Integrated Oieeis 1) PUD ae Darren ULN2025A/L HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS avoeee em, IECQ MFG. DESC LINE APPROVAL CERTIFICATION Ideally suited for interfacing between low-level logic circuitry and multiple peripheral power loads, the Series ULN2000A/L high-voltage, ULN2000L high-current Darlington arrays feature continuous load current ratings to Oe Nd 600 mA for each of the seven drivers. At an appropriate duty cycle 1 | | >0 | 16 | depending on ambient temperature and number of drivers turned ON simultaneously, typical power loads totaling over 260 W (400 mA x 7, ULN2000A 95 V) can be controlled. Typical loads include relays, solenoids, stepping ABSOLUTE MAXIMUM RATINGS Output Voltage, Vce motors, multiplexed LED and incandescent displays, and heaters. All devices feature open collector outputs with integral clamp diodes. The Series ULN20x1A/L devices are general-purpose arrays which may be used with external input current limiting, or with most PMOS or CMOS logic directly. The Series ULN20x2A/L is intended for use with 14 to 25 V PMOS logic. Each input has a series Zener diode and current limiting resistor. The Zener diode also provides excellent noise immunity for these devices. The Series ULN20x3A/L has series input resistors selected for operation directly with 5 V TTL or CMOS. These devices will handle numerous interface needs particularly those beyond the capabilities of standard logic buffers. The Series ULN20x4A/L features series input resistors for operation directly from 6 to 15 V CMOS or PMOS logic outputs. The Series ULN20x5A/L is designed for use with standard and Schottky TTL where higher output currents are required and loading of the logic output is not a concern. These devices will sink a minimum of 350 mA when driven from a TTL totem pole logic output. The Series ULN200xA/L is the standard Darlington array. The outputs are capable of sinking 500 mA and will withstand at least 50 V in the OFF tULM202x") ULN201XA) ........ og y state. Outputs may be paralleled for higher load current capability. The inputVoltage, Vin Series ULN201xA devices are similar except that they will sink 600 mA. (ULN20X2, X3, X4) .......000.. 30 V The Series ULN202xA/L will withstand 95 V in the OFF state. (ULN20X5") ...... 0.22. eee 15 V These Darlington arrays are furnished in 16-pin dual in-line plastic Continuous Output Current, Ic packages (suffix A) and 16-lead surface-mountable SOICs (suffix L). All ULN201XA) Dorris Oe ma devices are pinned with outputs opposite inputs to facilitate ease of circuit Continuous Input Current, lin ...... 25 mA board layout. Power Dissipation, Pp RE (one Darlington pair) .......... 1.0 W FEATU Ss (total package) ......... See Graph @ TTL, DTL, MOS, or CMOS Compatible Inputs Operating Temperature 20C to 485C @ Output Current to 600 mA Storage Temperature HI Output Voltage to 95 V Range, Ts ......