AFT21S220W02SR3 AFT21S220W02GSR3
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 50 W RF power LDMOS transistors are designed for cellular base
station applications requiring very wide instantaneous bandwidth capability
covering the frequency range of 2110 to 2170 MHz.
Typical Single--Carrier W--CDMA Performance: VDD =28Vdc,
IDQ = 1200 mA, Pout = 50 W Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 18.9 29.8 7.2 –34.0 –18
2140 MHz 19.1 29.3 7.1 –34.0 –25
2170 MHz 19.2 28.9 7.0 –34.0 –17
Features
Designed for Wide Instantaneous Bandwidth Applications
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Able to Withstand Extremely High Output VSWR and Broadband Operating
Conditions
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13--inch Reel.
Document Number: AFT21S220W02S
Rev. 0, 2/2014
Freescale Semiconductor
Technical Data
2110–2170 MHz, 50 W AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFT21S220W02SR3
AFT21S220W02GSR3
Figure 1. Pin Connections
NI--780S--2L
AFT21S220W02SR3
NI--780GS--2L
AFT21S220W02GSR3
(Top View)
RFin/VGS 21
RFout/VDS
Freescale Semiconductor, Inc., 2014.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +65 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 32, +0 Vdc
Storage Temperature Range Tstg –65 to +150 C
Case Operating Temperature Range TC–40 to +125 C
Operating Junction Temperature Range (1,2) TJ–40 to +225 C
CW Operation @ TC=25C
Derate above 25C
CW 92
0.41
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 91C, 50 W CW, 28 Vdc, IDQ = 1200 mA, 2140 MHz
RJC 0.56 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =65Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =28Vdc,V
GS =0Vdc)
IDSS — — 5 Adc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 300 Adc)
VGS(th) 0.8 1.2 1.6 Vdc
Gate Quiescent Voltage
(VDD =28Vdc,I
D= 1200 mAdc, Measured in Functional Test)
VGS(Q) 1.4 1.8 2.2 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=3.0Adc)
VDS(on) 0.1 0.15 0.3 Vdc
Functional Tests (4,5) (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1200 mA, Pout = 50 W Avg., f = 2140 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ 5MHzOffset.
Power Gain Gps 18.1 19.1 21.1 dB
Drain Efficiency D26.0 29.3 — %
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF PAR 6.6 7.1 —dB
Adjacent Channel Power Ratio ACPR —–34.0 –32.0 dBc
Input Return Loss IRL —–25 –12 dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
5. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GS) parts.
(continued)
AFT21S220W02SR3 AFT21S220W02GSR3
3
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Load Mismatch (In Freescale Test Fixture, 50 ohm system) IDQ = 1200 mA, f = 2140 MHz, 120 sec Pulse Width, 10% Duty Cycle
VSWR 10:1 at 30 Vdc, 250 W Pulse Output Power
(3 dB Input Overdrive from 180 W Pulse Rated Power)
No Device Degradation
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD =28Vdc,I
DQ = 1200 mA, 2110–2170 MHz Bandwidth
Pout @ 1 dB Compression Point, 120 sec Pulse Width, 10% Duty
Cycle
P1dB —209 — W
AM/PM
(Maximum value measured at the P3dB compression point across
the 2110–2170 MHz bandwidth)
—–18 —
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres —80 —MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =50WAvg. GF—0.3 —dB
Gain Variation over Temperature @ 166 W CW
(–30Cto+85C)
G — 0.02 —dB/C
Output Power Variation over Temperature @ 166 W CW
(–30Cto+85C) (1)
P1dB —0.01 —dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
*C1, C11, C12, C15 and C16 are mounted vertically.
C1* C2
C7 VGG
VGG
VDD
C3
C4
R1
C8
R2
C5
C6
C10
C11*
C12*
C15* C16*
C9 C17
C13
C14
C18
D57394
AFT21S220W02S
Rev. 2
Figure 2. AFT21S220W02SR3 Test Circuit Component Layout
CUT OUT AREA
Table 5. AFT21S220W02SR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1,C4,C6,C11,C12,C16 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC
C2 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC
C3, C5 0.1 F Chip Capacitors C1206C104K1RACTU Kemet
C7, C8, C9, C10, C13, C14 10 F Chip Capacitors GRM32ER61H106KA12L Murata
C15 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C17, C18 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26-RH Multicomp
R1, R2 4.75 , 1/4 W Chip Resistors CRCW12064R75FNEA Vishay
PCB Rogers RO4350B, 0.020,r=3.66 D57394 MTL
AFT21S220W02SR3 AFT21S220W02GSR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
2060
ACPR
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ Pout = 50 Watts Avg.
