x28xx
0.0
0.4
0.8
1.2
1.6
0 40 80 120 160 200
Time t (s )
Output Voltage V
OUT
(V)
0
1
2
3
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
2.2V ⇒ 0V
V
IN
=2.2V
0
0.0
0.6
1.2
1.8
2.4
3.0
0 40 80 120 160 200
Time t (s)
Output Voltage V
OUT
(V)
0
2
4
6
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
3.8V ⇒ 0V
V
IN
=3.8V
0
RP112x
NO.EA-258-131024
29
RP112x40xB
0
1
2
3
4
5
0 40 80 120 160 200
Time t (s)
Output Voltage V
OUT
(V)
0
2
4
6
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
5.0V ⇒ 0V
V
IN
=5.0V
17) Turn off Speed with CE pin (D Version)
(C1
=
Ceramic 1.0
μ
F, C2
=
Ceramic 1.0
μ
F, T
opt
=
25
°
C)
RP112x12xD RP112x28xD
0.0
0.4
0.8
1.2
1.6
0 200 400 600 800 1000 1200
Time t (µs)
Output Voltage V
OUT
(V)
0
1
2
3
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
2.2V ⇒ 0V
V
IN
=2.2V
0
0.0
0.6
1.2
1.8
2.4
3.0
0 200 400 600 800 1000 1200
Time t (µs )
Output Voltage V
OUT
(V)
0
2
4
6
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
3.8V ⇒ 0V
V
IN
=3.8V
0
RP112x40xD
0
1
2
3
4
5
0 200 400 600 800 1000 1200
Time t (µs)
Output Voltage V
OUT
(V)
0
2
4
6
CE Input Voltage V
CE
(V)
IOUT=0mA
IOUT=30mA
IOUT=150mA
Output Voltage
CE Input Voltage
5.0V ⇒ 0V
V
IN
=5.0V
RP112x
NO.EA-258-131024
30
18) Inrush Current (C1=Ceramic 1.0μF, IOUT=0mA, Topt=25°C)
RP112x12xx RP112x28xx
0
0.4
0.8
1.2
1.6
2.0
2.4
0 30 60 90 120 150
Time t (µs )
Output Voltage VOU T (V)
-100
0
100
200
300
Inrush Current Irush (mA
)
CE
C2=1.0µF
C2=1.5µF
C2=2.2µF
C2=3.3µF
Output Voltage
CE Input Voltage
0V ⇒ 2.2V
VIN=2.2V
Inrush Current
0
0.7
1.4
2.1
2.8
3.5
4.2
0 30 60 90 120 150
Time t (µs)
Output Voltage V
OUT
(V)
-100
0
100
200
300
Inrush Current Irush (mA)
CE
C2=1.0µF
C2=1.5µF
C2=2.2µF
Output Voltage
CE Input Voltage
0V ⇒ 3.8V
V
IN
=3.8V
Inrush Current
RP112x40xx RP112x48xx
0
1
2
3
4
5
6
0 30 60 90 120 150
Time t (µs)
Output Voltage V
OUT
(V)
-100
0
100
200
300
Inrush Current Irush (mA)
CE
C2=1.0µF
C2=1.5µF
C2=2.2µF
Output Voltage
CE Input Voltage
0V ⇒ 5.0V
V
IN
=5.0V
Inrush Current
0
1
2
3
4
5
6
0 30 60 90 120 150
Time t (µs )
Output Voltage V
OUT
(V)
-100
0
100
200
300
Inrush Current Irush (mA)
CE
C2=1.0µF
C2=1.5µF
C2=2.2µF
Output Voltage
CE
I
npu
t
V
o
lt
age
0V ⇒ 5.25V
V
IN
=5.25V
Inrush Current
RP112x
NO.EA-258-131024
31
ESR vs.Output Current
When using these ICs, consider the following points:
The relations between IOUT (Output Current) and ESR of an output capacitor are shown below.
The conditions when the white noise level is under 40μV (Avg.) are marked as the hatched area in the graph.
Measurement Conditions
Frequency Band : 10Hz to 2MHz
Temperature : −40ﾟC to 85ﾟC
Hatched Area : Noise level is under 40μV(Avg.)
