UPA801T
NPN SILICON HIGH
FREQUENCY TRANSISTOR
SILICON TRANSISTOR
•SMALL PACKAGE STYLE:
2 NE856 Die in a 2 mm x 1.25 mm package
•LOW NOISE FIGURE:
NF = 1.2 dB TYP at 1 GHz
•HIGH GAIN:
|S21E|2 = 9.0 dB TYP at 1 GHz
•HIGH COLLECTOR CURRENT: 100mA
FEATURES OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE S06
(Top View)
DESCRIPTION
The UPA801T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
fT, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
Notes: 1.Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA801T-T1, 3K per reel.
.
Note:
Pin 3 is identified with a circle on the bottom of the package.
PIN OUT
1. Collector Transistor 1
2. Emitter Transistor 1
3. Collector Transistor 2
4. Emitter Transistor 2
5. Base Transistor 2
6. Base Transistor 1
T108APUREBMUN TRAP
60SENILTUO EGAKCAP
SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX
ICBOCollector Cutoff Current at VCB = 10 V, IE = 0 μ0.1A
IEBOEmitter Cutoff Current at VEB = 1 V, IC = 0 μ0.1A
hFE1Forward Current Gain at VCE = 3 V, IC05202107Am 7 =
fTGain Bandwidth at VCE = 3 V, IC = 7 mA GHz 3.0 4.5
Cre2Feedback Capacitance at VCB = 3 V, IE5.17.0FpzHM 1 = f ,0 =
|S21E|2Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 7 9
NF Noise Figure at VCE = 3 V, IC 5.22.1BdzHG 1 = f ,Am 7 =
hFE1/hFE2 hFE Ratio: hFE1 = Smaller Value of Q1 or Q20.85
hFE2 = Larger Value pf Q1 or Q2
ELECTRICAL CHARACTERISTICS (TA = 25°C)
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
0.15
0.9 ± 0.1
0.7
2.0 ± 0.2
0.65
1.3
1
2
34
5
6
0.2 (All Leads)
+0.10
- 0.05
Note: 1. Operation in excess of any one of these parameters may
result in permanent damage.
SYMBOLS PARAMETERS UNITS RATINGS
VCBO Collector to Base Voltage V 20
VCEO Collector to Emitter Voltage V 12
VEBO Emitter to Base Voltage V 3
ICCollector Current mA 100
PTTotal Power Dissipation
1 Die mW 110
2 Die mW 200
TJJunction Temperature °C 150
TSTG Storage Temperature °C -65 to +150
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
UPA801T
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
Total Power Dissipation, P
T
(mW)
Ambient Temperature, TA (°C) Base to Emitter Voltage, VBE (V)
Collector Current, I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage, VCE (V)
Collector Current, I
C
(mA)
TYPICAL PERFORMANCE CURVES (TA = 25°C)
200
100
0 50 100 150
2 Elements in Total
Per Element
20
0.5 1.0
10
0
VCE = 3 V
25
20
15
10
5
0510
lB=160 µA
140 µA
120 µA
100 µA
80 µA
60 µA
40 µA
20 µA
DC Current Gain, h
FE
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Collector Current, IC (mA)
200
100
50
20
10
0.5 1 5 10 50
V
CE
= 3 V
UPA801T
TYPICAL PERFORMANCE CURVES (TA = 25°C)
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
Gain Bandwidth Product, f
T
(GHz)
Collector Current, IC (mA) Collector Current, IC (mA)
Collector to Base Voltage, VCB (V)
Feed Back Capacitance, C
RE
(pF)
INSERTION POWER GAIN vs.
FREQUENCY
Noise Figure (dB)
NOISE FIGURE vs.
