VUO 55 IdAVM = 58 A VRRM = 1200-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 1200 1400 1600 1800 1200 1400 1600 1800 + + Type VUO 55-12NO7 VUO 55-14NO7 VUO 55-16NO7 VUO 55-18NO7* - ~ * delivery time on request Symbol Test Conditions IdAVM TC = 85C, module IFSM TVJ = 45C; VR = 0 - ~ ~ ~ Maximum Ratings ~ ~ Features Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873 I2t 58 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 750 820 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2820 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2300 A2s A2s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ 5 15 % 44 15 % 3 15 % 26 15 % Nm lb.in. Nm lb.in. 260 g VISOL 50/60 Hz, RMS IISOL 1 mA Md Mounting torque (M5) t = 1 min t=1s Terminal connection torque (M5) Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Weight typ. Symbol Test Conditions IR VR = VRRM; VR = VRRM; TVJ = 25C TVJ = TVJM 0.3 10.0 mA mA VF IF TVJ = 25C 1.6 V VT0 rT For power-loss calculations only 0.85 8 V mW RthJC per diode; DC current per module per diode; DC current per module 2.7 0.45 3.06 0.51 K/W K/W K/W K/W RthJH TVJ TVJM Tstg = 150 A; Dimensions in mm (1 mm = 0.0394") Characteristic Values Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-2 http://store.iiic.cc/ VUO 55 I2t Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 I2t versus time (1-10 ms) per diode Fig. 5 Maximum forward current at case temperature Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 2 3 4 0.036 0.149 0.615 1.9 0.013 0.034 1.35 23.0 Constants for ZthJK calculation: i Rthi (K/W) ti (s) 1 2 3 4 5 0.036 0.149 0.615 1.9 0.36 0.013 0.034 1.35 23.0 52.0 Fig. 6 Transient thermal impedance per diode (c) 2000 IXYS All rights reserved 2-2 http://store.iiic.cc/