JANTXV2N2905A - Freescale Semiconductor / Motorola

The documentation and process conversion measures

necessary to comply with this document shall be completed

by 27 April, 2004.

INCH-POUND

MIL-PRF-19500/290K

27 February 2004

SUPERSEDING

MIL-PRF-19500/290J

3 July 2002

PERFORMANCE SPECIFICATION SHEET

SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N2904,

2N2904A, 2N2904AL, 2N2905, 2N2905A, AND 2N2905AL, JAN, JANTX, JANTXV, JANJ, JANS,

JANTXVM, JANTXVD, JANTXVR, JANTXVH, JANSM, JANSD, JANSR, AND JANSH

This specification is approved for use by all Departments

and Agencies of the Department of Defense.

* The requirements for acquiring the product described herein shall consist of

this specification sheet and MIL-PRF-19500.

1. SCOPE

1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five

levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Provision for radiation

hardness assurance (RHA) to four radiation test levels is provided for JANTXV and JANS product assurance levels for

type 2N2905A. RHA level designators "M", "D", "R", and "H" are appended to the device prefix to identify devices

which have passed RHA requirements.

1.2 Physical dimensions. See figure 1 herein (similar to TO-39).

* 1.3 Maximum ratings.

Types

PT = (1)

TA =

+25°C

PT = (2)

TC =

+25°C

VCBO

VCEO

VEBO

IC

TSTG and TJ

RθJA

RθJC

2N2904 (1)

2N2905 (1)

2N2904A, (2)

2N2905A, (2)

2N2904AL, (2)

2N2905AL (2)

W

0.8

W

3.0

V dc

60

V dc

40

60

V dc

5

mA dc

600

°C

-65 to +200

°C/W

175

°C/W

50

(1) For derating see figures 2 and 3.

(2) For derating see figures 4 and 5.

* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus, ATTN:

DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to Semiconductor@dscc.dla.mil. Since contact information

can change, you may want to verify the currency of this address information using the ASSIST Online database at

www.dodssp.daps.mil.

AMSC N/A FSC 5961

MIL-PRF-19500/290K

2

1.4 Primary electrical characteristics at TA = +25°C.

hFE at VCE = 10 V dc

hFE1

hFE2

hFE3

hFE4 (1)

hFE5 (1)

IC = 0.1 mA dc

IC = 1 mA dc

IC = 10 mA dc

IC = 150 mA dc

IC = 500 mA dc

Min

Max

2N2904

20

2N2904

25

175

2N2904

35

2N2904

40

120

2N2904

20

Min

Max

2N2905

35

2N2905

50

450

2N2905

75

2N2905

100

300

2N2905

30

Min

Max

2N2904A

2N2904AL

40

2N2904A

2N2904AL

40

175

2N2904A

2N2904AL

40

2N2904A

2N2904AL

40

120

2N2904A

2N2904AL

40

Min

Max

2N2905A

2N2905AL

75

2N2905A

2N2905AL

100

450

2N2905A

2N2905AL

100

2N2905A

2N2905AL

100

300

2N2905A

2N2905AL

50

(1) Pulsed (see 4.5.1).

Types

|hfe|

Cobo

Switching

2N2904

2N2904A

2N2904AL

2N2905

2N2905A

2N2905AL

f = 100 MHz

VCE = 20 V dc

IC = 50 mA dc

100 kHz ≤ f ≤ 1 MHz

VCB = 10 V dc

IE = 0

ton

(see figure

2)

toff

(see figure

3)

Min

Max

2.0

pF

8

ns

45

ns

300

MIL-PRF-19500/290K

3

Dimensions

Symbol

Inches

Millimeters

Notes

Min

Max

Min

Max

CD

.305

.335

7.75

8.51

CH

.240

.260

6.10

6.60

HD

.335

.370

8.51

9.40

LC

.200 TP

5.08 TP

6

LD

.016

.021

0.41

0.53

7, 8

LL

.500

.750

12.70

19.05

7, 8, 12

LU

.016

.019

.041

0.48

7, 8

L1

.050

1.27

7, 8

L2

.250

6.35

7, 8

P

.100

2.54

Q

.050

1.27

5

TL

.029

.045

0.74

1.14

4

TW

.028

.034

0.71

0.86

3

r

.010

0.25

10

α

45° TP

6

NOTES:

1. Dimension are in inches.

2. Millimeters are given for general information only.

3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).