-- 2 5
-- 5
-- 1 0
-- 1 5
-- 2 0
18
20
19.8
19.6
-- 3 5
32
31
30
29
--32.5
-- 3 3
--33.5
-- 3 4
D, DRAIN
EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
18.2
2080 2100 2120 2140 2160 2180 2200 2220
28
--34.5
-- 3 0
ACPR (dBc)
PARC
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
-- 7 5
0
-- 1 5
-- 3 0
-- 6 0
1 300
IMD, INTERMODULATION DISTORTION (dBc)
-- 4 5
IM7--L
Figure 5. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
-- 1
-- 3
30
0
-- 2
-- 4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20 40 50 70
15
45
40
35
30
25
20
DDRAIN EFFICIENCY (%)
-- 3 d B = 5 6 W
60
D
ACPR
PARC
ACPR (dBc)
-- 4 5
-- 1 5
-- 2 0
-- 2 5
-- 3 5
-- 3 0
-- 4 0
19.6
Gps, POWER GAIN (dB)
19.4
19.2
19
18.8
18.6
18.4
Gps
-- 1 d B = 3 1 W -- 2 d B = 4 2 W
PARC (dB)
-- 3 . 2
-- 2 . 4
-- 2 . 6
-- 2 . 8
-- 3
-- 3 . 4
-- 5
Gps
IM3--L
1VDD =28Vdc,I
DQ = 1200 mA, f = 2140 MHz
Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
VDD =28Vdc,P
out = 184 W (PEP)
IDQ = 1200 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
100
IM5--L
IM7--U
IM3--U
IM5--U
Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF
IRL
VDD =28Vdc,P
out =50W(Avg.)
IDQ = 1200 mA, Single--Carrier W--CDMA
3.84 MHz Channel Bandwidth
200
6
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
TYPICAL CHARACTERISTICS
1
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
-- 1 0
-- 2 0
10
22
0
60
50
40
30
20
D, DRAIN EFFICIENCY (%)
D
Gps, POWER GAIN (dB)
20
18
10 100 300
10
-- 6 0
ACPR (dBc)
16
14
12
0
-- 3 0
-- 4 0
-- 5 0
Figure 7. Broadband Frequency Response
8
20
f, FREQUENCY (MHz)
VDD =28Vdc
Pin =0dBm
IDQ = 1200 mA
16
14
12
GAIN (dB)
18
10
1800 1900 2000 2100 2200 2300 2400 2500 2600
-- 3 5
25
15
5
-- 5
-- 1 5
IRL (dB)
-- 2 5
Gain
IRL
2110 MHz
2140 MHz
2170 MHz
VDD =28Vdc,I
DQ = 1200 mA, Single--Carrier W--CDMA,
3.84 MHz Channel Bandwidth Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
2110 MHz
2140 MHz 2170 MHz
200
AFT21S220W02SR3 AFT21S220W02GSR3
7
RF Device Data
Freescale Semiconductor, Inc.
Table 6. Load Pull Performance — Maximum Power Tuning
VDD =28Vdc,I
DQ = 1260 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.03 - j5.49 3.14 + j5.71 3.09 - j5.64 18.8 54.2 264 50.3 -12
2140 3.62 - j5.77 4.06 + j5.98 3.37 - j5.73 18.8 54.1 255 49.0 -12
2170 4.75 - j5.91 5.19 + j5.97 3.49 - j5.61 19.0 54.0 253 49.5 -13
f
(MHz)
Zsource
()
Zin
()
Max Output Power
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.03 - j5.49 3.35 + j5.99 3.70 - j6.29 16.6 55.1 322 51.8 -17
2140 3.62 - j5.77 4.42 + j6.26 3.88 - j6.19 16.6 55.0 314 51.0 -18
2170 4.75 - j5.91 5.69 + j6.11 4.28 - j6.16 16.6 54.9 310 50.7 -18
(1) Load impedance for optimum P1dB power.