COLLECTOR CURRENT
FEED BACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
Frequency, f (GHz)
Collector Current, IC (mA)
Insertion Power Gain, IS
21e
I
2
(dB) Insertion Power Gain, IS
21e
I
2
(dB)
20
10
5
2
1
0.5 1 5 10 50
V
CE
= 3 V
f = 1 GHz
15
10
5
0
0.5 1 5 10 50 100
V
CE
= 3 V
f = 1 GHz
6
4
2
0
0.5 1.0 5.0 10 50 100
V
CE
= 3 V
f = 1 GHz
24
20
16
12
4
8
0
0.1 0.2 0.5 1.0 2.0 5.0
V
CE
= 3 V
lc = 7 mA
5.0
2.0
1.0
0.5
0.2
0.1
12 51020 50
f = 1 MHz
UPA801T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
VCE = 3 V, IC = 3 mA, Z0 = 50 ΩΩ
ΩΩ
Ω
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.10 .899 -30.5 5.578 153.7 .042 69.0 .923 -17.3
0.20 .808 -60.0 5.327 134.4 .069 54.5 .793 -29.2
0.30 .723 -86.7 4.877 119.6 .084 46.0 .679 -36.4
0.40 .660 -106.2 4.341 108.1 .093 41.1 .604 -39.5
0.50 .610 -125.9 3.883 98.5 .098 38.8 .550 -42.0
0.60 .583 -138.6 3.388 90.9 .102 37.4 .613 -44.2
0.70 .560 -150.0 3.046 84.3 .106 37.8 .487 -45.9
0.80 .547 -159.4 2.741 78.5 .108 38.1 .468 -47.9
0.90 .538 -167.4 2.498 73.4 .112 39.5 .455 -49.9
1.00 .535 -174.4 2.287 68.9 .116 41.0 .444 -52.3
1.10 .534 179.3 2.111 64.6 .120 43.0 .435 -54.7
1.20 .533 173.4 1.965 60.2 .125 45.1 .429 57.2
1.30 .533 168.3 1.830 56.3 .131 46.7 .424 -59.9
1.40 .534 163.2 1.721 52.7 .139 48.3 .422 -62.8
1.50 .538 158.7 1.620 49.2 .146 49.8 .417 -65.7
1.60 .542 154.3 1.544 45.7 .155 51.3 .414 -68.8
1.70 .545 150.0 1.464 42.7 .164 52.4 .415 -72.0
1.80 .548 146.1 1.396 39.5 .174 53.0 .412 -75.3
1.90 .552 142.0 1.336 36.6 .187 53.7 .411 -78.8
2.00 .556 138.3 1,280 33.6 .199 54.1 .411 -82.3
UPA801T
VCE = 3 V, IC = 1 mA, Z0 = 50 ΩΩ
ΩΩ
Ω
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.10 .967 -22.9 1.935 159.9 .045 74.0 .978 -9.2
0.20 .930 -45.8 1.968 143.1 .083 60.1 .931 -17.4
0.30 .884 -67.1 1.938 129.1 .108 48.9 .870 -23.2
0.40 .842 -86.9 1.827 117.2 .125 39.4 .822 -28.0
0.50 .801 -103.1 1.748 106.7 .134 32.6 .779 -31.9
0.60 .771 -117.0 1.576 97.4 .137 27.1 .749 -35.3
0.70 .742 -130.0 1.498 89.2 .137 22.9 .722 -38.4
0.80 .722 -141.2 1.403 81.9 .134 20.0 .702 -41.3
0.90 .706 -151.1 1.326 75.6 .129 18.5 .690 -44.4
1.00 .696 -159.9 1.242 69.6 .124 17.8 .680 -47.4
1.10 .689 -167.7 1.169 64.5 .118 18.1 .671 -50.4
1.20 .685 -174.9 1.102 59.6 .112 19.8 .666 -53.6
1.30 .681 178.7 1.030 55.3 .106 23.5 .660 -56.9
1.40 .681 172.6 .979 50.9 .103 28.0 .658 -60.4
1.50 .683 166.8 .925 47.2 .100 33.6 .654 -64.0
1.60 .684 161.4 .884 43.6 .102 40.4 .651 -67.6
1.70 .684 156.1 .842 40.4 .107 47.5 .651 -71.5
1.80 .686 151.4 .804 37.3 .115 53.5 .649 -75.1
1.90 .689 146.6 .773 34.6 .127 57.9 .646 -79.2
2.00 .690 142.1 .738 32.3 .141 62.1 .646 -83.0
UPA801T
TYPICAL SCATTERING PARAMETERS (TA = 25°C)
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
VCE = 3 V, IC = 5 mA, Z0 = 50 ΩΩ
ΩΩ
Ω
0.10 .819 -38.9 8.934 148.0 .038 65.8 .868 -23.6
0.20 .701 -73.4 8.007 127.6 .060 53.1 .687 -36.7
0.30 .608 -102.3 6.898 112.6 .072 47.6 .560 -42.4
0.40 .549 -123.6 5.819 101.8 .079 45.2 .483 -45.4
0.50 .511 -139.6 4.970 93.5 .086 45.7 .434 -47.2
0.60 .494 -151.0 4.255 86.9 .093 46.5 .402 -48.6
0.70 .481 -160.8 3.750 81.4 .099 47.2 .379 -49.9