4. Dimension TL measured from maximum HD.

5. Body contour optional within zone defined by HD, CD, and Q.

6. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007

inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.

The device may be measured by direct methods.

7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and L minimum. Diameter is

uncontrolled in L1 and beyond LL minimum.

8. All three leads.

9. The collector shall be internally connected to the case.

10. Dimension r (radius) applies to both inside corners of tab.

11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.

12. For "L" suffix devices, dimension LL is 1.50 (38.10 mm) minimum, 1.75 (19.05 mm) maximum.

13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.

* FIGURE 1. Physical dimensions (similar to TO-39).

MIL-PRF-19500/290K

4

2. APPLICABLE DOCUMENTS

* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500 - Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750 - Test Methods for Semiconductor Devices.

(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or www.dodssp.dap.mil

or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA

19111-5094.)

2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited

herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws

and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figure 1 herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I herein.

3.6 Electrical test requirements. The electrical test requirements shall be as specified in tables I, II, and III.

3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

MIL-PRF-19500/290K

5

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and table I, II, and III.).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified

herein

* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein shall be performed by the first inspection lot of this revision to

maintain qualification.

* 4.2.2 JANJ devices. For JANJ level, 3.3.1 through 3.3.1.3 of MIL-PRF-19500 shall apply, except as modified

herein. Supplier imposed requirements as well as alternate screens, procedures, and/or process controls shall be

documented in the quality management (QM) plan and must be submitted to the qualifying activity for approval.

When alternate screens, procedures, and/or process controls are used in lieu of the JANJ screens herein,

equivalency shall be proven and documented in the QM plan. Radiation characterization may be submitted in the QM

plan at the option of the manufacturer, however, 3.3.1.1 of MIL-PRF-19500 is not required. Lot formation and

conformance inspection requirements for JANJ shall be those used for JANTXV devices as a minimum. Die lot

controls and rework requirements shall be in accordance with 3.13 and D.3.13.2.1 of MIL-PRF-19500.

4.2.2.1 JANJ qualification. For JANJ qualification, 4.4.2.2 herein shall be performed as required by the qualifying

activity.

MIL-PRF-19500/290K

6

4.3 Screening (JANTX, JANTXV, JANJ, and JANS levels only). Screening shall be in accordance with table IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Measurement

Screen (see table IV of

MIL-PRF-19500)

JANS level

JANJ level

1b

Required

2

Optional

3a

3b

(1) 3c

Required

Not applicable

Required (see 4.3.2)

Required

Not applicable

Required (see 4.3.2)

4

Required

Optional

5

Required

Required (one pass minimum)

6

Not applicable

7

Optional

8

Required

Not required (Bin and cell)

9

ICBO2, hFE4

10

24 hours minimum

11

ICBO2; hFE4;

∆ICBO2 = 100 percent of initial value or

5 nA dc, whichever is greater.

∆hFE4 = ± 15 percent.

ICBO2; hFE4;

∆ICBO2 = 100 percent of initial value or

5 nA dc, whichever is greater.

∆hFE4 = ± 15 percent.

12

See 4.3.1, 240 hours minimum

See 4.3.1, 160 hours minimum

13

Subgroups 2 and 3 of table I herein;

∆ICBO2= 100 percent of initial value or

5 nA dc, whichever is greater.

∆hFE4 = ± 15 percent.

Subgroups 2 and 3 of table I herein;

∆ICBO2 = 100 percent of initial value or

5 nA dc, whichever is greater.

∆hFE4 = ± 15 percent.

14a and 14b

Required

15

Required

Required - Attributes data only, film or

non-film techniques may be utilized.

16

Required

See notes at end of paragraph.

MIL-PRF-19500/290K

7

4.3 Screening (JANTX, JANTXV, JANJ, and JANS levels only) - Continued.

Screen (see table IV

of MIL-PRF-19500)

Measurement

JANTXV and JANTX level

1b

Required (JANTXV only)

2

Not required

3a

3b

(1) 3c

Required

Not applicable

Required (see 4.3.2)

4

Optional

5

Not required

6

Not applicable

7a and 7b

Optional

8

Not required

9

Not applicable

10

24 hours minimum

11

ICBO2; hFE4

12

See 4.3.1,

80 hours minimum

13

Subgroup 2 of table I herein;

∆ICBO2= 100 percent of initial value or

5 nA dc, whichever is greater.

