LM7321MFENOPB - TEXAS INSTRUMENTS

LM5050-1

LM5050-1 High Side OR-ing FET Controller

Literature Number: SNVS629A

LM5050-1

September 14, 2011

High Side OR-ing FET Controller

General Description

The LM5050-1 High Side OR-ing FET Controller operates in

conjunction with an external MOSFET as an ideal diode rec-

tifier when connected in series with a power source. This

ORing controller allows MOSFETs to replace diode rectifiers

in power distribution networks thus reducing both power loss

and voltage drops.

The LM5050-1 controller provides charge pump gate drive for

an external N-Channel MOSFET and a fast response com-

parator to turn off the FET when current flows in the reverse

direction. The LM5050-1 can connect power supplies ranging

from +5V to +75V and can withstand transients up to +100V.

Features

■Wide Operating Input Voltage range, VIN: 5V to 75V

■+100 Volt transient capability

■Charge pump gate driver for external N-Channel MOSFET

■Fast 50ns response to current reversal

■2A peak gate turn-off current

■Minimum VDS clamp for faster turn-off

■Package: TSOT-6 (Thin SOT23-6)

Applications

■Active OR-ing of Redundant (N+1) Power Supplies

Typical Application Circuits

30104804

FIGURE 1. Full Application

30104833

FIGURE 2. Typical Redundant Supply Configuration

LM5050-1 High Side OR-ing FET Controller

Connection Diagram

Top View

30104806

LM5050MK-1

TSOT-6 Package

NS Package Number MK06A

Ordering Information

Order

Number

Package

Type Supplied As

LM5050MK-1 TSOT-6 1000 units

Tape and Reel

LM5050MKX-1 TSOT-6 3000 units

Tape and reel

Pin Descriptions

Pin # Name Function

1 VS

The main supply pin for all internal biasing and an auxiliary supply

for the internal gate drive charge pump. Typically connected to

either VOUT or VIN, a separate supply can also be used.

2 GND Ground return for the controller

3 OFF A logic high state at the OFF pin will pull the GATE pin low and turn

off the external MOSFET.

4 IN Voltage sense connection to the external MOSFET Source pin.

5 GATE Connection to the external MOSFET Gate.

6 OUT Voltage sense connection to the external MOSFET Drain pin.

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LM5050-1

Absolute Maximum Ratings (Note 1)

IN, OUT Pins to Ground (Note 4) -0.3V to 100V

GATE Pin to Ground (Note 4) -0.3V to 100V

VS Pin to Ground -0.3V to 100V

OFF Pin to Ground -0.3V to 7V

Storage Temperature Range −65°C to 150°C

ESD (HBM) (Note 2) ±2 kV

Peak Reflow Temperature (Note 3) 260°C, 30sec

Operating Ratings (Note 1)

IN, OUT, VS Pins 5.0V to 75V

OFF Pin 0.0V to 5.5V

Junction Temperature Range (TJ)−40°C to +125°C

Electrical Characteristics Limits in standard type are for TJ = 25°C only; limits in boldface type apply over the

operating junction temperature (TJ) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design,

or statistical correlation. Typical values represent the most likely parametric norm at TJ = 25°C, and are provided for reference

purposes only. Unless otherwise stated the following conditions apply: VIN = 12.0V, VVS = VIN, VOUT = VIN, VOFF = 0.0V,

CGATE= 47 nF, and TJ = 25°C.

Symbol Parameter Conditions Min Typ Max Unit

VS Pin

VVS Operating Supply Voltage Range - 5.0 -75.0 V

IVS Operating Supply Current

VVS= 5.0V, VIN = 5.0V

VOUT = VIN - 100 mV - 75 105

μA

VVS= 12.0V, VIN = 12.0V

VOUT = VIN - 100 mV - 100 147

VVS= 75.0V, VIN = 75.0V

VOUT = VIN - 100 mV - 130 288

IN Pin

VIN Operating Input Voltage Range - 5.0 -75.0 V

IIN IN Pin current

VIN = 5.0V

VVS= VIN

VOUT = VIN - 100 mV

GATE = Open

32 190 305

μA

VIN = 12.0V to 75.0V

VVS= VIN

VOUT = VIN - 100 mV

GATE = Open

233 320 400

OUT Pin

VOUT Operating Output Voltage Range - 5.0 -75.0 V

IOUT OUT Pin Current

VIN = 5.0V to 75.0V

VVS= VIN

VOUT = VIN - 100 mV

- 3.2 8µA

GATE Pin

IGATE(ON) Gate Pin Source Current

VIN = 5.0V

VVS = VIN

VGATE = VIN

VOUT = VIN - 175 mV

12 30 41

µA

VIN = 12.0V to 75.0V

VVS = VIN

VGATE = VIN

VOUT = VIN - 175 mV

20 32 41

VGS

VGATE - VIN in Forward Operation

(Note 7)