-- -55C to +150C Hi Transient-Protected Outputs Note that the ULN2000A series (dual in-line package) and:!ULN2000L series (small-outline IC package) are electrically identical and share a common pin number assignment Mi Dual In-Line Plastic Package or Small-Outline IC Package x = digit to identify specific device. Characteristic shown applies to family of devices with remaining digits as shown. SPRAGUE SEMICONDUCTOR GROUP |SERIES ULN2000A/L HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS Device Number Designation PARTIAL SCHEMATICS Vv 50V 50 V 95 V ULN20X1* (Each Driver) cea) pee cum l(maxy 500 mA 600 mA 500 mA Logic Part Number General Purpose . * PMOS, CMOS ULN2001 ULN2011A ULN2021 14-25 V . . PMOS ULN2002 ULN2012A ULN2022 Sv ULN2003* ULN2013A ULN2023* TTL, CMOS ULN20X2* (Each Driver) 6-15 V ; ; pio com CMOS, PMOS ULN2004 ULN2014A ULN2024 V0 105K | a ! Hotere ULN2005* ULN2015A ULN2025* ALLOWABLE AVERAGE PACKAGE POWER DISSIPATION 2.5 w - f= <q = = = O 2.0 - a a SUFFIX A, R gy, = 60C/W 2 O15 ULN20X4* (Each Driver) oc p+ocOm = 10, 5K | og oO o ! | c x ws 1.0 Pp 7.2K | 3K \ OD} s PN bese eeeeeeeecees: de ---p--- x oO < 20.5 Ww SUFFIX'L, Roy, = 110C/W J ULN20X5* (Each Driver) a = oO pa _ <x 0 25 50 75 100 125 150 AMBIENT TEMPERATURE IN C Dwg. GP-006 *Compiete part number includes a final letter to indicate package (A = DIP,L = SOIC) / X = Digit to identify specific device. Specification shown applies to family of devices with remaining digits as shown. 115 Northeast Cutoff, Box 15036 2 Worcester, Massachusetts 01615-0036 (508) 853-5000 Copyright 1988 Sprague Electric Company, April, 1988SERIES ULN2000A/L THIGI-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS TEST FIGURES om ee omnes om mene OPEN cex 1. 's = ve le + FIGUREIA + FIGURE 1B J 1 tL . FIGURE2 SERIES ULN2000A/L ELECTRICAL CHARACTERISTICS AT + 25C (unless otherwise noted) Test Applicable Limits Characteristic Symbol Fig. Devices Test Conditions Min. Typ. Max.| Units Output Leakage Current | Icex 1A All Voce = 50V, Ta = 25C 50 pA Voce = 50V, Ta = 70C _ 100 pA 1B ULN2002* Voce = 50V, Ta = 70C, Vin = 6.0V _ 500 pA ULN2004* Voce = 50V, Ta = 70C, Vin = 1.0V _ 500 pA Collector-Emitter VocE(saT) 2 Ic = 100 mA, Ip = 250 nA og 1.1 Vv Saturation Voltage All Ic = 200 mA, Ig = 350 pA 1.1 #13 Vv Ic = 350 mA, Ip = 500,pA 13 16 Vv Input Current lin (ON) 3 ULN2002* Vin =17V 082 1.25 mA ULN2003* Vin = 3.85 V 0.93 1.35 mA ULN2004* Vin = 5.0V 035 05 mA Vin = 12V 10 1.45 mA ULN2005* Vin = 3.0 V 15 24 mA lIN(OFF) 4 All Ic = 500 pA, Ta = 70C 50 6 pA Input Voltage Vin(on) 5 ULN2002* Voce = 2.0V, Ic = 300mA - 13 Vv Voce = 2.0V, Io = 200mMA - 24 Vv ULN2003* Voce = 2.0V, Io = 250mMA - 27 Vv Voce = 2.0V, Io = 300mMA - 3.0 Vv Voce = 2.0V, Io = 125mA 5.0 Vv ULN2004* Voce = 2.0V, Ico = 200 mA 60 V Voce = 2.0V, Io = 275mA - 7.0 Vv Voce = 2.0V, Io = 350mA 8.0 Vv ULN2005* Vce = 2.0V, ic = 350mA - 24 Vv D-C Forward Current hee 2 ULN2001* Voce = 2.0V, Io = 350mA 1000 Transfer Ratio Input Capacitance Cin All 15 25 pF Turn-On Delay teLH 8 All 0.5E,, to 0.5 Eout 0.25 1.0 ps Turn-Off Delay teu 8 All 0.5E,, to 0.5 Eou 0.25 1.0 LS Clamp Diode In 6 All Vr = 50V,T,a = 25C 50 pA Leakage Current Ve = 50V, Ta = 70C _ 100 pA Clamp Diode Ve 7 All Ir = 350mA . 