∆hFE4 = ± 15 percent.

14a and 14b

Required

15 and 16

Not required

(1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed

in accordance with MIL-PRF-19500, screen 3 prior to this thermal test.

MIL-PRF-19500/290K

8

* 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc, power shall be

applied to the device to achieve a junction temperature, TJ = +135°C minimum using a minimum PD = 75 percent of

PT maximum TA ambient rated as defined in 1.3.

* 4.3.2 Thermal impedance (ZθJX measurements). See figures 6 and 7. The ZθJX measurements shall be

performed in accordance with method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH,

tH, tMD (and VC where appropriate). The ZθJX limit used in screen 3c of 4.3 herein shall comply with the thermal

impedance graph in figure n (less than or equal to the curve value at the same tH time) and/or shall be less than the

process determined statistical maximum limit as outlined in method 3131.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of table I, group A1 and group A2 inspection only (table VIb,

group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with

4.4.2 herein).

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500

and table I herein. Group A inspection for JANJ shall be in accordance with JANTXV of MIL-PRF-19500 and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)

and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein. See 4.4.2.2 for JAN,

JANTX, JANTXV, and JANJ group B testing. Electrical measurements (end-points) and delta requirements for JAN,

JANTX, JANTXV, and JANJ shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2

and 4.5.3 herein.

* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.

Subgroup Method Condition

B4 1037 VCB = 10 dc.

B5 1027 VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure

occurs, resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum sample size in accordance with table VIa of

MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjusted TA or PD to achieve a

T

J = +225°C minimum.

MIL-PRF-19500/290K

9

* 4.4.2.2 Group B inspection (JAN, JANTX, JANTXV and JANJ). Separate samples may be used for each step. In

the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In addition, all catastrophic

failures during conformance inspection shall be analyzed to the extent possible to identify root cause and corrective

action.

Step Method Condition

1 1039 Steady-state life: Test condition B, 1,000 hours, VCB = 10 V dc, power shall be

applied to achieve a junction temperature of TJ = +150°C minimum. A minimum of 75

percent of rated power shall be dissipated. No heat sink or forced-air cooling on

devices shall be permitted. n = 45, c = 0.

2 1039 HTRB: Test condition A, 48 hours minimum. n = 45 devices, c = 0.

3 1032 High-temperature life (non-operating), t = 340 hours, TA = +200°C, n = 22, c = 0.

4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following

requirements.

a. For JAN, JANTX, JANTXV, and JANJ samples shall be selected randomly from a minimum of three wafers (or

from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot.

See MIL-PRF-19500.

b. Must be chosen from an inspection lot that has been submitted to and passed table I, subgroup 2,

conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high

temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, JANTXV

and JANJ) may be pulled prior to the application of final lead finish.

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, JANTXV, and

JANJ) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in

accordance with table I, subgroup 2 and 4.5.3 herein.

4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E.

C6 1027 Steady-state life: Test condition B, 1,000 hours, VCB = 10 V dc, power shall be

applied to achieve a junction temperature of TJ = +150°C minimum. A minimum of

75 percent of rated power PT shall be dissipated. No heat sink or forced- air-cooling

on devices shall be permitted.

4.4.3.2 Group C inspection, table VII (JAN, JANTX, JANTXV, and JANJ) of MIL-PRF-19500.

Subgroup Method Condition

C2 2036 Test condition E.

C5 3131 RθJA (see 1.3).

C6 Not applicable.

MIL-PRF-19500/290K

10

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes table I tests for conformance inspection. Testing of a subgroup using a single device type

enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.

4.4.4 Group D inspection. Quality conformance inspection for hardness assured JANS and JANTXV types shall

include the group D tests specified in table II. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750 for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable.

* 4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table III herein. Electrical

measurements (end-points) shall be in accordance with table I, subgroup 2 herein.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except

the output capacitor shall be omitted.

4.5.3 Delta requirements. Delta requirements shall be as specified below:

Step

Inspection

MIL-STD-750

Symbol

Limit

Method Conditions

1.

Collector-base cutoff

current

3036

Bias condition D,

VCB = 50 V dc

∆ICB02 (1)

100 percent of initial value

or ± 8 nA dc, whichever is

greater.

2. Forward current transfer

ratio

3076 VCE = 10 V dc;

IC = 150 mA dc;

pulsed see 4.5.1

∆hFE4 (1) ± 25 percent change from

initial reading.

