INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 27 April, 2004. MIL-PRF-19500/290K 27 February 2004 SUPERSEDING MIL-PRF-19500/290J 3 July 2002 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N2904, 2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV, JANJ, JANS, JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels for type 2N2905A. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices which have passed RHA requirements. 1.2 Physical dimensions. See figure 1 herein (similar to TO-39). * 1.3 Maximum ratings. Types 2N2904 (1) 2N2905 (1) 2N2904A, (2) 2N2905A, (2) 2N2904AL, (2) 2N2905AL (2) PT = (1) TA = +25C PT = (2) TC = +25C VCBO VCEO VEBO IC TSTG and TJ RJA RJC W W V dc V dc V dc mA dc C C/W C/W 0.8 0.8 0.8 0.8 0.8 0.8 3.0 3.0 3.0 3.0 3.0 3.0 60 60 60 60 60 60 40 40 60 60 60 60 5 5 5 5 5 5 600 600 600 600 600 600 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 175 175 175 175 175 175 50 50 50 50 50 50 (1) For derating see figures 2 and 3. (2) For derating see figures 4 and 5. * Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to Semiconductor@dscc.dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at www.dodssp.daps.mil. AMSC N/A FSC 5961 MIL-PRF-19500/290K 1.4 Primary electrical characteristics at TA = +25C. hFE at VCE = 10 V dc Min Max Min Max Min Max Min Max hFE1 hFE2 hFE3 hFE4 (1) hFE5 (1) IC = 0.1 mA dc IC = 1 mA dc IC = 10 mA dc IC = 150 mA dc IC = 500 mA dc 2N2904 2N2904 2N2904 2N2904 2N2904 20 25 175 35 40 120 20 2N2905 2N2905 2N2905 2N2905 2N2905 35 50 450 75 100 300 30 2N2904A 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 2N2904A 2N2904AL 40 40 175 40 40 120 40 2N2905A 2N2905AL 2N2905A 2N2905AL 2N2905A 2N2905AL 2N2905A 2N2905AL 2N2905A 2N2905AL 75 100 450 100 100 300 50 (1) Pulsed (see 4.5.1). Types 2N2904 2N2904A 2N2904AL 2N2905 2N2905A 2N2905AL Min Max |hfe| f = 100 MHz VCE = 20 V dc 100 kHz f 1 MHz VCB = 10 V dc IC = 50 mA dc Switching Cobo IE = 0 ton (see figure 2) toff (see figure 3) pF ns ns 8 45 300 2.0 2 MIL-PRF-19500/290K Dimensions Symbol Inches Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .240 .260 6.10 6.60 HD .335 .370 8.51 9.40 LC .200 TP 5.08 TP Notes 6 LD .016 .021 0.41 0.53 7, 8 LL .500 .750 12.70 19.05 7, 8, 12 LU .016 .019 .041 0.48 7, 8 1.27 7, 8 .050 L1 L2 .250 6.35 P .100 2.54 Q .050 7, 8 1.27 5 TL .029 .045 0.74 1.14 4 TW .028 .034 0.71 0.86 3 0.25 10 r .010 45 TP 45 TP 6 NOTES: 1. Dimension are in inches. 2. Millimeters are given for general information only. 3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm). 4. Dimension TL measured from maximum HD. 5. Body contour optional within zone defined by HD, CD, and Q. 6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and L minimum. Diameter is 8. 9. 10. 11. 12. 13. uncontrolled in L1 and beyond LL minimum. All three leads. The collector shall be internally connected to the case. Dimension r (radius) applies to both inside corners of tab. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum. Lead 1 = emitter, lead 2 = base, lead 3 = collector. * FIGURE 1. Physical dimensions (similar to TO-39). 3 MIL-PRF-19500/290K 2. APPLICABLE DOCUMENTS * 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. * 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. (Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.dap.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS * 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figure 1 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I, II, and III. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4 MIL-PRF-19500/290K 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4 and table I, II, and III.). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein * 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In case qualification was awarded to a prior revision of the specification sheet that did not request the performance of table III tests, the tests specified in table III herein shall be performed by the first inspection lot of this revision to maintain qualification. * 4.2.2 JANJ devices. For JANJ level, 3.3.1 through 3.3.1.3 of MIL-PRF-19500 shall apply, except as modified herein. Supplier imposed requirements as well as alternate screens, procedures, and/or process controls shall be documented in the quality management (QM) plan and must be submitted to the qualifying activity for approval. When alternate screens, procedures, and/or process controls are used in lieu of the JANJ screens herein, equivalency shall be proven and documented in the QM plan. Radiation characterization may be submitted in the QM plan at the option of the manufacturer, however, 3.3.1.1 of MIL-PRF-19500 is not required. Lot formation and conformance inspection requirements for JANJ shall be those used for JANTXV devices as a minimum. Die lot controls and rework requirements shall be in accordance with 3.13 and D.3.13.2.1 of MIL-PRF-19500. 4.2.2.1 JANJ qualification. For JANJ qualification, 4.4.2.2 herein shall be performed as required by the qualifying activity. 5 MIL-PRF-19500/290K 4.3 Screening (JANTX, JANTXV, JANJ, and JANS levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table IV of MIL-PRF-19500) JANS level JANJ level 1b Required Required 2 Optional Optional Required Not applicable Required (see 4.3.2) Required Not applicable Required (see 4.3.2) 4 Required Optional 5 Required Required (one pass minimum) 6 Not applicable Not applicable 7 Optional Optional 8 Required Not required (Bin and cell) 9 ICBO2, hFE4 ICBO2, hFE4 10 24 hours minimum 24 hours minimum 11 ICBO2; hFE4; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater. hFE4 = 15 percent. ICBO2; hFE4; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater. hFE4 = 15 percent. 12 See 4.3.1, 240 hours minimum See 4.3.1, 160 hours minimum 13 Subgroups 2 and 3 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater. hFE4 = 15 percent. Subgroups 2 and 3 of table I herein; ICBO2 = 100 percent of initial value or 5 nA dc, whichever is greater. hFE4 = 15 percent. 14a and 14b Required Required 15 Required Required - Attributes data only, film or non-film techniques may be utilized. 16 Required Required 3a 3b (1) 3c See notes at end of paragraph. 6 MIL-PRF-19500/290K 4.3 Screening (JANTX, JANTXV, JANJ, and JANS levels only) - Continued. Measurement Screen (see table IV of MIL-PRF-19500) JANTXV and JANTX level 1b Required (JANTXV only) 2 Not required 3a 3b (1) 3c Required Not applicable Required (see 4.3.2) 4 Optional 5 Not required 6 Not applicable 7a and 7b Optional 8 Not required 9 Not applicable 10 24 hours minimum 11 ICBO2; hFE4 12 See 4.3.1, 80 hours minimum 13 Subgroup 2 of table I herein; ICBO2= 100 percent of initial value or 5 nA dc, whichever is greater. hFE4 = 15 percent. 14a and 14b 15 and 16 Required Not required (1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. 7 MIL-PRF-19500/290K * 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc, power shall be applied to the device to achieve a junction temperature, TJ = +135C minimum using a minimum PD = 75 percent of PT maximum TA ambient rated as defined in 1.3. * 4.3.2 Thermal impedance (ZJX measurements). See figures 6 and 7. The ZJX measurements shall be performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where appropriate). The ZJX limit used in screen 3c of 4.3 herein shall comply with the thermal impedance graph in figure n (less than or equal to the curve value at the same tH time) and/or shall be less than the process determined statistical maximum limit as outlined in method 3131. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of table I, group A1 and group A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2 herein). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500 and table I herein. Group A inspection for JANJ shall be in accordance with JANTXV of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein. See 4.4.2.2 for JAN, JANTX, JANTXV, and JANJ group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, JANTXV, and JANJ shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 and 4.5.3 herein. * 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B4 1037 VCB = 10 dc. B5 1027 VCB = 10 V dc; PD 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure occurs, resubmission shall be at the test conditions of the original sample.) Option 1: 96 hours minimum sample size in accordance with table VIa of MIL-PRF-19500, adjust TA or PD to achieve TJ = +275C minimum. Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to achieve a TJ = +225C minimum. 8 MIL-PRF-19500/290K * 4.4.2.2 Group B inspection (JAN, JANTX, JANTXV and JANJ). Separate samples may be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic failures during conformance inspection shall be analyzed to the extent possible to identify root cause and corrective action. Step Method Condition 1 1039 Steady-state life: Test condition B, 1,000 hours, VCB = 10 V dc, power shall be applied to achieve a junction temperature of TJ = +150C minimum. A minimum of 75 percent of rated power shall be dissipated. No heat sink or forced-air cooling on devices shall be permitted. n = 45, c = 0. 2 1039 HTRB: Test condition A, 48 hours minimum. n = 45 devices, c = 0. 3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200C, n = 22, c = 0. 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements. a. For JAN, JANTX, JANTXV, and JANJ samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, JANTXV and JANJ) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, JANTXV, and JANJ) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C6 1027 Steady-state life: Test condition B, 1,000 hours, VCB = 10 V dc, power shall be applied to achieve a junction temperature of TJ = +150C minimum. A minimum of 75 percent of rated power PT shall be dissipated. No heat sink or forced- air-cooling on devices shall be permitted. 4.4.3.2 Group C inspection, table VII (JAN, JANTX, JANTXV, and JANJ) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C5 3131 RJA (see 1.3). C6 Not applicable. 9 MIL-PRF-19500/290K 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes table I tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group D inspection. Quality conformance inspection for hardness assured JANS and JANTXV types shall include the group D tests specified in table II. These tests shall be performed as required in accordance with MIL-PRF-19500 and method 1019 of MIL-STD-750 for total ionizing dose or method 1017 of MIL-STD-750 for neutron fluence as applicable. * 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-points) shall be in accordance with table I, subgroup 2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except the output capacitor shall be omitted. 4.5.3 Delta requirements. Delta requirements shall be as specified below: Step Inspection Method MIL-STD-750 Conditions Symbol Limit 1. Collector-base cutoff current 3036 Bias condition D, VCB = 50 V dc ICB02 (1) 100 percent of initial value or 8 nA dc, whichever is greater. 2. Forward current transfer ratio 3076 VCE = 10 V dc; IC = 150 mA dc; pulsed see 4.5.1 hFE4 (1) 25 percent change from initial reading. (1) Devices which exceed the table I limits for this test shall not be accepted. 10 MIL-PRF-19500/290K * TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 2/ Visual and mechanical inspection 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Electrical measurements 4/ Table I, subgroup 2 Bond strength 3/ 4/ 2037 Precondition TA = +250C at t = 24 hours or TA = +300C at t = 2 hours, n = 11 wires, c = 0 Decap internal visual (design verification) 2075 n = 4 devices, c = 0 Thermal impedance 3101 See 4.3.2 ZJX Collector to base, cutoff current 3036 VCB = 60 V dc ICBO1 Emitter to base, cutoff current 3061 VBE = 5 V dc IEBO1 Breakdown voltage, collector to emitter 3011 Bias condition D; IC = 10 mA dc, pulsed (see 4.5.1) Subgroup 2 A dc 10 A dc 40 60 60 3036 Bias condition D; VCB = 50 V dc 3061 Bias condition D; VEB = 3.5 V dc See footnotes at end of table. 