Silicon RF Power Semiconductors
RA07M1317M
RoHS Compliance , 135-175MHz
6.5W
7.2V, 2 Stage Amp. For PORTABLE RADIO
RA07M1317M 30 Jun 2010
1/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA07M1317M is a 6.5-watt RF MOSFET Amplifier
Module for 7.2-volt portable radios that operate in the 135- to
175-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The output
power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and
drain current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
VGG=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the output
power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=7.2V, VGG=0V)
• Pout>6.5W @ VDD=7.2V, VGG=3.5V, Pin=20mW
• ηT>45% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW
• Broadband Frequency Range: 135-175MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=3.5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
RoHS COMPLIANCE
• RA07M1317M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the
lead in electronic Ceramic parts.
How ever,it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and
fluorescent tubes.
2.Lead in electronic Ceramic parts.
ORDERING INFORMATION:
ORDER NUMBER SUPPLY FORM
RA07M1317M-101 Antistatic tray,
50 modules/tray
BLOCK
DIAGRAM
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
3
2
4
1
5
PACKAGE CODE: H46S
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
RA07M1317M 30 Jun 2010
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ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(Tcase=+25°C, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS RATING UNIT
VDD Drain Voltage VGG<3.5V 9.2 V
VGG Gate Voltage VDD<7.2V, Pin=0mW 4 V
Pin Input Power 30 mW
Pout Output Power 10 W
Tcase(OP) Operation Case Temperature Range
f=135-175MHz,
ZG=ZL=50Ω -30 to +90 °C
Tstg Storage Temperature Range -40 to +110 °C
The above parameters are independently guaranteed.
ELECTRICAL CHARACTERISTICS
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
f Frequency Range 135 - 175 MHz
Pout Output Power VDD=7.2V,VGG=3.5V, Pin=20mW 6.5 - - W
ηT Total Efficiency 45 - - %
2fo 2
nd Harmonic - - -25 dBc
ρin Input VSWR - - 4:1 —
IGG Gate Current
Pout=6W (VGG control),
VDD=7.2V,
Pin=20mW - 1 - mA
— Stability VDD=4.0-9.2V, Pin=10-30mW, Pout<8W (VGG control),
Load VSWR=4:1 No parasitic oscillation —
— Load VSWR T olerance VDD=9.2V, Pin=20mW, Pout=7W (VGG control),
Load VSWR=20:1 No degradation or destroy —
All parameters, conditions, ratings, and limits are subject to change without notice.
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
RA07M1317M 30 Jun 2010
3/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFI CI E NCY, 2
nd
, 3
rd
HARMONICS versu s FREQUENCY
and INPUT VSWR versus FREQUENCY
OUTPUT POWER, POWER GAIN a n d OUTPUT POWER, POWER GAIN a nd
DRAIN CURRENT vers us INPUT POWER DRAIN CURRENT vers us INP UT POWER
OUTPUT POWER, POWER GAIN a n d
DRAIN CURRENT vers us INPUT POWER
0
1
2
3
4
5
6
7
8
9
10
125 135 145 155 165 175 185
F REQUENCY f (M Hz)
OUTPUT POWER P
out
(W)
INPUT VSWR
ρ
in
(-)
0
20
40
60
80
100
TOTAL EFFICIE NCY
η
T
(%)
VDD=7.2V
Pin=20mW
Pout @VGG=3.5V
η
T
@Pout=6W
ρ
in @Pout=6W
0
10
20
30
40
50
-15 -10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUT PUT POWER P
out
(dBm)
POWER GAIN Gp (dB)
0
1
2
3
4
5
DRA IN CURRE NT I
DD
(A)
f=135MHz
VDD=7.2V
VGG=3.5V
Pout
I
DD
Gp
0
10
20
30
40
50
-15 -10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUT PUT POWER P
out
(dBm)
POWER GAIN Gp (dB)
0
1
2
3
4
5
DRA IN CURRE NT
I
DD
(A)
f=165MHz
VDD=7.2V
VGG=3.5V
Pout
Gp
I
DD
-70
-60
-50
-40
-30
-20
125 135 145 155 165 175 185
FREQUENCY f (MHz)
HA RM O NICS (dBc )
VDD=7.2V
Pin=20m W
2nd @Pout=6W
3
rd
@Pout=6W
0
10
20
30
40
50
-15 -10 -5 0 5 10 15 20
INPUT POWER P
in
(dBm)
OUT PUT POWER P
out
(dBm)
POWER GAIN Gp (dB)
0
1
2
3
4
5
DRA IN CURRE NT I
DD
(A)
f=175MHz
VDD=7.2V
VGG=3.5V
Pout
Gp
I
DD
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
RA07M1317M 30 Jun 2010