VIN = 5.0V

VVS = VIN

VOUT = VIN - 175 mV

4.0 79.0

VIN = 12.0V to 75.0V

VVS = VIN

VOUT = VIN - 175 mV

9.0 12 14.0

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LM5050-1

Symbol Parameter Conditions Min Typ Max Unit

tGATE(REV)

Gate Capacitance Discharge Time at

Forward to Reverse Transition

See Figure 3

CGATE = 0

(Note 5)- 25 85

CGATE = 10 nF

(Note 5)- 60 -

CGATE = 47 nF

(Note 5)- 180 350

tGATE(OFF)

Gate Capacitance DischargeTime at

OFF pin Low to High Transition

See Figure 4

CGATE = 47 nF

(Note 6)- 486 - ns

IGATE(OFF) Gate Pin Sink Current

VGATE = VIN + 3V

VOUT > VIN + 100 mV

t ≤ 10ms

1.8 2.8 - A

VSD(REV)

Reverse VSD Threshold

VIN < VOUT

VIN - VOUT -41 -28 -16 mV

ΔVSD(REV) Reverse VSD Hysteresis - 10 - mV

VSD(REG)

Regulated Forward VSD Threshold

VIN > VOUT

VIN = 5.0V

VVS = VIN

VIN - VOUT

119 37

VIN = 12.0V

VVS = VIN

VIN - VOUT

4.4 22 37

OFF Pin

VOFF(IH) OFF Input High Threshold Voltage VOUT = VIN-500 mV

VOFF Rising - 1.56 1.75

VOFF(IL) OFF Input Low Threshold Voltage VOUT = VIN - 500 mV

VOFF Falling 1.10 1.40 -

ΔVOFF OFF Threshold Voltage Hysteresis VOFF(IH) - VOFF(IL) - 155 - mV

IOFF OFF Pin Internal Pull-down VOFF = 4.5V 3.0 57.0 µA

VOFF = 5.0V - 8 -

Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur, including in-operability and degradation of device reliability

and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in

the Recommended Operating Conditions is not implied. Operating Range conditions indicate the conditions at which the device is functional and the device should

not be operated beyond such conditions. For guaranteed specifications and conditions, see the Electrical Characteristics table.

Note 2: The Human Body Model (HBM) is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. Applicable test standard is JESD-22-A114-C.

Note 3: For soldering specifications see the LM5050-1 Product Folder at www.national.com, general information at www.national.com/analog/packaging/, and

reflow information at www.national.com/ms/MS/MS-SOLDERING.pdf .

Note 4: The GATE pin voltage is typically 12V above the IN pin voltage when the LM5050-1 is enabled (i.e. OFF Pin is Open or Low, and VIN > VOUT). Therefore,

the Absolute Maximum Rating for the IN pin voltage applies only when the LM5050-1 is disabled (i.e. OFF Pin is logic high), or for a momentary surge to that

voltage since the Absolute Maximum Rating for the GATE pin is also 100V

Note 5: Time from VIN-VOUT voltage transition from 200 mV to -500 mV until GATE pin voltage falls to VIN + 1V. See Figure 3

Note 6: Time from VOFF voltage transition from 0.0V to 5.0V until GATE pin voltage falls to VIN + 1V. See Figure 4

Note 7: Measurement of VGS voltage (i.e. VGATE - VIN) includes 1 MΩ in parallel with CGATE.

