SKDT 115 SEMIPONTTM 5 Bridge Rectifier SKDT 115 '12 '2) '/2 4/ 5 $$& 0 ' $,&& ' $.&& 5 6& 7 18/ $$-9$. $:&& $%&& 18/ $$-9$% Symbol Conditions Values Units 4/ 5 6& 7 $$& 0 412) 4;12 "< 5 .- 7= $& "< 5 $.- 7= $& "< 5 .- 7= 6), *** $& $&-& >-& --&& 0 0 0? "< 5 $.- 7= 6), *** $& @-&& 0? ? ') '; 'B "< 5 .- 7= 4) 4;5$.&0 "< 5 $.- 7= "< 5 $.- 7 A* $)6 A* $)$ A* % ' ' C 4//= 4/ "< 5 $.- 7= '// 5 '/2= '/ 5 '2 A* .& 0 "< 5 7= 4! 5 0= !9 '/ 5 E '/2 5 09D D D Target Data "9 9 Features 4 "< 5 $.- 7 "< 5 $.- 7= 5 -&***%& ( "< 5 $.- 7= * "< 5 .- 7= * 9 A* 4 "< 5 .- 7= ! 5 ,, C '! 4! '!/ "< 5 .- 7= * * "< 5 .- 7= * * "< 5 $.- 7= * * * , * $-& A* &).- ' 0 ' 4!/ "< 5 $.- 7= * * A* - 0 &)6@ 89G 89G 89G ! " # $%&& ' " " # ( ) * + %, -,. Typical Applications / 0 " / F < "< A* -&& A* -& $-& 9 .&& 9 @&& @& *** H $.@& *** H $. ' 2 2 * * -& (= ***= $ 9 $ * I A* '9D 09D D 0 0 7 7 .%& 7 ,%&& ,&&& .)- ' J J :- ! -6 SKDT 1 28-02-2006 DIL (c) by SEMIKRON SKDT 115 Fig. 1 Power dissipation vs. r.m.s. current Fig. 2 Surge overload current vs. time Fig. 3 Single thyristro on-state characteristic Fig. 4 Transient thermal impedance vs. time Fig. 5 Gate trigger characteristic 2 28-02-2006 DIL (c) by SEMIKRON SKDT 115 Dimensions in mm ! -6 / ! -6 This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 28-02-2006 DIL (c) by SEMIKRON