1 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 M1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 10N100 10 A
12N100 12 A
IDM TC= 25°C, pulse width limited by TJM 10N100 40 A
12N100 48 A
PDTC= 25°C 300 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
MegaMOSTMFET
N-Channel Enhancement Mode
TO-204 AA (IXTM)
VDSS ID25 RDS(on)
IXTH / IXTM 10N100 1000 V 10 A 1.20
IXTH / IXTM 12N100 1000 V 12 A 1.05
G = Gate, D = Drain,
S = Source, TAB = Drain
G
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 3 mA 1000 V
VGS(th) VDS = VGS, ID = 250 µA 2 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = 0.8 • VDSS TJ = 25°C 250 µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 10N100 1.20
12N100 1.05
Pulse test, t 300 µs, duty cycle d 2 %
91540E(5/96)
Features
l
International standard packages
l
Low RDS (on) HDMOSTM process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
© 2000 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25, pulse test 6 1 2 S
Ciss 4000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 3 10 p F
Crss 70 pF
td(on) 21 50 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 33 50 ns
td(off) RG = 2 Ω, (External) 6 2 1 0 0 ns
tf32 50 ns
Qg(on) 150 170 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 30 45 nC
Qgd 55 80 nC
RthJC 0.42 K/W
RthCK 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 10N100 10 A
12N100 12 A
ISM Repetitive; 10N100 40 A
pulse width limited by TJM 12N100 48 A
VSD IF = IS, VGS = 0 V, 1. 5 V
Pulse test, t 300 µs, duty cycle d 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 1000 ns
IXTH 10 N100 IXTH 12 N100
IXTM 10 N100 IXTM 12 N100
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD (IXTH) Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Dim. Millimeter Inches
Min. Max. Min. Max.
A 6.4 11.4 .250 .450
A1 3.42 .135
b .97 1.09 .038 .043
D 22.22 .875
e 10.67 11.17 .420 .440
e1 5.21 5.71 .205 .225
L 7.93 .312
p 3.84 4.19 .151 .165
p1 3.84 4.19 .151 .165
q 30.15 BSC 1.187 BSC
R 13.33 .525
R1 4.77 .188
s 16.64 17.14 .655 .675
TO-204AA (IXTM) Outline
Pins 1 - Gate 2 - Source
Case - Drain
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
3 - 4
© 2000 IXYS All rights reserved
IXTH 10 N100 IXTH 12 N100
IXTM 10 N100 IXTM 12 N100
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
BV/V
G(th)
- Norm a lized
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 BVDSS
VGS(th)
TC - Degrees C
-50 -25 0 25 50 75 100 125 150
I
D
- Amperes
0
2
4
6
8
10
12
14
16
18
20
10N100
TJ - Degrees C
-50 -25 0 25 50 75 100 125 150
R
DS(on)
- Normalized
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
ID - Amperes
0 5 10 15 20 25
R
DS(on)
- Normalized
0.9
1.0
1.1
1.2
1.3
1.4
1.5
VGS = 10V
VGS - Volts
012345678910
I
D
- Amperes
0
2
4
6
8
10
12
14
16
18
20
VDS - Vo lts
0 5 10 15 20
I
D
- Amperes
0
2
4
6
8
10
12
14
16
18
20
6V
7V
VGS = 10V
12N100
ID = 6A
VGS = 15V
5V
TJ = 25°C
TJ = 25°C
TJ = 25°C
Fig. 1 Output Characteristics Fig. 2 Input Admittance
Fig. 3 RDS(on) vs. Drain Current Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs. Fig. 6 Temperature Dependence of
Case Temperature Breakdown and Threshold Voltage
4 - 4
© 2000 IXYS All rights reserved
IXTH 10 N100 IXTH 12 N100
IXTM 10 N100 IXTM 12 N100
Fig.7 Gate Charge Characteristic Curve Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves Fig.10 Source Current vs. Source
to Drain Voltage
VDS - Vo l t s
1 10 100 1000
I
D
- Amperes
0.1
1
10
Gate Charge - nCoulombs
0 255075100125150
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
VSD - Volts
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
I
D
- Amperes
0
2
4
6
8
10
12
14
16
18
20
VDS - Volts
0 5 10 15 20
Capacitance - pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001 0.0001 0.001 0.01 0.1 1 10
Thermal Response - K/W
0.001
0.01
0.1
1
D=0.5
Crss
Coss
10µs
100µs
1ms
10ms
100ms
Ciss
Limited by RDS(on)
VDS = 500V
ID = 6A
IG = 10mA
Single Pulse
f = 1MHz
VDS = 25V TJ = 125°C
TJ = 25°C
D=0.2
D=0.1
D=0.05
D=0.01
D=0.02