JJB SERIES – DETECTOR SWITCHES
2331378-1 Rev A
06/2018
Dimensions in
millimetres unless
otherwise specified
Dimensions Shown for
reference purposes only.
Specifications subject to
change
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Applying force to the center of
the stem for 2.65±0.2mm
(0.120±.008in.)
Measure contact resistance with a
micro-Ohmmeter while gradually
applying force to the top of the stem.
Record distance when switch changes
state.
0.15mm Min.
(0.006in. Min.)
Apply vertical static load of 300gF
(2.94N) for 15 seconds and 1kgF (9.8N)
horizontal static load for 15 seconds.
As shown in items 2 through
7 above.
1) Shall be free from
pronounced backlash and
falling-off or breakage
terminals
2) As shown in items 4 and 5
above
3) Contact Resistance: 1Ω
Max.
4) Insulation Resistance:
MΩ Mi.
Test per Method 201A of MIL-STD-202F
1) Swing distance=1.5mm
2) Frequency: 10-55-10Hz in 1-
min/cycle.
3) Direction: 3 vertical directions
including the directions of operation
4) Test time: 2 hours each direction
1) As shown in items 4 to 7.
2) Contact Resistance: 1Ω
Max.
3) Insulation Resistance:
MΩ Mi.
Test per Method 213B Condition A of
MIL-STD-202F
1) Acceleration; 50G
2) Action time:11±1m seconds
3) Testing Direction: 6 sides
4) Test Cycle: 3 times in each direction
1) As shown in items 4 to 7.
2) Contact Resistance: 1Ω
Max.
3) Insulation Resistance:
MΩ Mi.
Tested as follows:
1) 100mA,5 VDC resistive load
2) Apply a static load in the direction of
operation equal to the operating force
to the center of the stem.
3) Rate of Operation: 20 to 25
operations per minute.
4) Cycle of Operation: 80,000 cycles
min.
1) As shown in items 4 to 5
2) Operating force: ±50% of
initial force.
3) Contact Resistance: 1Ω
Max.
4) Insulation Resistance:
MΩ Mi.
5) Bounce: 20 m seconds
Max.