11 V dc V dc Vdc ICBO2 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Emitter to base cutoff current 10 V(BR)CEO 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector to base cutoff current C/W IEBO2 20 10 10 nA dc nA dc nA dc 50 nA dc MIL-PRF-19500/290K * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Collector to emitter cutoff current 3041 2N2904, 2N2905 VCE = 60 V dc 2N2905A, 2N2905AL 3076 VCE = 60 V dc VCE = 10 V dc, IC = 0.1 mA dc hFE1 20 35 40 75 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Forward current transfer ratio 3076 VCE = 10 V dc, IC = 1.0 mA dc hFE2 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Forward current transfer ratio 25 50 40 100 3076 VCE = 10 V dc, IC = 10 mA dc 35 75 40 100 3076 VCE = 10 V dc, IC = 150 mA dc, pulsed (see 4.5.1) hFE4 40 40 100 100 2N2904 2N2904A, 2N2904AL 2N2905 2N2905A, 2N2905AL Forward current transfer ratio 175 450 175 450 hFE3 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Forward current transfer ratio 1 ICES VCE = 40 V dc 2N2904A, 2N2904AL Forward current transfer ratio Bias condition C 3076 VCE = 10 V dc, IC = 500 mA dc, pulsed (see 4.5.1) hFE5 20 30 40 50 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL See footnotes at end of table. 12 120 120 300 300 A dc MIL-PRF-19500/290K * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Collector to emitter voltage (saturated) 3071 IC = 150 mA dc, IB = 15 mA dc, pulsed (see 4.5.1) VCE(sat)1 0.4 V dc Collector to emitter voltage (saturated) 3071 IC = 500 mA dc, IB = 50 mA dc, pulsed (see 4.5.1) VCE(sat)2 1.6 V dc Base emitter voltage (saturated) 3066 Test condition A, IC = 150 mA dc, I VBE(sat)1 1.3 V dc Base emitter voltage (saturated) 3066 VBE(sat)2 2.6 V dc 20 10 10 A dc A dc A dc B = 15 mA dc, pulsed (see 4.5.1) Test condition A, IC = 500 mA dc, I B = 50 mA dc, pulsed (see 4.5.1) Subgroup 3 High temperature operation: Collector to base cutoff current TA = +150C 3036 Bias condition D, VCB = 50 V dc ICBO3 2N2904, 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Low temperature operation: Forward current transfer ratio TA = -55C 3076 VCE = 10 V dc, IC = 1.0 mA dc hFE6 15 30 20 50 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL See footnotes at end of table. 13 MIL-PRF-19500/290K * TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 4 Small-signal short-circuit forward-current transfer ratio 3206 VCE = 10 V dc, IC = 1 mA dc, f = 1 kHz hfe 25 50 40 100 2N2904 2N2905 2N2904A, 2N2904AL 2N2905A, 2N2905AL Small-signal short-circuit forward-current transfer ratio 3306 VCE = 20 V dc, IC = 50 mA dc, f = 100 MHz |hfe| Open circuit output capacitance 3236 VCB = 10 V dc, IE = 0, 100 kHz f 1 MHz Cobo 8 pF Input capacitance (output open-circuited) 3240 Cibo 30 pF Turn-on time VEB = 2.0 V dc, IC = 0, 100 kHz f 1 MHz (see 4.5.2) (See figure 8) ton 45 ns Turn-off time (See figure 9) toff 300 ns 2.0 Subgroups 5 and 6 Not applicable 1/ 2/ 3/ 4/ 5/ For sampling plan see MIL-PRF-19500. For resubmission of failed subgroup 1, double the sample size of the failed test or sequence of tests. A failure in table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. Separate samples may be used. Not required for JANS devices. Not required for laser marked devices. 14 MIL-PRF-19500/290K TABLE II. Group D inspection and end-point limits. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Neutron irradiation 1017 Collector to base cutoff current 3036 M2N2905A, D2N2905A, R2N2905A, H2N2905A Forward current transfer ratio Bias condition D ICBO2 10 VCB = 50 V dc 3076 VCE = 10 V dc; IC = 0.1 mA dc hFE1 M2N2905A D2N2905A R2N2905A H2N2905A Forward current transfer ratio 61 59 31 5 3076 VCE = 10 V dc, IC = 1.0 mA dc hFE2 89 82 53 12 M2N2905A D2N2905A R2N2905A H2N2905A Forward current transfer ratio 3076 VCE = 10 V dc, IC = 10 mA dc, pulsed (see 4.5.1) hFE3 90 87 81 22 M2N2905A D2N2905A R2N2905A H2N2905A Forward current transfer ratio 3076 VCE = 10 V dc, IC = 150 mA dc hFE4 84 80 58 28 M2N2905A D2N2905A R2N2905A H2N2905A Forward current transfer ratio 3076 VCE = 10 V dc, IC = 50 mA dc hFE5 45 45 40 20 M2N2905A D2N2905A R2N2905A H2N2905A See footnote at end of table. 