0.80 .475 -168.6 3.328 76.3 .107 48.9 .361 -51.5
0.90 .472 -175.7 3.004 72.0 .113 49.7 .350 -53.4
1.00 .471 178.2 2.734 67.7 .122 50.9 .340 -55.4
1.10 .473 172.8 2.522 64.0 .130 51.6 .332 -57.3
1.20 .474 167.6 2.355 60.2 .139 52.3 .328 59.7
1.30 .474 162.9 2.176 56.7 .148 53.1 .322 -62.3
1.40 .477 158.4 2..038 53.2 .158 53.3 .319 -65.2
1.50 .481 154.4 1.921 49.8 .168 53.7 .315 -68.2
1.60 .484 150.3 1.818 46.7 .177 53.3 .313 -70.9
1.70 .489 146.5 1.726 43.9 .190 53.3 .312 -73.9
1.80 .490 142.9 1.647 40.6 .200 53.0 .312 -77.2
1.90 .495 139.3 1.578 37.6 .212 52.7 .309 -80.8
2.00 .501 136.0 1.505 35.0 .223 52.0 .309 -84.0
VCE = 3 V, IC = 7 mA, Z0 = 50 ΩΩ
ΩΩ
Ω
FREQUENCY S11 S21 S12 S22
(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
0.10 .750 -45.7 11.858 144.0 .035 63.3 .816 -28.5
0.20 .618 -84.9 10.093 122.3 .053 53.2 .609 -41.8
0.30 .528 -114.5 8.219 107.7 .054 50.6 .481 -46.7
0.40 .483 -134.3 6.684 97.9 .073 50.6 .411 -49.1
0.50 .459 -148.5 5.565 90.5 .081 50.7 .365 -50.5
0.60 .447 -158.8 4.737 84.6 .089 52.3 .337 -51.5
0.70 .441 -167.4 4.134 79.7 .098 53.5 .337 -51.5
0.80 .439 -174.4 3.653 75.2 .107 54.2 .300 -54.2
0.90 .437 179.2 3.283 71.1 .117 54.9 .290 -55.9
1.00 .437 173.7 2.978 67.2 .126 55.6 .281 -57.9
1.10 .440 168.6 2.732 63.7 .136 55.8 .275 -59.8
1.20 .443 163.9 2.533 60.0 .147 55.3 .270 -52.3
1.30 .444 159.6 2.357 66.6 .158 55.4 .267 -64.7
1.40 .449 155.5 2.216 53.4 .169 55.3 .264 -67.5
1.50 .450 151.6 2.077 50.3 .180 54.7 .259 -70.5
1.60 .455 147.9 1.972 47.4 .192 64.5 .258 -73.3
1.70 .459 144.3 1.868 44.3 .202 53.9 .256 -76.3
1.80 .462 140.9 1.789 41.3 .214 53.0 .255 -79.6
1.90 .466 137.5 1.702 38.4 .226 52.3 .253 -83.0
2.00 .470 134.4 1.635 36.1 .238 51.5 .253 -86.4
PART NUMBER QUANTITY PACKAGING
UPA801T-T1-A 3000 Tape & Reel
ORDERING INFORMATION
UPA801T
UNITS
Parameter Units
time seconds
capacitance farads
inductance henries
resistance ohms
voltage volts
current amps
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA
Date: 12/98
Note:
This nonlinear model utilized the latest data available.
See our Design Parameter Library at www.cel.com for this data.
NONLINEAR MODEL
(1) Gummel-Poon Model
Parameters Q1, Q2 Parameters Q1, Q2
IS 6e-16 MJC 0.55
BF 120 XCJC 0.3
NF 0.98 CJS 0
VAF 10 VJS 0.75
IKF 0.08 MJS 0
ISE 32e-16 FC 0.5
NE 1.93 TF 12e-12
BR 12 XTF 6
NR 0.991 VTF 10
VAR 3.9 ITF 0.2
IKR 0.17 PTF 0
ISC 0 TR 1e-9
NC 2 EG 1.11
RE 0.38 XTB 0
RB 4.16 XTI 3
RBM 3.6 KF 1.56e-18
IRB 1.96e-4 AF 1.49
RC 2
CJE 2.8e-12
VJE 1.3
MJE 0.5
CJC 1.1e-12
VJC 0.7
BJT NONLINEAR MODEL PARAMETERS (1)
UPA801T
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
99/9
DATA SUBJECT TO CHANGE WITHOUT NOTICE
NONLINEAR MODEL
SCHEMATIC
MODEL RANGE
Frequency: 0.1 to 3.0 GHz
Bias: VCE = 1 V to 5 V, IC = 1 mA to 10 mA
Date: 12/98
Pin_1
Pin_2
Pin_3 Pin_4
Pin_5
Pin_6
0.07 pF
CCEPKG2
CCBPKG2
0.6 nH
0.07 pF
CCE2
CCB2
0.07 pF
CCE1
0.1 pF
0.82 nH
0.6 nH 0.05 nH
0.65 nH
Q1
Q2
CCBPKG1
CCB1
LE1
BL1BL
0.05 nH
LB
0.05 nH
LE
C_B2E2
0.05 pF
C_B1B2
0.05 pF
LB2
LE2
C_C1B2
0.1 pF
LC
0.05 nH
LC
0.05 nH
LE
0.05 nH
C_E1C2
C_C1E1
0.05 pF
0.05 pF
C_E1B2
0.1 pF
0.1 pF
0.06 pF
0.1 pF
