Order this document by 2N5630/D SEMICONDUCTOR TECHNICAL DATA . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. * High Collector Emitter Sustaining Voltage -- VCEO(sus) = 120 Vdc -- 2N5630, 2N6030 VCEO(sus) = 140 Vdc -- 2N5631, 2N6031 * High DC Current Gain -- @ IC = 8.0 Adc hFE = 20 (Min) -- 2N5630, 2N6030 hFE = 15 (Min) -- 2N5631, 2N6031 * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 100 -120 -140 VOLTS 200 WATTS MAXIMUM RATINGS (1) Rating Symbol Collector-Emitter Voltage VCEO VCB Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Peak Base Current -- Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 2N5630 2N6030 2N5631 2N6031 Unit 120 140 Vdc 140 Vdc 120 VEB IC 7.0 Vdc 16 20 Adc IB PD 5.0 Adc 200 1.14 Watts W/_C - 65 to + 200 _C TJ, Tstg CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS (1) Characteristic Symbol Max Unit JC 0.875 _C/W Thermal Resistance, Junction to Case (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 200 150 100 50 0 0 20 40 60 80 100 120 140 TC, TEMPERATURE (C) 160 180 200 Figure 1. Power Derating Safe Area Curves are indicated by Figure 5. All Limits are applicable and must be observed. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III v w ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) VCEO(sus) 2N5630, 2N6030 2N5631, 2N6031 Collector-Emitter Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 70 Vdc, IB = 0) Vdc 120 140 -- ICEO mAdc 2N5630, 2N6030 2N5631, 2N6031 -- -- 2.0 2.0 -- -- 2.0 7.0 Collector-Emitter Cutoff Current (VCE = Rated VCB, VEB(off) = 1.5 Vdc) (VCE = Rated VCB, VEB(off) = 1.5 Vdc, TC = 150_C) ICEX mAdc Collector-Base Cutoff Current (VCB = Rated VCB, IE = 0) ICBO -- 2.0 mAdc Emitter-Base Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO -- 5.0 mAdc 20 15 4.0 80 60 -- -- -- 1.0 2.0 ON CHARACTERISTICS (1) DC Current Gain (IC = 8.0 Adc, VCE = 2.0 Vdc) hFE -- 2N5630, 2N6030 2N5631, 2N6031 All Types (IC = 16 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 16 Adc, IB = 4.0 Adc) VCE(sat) Vdc All Types Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) VBE(sat) -- 1.8 Vdc Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.5 Vdc fT 1.0 -- MHz Cob -- -- 500 1000 pF hfe 15 -- -- DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N5630, 31 2N6030, 31 Small-Signal Current Gain (IC = 4.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) fT = |hfe| * ftest 2.0%. VCC + 30 V 25 s SCOPE RB 0 51 D1 tr, tf 10 ns DUTY CYCLE = 1.0% -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA For PNP test circuit, reverse all polarities and D1. Figure 2. Switching Times Test Circuit 2 t, TIME ( s) RC +11 V - 9.0 V 3.0 2.0 TJ = 25C IC/IB = 10 VCE = 30 V 1.0 0.7 0.5 tr 0.3 0.2 td @ VBE(off) = 5.0 V 0.1 0.07 0.05 2N5629, 30, 31 2N6029, 30, 31 0.03 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 Figure 3. Turn-On Time Motorola Bipolar Power Transistor Device Data 20 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.5 0.2 0.2 0.1 0.1 P(pk) JC(t) = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.05 0.05 0.02 0.01 SINGLE PULSE 0.02 0.01 0.02 0.05 0.1 0.2 1.0 0.5 2.0 5.0 10 t, TIME (ms) 20 50 100 200 500 1000 2000 Figure 4. Thermal Response 20 1.0 ms IC, COLLECTOR CURRENT (AMP) 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 7.0 5.0 dc 3.0 50 ms TJ = 200C SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C 0.5 ms 2.0 1.0 0.7 0.5 CURVES APPLY BELOW RATED VCEO 0.3 0.2 2.0 3.0 v 2N5630, 2N6030 2N5631, 2N6031 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 Figure 5. Active-Region Safe Operating Area NPN 2N5630, 2N5631 PNP 2N6030, 2N6031 4.0 5.0 ts TJ = 25C IB1 = IB2 IC/IB = 10 VCE = 30 V 3.0 ts 2.0 2.0 t, TIME ( s) t, TIME ( s) 3.0 TJ = 25C IC/IB = 10 IB1 = IB2 VCE = 30 V 1.0 0.6 1.0 0.5 0.2 0.4 tf 0.7 tf 0.3 0.3 0.5 0.7 1.0 5.0 7.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 20 0.2 0.2 0.3 0.5 0.7 1.0 5.0 7.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 10 20 Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 3 NPN 2N5630, 2N5631 NPN 2N5630, 2N5631 1000 2000 TJ = 25C C, CAPACITANCE (pF) C, CAPACITANCE (pF) 700 500 Cib 300 200 TJ = 25C 1000 700 500 Cib 300 Cob 100 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 Cob 200 200 0.2 0.5 1.0 2.0 5.0 10 20 50 VR, REVERSE VOLTAGE (VOLTS) 100 200 Figure 7. Capacitance 500 500 TJ = 150C 25C 100 70 50 300 200 VCE = 2.0 V VCE = 10 V hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 300 200 - 55C 30 20 10 7.0 5.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 TJ = +150C + 25C 100 70 50 - 55C 30 20 10 7.0 5.0 0.2 0.3 20 VCE = 2.0 V VCE = 10 V 0.5 0.7 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 8. DC Current Gain 2.0 TJ = 25C 1.6 1.2 IC = 4.0 A 8.0 A 16 A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 5.0 2.0 TJ = 25C 1.6 1.2 IC = 4.0 A 8.0 A 16 A 0.8 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (AMP) 2.0 3.0 Figure 9. Collector Saturation Region 4 Motorola Bipolar Power Transistor Device Data 5.0 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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