PD - 96929 IRG4BC30FD-S Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. VCE(on) typ. = 1.59V G @VGE = 15V, IC = 17A E n-channel Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's. D2Pak Absolute Maximum Ratings Max. Units VCES Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25C Continuous Collector Current 31 IC @ TC = 100C ICM Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) ILM Clamped Inductive Load current IF @ TC = 100C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 120 VGE Gate-to-Emitter Voltage 20 V PD @ TC = 25C Maximum Power Dissipation 100 W d 17 c 120 PD @ TC = 100C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range A 120 42 -55 to +150 C Thermal / Mechanical Characteristics Min. Typ. Max. Units RJC Junction-to-Case- IGBT Parameter --- --- 1.2 C/W RCS Case-to-Sink, flat, greased surface --- 0.50 --- g RJA Junction-to-Ambient (PCB Mounted,steady state) --- --- 40 Wt Weight --- 2.0 (0.07) --- www.irf.com g (oz.) 1 12/02/04 IRG4BC30FD-S Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage e V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Voltage Min. Typ. Max. Units 600 -- -- -- 0.69 -- -- 1.59 1.8 -- 1.99 -- -- 1.7 -- VGE(th) Gate Threshold Voltage 3.0 -- 6.0 VGE(th)/TJ Threshold Voltage temp. coefficient -- -11 -- gfe ICES Forward Transconductance Zero Gate Voltage Collector Current 6.1 10 -- -- -- 250 -- -- 2500 -- 1.4 1.7 -- 1.3 1.6 -- -- 100 VFM f Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 250A V/C VGE = 0V, IC = 1mA IC = 17A V VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150C V VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 17A A VGE = 0V, VCE = 600V V IF = 12A VGE = 0V, VCE = 600V, TJ = 150C See Fig. 13 IF = 12A, TJ = 150C nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) Min. Typ. Max. Units -- 51 Conditions IC = 17A 77 VCC = 400V Qge Gate-to-Emitter Charge (turn-on) -- 7.9 12 Qgc Gate-to-Collector Charge (turn-on) -- 19 28 td(on) Turn-On delay time -- 42 -- tr Rise time -- 26 -- td(off) Turn-Off delay time -- 230 350 VGE = 15V, RG = 23 tf Fall time -- 160 230 Energy losses inlcude "tail" and Eon Turn-On Switching Loss -- 0.63 -- Eoff Turn-Off Switching Loss -- 1.39 -- Ets Total Switching Loss -- 2.02 3.9 td(on) Turn-On delay time -- 42 -- tr Rise time -- 27 -- nC See Fig. 8 VGE = 15V TJ = 25C ns IC = 17A, VCC = 480V diode reverse recovery. mJ See Fig. 9, 10, 11, 18 TJ = 150C ns See Fig. 9,10,11,18 IC = 17A, VCC = 480V td(off) Turn-Off delay time -- 310 -- VGE = 15V, RG = 23 tf Fall time -- 310 -- Energy losses inlcude "tail" and Ets Total Switching Loss -- 3.2 -- mJ diode reverse recovery. LE Internal Emitter Inductance -- 7.5 -- nH Cies Input Capacitance -- 1100 -- Measured 5mm from package VGE = 0V -- pF VCC = 30V Coes Output Capacitance -- 74 Cres Reverse Transfer Capacitance -- 14 -- trr Diode Reverse Recovery Time -- 42 60 -- 80 120 6.0 Irr Diode Peak Reverse Recovery Current -- 3.5 -- 5.6 10 Qrr Diode Reverse Recovery Charge -- 80 180 220 600 di(rec)M/dt Diode Peak Rate of Fall of Recovery -- 180 -- During tb -- 120 -- 2 See Fig. 7 f = 1.0MHz ns TJ = 25C TJ = 125C A TJ = 25C TJ = 125C nC TJ = 25C TJ = 125C A/s TJ = 25C TJ = 125C See Fig. 14 IF = 12A See Fig. 15 VR = 200V See Fig. 16 di/dt 200A/s See Fig. 17 www.irf.com IRG4BC30FD-S www.irf.com 3 IRG4BC30FD-S 4 www.irf.com IRG4BC30FD-S www.irf.com 5 IRG4BC30FD-S 6 www.irf.com IRG4BC30FD-S www.irf.com 7 IRG4BC30FD-S 90% Vge Same type device as D.U.T. +Vge Vce 430F 80% of Vce D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1+5S Vce icIcdtdt Vce t1 t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Ic Qrr = DUT VOLTAGE AND CURRENT Vce 10% Ic 90% Ic tr td(on) Ipk Vpk 10% Irr Vcc Irr Ic DIODE RECOVERY WAVEFORMS 5% Vce t1 t2 Eon = Vce VceieIcdt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 +Vg tx 10% Vcc Vcc trr id Ic dtdt tx t4 Erec = Vd VdidIcdt dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC30FD-S Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig.18e - Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 0 - 480V 480V 4 X IC @25C 50V 6000F 100V Fig. 19 - Clamped Inductive Load Test Circuit www.irf.com Fig. 20 - Pulsed Collector Current Test Circuit 9 IRG4BC30FD-S D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(/ ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 )6 '$7(&2'( <($5 :((. /,1(/ 25 ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 10 3$57180%(5 )6 '$7(&2'( 3 '(6,*1$7(6/($')5(( 352'8&7237,21$/ <($5 :((. $ $66(0%/<6,7(&2'( www.irf.com IRG4BC30FD-S D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20). VCC=80%(VCES), VGE=20V, L=10H, RG = 23 (figure 19). Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. When mounted on 1" square PCB (FR-4 or G-10 Material). Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/