7MBR75GE060 - Fuji Electric - Datasheet.Directory

7MBR75GE060 IGBT Modules

IGBT MODULE

600V / 75A / PIM

Features

· High Speed Switching

· Voltage Driv e

· Low Inductance Module Structure

· Converter Diode Bridge Dynamic Brake Circuit

Applications

· Inverter for Motor Drive

· AC and DC Servo Dr ive Amplifier

· Uninterruptible Power Supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)

Item Symbol Condition Rating Unit

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power disspation

Repetitive peak reverse voltage

Average forward current

Surge current

Repetitive peak reverse voltage

Non-Repetitive peak reverse voltage

Ave rage output current

Surge current (Non-Repetitive)

I²t (Non-Repetitive)

Conver ter Bra ke Inverter

Operating junction temperature

Storage temperature

Isolation voltage

Mounting screw torque

VCES

VGES

IC

ICP

-IC

PC

VCES

VGES

IC

ICP

PC

VRRM

IF(AV)

IFSM

VRRM

VRSM

IO

IFSM

Tj

Tstg

Viso

Continuous

1ms

1 device

Continuous

1ms

1 device

10ms

50/60Hz sine wave

Tj=150°C, 10ms

AC : 1 minute

600

±20

75

150

75

300

600

±20

50

100

200

600

1

50

800

900

50

350

648

+150

-40 to +125

AC 2500

1.7 *1

V

A

W

V

A

W

V

A

V

A

A²s

°C

V

N·m

*1 Recommendable value : 1.3 to 1.7 N·m (M4)

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Electrical characteristics (Tj=25°C unless without specified)

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Collector-Emitter voltage

Input capacitance

Switching time

Reverse recovery time of FRD

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Switching time

Reverse current

Reverse recovery time

Forward voltage

Reverse current

Converter Brake Brake (IGBT) Inver ter (IGBT)

(FWD)

ICES

IGES

VGE(th)

VCE(sat)

-VCE

Cies

ton

tr

toff

tf

trr

ICES

IGES

VCE(sat)

ton

tr

toff

tf

IRRM

trr

VFM

IRRM

VCE=600V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=75mA

VGE=15V chip

IC=75A Terminal

-IC=75A chip

Terminal

VGE=0V, VCE=10V, f=1MHz

VCC=300V

IC=75A

VGE=±15V

RG=33 ohm

IF=75A

VCES=600V, VGE=0V

VCE=0V, VGE=±20V

IC=50A, VGE=15V

VCC=300V

IC=50A

VGE=±15V

RG=51ohm

VR=600V

IF=50A

VR=800V

1.0

0.2

8.5

2.8

3.1

3.0

3.3

1.2

0.6

1.0

0.35

0.3

1.0

0.1

2.8

0.8

0.6

1.0

0.35

1

0.6

1.55

1.0

6000

5.5

mA

µA

V

pF

µs

mA

µA

V

µs

mA

µs

V

mA

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Inverter IGBT

Inverter FRD

Brake IGBT

Brake FRD

Converter Diode

With thermal compound

0.42

1.10

0.63 °C/W

3.57

2.10

0.05

Thermal resistance ( 1 device ) Rth(j-c)

Contact thermal resistance * Rth(c-f)

Thermal Characteristics

IGBT Module 7MBR75GE060

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

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IGBT Module 7MBR75GE060

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage

Tj=25°C Collector current vs. Collector-Emitter voltage

Tj=125°C

Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Collector-Emitter vs. Gate-Emitter voltage

Tj=125°C

Switching time vs. Collector current

Vcc=300V, RG=33 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current

Vcc=300V, RG=33 ohm, VGE=±15V, Tj=125°C

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

125

100

75

50

25

0 0

0 1 2 3 4 5 6

Collector-Emitter voltage : VCE [V]

10

8

6

4

2

00 5 10 15 20 25 0 5 10 15 20 25

0

Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

10 0 25 50 75 100 125

Collector current : Ic [A] Collector current : Ic [A]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

10

Inverter

150

175

125

100

75

50

25

150

175

0 1 2 3 4 5 6

10

8

6

4

2

0 25 50 75 100 125 150

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IGBT Module 7MBR75GE060

Switching time vs. RG

Vcc=300V, Ic=75A, VGE=±15V, Tj=25°C

Dynamic input characteristics

Tj=25°C

Gate resistance : RG [ohm] 100 Gate charge : Qg [nC]

0 200 400 600 800 1000 1200

100

1000

500

400

300

200

100

0

Switching time : ton, tr, toff, tf [n sec.]

