2SK2179 ( F3E50VX2 )VX-2 Series Power MOSFET
Electrical Characteristics Tc = 25
Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 500 V
Zero Gate Voltage Drain Current IDSS VDS = 500V, VGS = 0V 250 ÊA
Gate-Source Leakage Current IGSS VGS = }30V, VDS = 0V }0.1
Forward Tran]conductance gfs ID = 1.5A, VDS = 10V 0.9 2.1 S
Static Drain-Source On-]tate Resistance RDS(ON) ID = 1.5A, VGS = 10V 1.8 2.3 ¶
Gate Threshold Voltage VTH ID = 0.3mA, VDS = 10V 2.5 3.0 3.5 V
Source-Drain Diode Forwade Voltage VSD IS = 1.5A, VGS = 0V 1.5
The\mal Resistance Æjc junction to case 6.25 /L
Total Gate Charge QgVDD = 400V, VGS = 10V, ID =3A 15 nC
Input Capacitance Ciss 400
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ30 pF
Output Capacitance Coss 90
Turn-On Time ton ID = 1. 5A, VGS = 10V, RL = 100¶45 80 ns
Turn-Off Time toff 90 140