(1) Devices which exceed the table I limits for this test shall not be accepted.

MIL-PRF-19500/290K

11

* TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1 2/

Visual and mechanical

inspection 3/

2071

n = 45 devices, c = 0

Solderability 3/ 4/

2026 n = 15 leads, c = 0

Resistance to solvents

3/ 4/ 5/

1022 n = 15 devices, c = 0

Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22

devices, c = 0

Hermetic seal 4/

Fine leak

Gross leak

1071 n = 22 devices, c = 0

Electrical measurements 4/

Table I, subgroup 2

Bond strength 3/ 4/

2037 Precondition TA = +250°C at

t = 24 hours or TA = +300°C at

t = 2 hours, n = 11 wires, c = 0

Decap internal visual

(design verification)

2075

n = 4 devices, c = 0

Subgroup 2

Thermal impedance

Collector to base, cutoff

current

3101

3036

See 4.3.2

VCB = 60 V dc

ZθJX

ICBO1

10

°C/W

µA dc

Emitter to base, cutoff

current

3061 VBE = 5 V dc IEBO1 10

µA dc

Breakdown voltage,

collector to emitter

2N2904, 2N2905

2N2904A, 2N2905A

2N2904AL, 2N2905AL

3011 Bias condition D; IC = 10 mA dc,

pulsed (see 4.5.1)

V(BR)CEO

40

60

V dc

Vdc

Collector to base cutoff

current

2N2904, 2N2905

2N2904A, 2N2905A

2N2904AL, 2N2905AL

3036 Bias condition D; VCB = 50 V dc ICBO2

20

10

nA dc

Emitter to base

cutoff current

3061 Bias condition D; VEB = 3.5 V dc IEBO2 50 nA dc

See footnotes at end of table.

MIL-PRF-19500/290K

12

* TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 2 - Continued

Collector to emitter cutoff

current

2N2904, 2N2905

3041

Bias condition C

VCE = 40 V dc

ICES

1

µA dc

2N2904A, 2N2904AL VCE = 60 V dc

2N2905A, 2N2905AL VCE = 60 V dc

Forward current transfer

ratio

2N2904

2N2905

2N2904A, 2N2904AL

2N2905A, 2N2905AL

3076 VCE = 10 V dc, IC = 0.1 mA dc hFE1

20

35

40

75

Forward current transfer

ratio

2N2904

2N2905

2N2904A, 2N2904AL

2N2905A, 2N2905AL

3076

VCE = 10 V dc, IC = 1.0 mA dc

hFE2

25

50

40

100

175

450

175

450

Forward current transfer

ratio

2N2904

2N2905

2N2904A, 2N2904AL

2N2905A, 2N2905AL

3076 VCE = 10 V dc, IC = 10 mA dc hFE3

35

75

40

100

Forward current transfer

ratio

2N2904

2N2904A, 2N2904AL

2N2905

2N2905A, 2N2905AL

3076 VCE = 10 V dc, IC = 150 mA dc,

pulsed (see 4.5.1)

hFE4

40

100

120

300

Forward current transfer

ratio

2N2904

2N2905

2N2904A, 2N2904AL

2N2905A, 2N2905AL

3076 VCE = 10 V dc, IC = 500 mA dc,

pulsed (see 4.5.1)

hFE5

20

30

40

50

See footnotes at end of table.

MIL-PRF-19500/290K

13

* TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 2 - Continued

Collector to emitter voltage

(saturated)

3071

IC = 150 mA dc, IB = 15 mA dc,

pulsed (see 4.5.1)

VCE(sat)1

0.4

V dc

Collector to emitter

voltage (saturated)

3071

IC = 500 mA dc, IB = 50 mA dc,

pulsed (see 4.5.1)

VCE(sat)2 1.6 V dc

Base emitter voltage

(saturated)

3066 Test condition A, IC = 150 mA dc, I

B = 15 mA dc, pulsed (see 4.5.1)

VBE(sat)1 1.3 V dc

Base emitter voltage

(saturated)

3066 Test condition A, IC = 500 mA dc, I

B = 50 mA dc, pulsed (see 4.5.1)

VBE(sat)2 2.6 V dc

Subgroup 3

High temperature

operation:

TA = +150°C

Collector to base

cutoff current

2N2904, 2N2905

2N2904A, 2N2904AL

2N2905A, 2N2905AL

3036 Bias condition D, VCB = 50 V dc ICBO3

20

10

µA dc

Low temperature

operation:

TA = -55°C

Forward current

transfer ratio

2N2904

2N2905

2N2904A, 2N2904AL

2N2905A, 2N2905AL

3076 VCE = 10 V dc, IC = 1.0 mA dc hFE6

15

30

20

50

See footnotes at end of table.

