GaAs Hall Element
•Absolute Maximum Ratings
•Electrical Characteristics(Ta=25˚C)
•Dimensional Drawing (mm)
Power Dissipation(mW)
38
•Characteristic Curves
Allowable Package Power Dissipation
(PD
–
Ta)
14080 100 1206040200
0
40
80
120
160
200
HG-106A
•High-stability GaAs Hall element.
•Ultra mini-mold SMT package.
•Shipped in packet-tape reel (4000pcs per reel).
Item
Symbol
Limit Unit
Vin
8 V
Max. Input Voltage
PD
150 mW
Max. Power Dissipation
Topr.
–40 to +125 ˚C
Operating Temp. Range
Tstg.
–40 to +150 ˚C
Storage Temp. Range
Temp. Coefficient of VH
Item Conditions Min. UnitTyp.
Input Resistance B=0T, Ic=0.1mA 450 750
Output Hall Voltage
B=0.1T, Vc=6V 150 mV190
Output Resistance
B=0T, Ic=0.1mA 1,000 2,000
25˚C to 125˚C %/˚C-0.06
Linearity of output
Hall voltage
B=0.1/0.5T, Ic=0.5mA
K%2
Temp. Coefficient of Rin
B=0T, Ic=0.1mA %/˚C0.3
Offset Voltage B=0T, Vc=6V –16 mV+16
Max.
Pinning
1(±) 3
(±)
Input
2(±) 4
(±)
Output
4
32
1
0.250.35
3˚
5˚
0.6±0.05
0.3 0.3
0.3
1.5±0.1
0.9
2.5±0.2
1.5±0.1
N
5˚
3˚
0 to 0.1
0.1
VH
Rin
Rout
Vos
VH
Rin
Symbol
Notes : 1. VH = VHM – Vos (VHM:meter indication)
2. VH = X X 100
3. Rin = X X 100
4. = X 100
Rin (T1)
1(T2 – T1)
VH (T2) – VH (T1)
(T2 – T1)
Rin (T2) – Rin (T1)
VH (T1)
1
Ambient Temperature.(˚C)
K[K (B1) + K (B2)] / 2
K (B1) – K (B2)
IC • B
VH
T1 = 25˚C, T2 = 125˚C
K =
B1 = 0.5T, B2 = 0.1T
Note : It is requested to read and accept "IMPORTANT NOTICE".
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
39
b
c
g
j
100 150500–50
250
200
150
100
50
0
Ic
Vin
150-50 0 50 100
8
7
6
5
4
3
2
1
0
Ic
Vin
600
500
400
300
200
100
00 100 200 300
Ic
Vin,
0
50
100
150
200
250
0 2 4 6 8 10
Ic
Vin
0 2 4 6 8 10
15
10
5
0
Ic
Vin
800
700
600
500
400
300
200
100
0100 1500 50–50
VH-B
VH-Vc, VH-Ic
VH-T
Vos-Vc, Vos-Ic
Vos-T
*Magnetic Flux Density
1(mT)=10(G)
Rin-T
Ambient Temperature(˚C) Magnetic Flux Density B (mT)
Ambient Temperature(˚C)
Ambient Temperature(˚C)
Output Voltage:VH(mV)Offset Voltage:Vos(mV)
Ic (mA) Input Current
Vc (V) Input Voltage
Ic (mA) Input Current
Vc (V) Input Voltage
Ic:(mA)
Vc:(V)
Ic:(mA)
V
c
:(V)
B = 0.1 (T)
Ta = 25 (˚C)
Ic const
Vc const
B = 0 (mT)
Ta = 25 (˚C)
Ic const
Vc const
Output Voltage:VH(mV)Output Voltage:VH(mV)Offset Voltage:Vos(mV)
Ic const
Vc const
Ic = 10 (mA)
Vc = 6 (V)
B = 0.1 (T)
Ic = 10 (mA)
Vc = 6 (V)
B = 6 (mT)
Ic const
Vc const
Ic = 10 (mA)
Vc = 6 (V)
Ta = 25 (˚C)
Ic const
Vc const
In This Example : Rin=600( ), Vos=6.3(mV), Vc=6(V)
HG-106A
Input Resistance:Rin( )
