BSZ0902NS For OptiMOSTM Power-MOSFET Product Summary Features * Optimized for high performance Buck converter (Server,VGA) VDS * Very Low FOMQOSS for High Frequency SMPS RDS(on),max * Low FOMSW for High Frequency SMPS 30 V VGS=10 V 2.6 mW VGS=4.5 V 3.5 ID * Excellent gate charge x R DS(on) product (FOM) 40 A PG-TSDSON-8 (fused leads) * Very low on-resistance R DS(on) @ V GS=4.5 V * 100% avalanche tested * Superior thermal resistance * N-channel * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type Package Marking BSZ0902NS PG-TSDSON-8 (fused leads) 0902NS Maximum ratings, at T j=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 C 40 V GS=10 V, T C=100 C 40 V GS=4.5 V, T C=25 C 40 V GS=4.5 V, T C=100 C 40 V GS=4.5 V, T A=25 C, R thJA=60 K/W 19 Unit A Pulsed drain current2) I D,pulse T C=25 C 160 Avalanche current, single pulse3) I AS T C=25 C 20 Avalanche energy, single pulse E AS I D=20 A, R GS=25 W 70 mJ Gate source voltage V GS 20 V 1) J-STD20 and JESD22 See figure 3 for more detailed information 3) See figure 13 for more detailed information 2) Rev. 2.2 page 1 2013-05-13 BSZ0902NS Maximum ratings, at T j=25 C, unless otherwise specified Parameter P tot Operating and storage temperature Value Symbol Conditions T C=25 C 48 T A=25 C, R thJA=60 K/W 2.1 T j, T stg W -55 ... 150 IEC climatic category; DIN IEC 68-1 Parameter Unit C 55/150/56 Values Symbol Conditions Unit min. typ. max. - - 2.6 - - 60 Thermal characteristics Thermal resistance, junction - case R thJC Device on PCB R thJA 6 cm2 cooling area4) K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 30 - - Gate threshold voltage V GS(th) V DS=V GS, I D=250 A 1.2 - 2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 C - 0.1 1 V DS=30 V, V GS=0 V, T j=125 C - 10 100 V A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 10 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=20 A - 2.8 3.5 mW V GS=10 V, I D=20 A - 2.2 2.6 0.5 0.9 1.8 W 55 110 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=30 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2013-05-13 BSZ0902NS Parameter Values Symbol Conditions Unit min. typ. max. - 1700 2261 - 600 798 Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 88 - Turn-on delay time t d(on) - 4.2 - Rise time tr - 5.2 - Turn-off delay time t d(off) - 21 - Fall time tf - 3.6 - Gate to source charge Q gs - 4.4 5.9 Gate charge at threshold Q g(th) - 2.7 - Gate to drain charge Q gd - 4.0 5.2 Switching charge Q sw - 5.6 - Gate charge total Qg - 13 17 Gate plateau voltage V plateau - 2.6 - Gate charge total Qg V DD=15 V, I D=30 A, V GS=0 to 10 V - 26 35 Gate charge total, sync. FET Q g(sync) V DS=0.1 V, V GS=0 to 4.5 V - 11 - Output charge Q oss V DD=15 V, V GS=0 V - 16 21 - - 40 - - 160 V GS=0 V, V DS=15 V, f =1 MHz V DD=15 V, V GS=10 V, I D=30 A, R G,ext=1.6 W pF ns Gate Charge Characteristics5) V DD=15 V, I D=30 A, V GS=0 to 4.5 V nC V nC Reverse Diode Diode continuous forward current IS A T C=25 C Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=20 A, T j=25 C - 0.83 1 V Reverse recovery charge Q rr V R=15 V, I F=I S, di F/dt =400 A/s - 15 - nC 5) See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2013-05-13 BSZ0902NS 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C) parameter: V GS 50 45 40 10 V 4.5 V 40 35 30 ID [A] Ptot [W] 30 25 20 20 15 10 10 5 0 0 0 40 80 120 160 0 40 80 TC [C] 120 160 TC [C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 10 limited by on-state resistance 1 s 102 10 s 0.5 1 0.2 ZthJC [K/W] ID [A] 100 s 101 1 ms 0.1 0.05 0.1 10 ms 0.02 100 0.01 DC single pulse 10-1 0.01 10-1 100 101 102 VDS [V] Rev. 2.2 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-05-13 BSZ0902NS 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 C R DS(on)=f(I D); T j=25 C parameter: V GS parameter: V GS 6 160 5V 4.5 V 10 V 140 5 120 3.2 V 3.2 V RDS(on) [mW] 4 ID [A] 100 3V 80 3.5 V 4V 3 4.5 V 5V 7V 60 8V 10 V 2 2.8 V 40 1 20 0 0 0 1 2 0 3 10 20 VDS [V] 30 40 50 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 C parameter: T j 160 210 140 180 120 150 100 gfs [S] ID [A] 120 80 90 60 60 40 150 C 20 30 25 C 0 0 0 1 2 3 4 5 VGS [V] Rev. 2.2 0 40 80 120 160 ID [A] page 5 2013-05-13 BSZ0902NS 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=20 A; V GS=10 V V GS(th)=f(T j); V GS=V DS; I D=250 A 4 2.5 2 1.5 typ VGS(th) [V] RDS(on) [mW] 3 2 1 1 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [C] 60 100 140 180 Tj [C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 10000 Ciss 100 1000 Coss IF [A] C [pF] 103 25 C 150 C 102 101 Crss 10 100 1 10 0 5 10 15 20 25 30 VDS [V] Rev. 2.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD [V] page 6 2013-05-13 BSZ0902NS 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=30 A pulsed parameter: T j(start) parameter: V DD 100 12 15 V 10 6V 24 V 8 10 VGS [V] IAV [A] 25 C 100 C 6 125 C 4 2 1 0 1 10 100 1000 0 10 tAV [s] 20 30 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 34 V GS Qg 32 VBR(DSS) [V] 30 28 26 V gs(th) 24 Q g(th) 22 Q sw Q gs 20 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [C] Rev. 2.2 page 7 2013-05-13 BSZ0902NS Package Outline Rev. 2.2 PG-TSDSON-8 (fused leads) page 8 2013-05-13 BSZ0902NS Published by Infineon Technologies AG 81726 Munich, Germany (c) 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 9 2013-05-13