User's Guide
SLUUB11–April 2014
TPS23785BEVM-522 Evaluation Module
This user’s guide describes the TPS23785B evaluation module (TPS23785BEVM-522). TPS23785BEVM-
522 contains evaluation and reference circuitry for the TPS23785B. The TPS23785B device is an IEEE
802.3 compliant, powered-device (PD) controller and power supply controller optimized for non-isolated
converter topologies. TPS23785BEVM-522 is targeted at a high-efficiency 5.87-W PD solution.
Contents
1 Introduction ................................................................................................................... 2
2 Electrical Specifications..................................................................................................... 2
3 Description.................................................................................................................... 3
4 Schematic..................................................................................................................... 4
5 General Configuration and Description ................................................................................... 5
6 TPS23785BEVM-522 Performance Data................................................................................. 7
7 EVM Assembly Drawing and Layout Guidelines....................................................................... 10
8 Bill of Materials ............................................................................................................. 14
List of Figures
1 TPS23785BEVM-522 Schematic.......................................................................................... 4
2 Typical TPS23785BEVM-522 Test Setup ................................................................................ 6
3 Startup Response to Full Load for a 48-V Input......................................................................... 7
4 Transient Response of 5-V Output from 58 to 580 mA for a 48-V Input ............................................. 7
5 Transient Response of 3.3-V Output from 90 to 900 mA for a 48-V Input........................................... 8
6 Top Side Component Placement......................................................................................... 10
7 Top Side Routing........................................................................................................... 10
8 Layer 2 Routing............................................................................................................. 11
9 Layer 3 Routing............................................................................................................. 11
10 Bottom Side Routing....................................................................................................... 12
11 Bottom Component Placement........................................................................................... 12
List of Tables
1 TPS23785BEVM-522 Electrical and Performance Specifications at 25°C........................................... 2
2 Connector Functionality..................................................................................................... 5
3 Test Points.................................................................................................................... 5
4 Efficiency of the TPS23785BEVM-522.................................................................................... 9
5 TPS23785BEVM-522 BOM .............................................................................................. 14
1
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Introduction
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1 Introduction
The TPS23785BEVM-522 evaluation module (EVM) is a fully assembled and tested circuit for evaluating
the TPS23785B high-power, high-efficiency power over Ethernet (PoE) PD and DC-to-DC controller. The
TPS23785B is connected to a dual output non-isolated flyback converter capable of outputting 5 V at 580
mA and 3.3 V at 900 mA. The TPS23785B is compliant with the IEEE802.3at PoE standard. The EVM
contains header connectors for easy connection to external test and application circuitry.
1.1 Features
• Class 2 PoE applications
• Operates from PoE or auxiliary adapters
• Dual output non-isolated flyback converter (5 V at 580 mA, 3.3 V at 900 mA)
1.2 Applications
• Video and VoIP telephones
• RFID readers
• Security – wired IP cameras
• Wireless access points
2 Electrical Specifications
Table 1. TPS23785BEVM-522 Electrical and Performance Specifications at 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER INTERFACE
Applied to the power pins of connector J1 0 57 V
Input voltage Applied to the power pins of connector J4 34 57 V
Rising input voltage 36.1 V
Input UVLO, POE input J1 Falling input voltage 29.14 V
Detection voltage At device terminals 3 10 V
Classification voltage At device terminals 13 21 V
Classification current Rclass = 137 Ω17.6 19.4 mA
Inrush current-limit 100 180 mA
Operating current-limit 850 1100 mA
DC/DC CONVERTER
Output voltage (5 V) VIN = 48 V, ILOAD ≤ILOAD (max) 4.98 4.94 V
Output voltage (3.3 V) VIN = 48 V, ILOAD ≤ILOAD (max) 3.311 3.310 V
Output current (5 V) 34 V ≤VIN ≤57 V 580 mA
Output current (3.3 V) 34 V ≤VIN ≤57 V 900 mA
Switching frequency 250 kHz
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Description
3 Description
TPS23785BEVM-522 enables full evaluation of the TPS23785B device. Refer to the schematic in
Section 4. Ethernet power is applied from J1 connects to the PoE transformer T1 needed to transfer
power/data. Power goes through bridge rectifier; the RC circuits C1, R5, C2, and R6 help balance the
Ethernet cable impedance and are critical for ESD and EMI/EMC performance. At the output of the diode
bridge is the EMI/EMC filter and transient protection for the TPS23785B.