Collector-Emitter voltage : VCE [V]

Forward current : IF [A]

00 1 2 3 4

Gate-Emitter voltage : VGE [V]

0

5

15

20

25

Forward voltage : VF [V]

Reverse recovery current : Irr [A]

Reverse recovery time : trr [n sec.]

Forward current vs. Forward voltage

VGE=0V

Reverse recovery characteristics

trr, Irr, vs. IF

Forward current : IF [A]

10

100

Thermal resistance : Rth (j-c) [°C/W]

Transient thermal resistance

0.1

1

0.001 0.01 0.1 1

Pulse width : PW [sec.]

Reversed biased safe operating area

+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 33 ohm

0 25 50 75 100 125 150

<< >

500

400

300

200

100

00 100 200 300 400 500 600

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

10

10 10

125

100

75

50

25

150

175

0.01

600

700

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IGBT Module 7MBR75GE060

Switching loss vs. Collector current

Vcc=300V, RG=33 ohm, VGE=±15V

Switching loss : Eon, Eoff, Err [mJ /cycle]

Collector current : Ic [A]

0

4

2

6

8

0 25 50 75 100 125 150 Collector-Emitter voltage : VCE [V]

0 5 10 15 20 25 30 35

0.1

1

10

Capacitance : Cies, Coes, Cres [nF]

Capacitance vs. Collector-Emitter voltage

Tj=25°C

Forward current : IF [A]

60

50

40

30

20

10

00 0.5 1.0 1.5 2.0

Forward voltage : VF [V]

Converter Diode

Forward current vs. Forward voltage

10

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IGBT Module 7MBR75GE060

Collector current vs. Collector-Emitter voltage

Tj=25°C Collector current vs. Collector-Emitter voltage

Tj=125°C

Collector-Emitter vs. Gate-Emitter voltage

Tj=25°C Collector-Emitter vs. Gate-Emitter voltage

Tj=125°C

Switching time vs. Collector current

Vcc=300V, RG=51 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current

Vcc=300V, RG=51 ohm, VGE=±15V, Tj=125°C

Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

125

100

75

50

25

00

0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage : VCE [V]

10

8

6

4

2

00 5 10 15 20 25 0 5 10 15 20 25

10

8

6

4

2

0

Gate-Emitter voltage : VGE [V] Gate-Emitter voltage : VGE [V]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

10 0 20 40 60 80

Collector current : Ic [A] Collector current : Ic [A]

Switching time : ton, tr, toff, tf [n sec.]

1000

100

10

125

100

75

50

25

0 20 40 60 80

Brake

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IGBT Module 7MBR75GE060

Switching time vs. RG

Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C

Dynamic input characteristics

Tj=25°C

Gate resistance : RG [ohm] Gate charge : Qg [nC]

0 50 100 150 200 250 300

100

1000

500

400

300

200

100

0

Switching time : ton, tr, toff, tf [n sec.]

Collector-Emitter voltage : VCE [V]

Gate-Emitter voltage : VGE [V]

0

5

10

15

20

25

Thermal resistance : Rth (j-c) [°C/W]

Transient thermal resistance

0.1

1

0.001 0.01 0.1 1

Pulse width PW [sec.]

Reversed biased safe operating area

+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 51 ohm

<< >

500

400

300

200

100

00 100 200 300 400 500 600

Collector-Emitter voltage : VCE [V]

Collector current : Ic [A]

100

Collector-Emitter voltage : VCE [V]

0 5 10 15 20 25 30 35

0.1

1

Capacitance : Cies, Coes, Cres [nF]

Capacitance vs. Collector-Emitter voltage

Tj=25°C

1010

10

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IGBT Module 7MBR75GE060

Outline Drawings, mm

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For more information, contact:

Collmer Semiconductor, Inc.

P.O. Box 702708

Dallas, TX 75370

972-733-1700

972-381-9991 Fax

http://www.collmer.com

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