SOT-89 Plastic-Encapsulated Transistors
2SA1201 TRANSISTOR (PNP)
FEATURES
Power dissipation
PCM : 500 mW (Tamb=25℃)
Collector current
ICM : -800 mA
Collector-base voltage
V(BR)CBO : -120 V
Operating and storage junction temperature range
TJ, T stg: -55℃ to +150 ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base br eakdown vol tage V(BR)CBO Ic=-1mA, IE=0 -120 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-10mA, IB=0 -120 V
E mitter-b ase break dow n volt age V(BR)EBO IE=-1mA, I C=0 -5 V
Collector cut-off current ICBO VCB=-120V, IE=0
-0.1 µA
E mitte r cut-off current IEBO VEB=-5V, IC=0
-0.1 µA
DC current gain hFE(1) VCE=-5V, IC=-100mA 80 240
Collector-emitter saturati on voltage VCE(sat) IC=-500mA, I B=-50mA
-1 V
Base-emitter volt age VBE VCE=-5V, IC=-500mA
-1 V
Transit ion frequency fT V
CE=-5V, IC=-100mA 120 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 30 pF
CLASSIFICATION OF hFE(1)
Rank O Y
Range 80-160 120-240
Marking DO DY
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Transys
Electronics
LI
M
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