DG506A, DG507A DG508A, DG509A S E M I C O N D U C T O R CMOS Analog Multiplexers December 1993 Features Description * * * * * * The DG506A, DG507A, DG508A and DG509A are CMOS monolithic 16-channel/dual 8-channel and 8-channel/dual 4-channel analog multiplexers, which can also be used as demultiplexers. An enable input is provided. When the enable input is high, a channel is selected by the address inputs, and when low, all channels are off. Low Power Consumption TTL and CMOS Compatible Address and Enable Inputs 44V Maximum Power Supply Rating High Latch-Up Immunity Break-Before-Make Switching Alternate Source Applications * * * * Data Acquisition Systems Communication Systems Signal Multiplexing/Demultiplexing Audio Signal Multiplexing A channel in the ON state conducts current equally well in both directions. In the OFF state each channel blocks voltages up to the supply rails. The address inputs and the enable input are TTL and CMOS compatible over the full specified operating temperature range. The DG506A, DG507A, DG508A and DG509A are pinout compatible with the industry standard devices. Ordering Information PART NUMBER TEMP. RANGE PART NUMBER PACKAGE TEMP. RANGE PACKAGE DG506AAK -55oC to +125oC 28 Lead Ceramic DIP DG508AAK -55oC to +125oC 16 Lead Ceramic DIP DG506AAK/883B -55oC to +125oC 28 Lead Ceramic DIP DG508AAK/883B -55oC to +125oC 16 Lead Ceramic DIP o o o o DG506ABK -25 C to +85 C 28 Lead Ceramic DIP DG508ABK -25 C to +85 C DG506ABY -25oC to +85oC 28 Lead Plastic DIP DG508ABY -25oC to +85oC 16 Lead Plastic DIP DG506ACJ 0oC to +70oC 28 Lead Plastic DIP DG508ACJ 0oC to +70oC 16 Lead Plastic DIP DG506ACK 0oC to +70oC 28 Lead Ceramic DIP DG508ACK 0oC to +70oC 16 Lead Ceramic DIP o o o 16 Lead Ceramic DIP o DG506ACY 0 C to +70 C 28 Lead SOIC DG508ACY 0 C to +70 C DG507AAK -55oC to +125oC 28 Lead Ceramic DIP DG509AAK -55oC to +125oC 16 Lead Ceramic DIP DG507AAK/883B -55oC to +125oC 28 Lead Ceramic DIP DG509AAK/883B -55oC to +125oC 16 Lead Ceramic DIP 28 Lead Ceramic DIP DG509ABK -25oC to +85oC 16 Lead Ceramic DIP DG507ABK o o o o -25 C to +85 C o o 16 Lead SOIC (W) DG507ABY -25 C to +85 C 28 Lead Plastic DIP DG509ABY -25 C to +85 C 16 Lead Plastic DIP DG507ACJ 0oC to +70oC 28 Lead Plastic DIP DG509ACJ 0oC to +70oC 16 Lead Plastic DIP DG507ACK 0oC to +70oC 28 Lead Ceramic DIP DG509ACK 0oC to +70oC 16 Lead Ceramic DIP 28 Lead SOIC DG509ACY 0oC to +70oC 16 Lead SOIC (W) DG507ACY o o 0 C to +70 C Pinouts DG506A (PDIP, CDIP, SOIC) TOP VIEW DG507A (PDIP, CDIP, SOIC) TOP VIEW DG508A (PDIP, CDIP, SOIC) TOP VIEW DG509A (PDIP, CDIP, SOIC) TOP VIEW V+ 1 28 D V+ 1 16 A1 A0 1 16 A1 27 V- DB 2 28 DA 27 V- A0 1 NC 2 EN 2 15 A2 EN 2 15 GND NC 3 26 S8 NC 3 26 S8A V- 3 14 GND S16 4 