Datasheet
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EMH4 / UMH4N / IMH4A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
lFeatures
1) Built-In Biasing Resistors.
2) Two DTC114T chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
lInner circuit
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
3,000
H4
UMH4N
UMT6
2021
TR
180
8
SMT6
2928
T108
180
8
8,000
H4
8
Tape width
(mm)
Basic
ordering
unit (pcs)
Marking
Reel size
(mm)
EMH4
EMT6
1616
T2R
180
3,000
H4
IMH4A
Part No.
Package
Package
size
(mm)
Taping
code
R1
Parameter
VCEO
IC(MAX.)
EMT6
UMT6
SMT6
EMH4
(SC-107C)
IMH4A
SOT-457 (SC-74)
UMH4N
SOT-353 (SC-88)
EMH4 / UMH4N
IMH4A
Collector
(6)
(2)
Base
(1)
Emitter (3)
Collector
Base
(5) Emitter
(4) Collector
(4)
(2)
Base
(3)
Emitter (1)
Collector
Base
(5) Emitter
(6)
(6)
(5)
(4)
(1)
(2)
(3)
(4)
(5)
(6)
(3)
(2)
(1)
(6)
(5)
(4)
(1)
(2)
(3)
1/6
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH4 / UMH4N / IMH4A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector Power dissipation
Junction temperature
Range of storage temperature
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
IC / IB= 10mA / 1mA
DC current gain
hFE
VCE= 5V , IC= 1mA ,
Input resistance
R1
-
Collector-emitter saturation voltage
VCE(sat)
IE= 50mA
Collector cut-off current
ICBO
VCB = 50V
Emitter cut-off current
IEBO
VEB = 4V
Emitter-base breakdown voltage
BVEBO
MHz
-
250
-
Transition frequency
fT *1
VCE = 10V, IE = -5mA,
f = 100MHz
-
7
10
13
kW
100
250
600
mA
-
-
0.3
V
-
-
0.5
V
-
-
0.5
mA
5
-
-
V
Collector-emitter breakdown voltage
BVCEO
IC= 1mA
V
50
-
50
-
-
-
Collector-base breakdown voltage
BVCBO
IC= 50mA
Unit
Min.
Typ.
Max.
Parameter
Symbol
Conditions
Tj
150
°C
Tstg
-55 to +150
°C
IC(MAX.)*1
100
mA
EMH4 / UMH4N
PD *2
150 (Total)*3
mW
IMH4A
300 (Total)*4
mW
VCEO
50
V
VEBO
5
V
Parameter
Symbol
Values
Unit
VCBO
50
V
2/6
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH4 / UMH4N / IMH4A
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Grounded emitter output
characteristics
0
20
40
60
80
100
0 5 10
250μA
0A
300μA
350μA
400μA
450μA
500μA
200μA
150μA
100μA
IB=
Ta=25ºC
50μA
0.001
0.01
0.1
1
10
0 0.5 1 1.5 2
VCE=5V
Ta=100ºC
25
ºC
-40ºC
Fig.1 Grounded emitter propagation
characteristics
COLLECTOR CURRENT : Ic (mA)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR TO EMITTER
VOLTAGE : VCE (V)
Fig.3 DC Current gain
vs. Collector Current
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation voltage
vs. Collector Current
COLLECTOR SATURATION
VOLTAGE : VCE(sat) (V)
COLLECTOR CURRENT : IC (mA)
3/6
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH4 / UMH4N / IMH4A
lDimensions (Unit : mm)
Dimension in mm/inches
EMT6
Patterm of terminal position areas
b
D
e
Lp
Lp
E
HE
LL
x S A
A
c
A1
A
yS
S
e1
b2
l1
e
MIN MAX MIN MAX
A1 0.00 0.10 0 0.004
A 0.45 0.55 0.018 0.022
b 0.17 0.27 0.007 0.011
c 0.08 0.18 0.003 0.007
D 1.50 1.70 0.059 0.067
E 1.10 1.30 0.043 0.051
e
HE1.50 1.70 0.059 0.067
L 0.10 0.30 0.004 0.012
Lp - 0.35 - 0.014
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 - 0.37 - 0.015
l1 - 0.45 - 0.018
INCHES
0.50
0.02
DIM
MILIMETERS
MILIMETERS
INCHES
1.25
0.049
DIM
4/6
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH4 / UMH4N / IMH4A
lDimensions (Unit : mm)
Dimension in mm/inches
UMT6
Patterm of terminal position areas
E
x S A
A
E
H
e
D
b
c
Q
A3
L1
Lp
yS
A1
e1
b2
l1
e
A
S
MIN MAX MIN MAX
A 0.80 1.00 - 0.039
A1 0.00 0.10 0 0.004
A3
b 0.15 0.30 0.006 0.012
c 0.10 0.20 0.004 0.008
D 1.90 2.10 0.075 0.083
E 1.15 1.35 0.045 0.053
e
HE2.00 2.20 0.079 0.087
L1 0.20 0.50 0.008 0.02
Lp 0.25 0.55 0.01 0.022
Q 0.10 0.30 0.004 0.012
x - 0.10 - 0.004
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 - 0.40 - 0.016
l1 - 0.65 - 0.026
0.25
0.01
DIM
MILIMETERS
INCHES
1.55
0.06
DIM
MILIMETERS
INCHES
0.65
0.03
5/6
2012.06 - Rev.B
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© 2012 ROHM Co., Ltd. All rights reserved.
Data Sheet
EMH4 / UMH4N / IMH4A
lDimensions (Unit : mm)
Dimension in mm/inches
SMT6
Patterm of terminal position areas
E
e
D
E
H
bx S A
A
c
Q
A3
L1
Lp
A1
A
S
yS
e1
e
l1
b2
MIN MAX MIN MAX
A 1.00 1.30 0.039 0.051
A1 0.00 0.10 0 0.004
A3
b 0.25 0.40 0.01 0.016
c 0.09 0.25 0.004 0.01
D 2.80 3.00 0.11 0.118
E 1.50 1.80 0.059 0.071
e
HE2.60 3.00 0.102 0.118
L1 0.30 0.60 0.012 0.024
Lp 0.40 0.70 0.016 0.028
Q 0.20 0.30 0.008 0.012
x - 0.20 - 0.008
y - 0.10 - 0.004
MIN MAX MIN MAX
e1
b2 0.60 - 0.024
l1 - 0.90 - 0.035
0.25
0.01
DIM
MILIMETERS
INCHES
2.10
0.08
DIM
MILIMETERS
INCHES
0.95
0.04
6/6
2012.06 - Rev.B
R1120A
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© 2012 ROHM Co., Ltd. All rights reserved.
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