MIL-PRF-19500/290K

14

* TABLE I. Group A inspection - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 4

Small-signal short-circuit

forward-current transfer

ratio

2N2904

2N2905

2N2904A, 2N2904AL

2N2905A, 2N2905AL

3206

VCE = 10 V dc, IC = 1 mA dc,

f = 1 kHz

hfe

25

50

40

100

Small-signal short-circuit

forward-current transfer

ratio

3306 VCE = 20 V dc, IC = 50 mA dc,

f = 100 MHz

|hfe| 2.0

Open circuit output

capacitance

3236 VCB = 10 V dc, IE = 0,

100 kHz ≤ f ≤ 1 MHz

Cobo 8 pF

Input capacitance

(output open-circuited)

3240 VEB = 2.0 V dc, IC = 0,

100 kHz ≤ f ≤ 1 MHz (see

4.5.2)

Cibo 30 pF

Turn-on time

(See figure 8)

ton

45

ns

Turn-off time

(See figure 9) toff 300 ns

Subgroups 5 and 6

Not applicable

1/ For sampling plan see MIL-PRF-19500.

2/ For resubmission of failed subgroup 1, double the sample size of the failed test or sequence of tests. A failure in

table I, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon

submission.

3/ Separate samples may be used.

4/ Not required for JANS devices.

5/ Not required for laser marked devices.

MIL-PRF-19500/290K

15

TABLE II. Group D inspection and end-point limits.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1

Neutron irradiation

1017

Collector to base cutoff

current

M2N2905A, D2N2905A,

R2N2905A, H2N2905A

3036 Bias condition D

VCB = 50 V dc

ICBO2

10

nA dc

Forward current transfer

ratio

M2N2905A

D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc; IC = 0.1 mA dc hFE1

61

59

31

5

Forward current transfer

ratio

M2N2905A

D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc, IC = 1.0 mA dc hFE2

89

82

53

12

450

Forward current transfer

ratio

M2N2905A

D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc, IC = 10 mA dc,

pulsed (see 4.5.1)

hFE3

90

87

81

22

Forward current transfer

ratio

M2N2905A

D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc, IC = 150 mA dc hFE4

84

80

58

28

Forward current transfer

ratio

M2N2905A

D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc, IC = 50 mA dc hFE5

45

40

20

See footnote at end of table.

MIL-PRF-19500/290K

16

TABLE II. Group D inspection and end-point limits - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1 - Continued

Collector to emitter voltage

(saturated)

M2N2905A, D2N2905A,

R2N2905A, H2N2905A

3071

IC = 150 mA dc, IB = 15 mA dc,

pulsed (see 4.5.1)

VCE(sat)1

0.44

V dc

Collector to emitter voltage

(saturated)

M2N2905A, D2N2905A,

R2N2905A, H2N2905A

3071 IC = 500 mA dc, IB = 50 mA dc,

pulsed (see 4.5.1)

VCE(sat)2

1.75

V dc

Subgroup 2

Steady-state total dose

irradiation

1019

Collector to base

cutoff current

M2N2905A, D2N2905A

R2N2905A, H2N2905A

3036 Bias condition D; VCB = 50 V dc ICBO2

10

nA dc

Forward current transfer

ratio

M2N2905A, D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc, IC = 0.1 mA dc hFE1

75

25

Forward current transfer

ratio

M2N2905A

D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc, IC = 1.0 mA dc hFE2

89

82

43

13

450

Forward current transfer

ratio

M2N2905A

D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc, IC = 10 mA dc hFE3

90

87

57

32

See footnote at end of table.