Input power can also be applied at J4 from a DC source when power at J1 is not present or when the DC-
to-DC converter is being evaluated and not the PoE front end.
The TPS23785B (U1) PD and DCDC converter circuitry is shown in Section 4. R33 provides the detection
signature and R11 provides the classification (class 2) signature. The switched side of the PD controller is
located to the right of U1. The TPS23785B RTN pin provides inrush limited turn on and charge of the bulk
capacitor C12.
The DC-to-DC converter is a non-isolated high-efficiency dual-output synchronous flyback converter. The
primary (Q3) switching MOSFET is driven from U1 GATE pin and the secondary (Q5 and Q6) switching
MOSFET is driven from U1 GATE2 pin.
Output voltage feedback is provided with U2. R20 provides a means for error injection to measure the
frequency response of the converter. This feedback circuit drives the U1 CTL pin which provides a voltage
proportional to the output load current. As the output load current decreases, the CTL pin voltage
decreases.
3
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ETHERNET
POWER
6.49W MAX
DATA
PORT
AUX INPUT
34 to 57 VDC
VSS
PGND
AUX
PGND
GND
3.3 V/900 mA
GND
5 V/580 mA
F = 250 kHz
APD Start = 36 V
Blnk = 100 ns
Delay = 20 ns
VB
VC
PGND
PGND
3_3V
VB
3_3V
3_3V
PGND
PGND
PGND
PGND
PGND
PGND
3_3V
TP12
TP2
TP16
TP8TP9
TP10
TP15
TP6
TP5
TP7
5 V
3.3 V
PGND
PGND
T2P_PU
CTL GAT2
GATE
CS
VC
PGND
VSS
TP1
VDD
TP13
SDRN2
TP11
SDRN1
TP3
PDRN
4
7,8
1,2,3
5,6,
Q6
CSD17507Q5A
1
2
3
J3
4
3
5,6
Q2A
FDS89161
2
1
7,8
Q2B
FDS89161
D15 D14
232 kΩ
R29
232 kΩ
R30
1.0 MΩ
R8
1.0 MΩ
R10
330 pF
C29
330 pF
C30
VDD
D13 D12
4
3
5, 6
Q1A
FDS89161
2
1
7, 8 Q1B
FDS89161
D11 D4
232 kΩ
R4
232 kΩ
R7
1.0 MΩ
R2
1.0 MΩ
R3
330 pF
C27
330 pF
C28
D2 D1
75.0 Ω
R5
75.0 Ω
R6
TP4
2
3
4
1
5
6
7
8
J1 2
3
4
1
5
6
7
8
J2
1
2
J4
1
2
J5
1
2
J6
1000 pF
C4
1 µF
C8
1 µF
C18
0.1 µF
C9
0.1 µF
C19
0.1 µF
C24
10 µF
C7
10 µF
C17
100 µF
C5
100 µF
C6
100 µF
C15
100 µF
C16
1000pF
C3
30 Ω
FB1
30 Ω
FB2
30 Ω
FB3
30 Ω
FB4
200 V
D3
ES1D-13-F
200 V
D8
ES1D-13-F
D6
MMSD4148T1G
D5
MMSD4148T1G
D9
BAT54HT1G
3
4
5
NC
1NC
2
U2
TLV431AIDBV
150 V
Q3
FDC86244
D7
MMSD4148T1G
10 Ω
R19
10.0 kΩ
R1
10.0k
R23
10 Ω
R16
10 Ω
R13
10.0k
R24
0.1 µF
100 V
C14
2.2 µF
100 V
C13
22 µF
100 V
C12
20 Ω
0.125 W
R34
22 µF
25 V
C11
10 Ω
R14
1000 pF
C10
10 Ω
R18
330 pF
C20
10pF
C21
4700pF
C22
0.022µF
C23
0
R20
511k
R28
59.0k
R25
6.04k
R27
49.9k
R31
150k
R26
825 Ω
R21
0.82 Ω
0.125 W
R22
100 kΩ
0.125 W
R17
Q4
MMBT3904
L1
LPS4012-103MLB
1
2
3
6
7
89
10
11
14
15
16
1:1
1:1
T1
H2019FNLT
Q5
IRLML0030TRPBF
1
2
6
5
