2010-04-09
BFP410
1
1
2
3
4
NPN Silicon RF Transistor
• Low current device suitable e.g. for handhelds
• For high frequency oscillators e.g. DRO for LNB
• For ISM band applications like
Automatic Meter Reading, Sensors etc.
• Transit frequency fT = 25 GHz
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP410 AKs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
4.5
4.1
V
Collector-emitter voltage VCES 13
Collector-base voltage VCBO 13
Emitter-base voltage VEBO 1.5
Collector current IC40 mA
Base current IB6
Total power dissipation1)
TS ≤ 100 °C
Ptot 150 mW
Junction temperature TJ150 °C
Ambient temperature T
A
-55 ... 150
Storage temperature TSt
g
-55 ... 150
1TS is measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 335 K/W
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 2 V, VBE = 0
VCE = 5 V, VBE = 0 , TA = 85 °C
(verified by random sampling)
ICES
-
-
1
2
30
50
nA
Collector-base cutoff current
VCB = 2 V, IE = 0
ICBO - 1 30
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - 0.001 0.6 µA
DC current gain
IC = 13 mA, VCE = 2 V, pulse measured
hFE 60 95 130 -
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 20 mA, VCE = 2 V, f = 2 GHz
fT18 25 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.09 0.17 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.35 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.45 -
Noise figure
IC = 2 mA, VCE = 2 V, f = 2 GHz, ZS = ZSopt
F- 1.2 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 2 GHz
Gms - 21.5 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 2 GHz,
ZS = ZL = 50 Ω
|S21|2- 18.5 -
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, f = 2 GHz,
ZS = ZL = 50 Ω
IP3- 23.5 - dBm
1dB Compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 2 GHz
P-1dB - 10.5 -
1Gms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 160
TS
0
20
40
60
80
100
120
140
mW
180
Ptot
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 0.5 1 1.5 2 2.5 3 V4
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
CCB
Transition frequency fT= ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 4 8 12 16 20 24 mA 32
IC
2
4
6
8
10
12
14
16
18
20
22
GHz
26
fT
3 to 4V
2V
1V
0.5V
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 2 V, IC = 13 mA
0246GHz 10
f
0
5
10
15
20
25
30
35
dB
45
G
Gms
Gma
|S21|²
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Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 4 8 12 16 20 24 28 mA 36
IC
0
4
8
12
16
20
24
28
32
dB
40
G
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
Power gain Gma, Gms = ƒ (VCE)
IC = 13 mA
f = parameter in GHz
01234V6
VCE
0
4
8
12
16
20
24
28
32
dB
40
G
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
Noise figure F = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 4 8 12 16 20 24 mA 30
IC
0
0.5
1
1.5
2
2.5
3
3.5
dB
4.5
Fmin
f= 10.0 GHz
f= 5.5 GHz
f= 2.4 GHz
f= 1.8 GHz
f= 0.9 GHz
f= 0.45 GHz
Noise figure F = ƒ(IC)
VCE = 2 V, f = 2 GHz
0 4 8 12 16 mA 24
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
ZS=50Ohm
ZS=ZSopt
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Collector current IC = ƒ(VBE)
VCE =2 V
0.2 0.4 0.6 0.8 V1.2
VBE
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
mA
IC
Collector current IC = ƒ(VCE)
Parameter IB
0123V5
VCE
0
5
10
15
mA
25
IC
20µA
90µA
160µA
Base current reverse IB = ƒ(VEB)
0 0.5 1 V2
VEB
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
µA
IB
DC current gain hFE = ƒ(IC)
VCE =2 V
10 -1 10 0 10 1 10 2
mA
IC
0
10
1
10
2
10
3
10
hFE
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Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3 +0.1
2±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2010-04-09
BFP410
8
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
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please contact the nearest Infineon Technologies Office ( <www.infineon.com>).
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Technologies Office.
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