MIL-PRF-19500/290K

17

TABLE II. Group D inspection and end-point limits - Continued.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 2 - Continued

Forward current transfer

ratio

M2N2905A

D2N2905A

R2N2905A

H2N2905A

3076

VCE = 10 V dc, IC = 150 mA dc,

pulsed (see 4.5.1)

hFE4

84

81

58

48

Forward current transfer

ratio

M2N2905A, D2N2905A

R2N2905A

H2N2905A

3076 VCE = 10 V dc, IC = 500 mA dc,

pulsed (see 4.5.1)

hFE5

50

40

24

Collector to emitter

voltage (saturated)

M2N2905A, D2N2905A

R2N2905A

H2N2905A

3071 IC = 150 mA dc; IB = 15 mA dc,

pulsed (see 4.5.1)

VCE(sat)1

0.44

0.50

V dc

Collector to emitter

voltage (saturated)

M2N2905A, D2N2905A

R2N2905A

H2N2905A

3071 IC = 500 mA dc; IB = 50 mA dc,

pulsed (see 4.5.1)

VCE(sat)2

1.75

2.2

2.5

V dc

1/ For sampling plan, see MIL-PRF-19500.

MIL-PRF-19500/290K

18

* TABLE III. Group E inspection (all quality levels) - for qualification only.

Inspection

MIL-STD-750

Qualification

Method

Conditions

Subgroup 1

Temperature cycling

(air to air)

Hermetic seal

Fine leak

Gross leak

Electrical measurements

Subgroup 2

Intermittent life

Electrical measurements

1051

1071

1037

Test condition C, 500 cycles

See table I, subgroup 2 and 4.5.3 herein.

VCB = 10 V dc, 6,000 cycles

See table I, subgroup 2 and 4.5.3 herein.

45 devices

c = 0

45 devices

c = 0

Subgroup 3

Destructive physical analysis

(DPA)

2102

3 devices

c = 0

Subgroup 4

15 devices,

c = 0

Thermal impedance, thermal

resistance curves

Each supplier shall submit their (typical) maximum

design thermal impedance curves. In addition, optimal

test conditions and ZθJX limit shall be provided to the

qualifying activity in the qualification report.

Sample size

N/A

Subgroup 5

Not applicable

Subgroup 6

ESD

1020

3 devices

c = 0

Subgroup 8

45 devices

c = 0

Reverse stability 1033 Condition A for devices ≥ 400 V, condition B for devices

≤ 400 V.

MIL-PRF-19500/290K

19

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

25 50 75 100 125 150 175 200 225

(Ambient) Tsink (ºC)

DC Operation Maximum Rating (W)

TA=25°C 2N2904, 2N2905

Note: Max Finish-Alloy Temp = 175.0ºC

Constant Tj Derating SOA Curves

DC Operation

Thermal Resistance Junction to Ambient = 175ºC/W

Redline (Dashed)

Per Para 1.3

Derate to 150C

Derate to 125C

Derate to 110C

Legend

(Top to Bottom)

NOTES:

1

/ Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance value.

All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will intersect

the appropriate power for the desired maximum TJ allowed.

2/ Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3)

3/ Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.

4/ Derate design curve chosen at TJ ≤ +125°C and +110°C, to show power rating where most users want to limit TJ

in their application.

* FIGURE 2. Derating for 2N2904, 2N2905, (RθJA) PCB (TO-39).

MIL-PRF-19500/290K

20

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

25 50 75 100 125 150 175 200 225

(Ambient) Tsink (ºC)

DC Operation Maximum Rating (W)

TA=25°C 2N2904A, 2N2905A, 2N2904AL, 2N2905AL

Note: Max Finish-Alloy Temp = 175.0ºC

Constant Tj Derating SOA Curves

DC Operation

Thermal Resistance Junction to Ambient = 175ºC/W

Redline (Dashed)

Per Para 1.3

Derate to 150C

Derate to 125C

Derate to 110C

Legend

(Top to Bottom)

NOTES:

1

/ Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance

value. All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will

intersect the appropriate power for the desired maximum TJ allowed.

2/ Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3)

3/ Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.

4/ Derate design curve chosen at TJ ≤ +125°C and +110°C, to show power rating where most users want to limit

T

J in their application.

* FIGURE 3. Derating for 2N2904A, 2N2904AL, 2N2905A, 2N2905AL, (RθJA) PCB (TO-39).

MIL-PRF-19500/290K

21

0

0.5

1

1.5

2

2.5

3

3.5

25 50 75 100 125 150 175 200 225

(Case) Tsink (ºC)

DC Operation Maximum Rating (W)

TC=25°C 2N2904, 2N2905

Note: Max Finish-Alloy Temp = 175.0ºC

Constant Tj Derating SOA Curves

DC Operation

Thermal Resistance Junction to Case = 50.0ºC/W

Redline (Dashed)

Per Para 1.3

Derate to 150C

Derate to 125C

Derate to 110C

Legend

(Top to Bottom)

NOTES:

1

/ Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance

value. All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will

intersect the appropriate power for the desired maximum TJ allowed.