25 S7 S8B 4 25 S7A S15 5 24 S6 23 S5 S7B 5 24 S6A 23 S5A S1 4 13 V+ S1A 4 13 S1B S2 5 12 S5 S2A 5 12 S2B S3 6 11 S6 S3A 6 11 S3B S4 7 10 S7 S4A 7 10 S4B D 8 9 S8 DA 8 9 DB S14 6 S6B 6 S5B 7 S12 8 22 S4 21 S3 S4B 8 22 S4A 21 S3A S11 9 20 S2 S3B 9 20 S2A S10 10 19 S1 S2B 10 19 S1A S9 11 18 EN S1B 11 18 EN GND 12 GND 12 NC 13 17 A0 16 A1 NC 13 17 A0 16 A1 A3 14 15 A2 NC 14 15 A2 S13 7 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright (c) Harris Corporation 1993 10-41 V- 3 14 V+ File Number 3137 DG506A, DG507A, DG508A, DG509A Functional Block Diagrams DG506A DG507A S1 S1A S2 S2A S3 S3A S4 S4A S5 S5A S6 S6A S7 S7A S8 DA S8A D S9 S1B S10 S2B S11 S3B S12 S4B S13 S5B ADDRESS DECODER 1 OF 16 S14 ENABLE 1 OF 4 DB ADDRESS DECODER 1 OF 8 S6B S15 S7B S16 A0 A1 A2 A3 S8B EN 4 Line Binary Address Inputs (0 0 0 1) and EN = 5V Above example shows channel 2 turned ON. A0 A1 A2 EN (ENABLE INPUT) 3 Line Binary Address Inputs (0 0 0) and EN = 5V Above example shows channels 1A and 1B turned ON. DG508A DG509A S1 S1A S2 S2A S3 S3A S4 S4A S5 ENABLE 1 OF 2 DA D S1B ADDRESS DECODER 1 OF 8 S6 DB S2B S7 S3B S8 A0 A1 A2 EN (ENABLE INPUT) S4B 3 Line Binary Address Inputs (1 0 1) and EN = 1 Above example shows channel 6 turned ON. 2 Line Binary Address Inputs (0 0) and EN = 1 Above example shows channels 1A and 1B turned ON. Schematic Diagram V+ LOGIC TRIP POINT REF DECODER + - V+ SX AX GND DX LOGIC AX INPUT OR EN VLOGIC INTERFACE AND LEVEL SHIFTER TYPICAL SWITCH 10-42 Specifications DG506A, DG507A, DG508A, DG509A Absolute Maximum Ratings Thermal Information V+ to V-. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44V V- to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-25V VIN to Ground (Note 1) . . . . . . . . . . . . . . . . . . . . . (V- -2V), (V+ +2V) VS or VD to V+ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . +2, (V- -2V) VS or VD to V- (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . .-2, (V+ +2V) Current, any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . 30mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Peak Current, S or D (Pulsed at 1ms, 10% Duty Cycle Max.) . 40mA Storage Temperature C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +125oC A & B Suffix. . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance JA JC 16 Lead Ceramic DIP Package . . . . . . . . 77oC/W 23oC/W 28 Lead Ceramic DIP Package . . . . . . . . 55oC/W 17oC/W 16 Lead Plastic DIP Package . . . . . . . . . 100oC/W 28 Lead Plastic DIP Package . . . . . . . . . 60oC/W 16 Lead SOIC (W) Package . . . . . . . . . . 100oC/W 28 Lead SOIC Package. . . . . . . . . . . . . . 