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LM5050-1

30104825

FIGURE 3. Gate Off Timing for Forward to Reverse Transition

30104826

FIGURE 4. Gate Off Timing for OFF pin Low to High Transition

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LM5050-1

Typical Performance Characteristics

Unless otherwise stated: VVS = 12V, VIN = 12V, VOFF = 0.0V, and TJ = 25°C

IIN vs VIN

30104834

IIN vs VIN

30104819

IOUT vs VOUT

30104835

IOUT vs VOUT

30104820

IVS vs VVS

30104836

IVS vs VVS

30104821

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LM5050-1

(VGATE - VIN) vs VIN, VVS = VOUT

30104811

(VGATE - VIN) vs VIN, VVS = VOUT

30104812

Forward CGATE Charge Time, CGATE = 47 nF

-5 0 5 10 15 20 25 30

VOLTS (V)

TIME (5ms / DIV)

Vin

Vout

Vgate

30104847

Reverse CGATE Discharge, CGATE = 47 nF

-50 0 50 100 150 200 250

VOLTS (V)

TIME (50ns / DIV)

Vin

Vout

Vgate

30104846

VGATE - VIN vs Temperature

30104829

tGATE(REV) vs Temperature

30104830

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LM5050-1

OFF Pin Thresholds vs Temperature

30104827

OFF Pin Pull-Down vs Temperature

30104828

CGATE Charge and Discharge vs OFF Pin

30104815

OFF Pin, On to Off Transition

30104816

OFF Pin, Off to On Transition

30104817

GATE Pin vs (RDS(ON) x IDS)

30104818

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LM5050-1

Block Diagram

30104822

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LM5050-1

Applications Information

FUNCTIONAL DESCRIPTION

Systems that require high availability often use multiple, par-

allel-connected redundant power supplies to improve reliabil-

ity. Schottky OR-ing diodes are typically used to connect

these redundant power supplies to a common point at the

load. The disadvantage of using OR-ing diodes is the forward

voltage drop, which reduces the available voltage and the as-

sociated power losses as load currents increase. Using an N-

channel MOSFET to replace the OR-ing diode requires a

small increase in the level of complexity, but reduces, or elim-

inates, the need for diode heat sinks or large thermal copper

area in circuit board layouts for high power applications.

30104832

FIGURE 5. OR-ing with Diodes

The LM5050-1 is a positive voltage (i.e. high-side) OR-ing

controller that will drive an external N-channel MOSFET to

replace an OR-ing diode. The voltage across the MOSFET

source and drain pins is monitored by the LM5050-1 at the IN

and OUT pins, while the GATE pin drives the MOSFET to

control its operation based on the monitored source-drain

voltage. The resulting behavior is that of an ideal rectifier with

source and drain pins of the MOSFET acting as the anode

and cathode pins of a diode respectively.

30104833

FIGURE 6. OR-ing with MOSFETs

IN, GATE AND OUT PINS

When power is initially applied, the load current will flow from

source to drain through the body diode of the MOSFET. The

resulting voltage across the body diode will be detected at the

LM5050-1 IN and OUT pins which then begins charging the

MOSFET gate through a 32 µA (typical) charge pump current

source . In normal operation, the gate of the MOSFET is

charged until it reaches the clamping voltage of the 12V GATE

to IN pin zener diode internal to the LM5050-1.

The LM5050-1 is designed to regulate the MOSFET gate- to

-source voltage if the voltage across the MOSFET source and

drain pins falls below the VSD(REG) voltage of 22 mV (typical).

If the MOSFET current decreases to the point that the voltage

across the MOSFET falls below the VSD(REG) voltage regula-

tion point of 27 mV (typical), the GATE pin voltage will be

decreased until the voltage across the MOSFET is regulated

at 22 mV. If the drain-to-source voltage is greater than VSD

(REG) voltage the gate-to-source will increase, eventually

reaching the 12V GATE to IN zener clamp level.

If the MOSFET current reverses, possibly due to failure of the

input supply, such that the voltage across the LM5050-1 IN

and OUT pins is more negative than the VSD(REV) voltage of

-28 mV (typical), the LM5050-1 will quickly discharge the

MOSFET gate through a strong GATE to IN pin discharge

transistor.

If the input supply fails abruptly, as would occur if the supply

was shorted directly to ground, a reverse current will tem-

porarily flow through the MOSFET until the gate can be fully

discharged. This reverse current is sourced from the load ca-

pacitance and from the parallel connected supplies. The

LM5050-1 responds to a voltage reversal condition typically

within 25 ns. The actual time required to turn off the MOSFET

will depend on the charge held by gate capacitance of the

MOSFET being used. A MOSFET with 47 nF of effective gate

capacitance can be turned off in typically 180 ns. This fast turn

off time minimizes voltage disturbances at the output, as well

as the current transients from the redundant supplies.