2/ Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3)

3/ Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.

4/ Derate design curve chosen at TJ ≤ +125°C and +110°C, to show power rating where most users want to limit

T

J in their application.

* FIGURE 4. Derating for 2N2904, 2N2905, (RθJC) PCB (TO-39).

MIL-PRF-19500/290K

22

0

0.5

1

1.5

2

2.5

3

3.5

25 50 75 100 125 150 175 200 225

(Case) Tsink (ºC)

DC Operation Maximum Rating (W)

TC=25°C 2N2904A, 2N2905A, 2N2904AL, 2N2905AL

Note: Max Finish-Alloy Temp = 175.0ºC

Constant Tj Derating SOA Curves

DC Operation

Thermal Resistance Junction to Case = 50.0ºC/W

Redline (Dashed)

Per Para 1.3

Derate to 150C

Derate to 125C

Derate to 110C

Legend

(Top to Bottom)

NOTES:

1

/ Maximum theoretical derate design curve. This is the true inverse of the worst case thermal resistance

value. All devices are capable of operating at ≤ TJ specified on this curve. Any parallel line to this curve will

intersect the appropriate power for the desired maximum TJ allowed.

2/ Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3)

3/ Derate design curve chosen at TJ ≤ +150°C, where the maximum temperature of electrical test is performed.

4/ Derate design curve chosen at TJ ≤ +125°C and +110°C, to show power rating where most users want to limit

T

J in their application.

* FIGURE 5. Derating for 2N2904A, 2N2904AL, 2N2905A, 2N2905AL, (RθJC) PCB (TO-39).

MIL-PRF-19500/290K

23

Maximum Thermal Impedance

1

10

100

1000

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 10000

Time (s)

Theta (C/W)

Ambient free air cooled TA = +25°C, 800mW, thermal resistance RθJA = 175°C/W.

* FIGURE 6. Thermal impedance graph (RθJA) for all 2N2904, and 2N2905 devices (TO-39).

MIL-PRF-19500/290K

24

Maximum Thermal Impedance

1

10

100

0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100

Time (s)

Theta (C/W)

Ambient Case Mounted TC = +25°C, thermal resistance RθJC = 50°C/W.

* FIGURE 7. Thermal impedance graph (RθJC) for all 2N2904, and 2N2905 devices (TO-39).

MIL-PRF-19500/290K

25

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the

generator source impedance shall be 50 Ω.

2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 12 pF, rise time ≤ 5 ns.

* FIGURE 8. Saturated turn-on switching time test circuit.

NOTES:

1. The rise time (tr) of the applied pulse shall be ≤ 2.0 ns, duty cycle ≤ 2 percent, and the

generator source impedance shall be 50Ω.

2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 12 pF, rise time ≤ 5 ns.

* FIGURE 9. Saturated turn-off switching time test circuit.

MIL-PRF-19500/290K

26

5. PACKAGING

* 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or

order (see 6.2). When actual packaging of materiel is to be performed by DoD or in-house contractor personnel,

these personnel need to contact the responsible packaging activity to ascertain packaging requirements. Packaging

requirements are maintained by the Inventory Control Point's packaging activities within the Military Service or

Defense Agency, or within the Military Service’s system commands. Packaging data retrieval is available from the

managing Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting

the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)

6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.

* 6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of this specification.

b. Packaging requirements (see 5.1).

c. Lead finish (see 3.4.1).

d. Product assurance level and type designator.

6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which

are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML No. 19500) whether

or not such products have actually been so listed by that date. The attention of the contractors is called to these

requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal

Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the

products covered by this specification. Information pertaining to qualification of products may be obtained from

Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000 or e-mail

vqe.chief@dla.mil.

6.4 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where

changes from the previous issue were made. This was done as a convenience only and the Government assumes no

liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the

requirements of this document based on the entire content irrespective of the marginal notations and relationship to

the last previous issue.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 11 (Project 5961-2792)

DLA - CC

Review activities:

Army - AR, MI, SM

Navy - AS, MC

Air Force - 19, 99

* NOTE: The activities listed above were interested in this document as of the date of this document. Since

organizations and responsibilities can change, you should verify the currency of the information above using the

ASSIST Online database at www.dodssp.daps.mil .