1.7 20 Vv Forward Voltage *Complete part number includes suffix to identify package style: A = DIP,L = SOIC. SEMICONDUCTOR GROUP 3SERIES ULN2000A/L HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS TEST FIGURES ore ce ores Yin = vin 'c Veg FIGURE 3 t 4 t FIGURE 5 SERIES ULN2010A ELECTRICAL CHARACTERISTICS AT 25C (unless otherwise noted) Test Applicable Limits Characteristic Symbol Fig. Devices Test Conditions Min. Typ. Max.| Units Output Leakage Current | Icex 1A All Vce = 50V, Ta = 25C 650 pA Voce = 50V, Ta = 70C _ 100 pA 1B ULN2012A | Vce = 50V, Ta = 70C, Vin = 6.0V _ 500 pA ULN2014A Voce = 50V, Ta = 70C, Vin = 1.0V _ 500 pA Collector-Emitter Vce(SAT) 2 All Ic = 200 mA, Ip = 350 pA 11 1.3 Vv Saturation Voltage I = 350 mA, Ip = 500 pA 13 1.6 Vv Ic = 500 MA, Ip = 600 pA 17 19 Vv Input Current lin (ON) 3 ULN2012A Vin =17V 0.82 1.25 mA ULN2013A | Vin = 3.85 V 0.93 1.35 mA ULN2014A | Vin =5.0V 035 0.5 mA Vin = 12V 1.0 1.45 mA ULN2015A Vin = 3.0V 15 24 mA HiN(OFF) 4 All Ic = 500 pA, Ta = 70C 50 6 pA Input Voltage VIN(ON) 5 ULN2012A_ | Vce = 2.0V, Ico = 500mA - 17 Vv ULN2013A_) | Vce = 2.0V, Ico = 250mA - 27 Vv Voce = 2.0V, Io = 300mA - 3.0 Vv Voe = 2.0V, lo = 500 mA - 35 Vv ULN2014A | Vce = 2.0V, Io = 275mMA - 7.0 Vv Voce = 2.0V, Io = 350mMA - 80 Vv Vee = 2.0V, Io = 500 mA - 95 Vv ULN2015A Vee = 2.0V, Ilo = 500 mA - 26 Vv D-C Forward Current Nee 2 ULN2011A Vce = 2.0V, Ilo = 350mA 1000 Transfer Ratio Vee = 2.0 V, Io = 500mA 900 -'- Input Capacitance Cin All 15 25 pF Turn-On Delay ton 8 All 0.5E,, to 0.5 Eout 0.25 1.0 ps Turn-Off Delay torr 8 All 0.5E,, to 0.5 Eout 0.25 1.0 ps Clamp Diode IR 6 All Vea = 50V,T, = 26C 650 pA Leakage Current Ve = 50V,T, = 70C _ 100 pA Clamp Diode VE 7 All le = 350mA 17 2.0 Vv Forward Voltage Ir = 500mA 21 25 Vv 4 SPRAGUE 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 (508) 853-5000SERIES ULN2000A/L HIGH-VOLTAGE, HIGH-CURRENT DARLING TON ARRAYS TEST FIGURES FIGURE 6 IS. OPEN | FIGURE 8 INPUT 50% 50% ULN20X1* ULN20X2" ULN20Xx3* in ULN20X4* $0% ULN20X5" Vin 3.5V 13V 3.5V 12V 3.5V Complete part number includes a final letter to indicate package. Digit to identify specific device. Specification shown applies to family of devices with remaining digits FIGURE 7 as shown. SERIES ULN2020A/L ELECTRICAL CHARACTERISTICS AT + 25C (unless otherwise noted) Test Applicable Limits Characteristic Symbol Fig. Devices Test Conditions Min. Typ. Max.;| Units Output Leakage Current | Icex 1A All Voce = 