9
7
10
8
3
4
T2
LDT0565-50
P1
1
P2
2
CTL
3
VB 4
CS 5
COM 6
GATE 7
VC 8
GAT2 9
ARTN 10
RTN 11
VSS
12
VDD1
13
VDD
14
DEN
15
N/C 16
CLS
17
DT
18
APD
19
BLNK
20
FRS
21
T2P 22
N/C 23
N/C 24
PAD
U1
TPS23785BPWP
0.1 µF
100 V
C26
VSS
D10
SMAJ58A
3.01 kΩ
R35
PGND
AUX 68.1 kΩ
R32
VDD 26.7 kΩ
R33
69.8 kΩ
R12
137 Ω
R11
10.0 kΩ
R9
TP14
100 kΩ
R15
1 µF
25 V
C25
VC
PGND
CS
CS
GATE
GATE
VC
VB
VDD
3300 pF
C1
3300 pF
C2
Schematic
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4 Schematic
Figure 1. TPS23785BEVM-522 Schematic
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General Configuration and Description
5 General Configuration and Description
5.1 Physical Access
Table 2 lists the EVM connector functionality and Table 3 describes the test point availability.
Table 2. Connector Functionality
Connector Label Description
J1 PWR+DATA PoE input. Connect to PSE power and data source.
J2 DATA Ethernet data passthrough. Connect to downstream Ethernet device.
J3 T2P Indicated PSE has performed IEEE802.3at type 2 hardware classification.
DC-to-DC converter input bypassing the PoE front end. Connect a 34- to 57-V DC power
J4 AUX INPUT supply if there is no J1 connection to power the converter.
J5 5V VOUT 5-V regulated output
J6 3.3V VOUT 3.3-V regulated output
Table 3. Test Points
Test Point Color Label Description
TP1 RED VDD Input voltage
TP2 RED 5V 5-V regulated output
TP3 ORANGE PDRN Main FET drain voltage
TP4, TP7, TP14 BLACK PGND Converter ground
TP5 WHITE CS Current sense voltage
TP6 WHITE GATE Main gate voltage
TP8 WHITE GAT2 Synchronous gate voltage
TP9 WHITE CTL Control voltage
TP10 WHITE T2P_PU T2P pullup voltage
TP11 ORANGE SDRN1 5-V synchronous FET source voltage
TP12 RED VC Converter bias voltage
TP13 ORANGE SDRN2 3.3-V synchronous FET drain voltage
TP15 ORANGE 3.3V 3.3-V regulated output
TP16 BLACK VSS PoE input return voltage
5
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TPS23785BEVM-522
J1 J5
J4
PSE Ethernet Cable
+±
5 V
GND
Ethernet
Device
J6
3.3 V
GND
DC Supply
(If no PSE)
General Configuration and Description
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5.2 Test Setup
Figure 2 shows the typical test setup for the EVM.
Figure 2. Typical TPS23785BEVM-522 Test Setup
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TPS23785BEVM-522 Performance Data
6 TPS23785BEVM-522 Performance Data
6.1 Startup
Figure 3 shows the startup response of the TPS23785BEVM-522.
Figure 3. Startup Response to Full Load for a 48-V Input
6.2 Transient Response
Figure 4 and Figure 5 show the transient response of the TPS23785BEVM-522.