VS PIN

The LM5050-1 VS pin is the main supply pin for all internal

biasing and an auxiliary supply for the internal gate drive

charge pump.

For typical LM5050-1 applications, where the input voltage is

above 5.0V, the VS pin can be connected directly to the OUT

pin. In situations where the input voltage is close to, but not

less than, the 5.0V minimum, it may be helpful to connect the

VS pin to the OUT pin through an RC Low-Pass filter to reduce

the possibility of erratic behavior due to spurious voltage

spikes that may appear on the OUT and IN pins. The series

resistor value should be low enough to keep the VS voltage

drop at a minimum. A typical series resistor value is 100Ω.

The capacitor value should be the lowest value that produces

acceptable filtering of the voltage noise.

Alternately, it is possible to operate the LM5050-1 with VIN

values less than 1V if the VS pin is powered from a separate

supply. This separate VS supply must be between 5.0V and

75V. See Figure 9.

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LM5050-1

OFF PIN

The OFF pin is a logic level input pin that is used to control

the gate drive to the external MOSFET. The maximum oper-

ating voltage on this pin is 5.5V.

When the OFF pin is high, the MOSFET is turned off (inde-

pendent of the sensed IN and OUT voltages). In this mode,

load current will flow through the body diode of the MOSFET.

The voltage difference between the IN pin and OUT pins will

be approximately 700 mV if the MOSFET is operating nor-

mally through the body diode.

The OFF pin has an internal pull-down of 5 µA (typical). If the

OFF function is not required the pin may be left open or con-

nected to ground.

30104823

FIGURE 7.

SHORT CIRCUIT FAILURE OF AN INPUT SUPPLY

An abrupt zero ohm short circuit across the input supply will

cause the highest possible reverse current to flow while the

internal LM5050-1 control circuitry discharges the gate of the

MOSFET. During this time, the reverse current is limited only

by the RDS(ON) of the MOSFET, along with parasitic wiring re-

sistances and inductances. Worst case instantaneous re-

verse current would be limited to:

ID(REV) = (VOUT - VIN) / RDS(ON)

The internal Reverse Comparator will react, and will start the

process of discharging the Gate, when the reverse current

reaches:

ID(REV) = VSD(REV) / RDS(ON)

When the MOSFET is finally switched off, the energy stored

in the parasitic wiring inductances will be transferred to the

rest of the circuit. As a result, the LM5050-1 IN pin will see a

negative voltage spike while the OUT pin will see a positive

voltage spike. The IN pin can be protected by diode clamping

the pin to GND in the negative direction. The OUT pin can be

protected with a TVS protection diode, a local bypass capac-

itor, or both. In low voltage applications, the MOSFET drainto-

source breakdown voltage rating may be adequate to protect

the OUT pin (i.e. VIN + V(BR)DSS(MAX) < 75V ), but most MOS-

FET datasheets do not guarantee the maximum breakdown

rating, so this method should be used with caution.

30104824

FIGURE 8.

MOSFET Selection

The important MOSFET electrical parameters are the maxi-

mum continuous Drain current ID, the maximum Source cur-

rent (i.e. body diode) IS, the maximum drain-to-source voltage

VDS(MAX), the gate-to-source threshold voltage VGS(TH), the

drain-to-source reverse breakdown voltage V(BR)DSS, and the

drain-to-source On resistance RDS(ON).

The maximum continuous drain current, ID, rating must ex-

ceed the maximum continuous load current. The rating for the

maximum current through the body diode, IS, is typically rated

the same as, or slightly higher than the drain current, but body

diode current only flows while the MOSFET gate is being

charged to VGS(TH).

Gate Charge Time = Qg / IGATE(ON)

The maximum drain-to-source voltage, VDS(MAX), must be

high enough to withstand the highest differential voltage seen

in the application. This would include any anticipated fault

conditions.

The drain-to-source reverse breakdown voltage, V(BR)DSS,

may provide some transient protection to the OUT pin in low

voltage applications by allowing conduction back to the IN pin

during positive transients at the OUT pin.