70oC/W Operating Temperature Range C Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to +70oC B Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25oC to +85oC A Suffix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to +125oC Junction Temperature Ceramic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TA = +25oC, V+ = +15V, V- = -15V, GND = 0V, VEN = 2.4V, Unless Otherwise Specified DG506AA, DG507AA, DG508AA, DG509AA PARAMETERS TEST CONDITIONS DG506AB/C, DG507AB/C, DG508AB/C, DG509AB/C MIN (NOTE 2) TYP MAX MIN (NOTE 2) TYP MAX UNITS DYNAMIC CHARACTERISTICS Switching Time of Multiplexer, tTRANSITION See Figure 3 - 0.6 1 - 0.6 - s Break-Before-Make Interval, tOPEN See Figure 5 - 0.2 - - 0.2 - s Enable Turn-On Time, tON(EN) See Figure 4 - 1 1.5 - 1 - s Enable Turn-Off Time, tOFF(EN) See Figure 4 - 0.4 1.0 - 0.4 - s Off Isolation, OIRR VEN = 0V, RL = 1k, CL = 15pF, VS = 7VRMS, f = 500kHz (Note 4) - 68 - - 68 - dB Source Off Capacitance, CS(OFF) VS = 0V, VEN = 0V, f = 140kHz DG506A, DG507A - 6 - - 6 - pF DG508A, DG509A - 5 - - 5 - pF DG506A - 45 - - 45 - pF DG507A - 23 - - 23 - pF DG508A - 25 - - 25 - pF DG509A - 12 - - 12 - pF DG506A, DG507A - 6 - - 6 - pC DG508A, DG509A - 4 - - 4 - pC Drain Off Capacitance, CD(OFF) Charge Injection, Q VD = 0V, VEN = 0V, f = 140kHz See Figure 6 INPUT Address Input Current, Input Voltage High, IAH VA = 2.4V -10 -0.002 - -10 -0.002 - A VA = 15V - 0.006 10 - 0.006 10 A Address Input Current Input Voltage Low, IAL VEN = 2.4V -10 -0.002 - -10 -0.002 - A -10 -0.002 - -10 -0.0002 - A VA = 0V VEN = 0V 10-43 Specifications DG506A, DG507A, DG508A, DG509A Electrical Specifications TA = +25oC, V+ = +15V, V- = -15V, GND = 0V, VEN = 2.4V, Unless Otherwise Specified (Continued) DG506AA, DG507AA, DG508AA, DG509AA PARAMETERS DG506AB/C, DG507AB/C, DG508AB/C, DG509AB/C MIN (NOTE 2) TYP MAX MIN (NOTE 2) TYP MAX UNITS -15 - +15 -15 - +15 V IS = -200A, VD = +10V - 270 400 - 270 450 IS = -200A, VD = -10V - 230 400 - 230 450 - 6 - - 6 - % TEST CONDITIONS SWITCH Analog Signal Range, VANALOG (Note 6) Drain Source On Resistance, RDS(ON) Sequence Each Switch On VAL = 0.8V VAH = 2.4V Greatest Change in Drain -10V VS +10V Source On Resistance BeR DS(ON)MAX - R DS ( ON ) MIN) tween Channels, RDS(ON) R DS ( ON) = R DS ( ON) AVG Source Off Leakage Current, IS(OFF) VEN = 0V VS = +10V, VD = -10V -1 0.002 1 -5 0.002 5 nA VS = -10V, VD = +10V -1 -0.005 1 -5 -0.005 5 nA VS = -10V, VD = +10V -10 0.02 10 -20 0.02 20 nA VS = +10V, VD = -10V -10 -0.03 10 -20 -0.03 20 nA VS = -10V, VD = +10V -5 0.007 5 -10 0.007 10 nA VS = +10V, VD = -10V -5 -0.015 5 -10 -0.015 10 nA VS = -10V, VD = +10V - 0.01 10 - 0.01 20 nA VS = +10V, VD = -10V -10 -0.015 - -20 -0.015 - nA VS = -10V, VD = +10V - 0.005 10 - 0.005 20 nA VS = +10V, VD = -10V -10 -0.008 - -20 -0.008 - nA VD = VS(ALL) = +10V -10 0.03 10 -20 0.03 20 nA VD = VS(ALL) = -10V -10 -0.06 10 -20 -0.06 20 nA VD = VS(ALL) = +10V -5 0.015 5 -10 0.015 10 nA VD = VS(ALL) = -10V -5 -0.03 5 -10 -0.03 10 nA Drain Off Leakage Current, VEN = 0V ID(OFF) DG506A DG507A DG508A DG509A Drain On Leakage Current, (Note 5) Sequence Each ID(ON) Switch On DG506A VAL = 0.8V VAH = 2.4V DG507A VD = VS(ALL) = +10V - 0.015 10 - 0.015 20 nA VD = VS(ALL) = -10V -10 -0.03 - -20 -0.03 - nA VD = VS(ALL) = +10V - 0.007 10 - 0.007 20 nA VD = VS(ALL) = -10V -10 -0.015 - -20 -0.015 - nA Positive Supply Current, I+ VEN = 5.0V, VA = 0V - 1.3 2.4 - 1.3 2.4 mA Negative Supply Current, I- VEN = 5.0V, VA = 0V -1.5 -0.7 - -1.5 -0.7 - mA Positive Supply Current, I+ VEN = 0V, VA = 0V Standby - 1.3 2.4 - 1.3 2.4 mA Negative Supply Current, I- VEN = 0V, VA = 0V Standby -1.5 -0.7 - -1.5 -0.7 - mA DG508A DG509A POWER SUPPLY CHARACTERISTICS 10-44 Specifications DG506A, DG507A, DG508A, DG509A Electrical Specifications TA = Over Operating Temperature Range, V+ = +15V, V- = -15V, GND = 0V, VEN = 2.4V, Unless Otherwise Specified DG506AB/C, DG507AB/C, DG508AB/C, DG509AB/C DG506AA, DG507AA, DG508AA, DG509AA PARAMETERS TEST CONDITIONS MIN (NOTE 2) TYP MAX MIN (NOTE 2) TYP MAX UNITS INPUT Address Input Current, Input Voltage High, IAH VA = 2.4V -30 - - -30 - - A VA = 15V - - 30 - - 30 A Address Input Current Input Voltage Low, IAL VEN = 2.4V -30 - - -30 - - A -30 - - -30 - - A -15 - +15 -15 - +15 V VA = 0V VEN = 0V SWITCHING CHARACTERISTICS Analog Signal Range, VANALOG (Note 6) Drain Source On Resistance, RDS(ON) Sequence Each Switch On VAL = 0.8V VAH = 2.4V IS = -200A, VD = +10V - - 500 - - 550 IS = -200A, VD = -10V - - 500 - - 550 Source Off Leakage Current, IS(OFF) VEN = 0V VS = +10V, VD = -10V - - 50 - - 50 nA VS = -10V, VD = +10V -50 - - -50 - - nA VS = -10V, VD = +10V - - 300 - - 300 nA VS = +10V, VD = -10V -300 - - -300 - - nA VS = -10V, VD = +10V - - 200 - - 200 nA VS = +10V, VD = -10V -200 - - -200 - - nA Drain Off Leakage Current, VEN = 0V ID(OFF) DG506A DG507A DG508A DG509A Drain On Leakage Current, (Note 5) ID(ON) Sequence Each Switch On DG506A VAL = 0.8V VAH = 2.4V DG507A DG508A DG509A VS = -10V, VD = +10V - - 200 - - 200 nA VS = +10V, VD = -10V -200 - - -200 - - nA VS = -10V, VD = +10V - - 100 - - 100 nA VS = +10V, VD = -10V -100 - - -100 - - nA VD = VS(ALL) = +10V - - 300 - - 300 nA VD = VS(ALL) = -10V -300 - - -300 - - nA VD = VS(ALL) = +10V - - 200 - - 200 nA VD = VS(ALL) = -10V -200 - - -200 - - nA VD = VS(ALL) = +10V - - 200 - - 200 nA VD = VS(ALL) = -10V -200 - - -200 - - nA VD = VS(ALL) = +10V - - 100 - - 100 nA VD = VS(ALL) = -10V -100 - - -100 - - nA NOTES: 1. Signals on VS, VD or VIN exceeding V+ or V- will be clamped by internal diodes. Limit diode forward current to maximum current ratings. 