15 450 450 450 450 nA dc MIL-PRF-19500/290K TABLE II. Group D inspection and end-point limits - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 - Continued Collector to emitter voltage (saturated) 3071 IC = 150 mA dc, IB = 15 mA dc, pulsed (see 4.5.1) VCE(sat)1 M2N2905A, D2N2905A, R2N2905A, H2N2905A Collector to emitter voltage (saturated) 3071 IC = 500 mA dc, IB = 50 mA dc, pulsed (see 4.5.1) V dc 1.75 V dc 10 nA dc VCE(sat)2 M2N2905A, D2N2905A, R2N2905A, H2N2905A Subgroup 2 0.44 1019 Steady-state total dose irradiation Collector to base cutoff current 3036 Bias condition D; VCB = 50 V dc ICBO2 M2N2905A, D2N2905A R2N2905A, H2N2905A Forward current transfer ratio 3076 VCE = 10 V dc, IC = 0.1 mA dc hFE1 75 25 25 M2N2905A, D2N2905A R2N2905A H2N2905A Forward current transfer ratio 3076 VCE = 10 V dc, IC = 1.0 mA dc hFE2 89 82 43 13 M2N2905A D2N2905A R2N2905A H2N2905A Forward current transfer ratio 3076 VCE = 10 V dc, IC = 10 mA dc hFE3 90 87 57 32 M2N2905A D2N2905A R2N2905A H2N2905A See footnote at end of table. 16 450 450 450 450 MIL-PRF-19500/290K TABLE II. Group D inspection and end-point limits - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 - Continued Forward current transfer ratio 3076 VCE = 10 V dc, IC = 150 mA dc, pulsed (see 4.5.1) hFE4 M2N2905A D2N2905A R2N2905A H2N2905A Forward current transfer ratio 84 81 58 48 3076 VCE = 10 V dc, IC = 500 mA dc, pulsed (see 4.5.1) hFE5 M2N2905A, D2N2905A R2N2905A H2N2905A Collector to emitter voltage (saturated) 50 40 24 3071 IC = 150 mA dc; IB = 15 mA dc, pulsed (see 4.5.1) 0.44 0.44 0.50 M2N2905A, D2N2905A R2N2905A H2N2905A Collector to emitter voltage (saturated) V dc VCE(sat)1 3071 IC = 500 mA dc; IB = 50 mA dc, pulsed (see 4.5.1) V dc VCE(sat)2 1.75 2.2 2.5 M2N2905A, D2N2905A R2N2905A H2N2905A 1/ For sampling plan, see MIL-PRF-19500. 17 MIL-PRF-19500/290K * TABLE III. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Method Qualification Conditions Subgroup 1 45 devices c=0 Temperature cycling (air to air) 1051 Hermetic seal 1071 Test condition C, 500 cycles Fine leak Gross leak Electrical measurements See table I, subgroup 2 and 4.5.3 herein. 45 devices c=0 Subgroup 2 Intermittent life 1037 Electrical measurements VCB = 10 V dc, 6,000 cycles See table I, subgroup 2 and 4.5.3 herein. Subgroup 3 Destructive physical analysis (DPA) 3 devices c=0 2102 Subgroup 4 15 devices, c=0 Thermal impedance, thermal resistance curves Each supplier shall submit their (typical) maximum design thermal impedance curves. In addition, optimal test conditions and ZJX limit shall be provided to the qualifying activity in the qualification report. Sample size N/A Subgroup 5 Not applicable Subgroup 6 ESD 3 devices c=0 1020 Subgroup 8 Reverse stability 45 devices c=0 1033 Condition A for devices 400 V, condition B for devices 400 V. 18 MIL-PRF-19500/290K Constant Tj Derating SOA Curves TA=25C 2N2904, 2N2905 0.9 Legend (Top to Bottom) Redline (Dashed) Per Para 1.3 Derate to 150C Derate to 125C Derate to 110C DC Operation Maximum Rating (W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 DC Operation Thermal Resistance Junction to Ambient = 175C/W 100 125 (Ambient) 150 175 200 225 Tsink (C) Note: Max Finish-Alloy Temp = 175.0C NOTES: 1/ Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2/ Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3) 3/ Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4/ Derate design curve chosen at TJ +125C and +110C, to show power rating where most users want to limit TJ in their application. * FIGURE 2. Derating for 2N2904, 2N2905, (RJA) PCB (TO-39). 19 MIL-PRF-19500/290K Constant Tj Derating SOA Curves TA=25C 2N2904A, 2N2905A, 2N2904AL, 2N2905AL 0.9 Legend (Top to Bottom) Redline (Dashed) Per Para 1.3 Derate to 150C Derate to 125C Derate to 110C DC Operation Maximum Rating (W) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 25 50 75 DC Operation Thermal Resistance Junction to Ambient = 175C/W 100 125 (Ambient) 150 175 200 225 Tsink (C) Note: Max Finish-Alloy Temp = 175.0C NOTES: 1/ Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2/ Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3) 3/ Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4/ Derate design curve chosen at TJ +125C and +110C, to show power rating where most users want to limit TJ in their application. * FIGURE 3. Derating for 2N2904A, 2N2904AL, 2N2905A, 2N2905AL, (RJA) PCB (TO-39). 