50V, Ta = 25C 50 pA Voce = 50V, Ta = 70C _ 100 pA 1B ULN2022* Voce = 50V, Ta = 70C, Vin = 6.0V _ 500 pA ULN2024* Vee = 50V,T,s = 70C, Vin = 1.0V _ 00 pA Collector-Emitter VcE(SAT) 2 All lo = 100mA, lg = 250 pA og 1.1 Vv Saturation Voltage lo = 200 mA, Ig = 350 pA 11 #13 Vv Ico = 350 mA, Ig = 500 pA 13 16 Vv Input Current lin (ON) 3 ULN2022* Vin =17V 0.82 1.25 mA ULN2023* Vin = 3.85V 0.93 1.35 mA ULN2024* Vin = 5.0V 035 05 mA Vin=12V 1.0 1.45 mA ULN2025* Vin = 3.0V 15 24 mA lin(OFF) 4 All Ic = 500 pA, Ta = 70C 50 65 pA Input Voltage Vincon) 5 ULN2022* Voce = 2.0V, lo = 300MA - 13 V Voe = 2.0V, lo = 200 mA - 24 Vv ULN2023* Vee = 2.0V, Io = 250mA - 27 Vv Vee = 2.0V, Io = 300 mA - 3.0 Vv Vee = 2.0V, Io = 125mMA 5.0 Vv ULN2024* Vee = 2.0V, Ilo = 200 mA - 6.0 Vv Vee = 2.0V, Io = 275mA - 7.0 Vv Vce = 2.0V, Io = 350mA 8.0 Vv ULN2025* Vce = 2.0V, Io = 350mA - 24 Vv D-C Forward Current Nee 2 ULN2021* Vee = 2.0V, Io = 350mA 4000 Transfer Ratio Input Capacitance Cin _ All 15 25 pF Turn-On Delay teLH 8 All 0.5E,,to0.5 Eout 0.25 1.0 LS Turn-Off Delay teHL 8 All 0.5E,,to0.5 Eout 0.25 1.0 LS Clamp Diode IR 6 All Va = 50V,T, = 25C 650 pA Leakage Current Ve = 50V,Ta = 70C _ 100 pA Clamp Diode Ve 7 All lp = 350mA 17 2.0 V Forward Voltage *Complete part number includes suffix to identify package style: A = DIP, L = SOIC. SEMICONDUCTOR GROUPSERIES ULEN2000A/L HIGHI-VOL TAGE, THIGH-CURRENT DARLING TON ARRAYS PEAK COLLECTOR CURRENT TYPICAL APPLICATIONS AS A FUNCTION OF DUTY CYCLE (Dual In-line Packaged Devices) ULN-20028 600 V55 +V 5 PEAK COLLECTOR CURRENT IN mA AT +70C ND 8 CONDUCTING P OUTPUT So 20 40 60 80 100 PER CENT DUTY CYCLE OWG. No. A-9652 Dwg.No. A-97528 (Small Outline Packaged Devices) ULN-2004A o *Vop +V 2 600 oi <z ce 400 : 3 p 200 uw NUMBER OF OUTPUTS 2N4901 3 CONDUCTING SIMULTANEOUSLY i I 0wG. NO, &-9654a 0 20 40 60 80 100 PER CENT DUTY CYCLE | cmos 4 OUTPUT COLLECTOR CURRENT AS A FUNCTION OF INPUT CURRENT COLLECTOR CURRENT AS A 600 FUNCTION OF INPUT CURRENT 600 v 4 a o z 400 a 5 z 400 fp 5 g f | 3 7 5 200 5 o XK a % 200 7 0 3 a : HA 0 0.5 <7 1.0 1.5 20 0 Wy MINPUT CUMENT 0 200 400 600 COLLECTOR-EMITTER SATURATION VOLTAGE IN VOLTS No. Ad Ow. No. A-STSAC INPUT CURRENT IN pA wg, No. A-10.8728 SPRAGUE 115 Northeast Cutoff, Box 15036 6 Worcester, Massachusetts 01615-0036 (508) 853-5000SERIES ULN2000A/L TYPICAL APPLICATIONS ULN-2003/5A- +V +*Vcc LAMP - TTL TEST OUTPUT + OWG. WO, &-96594 ULN-2003A DwG. WO. A-10, 175 TTL OUTPUT SERIES ULN2005A/L BE 3.0 < \ Z25 A = x \ \ < + E x > 20 x \ _- ~~, z eG 21.5 = 2 e NX) 2 1.0 We Zz NY vw L? AREA OF NORMAL 0.5 a. OPERATION WITH vo STANDARD OR 7 SCHOTTKY TTL 90 1.5 2.0 2.5 3.0 3.5 4.0 INPUT VOLTAGE = Viny INPUT CURRENT AS A FUNCTION OF INPUT VOLTAGE SERIES ULN2002A/L INPUT CURRENT IN mA - Ihny HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS SERIES ULN2003A/L INPUT CURRENT IN mA = liny SERIES ULN2004A/L INPUT CURRENT IN mA - lyn 2.0 Lo ] - 1.5 aa =e chem wen 1.0 a ae on" i o 0.3 1. r 0 12 14 16 18 20 22 24 26 INPUT VOLTAGE - Vinj OWG. NO. 4-97574 7.5 2.0 LL a wis o* 1.5 4 * NCS be ase" 1,0 of 0.5 AREA OF NORMAL OPERATION WITH STANDARD OR 0 SCHOTTKY TTL 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6,0 INPUT VOLTAGE - VIN, sie ug. ccgvsen 2.0 1.5 mats a 1.0 ae nn wyricd oT aw oa 0.5 eT ne =e ba 0 5 7? 8 9 10 i 12 INPUT VOLTAGE - Ving uWa. NO. A-OB99A SEMICONDUCTOR GROUPSERIES ULN2000A/L HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS PLASTIC SOIC DIMENSIONS IN INCHES (BASED ON Il mm = 0.03937") PLASTIC DIP DIMENSIONS IN INCHES 1 ing AAR AAAs P if Z 7 0.050 Y 0016 INDEX AREA HUW UY coo HUY RUE Gl oo6s fl fates 0.050 : 6.0138 b Bec seller To 8 0.035 D 0.100 + 0.010 r- 0.200 MAX. SEATING PLANE SEATING PLANE NOTE 1 + oop L A-13, 6481N _ 0.0040 MIN A-13, 6421N -+|}2022 0.100 MIN 0.015 A Seated Height 0.0532/0.0688 C Lead Thickness 0.0075/0.0098 0.015 MIN. D Body Length 0.735/0.785 0 Body Length 0.3859/0.3937 E, Body Width 0.240/0.260 E Body Width 0.1497/0.1574 ay Row Spacing 0.300 BSC H Overall Width 0.2284/0.2440 s Lead CL to End 0.025 REF DIMENSIONS IN MILLIMETERS DIMENSIONS IN MILLIMETERS (BASED ON 1 = 25.40 mm) 16 16 AR FAA 1 | E Hq fr 127 TH PEE 4 9.40 INDEX AREA JHE 0.49 _Inl2 3 L127 . 4 T.65 A La h-S 035 Tt Wage eee TO 8* + O89 | D FS 25420.25 D Des Ne snaee 5.08 MAX. SEATING PLANE ; SEATING PLANE NOTE 1 hev-dlerad 4 0.10 MIN. A-13, 642MM 0.58 0.38 2.54 MIN A Seated Height 1.35/1.75 Cc Lead Thickness 0.19/C.25 0.38 MIN. D Body Length 18.67/19.93 D Body Length 9.80/10.0 E, Body Width 6.10/6.60 E Body Width 3.80/4.00 e, Row Spacing 7.62 BSC H Overall Width 5.80/6.20 Lead CL to End 0.64 REF In the construction of the components described, the full intent 1. Leads 1, 8, 9, and 16 may be half-leads at vendor's option. of the specification will be met. The Sprague Electric Company, however, reserves the right to make, from time to time, such departures from the detail specifications as may be required to permit improvements in the design of its products. Components made under military approvals will be in accordance with the approval requirements. The information included herein is believed to be accurate and reliable. However, the Sprague Electric Company assumes no responsibility for its use; nor for any infringements of patents or other rights of third parties which may result from its use. A. Dimensions shown as ____ / ____. are Min./Max. B. Lead thickness is measured at seating plane or below. C. Lead spacing tolerance is non-cumulative. D. Exact body and lead configuration at vendor's option within limits shown. E. Lead gauge plane is 0.030 (7.62 mm) max. below seating plane. . SPRAGUE 115 Northeast Cutoff, Box 15036 Worcester, Massachusetts 01615-0036 008590 ve _ (508) 853-5000