2. Typical values are for design aid only, not guaranteed and not subject to production testing. 3. The algebraic convention whereby the most negative value is a minimum, and the most positive value is a maximum, is used in this data sheet. 4. Off isolation = 20log |VS |/|VD |, where VS = input to Off switch, and VD = output due to VS. 5. ID(ON) is leakage from driver into "ON" switch. 6. Parameter not tested. Parameter guaranteed by design or characterization. 10-45 DG506A, DG507A, DG508A, DG509A Typical Performance Curves 550 400 V+ = +15V, V- = -15V V+ = +10V, V- = -10V 450 V+ = +12V, V- = -12V V+ = +7.5V, V- = -7.5V 400 V+ = +15V V- = -15V VEN = 2.4V IO = -200A +10V SIGNALS 300 350 RDS(ON) () RDS(ON) () 500 300 250 +10V SIGNALS 200 200 150 100 100 50 0 -15 -10 -5 0 5 10 0 -55 15 -25 FIGURE 1. RDS(ON) vs ANALOG SIGNAL VOLTAGE vs SUPPLY VOLTAGE 20 DG506A (NOTE 1) A3 S1 10V EN DG507A S1B (NOTE 2) S16 A0 GND +10V A1 SWITCH OUTPUT VD D LOGIC INPUT V1M 50 125 10V S1A THRU S8A, DA A2 S2B, AND S7B A2 LOGIC INPUT 100 V+ S2 THRU S15 A1 70 +15V +2.4V V+ EN 45 FIGURE 2. TYPICAL RDS(ON) VARIATION WITH TEMPERATURE +15V +2.4V 0 TEMPERATURE (oC) ANALOG SIGNAL VOLTAGE (V) S8B A0 DB GND V- SWITCH OUTPUT VD 1M 50 35pF +10V 35pF -15V -15V NOTE: 1. Similar connections for DG508A NOTE: 2. Similar connections for DG509A FIGURE 3A. tTRANSITION SWITCHING TIME TEST CIRCUIT FIGURE 3B. tTRANSITION SWITCHING TIME TEST CIRCUIT 3V 50% 0 VS1 0.8VS1 SWITCH OUTPUT VD 0 0.8VS8 VS8 LOGIC INPUT tR < 20ns tF < 20ns S8 ON TRANSITION S1 ON TRANSITION FIGURE 3C. tTRANSITION SWITCHING TIME WAVEFORMS 10-46 DG506A, DG507A, DG508A, DG509A Typical Performance Curves (Continued) +15V +15V V+ EN V+ -5V S1 EN DG506A (NOTE 1) A3 S2 THRU S16 A2 A0 A0 SWITCH OUTPUT VO DB GND 50 -5V S1A THRU S8A, DA, S2B THRU S8B A1 A1 EN S1B DG507A (NOTE 2) A2 V- EN 1k DB GND 50 SWITCH OUTPUT VO V- 35pF 1k -15V 35pF -15V NOTE: 1. Similar connections for DG508A NOTE: 2. Similar connections for DG509A FIGURE 4A. ENABLE tON and tOFF SWITCHING TIME TEST CIRCUIT FIGURE 4B. ENABLE tON and tOFF SWITCHING TIME TEST CIRCUIT 3V EN 50% 50% 0V tON (EN) tOFF (EN) 0V 0.1VO SWITCH OUTPUT VO tR < 20ns tF < 20ns 0.9VO VO FIGURE 4C. ENABLE tON and tOFF SWITCHING TIME WAVEFORMS +15V +2.4V V+ EN A0 ALL S AND DA +5V 3V LOGIC INPUT DG506A DG507A (NOTE 3) 0V A1 A2 A3 LOGIC INPUT GND SWITCH OUTPUT VO SWITCH OUTPUT VD DB V- 50% 0V 1k 50 50% tOPEN 35pF -15V tR < 20ns tF < 20ns NOTE: 3. Similar connections for DG508A, DG509A. FIGURE 5A. tOPEN (BREAK-BEFORE-MAKE) SWITCHING TIME TEST CIRCUIT FIGURE 5B. tOPEN (BREAK-BEFORE-MAKE) SWITCHING TIME WAVEFORMS 10-47 DG506A, DG507A, DG508A, DG509A Typical Performance