Figure 4. Transient Response of 5-V Output from 58 to 580 mA for a 48-V Input
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TPS23785BEVM-522 Performance Data
6.3 Efficiency
Table 4 shows the efficiency of the TPS23785BEVM-522
Table 4. Efficiency of the TPS23785BEVM-522
Vin Pin Efficiency Efficiency
Iout 3.3 V Iout 5 V Vout 3.3 Vout 5 V Pout Vin (PoE) Iin Pin PoE
(Converter) Converter PoE Converter
1.021 0.601 3.315 4.96 6.365575 48 47.3 0.146 7.008 6.9058 90.8% 92.2%
1.021 0.283 3.315 4.981 4.794238 48 47.4 0.109 5.232 5.1666 91.6% 92.8%
1.02 0 3.315 5.002 3.3813 48 47.4 0.079 3.792 3.7446 89.2% 90.3%
0.465 0.595 3.315 4.949 4.48613 48 47.5 0.103 4.944 4.8925 90.7% 91.7%
0.465 0.281 3.315 4.972 2.938607 48 47.4 0.069 3.312 3.2706 88.7% 89.8%
0.465 0 3.315 4.993 1.541475 48 47.5 0.039 1.872 1.8525 82.3% 83.2%
0 0.592 3.315 4.942 2.925664 48 47.4 0.069 3.312 3.2706 88.3% 89.5%
0 0.281 3.316 4.965 1.395165 48 47.5 0.036 1.728 1.71 80.7% 81.6%
Vin Pin Efficiency Efficiency
Iout 3.3V Iout 5V Vout 3.3 Vout 5V Pout Vin (PoE) Iin Pin PoE
(Converter) Converter PoE Converter
1.026 0.601 3.315 4.953 6.377943 36 35.22 0.199 7.164 7.00878 89.0% 91.0%
1.025 0.287 3.315 4.98 4.827135 36 35.32 0.148 5.328 5.22736 90.6% 92.3%
1.027 0 3.315 5.004 3.404505 36 35.4 0.105 3.78 3.717 90.1% 91.6%
0.466 0.612 3.315 4.941 4.568682 36 35.33 0.141 5.076 4.98153 90.0% 91.7%
0.466 0.286 3.315 4.968 2.965638 36 35.43 0.092 3.312 3.25956 89.5% 91.0%
0.466 0 3.315 4.994 1.54479 36 35.53 0.051 1.836 1.81203 84.1% 85.3%
0 0.616 3.315 4.932 3.038112 36 35.43 0.093 3.348 3.29499 90.7% 92.2%
0 0.281 3.315 4.96 1.39376 36 35.54 0.047 1.692 1.67038 82.4% 83.4%
Vin Pin Efficiency Efficiency
Iout 3.3V Iout 5V Vout 3.3 Vout 5V Pout Vin (PoE) Iin Pin PoE
(Converter) Converter PoE Converter
1.023 0.614 3.315 4.961 6.437299 57 56.4 0.123 7.011 6.9372 91.8% 92.8%
1.024 0.287 3.315 4.982 4.824394 57 56.4 0.093 5.301 5.2452 91.0% 92.0%
1.022 0 3.315 5.002 3.38793 57 56.5 0.067 3.819 3.7855 88.7% 89.5%
0.465 0.63 3.315 4.95 4.659975 57 56.4 0.09 5.13 5.076 90.8% 91.8%
0.466 0.279 3.315 4.974 2.932536 57 56.5 0.058 3.306 3.277 88.7% 89.5%
0.466 0 3.315 4.992 1.54479 57 56.6 0.034 1.938 1.9244 79.7% 80.3%
0 0.635 3.315 4.943 3.138805 57 56.5 0.062 3.534 3.503 88.8% 89.6%
0 0.277 3.315 4.966 1.375582 57 56.6 0.03 1.71 1.698 80.4% 81.0%
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EVM Assembly Drawing and Layout Guidelines
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7 EVM Assembly Drawing and Layout Guidelines
7.1 PCB Drawings
Figure 6 to Figure 11 show component placement and layout of the TPS23785BEVM-522.
Figure 6. Top Side Component Placement
Figure 7. Top Side Routing
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EVM Assembly Drawing and Layout Guidelines
7.2 Layout Guidelines
The layout of the PoE front end should follow power and EMI/ESD best-practice guidelines. A basic set of
recommendations include:
• Parts placement must be driven by power flow in a point-to-point manner: RJ-45, Ethernet transformer,
diode bridges, TVS and 0.1-μF capacitor, and TPS23785B converter input bulk capacitor.
• Make all leads as short as possible with wide power traces and paired signal and return.
• No crossovers of signals from one part of the flow to another are allowed.
• Place the TPS23785B over split, local ground planes referenced to VSS for the PoE input and to RTN
for the converter. Whereas the PoE side may operate without a ground plane, the converter side must
have one. Do not place logic ground and power layers under the Ethernet input.
• Use large copper fills and traces on SMT power-dissipating devices, and use wide traces or overlay
copper fills in the power path.
The DC-to-DC converter layout benefits from basic recommendations such as:
• Pair signals to reduce emissions and noise, especially the paths that carry high-current pulses, which
include the power semiconductors and magnetics.