C1,C2 : 1.0μF or more
RP112x12xx RP112x28xx
0.01
0.1
1
10
100
1000
0 25 50 75 100 125 150
Output Current I
OUT
(mA)
ESR (Ω)
V
IN
=2.0V to 5.25V
0.01
0.1
1
10
100
1000
0 25 50 75 100 125 150
Output Current I
OUT
(mA)
ESR (Ω)
V
IN
=2.8V to 5.25V
RP112x40xx
0.01
0.1
1
10
100
1000
0 25 50 75 100 125 150
Output Current I
OUT
(mA)
ESR (Ω)
V
IN
=4.0V to 5.25V
RICOHCOMPANY,LTD.
ElectronicDevicesCompany
http://www.ricoh.com/LSI/
For the conservation of the global environment, Ricoh is advancing the decrease of the negative environmental impact material.
After Apr. 1, 2006, we will ship out the lead free products only. Thus, all products that will be shipped from now on comply with RoHS Directive.
Basically after Apr. 1, 2012, we will ship out the Power Management ICs of the Halogen Free products only. (Ricoh Halogen Free products are
also Antimony Free.)
Halogen Free
RICOHCOMPANY,LTD.
ElectronicDevicesCompany
●Higashi-ShinagawaOffice(InternationalSales)
3-32-3,Higashi-Shinagawa,Shinagawa-ku,Tokyo140-8655,Japan
Phone:+81-3-5479-2857Fax:+81-3-5479-0502
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●SemiconductorSupportCentre
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P.O.Box114,1180ACAmstelveen
Phone:+31-20-5474-309Fax:+31-20-5474-791
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Phone:+82-2-2135-5700Fax:+82-2-2135-5705
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Room403,No.2Building,690#BiBoRoad,PuDongNewdistrict,Shanghai201203,
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Phone:+86-21-5027-3200Fax:+86-21-5027-3299
RICOHCOMPANY,LTD.
ElectronicDevicesCompany
●Taipeioffice
Room109,10F-1,No.51,HengyangRd.,TaipeiCity,Taiwan(R.O.C.)
Phone:+886-2-2313-1621/1622Fax:+886-2-2313-1623
1.Theproductsandtheproductspecificationsdescribedinthisdocumentaresubjecttochangeor
discontinuationofproductionwithoutnoticeforreasons
suchasimprovement.Therefore,before
decidingtousetheproducts,pleaserefertoRicohsalesrepresentativesforthelatest
informationthereon.
2.Thematerialsinthisdocumentmaynotbecopiedorotherwisereproducedinwholeorinpart
withoutpriorwrittenconsentofRicoh.
3.Pleasebesuretotakeanynecessaryformalitiesunderrelevantlawsorregulationsbefore
exportingorotherwisetakingoutofyourcountrytheproductsorthetechnicalinformation
describedherein.
4.Thetechnicalinformationdescribedinthisdocumentshowstypicalcharacteristicsofand
exampleapplicationcircuitsfortheproducts.Thereleaseofsuchinformationisnottobe
construedasawarrantyoforagrantoflicenseunderRicoh'soranythirdparty'sintellectual
propertyrightsoranyotherrights.
5.
Theproductslistedinthisdocumentareintendedanddesignedforuseasgeneralelectronic
componentsinstandardapplications(officeequipment,telecommunicationequipment,
measuringinstruments,consumerelectronicproducts,amusementequipmentetc.).Those
customersintendingtouse
aproductinanapplicationrequiringextremequalityandreliability,
forexample,inahighlyspecificapplicationwherethefailureormisoperationoftheproduct
couldresultinhumaninjuryordeath(aircraft,spacevehicle,nuclearreactorcontrolsystem,
trafficcontrolsystem,automotiveand
transportationequipment,combustionequipment,safety
devices,lifesupportsystemetc.)shouldfirstcontactus.
6.Wearemakingourcontinuousefforttoimprovethequalityandreliabilityofourproducts,but
semiconductorproductsarelikelytofailwithcertainprobability.Inordertopreventanyinjuryto
personsordamagestopropertyresultingfromsuchfailure,customersshouldbecarefulenough
toincorporatesafetymeasuresintheirdesign,suchasredundancyfeature,firecontainment
featureandfail-safefeature.Wedonotassumeanyliability
orresponsibilityforanylossor
damagearisingfrommisuseorinappropriateuseoftheproducts.
7.Anti-radiationdesignisnotimplementedintheproductsdescribedinthisdocument.
8.
PleasecontactRicohsalesrepresentativesshouldyouhaveanyquestionsorcomments
concerningtheproductsorthetechnicalinformation.