EMH4 / UMH4N / IMH4A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 EMT6 UMT6 (6) (6) VCEO IC(MAX.) R1 50V 100mA 10kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH4 (SC-107C) SMT6 UMH4N SOT-353 (SC-88) (4) lFeatures (5) (6) 1) Built-In Biasing Resistors. 2) Two DTC114T chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. (3) (2) (1) IMH4A SOT-457 (SC-74) lInner circuit IMH4A EMH4 / UMH4N Collector (6) Base (5) Emitter (4) Collector (4) Base (5) Emitter (6) (1) Emitter (2) Base (3) Collector (3) Emitter (2) Base (1) Collector lApplication Inverter circuit, Interface circuit, Driver circuit lPackaging specifications Package Package size (mm) Taping code EMH4 EMT6 1616 T2R 180 8 8,000 H4 UMH4N UMT6 2021 TR 180 8 3,000 H4 IMH4A SMT6 2928 T108 180 8 3,000 H4 Part No. www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/6 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Marking 2012.06 - Rev.B Data Sheet EMH4 / UMH4N / IMH4A lAbsolute maximum ratings (Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC(MAX.)*1 100 mA 150 (Total)*3 mW 300 (Total)*4 mW Tj 150 C Tstg -55 to +150 C Collector current Collector Power dissipation EMH4 / UMH4N PD IMH4A Junction temperature Range of storage temperature *2 lElectrical characteristics(Ta = 25C) <For Tr1 and Tr2 in common> Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Min. Typ. Max. Unit IC= 50mA 50 - - V BVCEO IC= 1mA 50 - - V BVEBO IE= 50mA 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 mA Emitter cut-off current IEBO VEB = 4V - - 0.5 mA VCE(sat) IC / IB= 10mA / 1mA - - 0.3 V DC current gain hFE VCE= 5V , IC= 1mA , 100 250 600 - Input resistance R1 - 7 10 13 kW Transition frequency fT *1 VCE = 10V, IE = -5mA, f = 100MHz - 250 - MHz Collector-emitter saturation voltage Conditions *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 2/6 2012.06 - Rev.B Data Sheet EMH4 / UMH4N / IMH4A lElectrical characteristic curves(Ta = 25C) Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics IB= 500A 100 10 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) 450A Ta=25C VCE=5V 1 0.1 Ta=100C 25C -40C 0.01 0.001 400A 350A 80 300A 250A 60 200A 150A 40 100A 20 50A 0A 0 0 0.5 1 1.5 2 0 BASE TO EMITTER VOLTAGE : VBE (V) 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. Collector Current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.3 DC Current gain vs. Collector Current COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 3/6 2012.06 - Rev.B Data Sheet EMH4 / UMH4N / IMH4A lDimensions (Unit : mm) D EMT6 A x c S A Lp Lp HE L E L b A1 y S l1 A e1 e S e b2 Patterm of terminal position areas DIM A1 A b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.00 0.10 0.45 0.55 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 MILIMETERS MIN MAX 1.25 0.37 0.45 INCHES MIN 0 0.018 0.007 0.003 0.059 0.043 MAX 0.004 0.022 0.011 0.007 0.067 0.051 0.02 0.059 0.004 - 0.067 0.012 0.014 0.004 0.004 INCHES MIN MAX 0.049 - 0.015 0.018 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 4/6 2012.06 - Rev.B Data Sheet EMH4 / UMH4N / IMH4A lDimensions (Unit : mm) D A e c x Lp A3 S A e l1 A1 y S e1 A b HE E Q L1 UMT6 S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 MILIMETERS MIN MAX 1.55 0.40 0.65 INCHES MIN 0 MAX 0.039 0.004 0.01 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.03 0.079 0.008 0.01 0.004 - 0.087 0.02 0.022 0.012 0.004 0.004 INCHES MIN MAX 0.06 - 0.016 0.026 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/6 2012.06 - Rev.B Data Sheet EMH4 / UMH4N / IMH4A lDimensions (Unit : mm) SMT6 D A e c L1 Lp HE E Q b A3 x S A y S A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 MILIMETERS MIN MAX 2.10 0.60 0.90 INCHES MIN 0.039 0 MAX 0.051 0.004 0.01 0.01 0.004 0.11 0.059 0.016 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.008 - 0.118 0.024 0.028 0.012 0.008 0.004 INCHES MIN MAX 0.08 - 0.024 0.035 Dimension in mm/inches www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 6/6 2012.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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