The gate-to-source threshold voltage, VGS(TH), should be

compatible with the LM5050-1 gate drive capabilities. Logic

level MOSFETs, with RDS(ON) rated at VGS(TH) at 5V, are rec-

ommended, but sub-Logic level MOSFETs having RDS(ON)

rated at VGS(TH) at 2.5V, can also be used. Standard level

MOSFETs, with RDS(ON) rated at VGS(TH) at 10V, are not rec-

ommended.

The dominate MOSFET loss for the LM5050-1 active OR-ing

controller is conduction loss due to source-to-drain current to

the output load, and the RDS(ON) of the MOSFET. This con-

duction loss could be reduced by using a MOSFET with the

lowest possible RDS(ON). However, contrary to popular belief,

arbitrarily selecting a MOSFET based solely on having low

RDS(ON) may not always give desirable results for several rea-

sons:

1) Reverse transition detection. Higher RDS(ON) will provide

increased voltage information to the LM5050-1 Reverse

Comparator at a lower reverse current level. This will give an

earlier MOSFET turn-off condition should the input voltage

become shorted to ground. This will minimize any disturbance

of the redundant bus.

2) Reverse current leakage. In cases where multiple input

supplies are closely matched it may be possible for some

small current to flow continuously through the MOSFET drain

to source (i.e. reverse) without activating the LM5050-1 Re-

verse Comparator. Higher RDS(ON) will reduce this reverse

current level.

3) Cost. Generally, as the RDS(ON) rating goes lower, the cost

of the MOSFET goes higher.

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LM5050-1

Selecting a MOSFET with an RDS(ON) that is too large will re-

sult in excessive power dissipation. Additionally, the MOS-

FET gate will be charged to the full value that the LM5050-1

can provide as it attempts to drive the Drain to Source voltage

down to the VSD(REG) of 22 mV typical. This increased Gate

charge will require some finite amount of additional discharge

time when the MOSFET needs to be turned off.

As a guideline, it is suggest that RDS(ON) be selected to provide

at least 22 mV, and no more than 100 mV, at the nominal load

current.

(22 mV / ID) ≤ RDS(ON) ≤ (100mV / ID)

The thermal resistance of the MOSFET package should also

be considered against the anticipated dissipation in the MOS-

FET in order to ensure that the junction temperature (TJ) is

reasonably well controlled, since the RDS(ON) of the MOSFET

increases as the junction temperature increases.

PDISS = ID2 x (RDS(ON))

Operating with a maximum ambient temperature (TA(MAX)) of

35°C, a load current of 10A, and an RDS(ON) of 10 mΩ, and

desiring to keep the junction temperature under 100°C, the

maximum junction-to-ambient thermal resistance rating (θJA)

would need to be:

θJA ≤ (TJ(MAX) - TA(MAX))/(ID2 x RDS(ON))

θJA ≤ (100°C - 35°C)/(10A x 10A x 0.01Ω)

θJA ≤ 65°C/W

Typical Applications

30104845

FIGURE 9. Using a Separate VS Supply For Low Vin Operation

30104842

FIGURE 10. Basic Application with Input Transient Protection

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LM5050-1

30104843

FIGURE 11. Typical Application with Input and Output Transient Protection

30104844

FIGURE 12. +48V Application with Reverse Input Voltage (VIN = -48V) Protection

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LM5050-1

Physical Dimensions inches (millimeters) unless otherwise noted

6-Lead TSOT Package

NS Package Number MK06A

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LM5050-1

Notes

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LM5050-1

Notes

LM5050-1 High Side OR-ing FET Controller

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Following are URLs where you can obtain information on other Texas Instruments products and application solutions:

Products Applications

Audio www.ti.com/audio Communications and Telecom www.ti.com/communications

Amplifiers amplifier.ti.com Computers and Peripherals www.ti.com/computers

Data Converters dataconverter.ti.com Consumer Electronics www.ti.com/consumer-apps

DLP®Products www.dlp.com Energy and Lighting www.ti.com/energy

DSP dsp.ti.com Industrial www.ti.com/industrial

Clocks and Timers www.ti.com/clocks Medical www.ti.com/medical

Interface interface.ti.com Security www.ti.com/security

Logic logic.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense

Power Mgmt power.ti.com Transportation and Automotive www.ti.com/automotive

Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video

RFID www.ti-rfid.com

OMAP Mobile Processors www.ti.com/omap

Wireless Connectivity www.ti.com/wirelessconnectivity

TI E2E Community Home Page e2e.ti.com

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265