• Minimize trace length of high current, power semiconductors, and magnetic components.
• Where possible, use vertical pairing
• Use the ground plane for the switching currents carefully.
• Keep the high-current and high-voltage switching away from low-level sensing circuits including those
outside the power supply.
7.3 EMI Containment
• Use compact loops for dv/dt and di/dt circuit paths (power loops and gate drives).
• Use minimal, yet thermally adequate, copper areas for heat sinking of components tied to switching
nodes (minimize exposed radiating surface).
• Use copper ground planes (possible stitching) and top-layer copper floods (surround circuitry with
ground floods).
• Use a 4-layer PCB, if economically feasible (for better grounding).
• Minimize the amount of copper area associated with input traces (to minimize radiated pickup).
• Hide copper associated with switching nodes under shielded magnetics, where possible.
• Heat sink the quiet side of components instead of the switching side, where possible (like the output
side of inductor).
• Use Bob Smith terminations.
• Use LC filter at DC-to-DC input.
• Dampen high-frequency ringing on all switching nodes, if present (allow for possible snubbers).
• Control rise times with gate-drive resistors and possibly snubbers.
• Switching frequency considerations
• Observe the polarity dot on inductors (embed noisy end)
• Use of ferrite beads on input (allow for possible use of beads or 0-Ωresistors).
• Maintain physical separation between input-related circuitry and power circuitry (use ferrite beads as
boundary line).
• Balance efficiency versus acceptable noise margin.
• Possible use of common-mode inductors
• Possible use of integrated RJ-45 jacks (shielded with internal transformer and Bob Smith terminations)
• End-product enclosure considerations (shielding)
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Bill of Materials
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8 Bill of Materials
Table 5. TPS23785BEVM-522 BOM(1)
Alternate
Package Alternate
Designator Qty Value Description Part Number Manufacturer Part
Reference Manufacturer
Number
!PCB1 1 Printed Circuit Board PWR522 Any – –
CAP, CERM, 3300pF, 06031C332JAT2
C1, C2 2 3300pF 0603 AVX
100V, ±5%, X7R, 0603 A
CAP, CERM, 1000pF, 06031C102JAT2
C3, C4 2 1000pF 0603 AVX
100V, ±5%, X7R, 0603 A
C5, C6, C15, CAP, CERM, 100uF, 6.3V, C1210C107M9PA
4 100uF 1210 Kemet
C16 ±20%, X5R, 1210 CTU
CAP, CERM, 10uF, 10V, C0805C106K8PA
C7, C17 2 10uF 0805 Kemet
±10%, X5R, 0805 CTU
CAP, CERM, 1uF, 10V, C0603C105K8PA
C8, C18 2 1uF 0603 Kemet
±10%, X5R, 0603 CTU
CAP, CERM, 0.1uF, 50V, 06035C104KAT2
C9, C19, C24 3 0.1uF 0603 AVX
±10%, X7R, 0603 A
CAP, CERM, 1000pF, 50V, C1608X7R1H102
C10 1 1000pF 0603 TDK
±10%, X7R, 0603 K
CAP, AL, 22uF, 25V, ±20%, SMT
C11 1 22uF EEE-FK1E220R Panasonic
0.7 ohm, SMD Radial C
CAP, AL, 22uF, 100V, SMT
C12 1 22uF EEE-FK2A220P Panasonic
±20%, 1.3 ohm, SMD Radial F
CAP, CERM, 2.2uF, 100V, GRM32ER72A22
C13 1 2.2uF 1210 MuRata
±10%, X7R, 1210 5KA35L
CAP, CERM, 0.1uF, 100V, C2012X7R2A104
C14, C26 2 0.1uF 0805 TDK
±10%, X7R, 0805 K
CAP, CERM, 330pF, 100V, 06031C331JAT2
C20 1 330pF 0603 AVX
±5%, X7R, 0603 A
CAP, CERM, 10pF, 50V, 06035A100JAT2
C21 1 10pF 0603 AVX
±5%, C0G/NP0, 0603 A
CAP, CERM, 4700pF, 06031C472JAT2
C22 1 4700pF 0603 AVX
100V, ±5%, X7R, 0603 A
0.022u CAP, CERM, 0.022uF, 25V, C0603C223K3RA
C23 1 0603 Kemet
F ±10%, X7R, 0603 CTU
CAP, CERM, 1uF, 25V, C2012X5R1E105
C25 1 1uF 0805 TDK
±10%, X5R, 0805 K
C27, C28, CAP, CERM, 330pF, 100V, 06031C331KAT2
4 330pF 0603 AVX – –
C29, C30 ±10%, X7R, 0603 A
D1, D2, D4,
D11, D12, Diode, Schottky, 100V, 1A,
8 0.79V SMA B1100-13-F Diodes Inc. Equivalent Any
D13, D14, SMA
D15 Diode, Ultrafast, 200V, 1A,
D3, D8 2 200V SMA ES1D-13-F Diodes Inc.
