DATA SH EET
Product specification
Supersedes data of 2001 Mar 02 2001 Apr 17
DISCRETE SEMICONDUCTORS
BAP50-05W
General purpose PIN diode
k
, halfpage
M3D102
2001 Apr 17 2
Philips Semiconductors Product specification
General purpose PIN diode BAP50-05W
FEATURES
Two elements in common cathode configuration in a
small-sized plastic SMD package
Low diode capacitance
Low diode forward resistance.
APPLICATIONS
General RF applications.
DESCRIPTION
Two planar PIN diodes in common cathode configuration
in a SOT323 small SMD plastic package.
PINNING
PIN DESCRIPTION
1 anode
2 anode
3 common cathode
handbook, halfpage
3
21
Top view
MAM382
21
3
Marking code: W4-.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRcontinuous reverse voltage 50 V
IFcontinuous forward current 50 mA
Ptot total power dissipation Ts=90°C240 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 65 +150 °C
2001 Apr 17 3
Philips Semiconductors Product specification
General purpose PIN diode BAP50-05W
ELECTRICAL CHARACTERISTICS
Tj= 25°C unless otherwise specified.
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per diode
VFforward voltage IF=50mA 0.95 1.1 V
VRreverse voltage IR=10µA50−−V
I
Rreverse current VR=50V −−100 nA
Cddiode capacitance VR= 0; f = 1 MHz 0.45 pF
VR= 1 V; f = 1 MHz 0.35 0.6 pF
VR= 5 V; f = 1 MHz 0.3 0.5 pF
rDdiode forward resistance IF= 0.5 mA; f = 100 MHz; note 1 25 40
IF= 1 mA; f = 100 MHz; note 1 14 25
IF= 10 mA; f = 100 MHz; note 1 35
|s
21|2isolation VR= 0; f = 900 MHz 19 dB
VR= 0; f = 1800 MHz 15.7 dB
VR= 0; f = 2450 MHz 13.5 dB
|s21|2insertion loss IF= 0.5 mA; f = 900 MHz 1.84 dB
IF= 0.5 mA; f = 1800 MHz 1.90 dB
IF= 0.5 mA; f = 2450 MHz 1.92 dB
|s21|2insertion loss IF= 1 mA; f = 900 MHz 1.08 dB
IF= 1 mA; f = 1800 MHz 1.13 dB
IF= 1 mA; f = 2450 MHz 1.17 dB
|s21|2insertion loss IF= 10 mA; f = 900 MHz 0.26 dB
IF= 10 mA; f = 1800 MHz 0.30 dB
IF= 10 mA; f = 2450 MHz 0.36 dB
τLcharge carrier life time whenswitchedfromIF=10mAto
I
R= 6 mA; RL= 100 ;
measured at IR=3mA
1.05 −µs
L
Sseries inductance IF= 100 mA; f = 100 MHz 1.6 nH
SYMBOL PARAMETER VALUE UNIT
Rth j-s thermal resistance from junction to soldering point 250 K/W
2001 Apr 17 4
Philips Semiconductors Product specification
General purpose PIN diode BAP50-05W
GRAPHICAL DATA
handbook, halfpage
103
102
10
1
101
MLD605
1011IF (mA)
rD
()
10 102
Fig.2 Forward resistance as a function of
forward current; typical values.
f = 100 MHz; Tj=25°C.
handbook, halfpage
0VR (V)
Cd
(fF)
20
600
0
200
400
4 8 12 16
MLD606
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj=25°C.
handbook, halfpage
0.5 3
0
5
s21 2
(dB)
4
3
2
1
1f (GHz)
1.5 2 2.5
MLD607
(1)
(3)
(2)
Fig.4 Insertion loss |s21|2 of the diode in on-state
as a function of frequency; typical values.
(1) IF=10mA. (2) IF= 1 mA. (3) IF= 0.5 mA.
Diode inserted in series with a 50 stripline circuit and
biased via the analyzer Tee network.
Tamb =25°C.
handbook, halfpage
0.5 3
0
25
s21 2
(dB)
20
15
10
5
1f (GHz)
1.5 2 2.5
MLD608
Fig.5 Isolation (|s21|2) of the diode in off-state as a
function of frequency; typical values.
Diode zero biased and inserted in series with a 50 stripline circuit.
Tamb =25°C.
2001 Apr 17 5
Philips Semiconductors Product specification
General purpose PIN diode BAP50-05W
PACKAGE OUTLINE
UNIT A1
max bpcD Ee
1
H
E
L
pQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT323
97-02-28
2001 Apr 17 6
Philips Semiconductors Product specification
General purpose PIN diode BAP50-05W
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyother conditionsabovethose given inthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warrantythat suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusing orsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofany ofthese products,conveysno licenceor title
under any patent, copyright, or mask work right to these
products,and makes no representationsorwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Apr 17 7
Philips Semiconductors Product specification
General purpose PIN diode BAP50-05W
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2001 72
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Printed in The Netherlands 613512/02/pp8 Date of release: 2001 Apr 17 Document order number: 9397 750 08186