Data Sheet, Doc. No. 5SYA 1419-03 06-2012 5SLD 1000N330300 HiPak DIODE Module VRRM = 3300 V IF = 2 x 1000 A Ultra low-loss, rugged SPT+ diode Smooth switching SPT+ diode for good EMC AlSiC base-plate for high power cycling capability AlN substrate for low thermal resistance 2 diodes in 1 package Maximum rated values 1) Parameter Repetitive peak reverse voltage DC forward current Symbol VRRM Conditions Tvj min 25 C IF max Unit 3300 V 1000 A Peak forward current IFRM tp = 1 ms, per Diode 2000 A Total power dissipation Ptot TC = 25 C, Tvj = 150 C, per Diode 4900 W Surge current IFSM VR = 0 V, Tvj = 150 C, tp = 10 ms, half-sinewave, per Diode 9000 A Isolation voltage Visol 1 min, f = 50 Hz 6000 V Junction temperature 150 C Tvj(op) -50 150 C Case temperature TC -50 125 C Storage temperature Tstg -50 125 C Junction operating temperature Mounting torques 2) 1) 2) Tvj Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 for detailed mounting instructions refer to ABB Document No. 5SYA2039 Nm Diode characteristic values 2) Parameter Symbol Conditions min typ max Unit 2.05 2.5 V Tvj =125 C 2.25 2.6 Tvj =150 C 2.20 Tvj =25 C Forward voltage 3) VF IF = 1000 A Tvj =25 C Continuous reverse current IR Reverse recovery current Qrr Reverse recovery time trr Reverse recovery energy 3) Tvj =125 C Irr Recovered charge 2) VR = 3300 A VCC = 1800 V, IF = 1000 A, di/dt = 4 kA/s L = 100 nH, inductive load switch: 5SNA 1000N330300 Per Diode Erec 6 V V 0.5 mA 12 mA Tvj =150 C 30 mA Tvj =25 C 1010 A Tvj =125 C 1180 A Tvj =150 C 1230 A Tvj =25 C 630 C Tvj =125 C 1020 C Tvj =150 C 1180 C Tvj =25 C 1125 ns Tvj =125 C 1440 ns Tvj =150 C 1630 ns Tvj =25 C 700 mJ Tvj =125 C 1210 mJ Tvj =150 C 1420 mJ Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level Package properties 4) Parameter Symbol Diode thermal resistance junction to case Diode thermal resistance case to heatsink Rth(j-c)DIODE Per Diode Rth(c-s)DIODE Per Diode, min typ max Unit 0.025 K/W 2) Comparative tracking index CTI Module stray inductance L Resistance, terminal-chip 2) Conditions AC RAA'+CC' grease = 1W/m x K 0.024 K/W 24 nH 400 Per Diode Per Diode TC =25 C 0.166 TC =125 C 0.226 TC =150 C 0.240 m for detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 4) Parameter Symbol Conditions Dimensions LxWxH Typical Clearance distance in air da according to IEC 60664-1 and EN 50124-1 Surface creepage distance ds according to IEC 60664-1 and EN 50124-1 Mass m 4) Package and mechanical properties according to IEC 60747 - 15 2 5SLD 1000N330300 | Doc. No. 5SYA 1419-03 06-2012 min typ 130 x 140 x 38 Term. to base: 19 Term. to term: 19 Term. to base: 32 Term. to term: 32 max Unit mm mm mm 880 g Electrical configuration Outline drawing 2) Note: all dimensions are shown in millimeters 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. 3 5SLD 1000N330300 | Doc. No. 5SYA 1419-03 06-2012 2000 1750 3000 Tvj = 125 C Tvj = 150 C Tvj = 125 C Tvj = 150 C VCC = 1800 V VGE = 15 V RGon = 1.5 ohm CGE = 220 nF L = 100 nH 1000 1500 Erec 250 Irr RG = 1.2 Ohm RG = 1.5 Ohm RG = 1.8 Ohm RG = 10 Ohm 0 2000 1 2 3 4 5 di/dt [kA/s] IF [A] Fig. 1 VCC = 1800 V IF = 1000 A CGE = 220 nF L = 100 nH 0 0 500 500 750 0 0 750 RG = 4.7 Ohm 500 Qrr RG = 2.2 Ohm Qrr 1000 RG = 2.7 Ohm 1500 1250 RG = 3.3 Ohm 1000 RG = 15 Ohm Irr Erec [mJ], Irr [A], Qrr [C] 2250 Qrr [C] Erec [mJ], Irr [A] 1500 RG = 6.8 Ohm 1500 Erec Typical reverse recovery characteristics vs forward current Fig. 2 Typical reverse recovery characteristics vs di/dt 2000 VCC 2500 V di/dt 5.3 kA/s Tvj = 150 C L = 100 nH 2000 1500 25 C IR [A] IF [A] 1500 1000 125 C 1000 150 C 500 500 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 VF [V] Fig. 3 Typicial diode forward characteristics chip level 4 5SLD 1000N330300 | Doc. No. 5SYA 1419-03 06-2012 500 1000 1500 2000 2500 VR [V] Fig. 4 Safe operating area diode (SOA) 3000 3500 0.1 Analytical function for transient thermal impedance: n Zth(j-c) Diode R i (1 - e -t/ i ) Z th (j-c) (t) = 0.01 DIODE Zth(j-c) Diode [K/W] i 1 Ri(K/kW) 17.1 4.28 1.92 1.92 i(ms) 203.6 30.1 7.53 1.57 5SLD 1000N330300 | Doc. No. 5SYA 1419-03 06-2012 0.001 0.0001 0.001 Fig. 5 0.01 0.1 t [s] 1 10 Thermal impedance vs time Related documents: 5SYA 2042 Failure rates of HiPak modules due to cosmic rays 5SYA 2043 Load - cycle capability of HiPaks 5SYA 2045 Thermal runaway during blocking 5SYA 2058 Surge currents for IGBT diodes 5SZK 9111 Specification of environmental class for HiPak Storage 5SZK 9112 Specification of environmental class for HiPak Transportation 5SZK 9113 Specification of environmental class for HiPak Operation (Industry) 5SZK 9120 Specification of environmental class for HiPak ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg Switzerland Phone: +41 58 586 1419 Fax: +41 58 586 1306 E-Mail: abbsem@ch.abb.com Internet: www.abb.com/semiconductors We reserve the right to make technical changes or to modify the contents of this document without prior notice. We reserve all rights in this document and the information contained therein. Any reproduction or utilization of this document or parts thereof for commercial purposes without our prior written consent is forbidden. Any liability for use of our products contrary to the instructions in this document is excluded.