SMA
Diode, Switching, 100V, ON
D5, D6, D7 3 100V SOD-123 MMSD4148T1G
0.2A, SOD-123 Semiconductor
Diode, Schottky, 30V, 0.2A, ON
D9 1 30V SOD-323 BAT54HT1G
SOD-323 Semiconductor
Diode, TVS, Uni, 58V,
D10 1 58V SMA SMAJ58A Littelfuse
400W, SMA
FB1, FB2, 1.5A Ferrite Bead, 30 ohm
4 30 ohm 0805 MMZ2012R300A TDK
FB3, FB4 at 100MHz, SMD
RJ-45, Right Angle, No RJ-45
J1, J2 2 1-406541-1 AMP
LED, tab up Jack
(1) Unless otherwise noted in the Alternate PartNumber and/or Alternate Manufacturer columns, all parts may be substituted with
equivalents.
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Bill of Materials
Table 5. TPS23785BEVM-522 BOM(1) (continued)
Alternate
Package Alternate
Designator Qty Value Description Part Number Manufacturer Part
Reference Manufacturer
Number
Header, TH, 100mil, 1x3, Sullins
PBC03SA
J3 1 1x3 Gold plated, 230 mil above PBC03SAAN Connector Equivalent Any
AN
insulator Solutions
On-Shore
Terminal Block, 6A, 3.5mm 7.0x8.2x6.
J4, J5, J6 3 ED555/2DS Technology,
Pitch, 2-Pos, TH 5mm Inc.
Inductor, Shielded Drum LPS4012-
L1 1 10uH Core, Ferrite, 10uH, 0.75A, LPS4012 Coilcraft
103MLB
0.35 ohm, SMD
Q1, Q2 2 Dual N-Channel MOSFET SO-8 FDS89161 Fairchild
MOSFET, N-CH, 150V, SuperSOT Fairchild
Q3 1 150V FDC86244 None
2.3A, SuperSOT-6 -6 Semiconductor
Transistor, NPN, 40V, 0.2A, Fairchild
Q4 1 0.2V SOT-23 MMBT3904
SOT-23 Semiconductor
MOSFET, N-CH, 30V, IRLML0030TRPB International
Q5 1 30V SOT-23 None
5.3A, SOT-23 F Rectifier
MOSFET, N-CH, 30V, 65A, SON Texas
Q6 1 30V CSD17507Q5A None None
SON 5x6mm 5x6mm Instruments
R1, R9, R23, RES, 10.0k ohm, 1%, CRCW060310K0
4 10.0k 0603 Vishay-Dale
R24 0.1W, 0603 FKEA
R2, R3, R8, RES, 1.0Meg ohm, 5%, CRCW06031M00
4 1.0Meg 0603 Vishay-Dale
R10 0.1W, 0603 JNEA
R4, R7, R29, RES, 232k ohm, 1%, 0.1W, CRCW0603232K
4 232k 0603 Vishay-Dale
R30 0603 FKEA
RES, 75.0 ohm, 1%, 0.1W, CRCW060375R0
R5, R6 2 75.0 0603 Vishay-Dale Equivalent Any
0603 FKEA
RES, 137 ohm, 1%, 0.1W, CRCW0603137R
R11 1 137 0603 Vishay-Dale
0603 FKEA
RES, 69.8k ohm, 1%, CRCW060369K8
R12 1 69.8k 0603 Vishay-Dale
0.1W, 0603 FKEA
R13, R16, RES, 10 ohm, 5%, 0.1W, CRCW060310R0
3 10 0603 Vishay-Dale
R19 0603 JNEA
RES, 10 ohm, 5%, 0.125W, CRCW080510R0
R14, R18 2 10 0805 Vishay-Dale
0805 JNEA
RES, 100k ohm, 1%, 0.1W, CRCW0603100K
R15 1 100k 0603 Vishay-Dale Equivalent Any
0603 FKEA
RES, 100k ohm, 1%, CRCW0805100K