4/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE
(Tcase=+25°C, ZG=ZL=50Ω, unless otherwise specified)
OUTPUT POWER and DRAI N CURRE NT OUTPUT POWER and DRAIN CURRENT
versus DRAIN V OLTAGE versus DRAIN V OLTAGE
OUTPUT POWER an d DRAIN CURRE NT
versus DRAIN VOLTAGE
OUTPUT POWER and DRAI N CURRE NT OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE versus GATE VOLTAGE
OUTPUT POWER an d DRAIN CURRE NT
versus GATE VOLTAGE
0
2
4
6
8
10
12
14
345678910
DRAIN VOLTAGE V
DD
(V)
OUT PUT POWER P
out
(W)
0
1
2
3
4
5
6
7
DRA IN CURRENT I
DD
(A)
P
out
f=135MHz
V
GG
=3.5V
P
in
=20mW
I
DD
0
1
2
3
4
5
6
7
8
9
10
1.5 2 2.5 3 3.5 4
GATE VOLTAGE V
GG
(V)
OUT PUT POWER P
out
(W)
0
1
2
3
4
5
DRA IN CURRENT I
DD
(A)
P
out
f=135MHz
V
DD
=7.2V
P
in
=20mW
I
DD
0
2
4
6
8
10
12
14
345678910
DRAIN VOLTAGE V
DD
(V)
OUT PUT POWER P
out
(W)
0
1
2
3
4
5
6
7
DRA IN CURRENT I
DD
(A)
P
out
f=165MHz
V
GG
=3.5V
P
in
=20mW
I
DD
0
2
4
6
8
10
12
14
345678910
DRAIN VOLTAGE V
DD
(V)
OUT PUT PO WER P
out
(W)
0
1
2
3
4
5
6
7
DRA IN CURRENT I
DD
(A)
P
out
f=175MHz
V
GG
=3.5V
P
in
=20mW
I
DD
0
1
2
3
4
5
6
7
8
9
10
1.522.533.54
GATE VOLTAGE V
GG
(V)
OUT PUT POWER P
out
(W)
0
1
2
3
4
5
DRA IN CURRENT I
DD
(A)
P
out
f=165MHz
V
DD
=7.2V
P
in
=20mW
I
DD
0
1
2
3
4
5
6
7
8
9
10
1.5 2 2.5 3 3.5 4
GATE VOLTAGE V
GG
(V)
OUT PUT PO WER P
out
(W)
0
1
2
3
4
5
DRA IN CURRE NT I
DD
(A)
P
out
f=175MHz
V
DD
=7.2V
P
in
=20mW
I
DD
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
RA07M1317M 30 Jun 2010
5/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTLINE
DRAWING
(
mm
)
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
RA07M1317M 30 Jun 2010
6/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
C1, C2: 4700pF, 22uF in parallel
Directional
Coupler Attenuator Power
Meter
Spectrum
Analyzer
Signal
Generator Attenuator
Pre-
amplifier
Power
Meter
Directional
Coupler
DUT 5
4
3
2
1
Z
G
=50
Ω
Z
L
=50Ω
C1 C2
- +
DC Power
Supply VGG
+ -
DC Power
Supply VDD
TEST BLOCK DIAGRAM
Attenuator
EQUIVALENT CIRCUIT
2 3
1
5
4
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
RA07M1317M 30 Jun 2010
7/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RECOMMENDATIONS, and APPLICATION INFORMATION:
Construction:
This module consists of an alumina substrate soldered onto a copper flange. For mechanical protection, a plastic
cap is attached with silicone. The MOSFET transistor chips are die bonded onto metal, wire bonded to the
substrate, and coated with resin. Lines on the substrate (eventually inductors), chip capacitors, and resistors form
the bias and matching circuits. Wire leads soldered onto the alumina substrate provide the DC and RF connection.
Following conditions must be avoided:
a) Bending forces on the alumina substrate (for example, by driving screws or from fast thermal changes)
b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)
c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichlorethylene)
d) Frequent on/off switching that causes thermal expansion of the resin
e) ESD, surge, overvoltage in combination with load VSWR, and oscillation
ESD:
This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.
Mounting:
Heat sink flatness must be less than 50 µm (a heat sink that is not flat or particles between module and heat sink
may cause the ceramic substrate in the module to crack by bending forces, either immediately when driving screws
or later when thermal expansion forces are added).
A thermal compound between module and heat sink is recommended for low thermal contact resistance and to
reduce the bending stress on the ceramic substrate caused by the temperature difference to the heat sink.
The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.
M2.6 screws are recommended with a tightening torque of 1.8 to 3.0kgf-cm.
Soldering and Defluxing:
This module is designed for manual soldering.
The lead (terminal) must be soldered after the module is screwed onto the heat sink.
The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.
Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause
bubbles in the coating of the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink:
At Pout=6.5W, VDD=7.2V and Pin=20mW each stage transistor operating conditions are:
Stage Pin
(W) Pout
(W) Rth(ch-case)
(°C/W) IDD @ ηT=45%
(A) VDD
(V)
1st 0.02 1.5 4.0 0.40
2nd 1.5 6.5 2.4 1.60 7.2
The channel temperatures of each stage transistor Tch = Tcase + (VDD x IDD - Pout + Pin) x Rth(ch-case) are:
Tch1 = Tcase + (7.2V x 0.40A – 1.5W + 0.02W) x 4.0°C/W = Tcase + 5.6 °C
Tch2 = Tcase + (7.2V x 1.60A – 6.5W + 1.5W) x 2.4°C/W = Tcase + 15.6 °C
For long-term reliability, it is best to keep the module case temperature (Tcase) below 90°C. For an ambient
temperature Tair=60°C and Pout=6.5W, the required thermal resistance Rth (case-air) = ( Tcase - Tair) / ( (Pout / ηT ) -
Pout + Pin ) of the heat sink, including the contact resistance, is:
Rth(case-air) = (90°C - 60°C) / (6.5W/45% – 6.5W + 0.02W) = 3.77 °C/W
When mounting the module with the thermal resistance of 3.77 °C/W, the channel temperature of each stage
transistor is:
Tch1 = Tair + 35.6 °C
Tch2 = Tair + 45.6 °C
The 175°C maximum rating for the channel temperature ensures application under derated conditions.
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
RA07M1317M 30 Jun 2010
8/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Output Power Control:
Depending on linearity, the following two methods are recommended to control the output power:
a) Non-linear FM modulation:
By the gate voltage (VGG). When the gate voltage is close to zero, the RF input signal is attenuated up to 60 dB
and only a small leakage current flows from the battery into the drain.
Around VGG=2.5V, the output power and drain current increases substantially.
Around VGG=3.0V (typical) to VGG=3.5V (maximum), the nominal output power becomes available.
b) Linear AM modulation:
By RF input power Pin. The gate voltage is used to set the drain’s quiescent current for the required linearity.
Oscillation:
To test RF characteristics, this module is put on a fixture with two bias decoupling capacitors each on gate and
drain, a 4.700 pF chip capacitor, located close to the module, and a 22 µF (or more) electrolytic capacitor.
When an amplifier circuit around this module shows oscillation, the following may be checked:
a) Do the bias decoupling capacitors have a low inductance pass to the case of the module?
b) Is the load impedance ZL=50Ω?
c) Is the source impedance ZG=50Ω?
Attention
1.High Temperature; This product might have a heat generation while operation,Please take notice that have a
possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off.
At the near the product,do not place the combustible material that have possibilities to arise the fire.
2. Generation of High Frequency Power; This product generate a high frequency power. Please take notice that do
not leakage the unnecessary electric wave and use this products without cause damage for human and property per
normal operation.
3. Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
PRECAUTION FOR THE USE OF MITSUBISHI SILICON RF POWER AMPLIFIER DEVICES:
1.The specifications of mention are not guarantee values in this data sheet. Please confirm additional details
regarding operation of these products from the formal specification sheet. For copies of the formal specification
sheets, please contact one of our sales offices.
2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals
and were not specifically designed for use in other applications. In particular, while these products are highly
reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is
sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements.
Examples of critical communications elements would include transmitters for base station applications and fixed
station applications that operate with long term continuous transmission and a higher on-off frequency during
transmitting, especially for systems that may have a high impact to society.
3.RA series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4.In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the case temperature for RA series products lower than 60deg/C under standard conditions, and
less than 90deg/C under extreme conditions.
5.RA series products are designed to operate into a nominal load impedance of 50 ohms. Under the condition of
operating into a severe high load VSWR approaching an open or short, an over load condition could occur. In the
worst case there is risk for burn out of the transistors and burning of other parts including the substrate in the
module.
6.The formal specification includes a guarantee against parasitic oscillation under a specified maximum load
mismatch condition. The inspection for parasitic oscillation is performed on a sample basis on our manufacturing
line. It is recommended that verification of no parasitic oscillation be performed at the completed equipment level
also.
7.For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8.Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any
way from it’s original form.
9.For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page of
this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
Silicon RF Power Semiconductors
RoHS COMPLIANCE RA07M1317M
RA07M1317M 30 Jun 2010
9/9
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs, with appropriate measures such as (i)
placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against
an
y
malfunction or misha
p
.
Keep safety first in your circuit designs !
- These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under
any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a
third party.
- Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms,
or circuit application examples contained in these materials.
- All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Mitsubishi Electric Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or
an authorized Mitsubishi Semiconductor product distributor for the latest product information before
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or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage,
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information contained herein.
- Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
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Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
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pp
roved destination.
Notes regarding these materials