(2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Table 7. Load Pull Performance — Maximum Drain Efficiency Tuning
VDD =28Vdc,I
DQ = 1260 mA,Pulsed CW, 10 sec(on), 10% Duty Cycle
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P1dB
Zload (1)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.03 - j5.49 3.17 + j5.81 2.97 - j3.19 20.7 52.9 196 59.1 -18
2140 3.62 - j5.77 4.19 + j6.13 2.59 - j3.06 20.7 52.6 183 58.3 -21
2170 4.75 - j5.91 5.36 + j5.92 2.76 - j3.04 20.8 52.6 183 58.6 -20
f
(MHz)
Zsource
()
Zin
()
Max Drain Efficiency
P3dB
Zload (2)
()Gain (dB) (dBm) (W)
D
(%)
AM/PM
()
2110 3.03 - j5.49 3.32 + j6.09 3.03 - j3.22 18.7 53.7 233 61.4 -27
2140 3.62 - j5.77 4.46 + j6.38 2.64 - j3.06 18.7 53.3 215 60.3 -29
2170 4.75 - j5.91 5.78 + j6.11 2.85 - j3.15 18.7 53.5 222 60.5 -28
(1) Load impedance for optimum P1dB efficiency.
(2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground.
Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull
Tuner and Test
Circuit
Device
Under
Test
Zsource Zin Zload
Output Load Pull
Tuner and Test
Circuit
8
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5 5
46
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5 5
46
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5 5
46
-- 1
IMAGINARY ()
REAL ()
Figure 8. P1dB Load Pull Output Power Contours (dBm) Figure 9. P1dB Load Pull Efficiency Contours (%)
REAL ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
Figure 10. P1dB Load Pull Gain Contours (dB)
REAL ()
Figure 11. P1dB Load Pull AM/PM Contours ()
REAL ()
46
58 56
54 52
50 48
19.5
20
19
18.5
18
20.5
-- 2 4
-- 2 2 -- 2 0 -- 1 8
-- 1 6
-- 1 4
-- 1 2
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
42 44
21
17.5
17
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5 5
46
-- 1
P
E
P
E
P
E
P
E
50.5
53.5
53
52.5
51 51.5 52
54
50
53.5
53
52.5
52
AFT21S220W02SR3 AFT21S220W02GSR3
9
RF Device Data
Freescale Semiconductor, Inc.
P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5 5
46
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5 5
46
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5 5
46
-- 1
-- 9
-- 3
33.5
2
-- 2
-- 4
-- 5
5.5
-- 6
2.5
-- 7
-- 8
4.5 5
46
-- 1
Figure 12. P3dB Load Pull Output Power Contours (dBm) Figure 13. P3dB Load Pull Efficiency Contours (%)
REAL ()
NOTE: = Maximum Output Power
= Maximum Drain Efficiency
P
E
Gain
Drain Efficiency
Linearity
Output Power
REAL ()
IMAGINARY ()
Figure 14. P3dB Load Pull Gain Contours (dB)
REAL ()
Figure 15. P3dB Load Pull AM/PM Contours ()
REAL ()
54.5
54
51.5 52
48
60
58 56
54 52
50
46
15.5
15
19 18.5
18
17.5
17
16.5
-- 2 6 -- 2 4
-- 2 2
-- 2 0
-- 1 8
-- 1 6
IMAGINARY ()
IMAGINARY ()
IMAGINARY ()
52.5
53.5
53
44
16
-- 2 8
-- 3 0
-- 3 2
P
E
P
E
P
E
P
E
52
52
-- 1 8
54
53.5
53
10
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
PACKAGE DIMENSIONS
AFT21S220W02SR3 AFT21S220W02GSR3
11
RF Device Data
Freescale Semiconductor, Inc.
12
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
AFT21S220W02SR3 AFT21S220W02GSR3
13
RF Device Data
Freescale Semiconductor, Inc.
14
RF Device Data
Freescale Semiconductor, Inc.
AFT21S220W02SR3 AFT21S220W02GSR3
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Feb. 2014 Initial Release of Data Sheet
AFT21S220W02SR3 AFT21S220W02GSR3
15
RF Device Data
Freescale Semiconductor, Inc.
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