R17 1 100k 0805 Vishay-Dale
0.125W, 0805 FKEA
RES, 0 ohm, 5%, 0.1W,
R20 1 0 0603 ERJ-3GEY0R00V Panasonic
0603
RES, 825 ohm, 1%, 0.1W, CRCW0603825R
R21 1 825 0603 Vishay-Dale
0603 FKEA
RES, 0.82 ohm, 1%,
R22 1 0.82 0805 ERJ-6RQFR82V Panasonic
0.125W, 0805
RES, 59.0k ohm, 1%, CRCW060359K0
R25 1 59.0k 0603 Vishay-Dale
0.1W, 0603 FKEA
RES, 150k ohm, 1%, 0.1W, CRCW0603150K
R26 1 150k 0603 Vishay-Dale
0603 FKEA
RES, 6.04k ohm, 1%, CRCW06036K04
R27 1 6.04k 0603 Vishay-Dale
0.1W, 0603 FKEA
RES, 511k ohm, 1%, 0.1W, CRCW0603511K
R28 1 511k 0603 Vishay-Dale
0603 FKEA
RES, 49.9k ohm, 1%, CRCW060349K9
R31 1 49.9k 0603 Vishay-Dale
0.1W, 0603 FKEA
15
SLUUB11–April 2014 TPS23785BEVM-522 Evaluation Module
Submit Documentation Feedback Copyright © 2014, Texas Instruments Incorporated
Bill of Materials
www.ti.com
Table 5. TPS23785BEVM-522 BOM(1) (continued)
Alternate
Package Alternate
Designator Qty Value Description Part Number Manufacturer Part
Reference Manufacturer
Number
RES, 68.1k ohm, 1%, CRCW060368K1
R32 1 68.1k 0603 Vishay-Dale
0.1W, 0603 FKEA
RES, 26.7k ohm, 1%, CRCW080526K7
R33 1 26.7k 0805 Vishay-Dale
0.125W, 0805 FKEA
RES, 20 ohm, 5%, 0.125W, CRCW080520R0
R34 1 20 0805 Vishay-Dale
0805 JNEA
RES, 3.01k ohm, 1%, CRCW06033K01
R35 1 3.01k 0603 Vishay-Dale
0.1W, 0603 FKEA
358x236x5 Pulse
T1 1 350uH Transformer, 350uH, SMT H2019FNLT
00mil Engineering
Linkcom
Driver Transformer, 240uH, 13.1x13x1
T2 1 240uH LDT0565-50 Manufacturing
SMT 4mm Co.
TP1, TP2, Test Point, TH, Keystone5
3 Red 5010 Keystone Equivalent Any
TP12 Multipurpose, Red 010
TP3, TP11, Test Point, TH, Keystone5
4 Orange 5013 Keystone Equivalent Any
TP13, TP15 Multipurpose, Orange 013
TP4, TP7, Test Point, TH, Keystone5
4 Black 5011 Keystone Equivalent Any
TP14, TP16 Multipurpose, Black 011
TP5, TP6, Test Point, TH, Keystone5
TP8, TP9, 5 White 5012 Keystone Equivalent Any
Multipurpose, White 012
TP10 High-Power, High-Efficiency PWP0024 Texas
U1 1 PoE PD and DC-to-DC TPS23785BPWP None
B Instruments
Controller, PWP0024B
LOW-VOLTAGE
ADJUSTABLE PRECISION DBV0005 Texas
U2 1 TLV431AIDBV None
SHUNT REGULATOR, A Instruments
DBV0005A
FID1, FID2, Fiducial mark. There is
0 Fiducial N/A N/A
FID3 nothing to buy or mount.
16 TPS23785BEVM-522 Evaluation Module SLUUB11–April 2014
Submit Documentation Feedback
Copyright © 2014, Texas Instruments Incorporated
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