©2001 Fairchild Semiconductor Corporation Rev. A, August 2001
MMBT3646
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 15 V
VCES Collector-Emitter Voltage 40 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5
ICCollector Current (DC) - Continuous 300 mA
PDTotal Device Dissipation
- Derate above 25°C@ TA=25°C 625
5mW
mW/°C
TJ, TSTG Operating and Storage Junction Temperature Range 150 °C
Symbol Parameter Min. Typ. Max. Units
Off Characteristics
V(BR)CES Collector-Emit ter Breakdown Voltage (IC = 100µAdc, VBE = 0) 40 V
VCEO(SUS)Collector-Emitter Sustaining Vo ltage (1) (IC = 10mAdc, IB = 0) 15 V
V(BR)CBO Collector- Base Br eakdown Voltage (IC = 100µAdc, IE = 0) 40 V
V(BR)EBO Emitter-Base Breakdown Voltage (IE = 100µAdc, IC = 0) 5 V
ICES Collector Cut-off Current (VCE = 20Vdc, VBE = 0)
(VCE = 20Vdc, VBE = 0, TA = 65°C) 0.5
3µA
On Characteristics (1)
hFE DC Current Gain (IC = 30mAdc, VCE = 0.4Vdc)
(IC = 100mAdc, VCE = 0.5Vdc)
(IC = 300mAdc, VCE = 1Vdc)
30
25
15
120
VCE(sat) Collector-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(IC = 100mAdc, IB = 10mAdc)
(IC = 300mAdc, IB = 30mAdc)
(IC = 30mA, IB = 3mA, TA =65°C)
0.2
0.28
0.5
0.3
V
VBE(sat) Base-Emitter Saturation Voltage (IC = 30mAdc, IB = 3mAdc)
(IC = 100mAdc, IB = 10mAdc)
(IC = 300mAdc, IB = 30mAdc)
0.73 0.95
1.2
1.7
V
MMBT3646
Switching Transistor
SOT-23
1. Base 2. Emitter 3. Collector
1
2
3
Mark: 23
©2001 Fairchild Semiconductor Corporation Rev. A, August 2001
MMBT3646
Electrical Characteristics TC=25°C unless otherwise noted) (Continued)
Thermal Characteris ti cs
Symbol Parameter Min. Typ. Max. Units
Small-Signal Characteristics
Cobo Output Capacitance
(VCE = 5Vdc, IE = 0, f = 1MHz) 5pF
Cibo Input Capacitance
(VEB = 0.5Vdc, IC = 0, f = 1MHz) 8pF
Switching Characteristics
ton Tu rn-On Time V CC = 10Vdc, IC = 300mAdc,
IB1 = 30mAdc, VCE(off) = 3V 18 ns
tdDelay Time 10 ns
trRise Time 15 ns
toff Tur n -Off Time VCC = 10Vdc, IC = 300mAdc,
IB1 = IB2 = 30mAdc 28 ns
tfFall Time 15 ns
tsStorge Time 20 ns
Symbol Parameter Min. Typ. Max. Units
RθJA Thermal Resistance, Junction to Ambient 200 °C
RθJC Thermal Resistance, Junction to Case 83.3 °C
Package Demensions
©2001 Fairchild Semiconductor Corporation Rev. A, August 2001
MMBT3646
Dimensions in Millimeters
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
©2001 Fairchild Semiconductor Corporation Rev. H4
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
STAR*POWE R is used under license
ACEx™
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DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FAST®
FASTr™
FRFET™
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MicroFET™
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SyncFET™
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