Silicon Carbide Schottky Diode 1200 V, 20 A FFSP20120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. www.onsemi.com 1. Cathode 2. Anode Schottky Diode Features * * * * * * * Max Junction Temperature 175C Avalanche Rated 200 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb-Free, Halogen Free/BFR Free and RoHS Compliant Applications 1 2 TO-220-2LD CASE 340BB MARKING DIAGRAM * General Purpose * SMPS, Solar Inverter, UPS * Power Switching Circuits $Y&Z&3&K FFSP 15120A $Y &Z &3 &K FFSP15120A = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. (c) Semiconductor Components Industries, LLC, 2016 January, 2020 - Rev. 3 1 Publication Order Number: FFSP20120A/D FFSP20120A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Parameter Value Unit Peak Repetitive Reverse Voltage 1200 V Single Pulse Avalanche Energy (Note 1) 200 mJ Continuous Rectified Forward Current @ TC < 148C 20 A TC = 25C, 10 ms 1190 A TC = 150C, 10 ms 990 A Symbol VRRM EAS IF IF,Max Non-Repetitive Peak Forward Surge Current IF,SM Non-Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 135 A IF,RM Repetitive Forward Surge Current Half-Sine Pulse, tp = 8.3 ms 74 A PTOT Power Dissipation TC = 25C 340 W TC = 150C 57 W -55 to +175 C TJ, TSTG Operating and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. EAS of 200 mJ is based on starting TJ = 25C, L = 0.5 mH, IAS = 29 A, V = 150 V. THERMAL CHARACTERISTICS Symbol RqJC Parameter Thermal Resistance, Junction to Case, Max Value Unit 0.44 C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol VF IR QC C Parameter Min Typ Max Unit IF = 20 A, TC = 25C - 1.45 1.75 V IF = 20 A, TC = 125C - 1.7 2.0 IF = 20 A, TC = 175C - 2.0 2.4 VR = 1200 V, TC = 25C - - 200 VR = 1200 V, TC = 125C - - 300 VR = 1200 V, TC = 175C - - 400 Total Capacitive Charge V = 800 V - 120 - nC Total Capacitance VR = 1 V, f = 100 kHz - 1220 - pF VR = 400 V, f = 100 kHz - 111 - VR = 800 V, f = 100 kHz - 88 - Forward Voltage Reverse Current Test Condition mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Marking Package Packing Method Quantity FFSP20120A FFSP20120A TO-220-2LD Tube 50 Units www.onsemi.com 2 FFSP20120A TYPICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) 101 40 IR, Reverse Current (mA) IF, Forward Current (A) TJ = -55C TJ = 25C 30 TJ = 75C 20 TJ = 125C TJ = 175C 10 0 2 3 1 VF, Forward Voltage (V) 0 100 TJ = 175C 10-1 TJ = 125C 4 400 600 800 1000 VR, Reverse Voltage (V) 1200 250 IF, Peak Forward Current (A) IR, Reverse Current (mA) TJ = -55C Figure 2. Reverse Characteristics 1.0 TJ = -55C TJ = 25C 0.8 TJ = 75C 0.6 0.4 TJ = 125C TJ = 175C 0.2 0.0 1000 1100 1200 1300 1400 D = 0.1 200 D = 0.2 150 D = 0.3 100 D = 0.5 50 D = 0.7 0 1500 25 VR, Reverse Voltage (V) D=1 50 75 100 125 150 175 TC, Case Temperature (5C) Figure 4. Current Derating Figure 3. Reverse Characteristics 150 400 350 QC, Capacitive Charge (nC) PTOT, Power Dissipation (W) TJ = 25C 10-3 200 Figure 1. Forward Characteristics 300 250 200 150 100 50 0 TJ = 75C 10-2 25 50 75 100 125 150 125 100 75 50 25 0 0 175 200 400 600 800 1000 VR, Reverse Voltage (V) TC, Case Temperature (5C) Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse Voltage www.onsemi.com 3 FFSP20120A TYPICAL CHARACTERISTICS (Continued) (TJ = 25C unless otherwise noted) 50 EC, Capacitive Energy (mJ) Capacitance (pF) 5000 1000 100 50 0.1 1 10 100 40 30 20 10 0 1000 0 400 200 VR, Reverse Voltage (V) 600 800 1000 VR, Reverse Voltage (V) Figure 7. Capacitance vs. Reverse Voltage Figure 8. Capacitance Stored Energy 2 ZqJC, Normalized Thermal Impedance DUTY CIRCLE-DESCENDING ORDER 1 0.5 P DM 0.2 t1 0.1 0.02 0.01 0.1 t2 0.05 NOTES: ZqJC(t) = r(t) x RqJC RqJC = 0.44C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE 0.05 10-4 10-3 10-2 10-1 1 t, Rectangular Pulse Duration (s) Figure 9. Junction-to-Case Transient Thermal Response Curve TEST CIRCUIT AND WAVEFORMS L = 0.5 mH R < 0.1 W VDD = 50 V EAVL = 1/2LI2 [VR(AVL) / (VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L Q1 CURRENT SENSE DUT VAVL R + VDD IL IL I V VDD - t0 t1 Figure 10. Unclamped Inductive Switching Test Circuit & Waveform www.onsemi.com 4 t2 t MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-220-2LD CASE 340BB ISSUE O 4.09 3.50 0.36 M 10.67 9.65 A B A M B 3.43 2.54 7 3 5 3 1 2 8.89 6.86 1.40 0.51 16.51 14.22 9.40 8.38 DATE 31 AUG 2016 6.86 5.84 5 3 16.15 15.75 13.40 12.19 6.35 MAX 0.60 MAX C 14.73 13.60 1.65 1.25 1.91 0.61 0.33 2.54 5.08 2.92 2.03 1.02 0.38 0.36 M 5 3 5 3 4.80 4.30 DOCUMENT NUMBER: DESCRIPTION: 98AON13832G TO-220-2LD C A B NOTES: A. PACKAGE REFERENCE: JEDEC TO220,ISSUE K, VARIATION AC,DATED APRIL 2002. B. ALL DIMENSIONS ARE IN MILLIMETERS. C. DIMENSION AND TOLERANCE AS PER ASME Y14.5-2009. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. 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