Curves (Continued) +15V +15V V+ V+ EN EN DG506A (NOTE 1) A3 DG507A (NOTE 2) S1 A2 A2 A1 A1 A0 LOGIC INPUT GND D A0 VO LOGIC INPUT V- GND S1A, S1B DA OR DB VO V- 1000pF 1000pF -15V -15V NOTE: 1. Similar connections for DG508A NOTE: 2. Similar connections for DG509A FIGURE 6A. CHARGE INJECTION TEST CIRCUIT FIGURE 6B. CHARGE INJECTION TEST CIRCUIT 3V EN 0 VO VO VO is the measured voltage error due to charge injection. The error voltage in Coulombs is Q = CL x VO. FIGURE 6C. CHARGE INJECTION WAVEFORMS 10-48 DG506A, DG507A, DG508A, DG509A Truth Tables DG506A DG507A A3 A2 A1 A0 EN ON SWITCH A2 A1 A0 EN ON SWITCH X X X X 0 None X X X 0 None 0 0 0 0 1 1 0 0 0 1 1 0 0 0 1 1 2 0 0 1 1 2 0 0 1 0 1 3 0 1 0 1 3 0 0 1 1 1 4 0 1 1 1 4 0 1 0 0 1 5 1 0 0 1 5 0 1 0 1 1 6 1 0 1 1 6 0 1 1 0 1 7 1 1 0 1 7 0 1 1 1 1 8 1 1 1 1 8 1 0 0 0 1 9 1 0 0 1 1 10 1 0 1 0 1 11 1 0 1 1 1 12 1 1 0 0 1 13 1 1 0 1 1 14 1 1 1 0 1 15 1 1 1 1 1 16 Logic "0" = VAL, VENL 0.8V, Logic "1" = VAH, VENH 2.4V. Logic "0" = VAL, VENL 0.8V, Logic "1" = VAH, VENH 2.4V. DG508A DG509A A2 A1 A0 EN ON SWITCH A1 A0 EN ON SWITCH X X X 0 None X X 0 None 0 0 0 1 1 0 0 1 1A, 1B 0 0 1 1 2 0 1 1 2A, 2B 0 1 0 1 3 1 0 1 3A, 3B 0 1 1 1 4 1 1 1 4A, 4B 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 A0, A1, EN Logic "1" = VAH 2.4V, Logic "0" = VAL 0.8V A0, A1, A2, EN Logic "1" = VAH 2.4V, Logic "0" = VAL 0.8V 10-49 DG506A Die Characteristics DIE DIMENSIONS: 3810m x 2770m METALLIZATION: Type: Al Thickness: 10kA 1kA GLASSIVATION: Type: PSG/Nitride Thickness: PSG: 7kA 1.4kA, Nitride: 8kA 1.2kA WORST CASE CURRENT DENSITY: 9.1 x 104 A/cm2 Metallization Mask Layout DG506A NC NC V+ D V- S16 S8 S15 S7 S14 S6 S13 S5 S12 S4 S11 S3 S10 S2 S9 S1 GND NC A3 A2 A1 10-50 A0 EN DG507A Die Characteristics DIE DIMENSIONS: 3810m x 2770m METALLIZATION: Type: Al Thickness: 10kA 1kA GLASSIVATION: Type: PSG/Nitride Thickness: PSG: 7kA 1.4kA, Nitride: 8kA 1.2kA WORST CASE CURRENT DENSITY: 9.1 x 104 A/cm2 Metallization Mask Layout DG507A NC DB V+ DA V- S8B S8A S7B S7A S6B S6A S5B S5A S4B S4A S3B S3A S2B S2A S1B S1A GND NC NC A2 A1 10-51 A0 EN DG508A Die Characteristics DIE DIMENSIONS: 3100m x 2083m METALLIZATION: Type: Al Thickness: 10kA 1kA GLASSIVATION: Type: PSG/Nitride Thickness: PSG: 7kA 1.4kA, Nitride: 8kA 1.2kA WORST CASE CURRENT DENSITY: 9.1 x 104 A/cm2 Metallization Mask Layout DG508A EN A0 A1 A2 GND VV+ S1 S5 S2 S6 S3 S7 S4 D 10-52 S8 DG509A Die Characteristics DIE DIMENSIONS: 3100m x 2083m METALLIZATION: Type: Al Thickness: 10kA 1kA GLASSIVATION: Type: PSG/Nitride Thickness: PSG: 7kA 1.4kA, Nitride: 8kA 1.2kA WORST CASE CURRENT DENSITY: 9.1 x 104 A/cm2 Metallization Mask Layout DG509A EN A0 A1 GND V+ VS1B S1A S2B S2A S3B S3A S4B S4A DA 10-53 DB