20 MIL-PRF-19500/290K Constant Tj Derating SOA Curves TC=25C 2N2904, 2N2905 3.5 Legend (Top to Bottom) Redline (Dashed) Per Para 1.3 Derate to 150C Derate to 125C Derate to 110C DC Operation Maximum Rating (W) 3 2.5 2 1.5 1 0.5 0 25 50 75 DC Operation Thermal Resistance Junction to Case = 50.0C/W 100 125 (Case) 150 175 200 225 Tsink (C) Note: Max Finish-Alloy Temp = 175.0C NOTES: 1/ Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2/ Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3) 3/ Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4/ Derate design curve chosen at TJ +125C and +110C, to show power rating where most users want to limit TJ in their application. * FIGURE 4. Derating for 2N2904, 2N2905, (RJC) PCB (TO-39). 21 MIL-PRF-19500/290K Constant Tj Derating SOA Curves TC=25C 2N2904A, 2N2905A, 2N2904AL, 2N2905AL 3.5 Legend (Top to Bottom) Redline (Dashed) Per Para 1.3 Derate to 150C Derate to 125C Derate to 110C DC Operation Maximum Rating (W) 3 2.5 2 1.5 1 0.5 0 25 50 75 DC Operation Thermal Resistance Junction to Case = 50.0C/W 100 125 (Case) 150 175 200 225 Tsink (C) Note: Max Finish-Alloy Temp = 175.0C NOTES: 1/ Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2/ Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3) 3/ Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4/ Derate design curve chosen at TJ +125C and +110C, to show power rating where most users want to limit TJ in their application. * FIGURE 5. Derating for 2N2904A, 2N2904AL, 2N2905A, 2N2905AL, (RJC) PCB (TO-39). 22 MIL-PRF-19500/290K Maximum Thermal Impedance 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 1000 Theta (C/W) 100 10 1 Time (s) Ambient free air cooled TA = +25C, 800mW, thermal resistance RJA = 175C/W. * FIGURE 6. Thermal impedance graph (RJA) for all 2N2904, and 2N2905 devices (TO-39). 23 MIL-PRF-19500/290K Maximum Thermal Impedance 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 Theta (C/W) 0.000001 10 1 Time (s) Ambient Case Mounted TC = +25C, thermal resistance RJC = 50C/W. * FIGURE 7. Thermal impedance graph (RJC) for all 2N2904, and 2N2905 devices (TO-39). 24 MIL-PRF-19500/290K NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent, and the generator source impedance shall be 50 . 2. Sampling oscilloscope: Zin 100 k, Cin 12 pF, rise time 5 ns. * FIGURE 8. Saturated turn-on switching time test circuit. NOTES: 1. The rise time (tr) of the applied pulse shall be 2.0 ns, duty cycle 2 percent, and the generator source impedance shall be 50. 2. Sampling oscilloscope: Zin 100 k, Cin 12 pF, rise time 5 ns. * FIGURE 9. Saturated turn-off switching time test circuit. 25 MIL-PRF-19500/290K 5. PACKAGING * 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or within the Military Service's system commands. Packaging data retrieval is available from the managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. * 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Title, number, and date of this specification. b. Packaging requirements (see 5.1). c. Lead finish (see 3.4.1). d. Product assurance level and type designator. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML No. 19500) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000 or e-mail vqe.chief@dla.mil. 6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 DLA - CC Preparing activity: DLA - CC (Project 5961-2792) Review activities: Army - AR, MI, SM Navy - AS, MC Air Force - 19, 99 * NOTE: The activities listed above were interested in this document as of the date of this document. Since organizations and responsibilities can change, you should verify the currency of the information above using the ASSIST Online database at www.dodssp.daps.mil . 26