TC4421AVMF13 - Microchip Technology, Inc.

TC4421A/TC4422A

Features

• High Peak Output Current: 10A (typ.)

• Low Shoot-Through/Cross-Conduction Current in

Output St age

• Wide Input Supply Voltage Operating Range:

- 4.5V to 18V

• High Continuous Output Current: 2A (max.)

• Matched Fast Rise and Fall Times:

- 15 ns with 4,700 pF Load

- 135 ns with 47,000 pF Load

• Matched Short Propagation D elays: 42 ns (typ. )

• Low Supply Current:

- With Logic ‘1’ Input – 130 µA (typ.)

- With Logic ‘0’ Input – 33 µA (typ.)

• Low Output Impedance: 1.2Ω (typ.)

• Latch-Up Protected: Will Withstand 1.5A Output

Reverse Current

• Input Will Withstand Negative Inputs Up To 5V

• Pin-Com p a tib le wi th the TC4420/T C 442 9

and TC4421/TC4422 MOSFET Drivers

• Space-Saving, Thermally-Enhanced, 8-Pin DFN

Package

Applications

• Line Drivers for Extra Heavily-Loaded Lines

• Pul se Generators

• Driving the Largest MOSFETs and IGBTs

• Local Power ON/OFF Switch

• Motor and Solenoid Driver

• LF Initiator

General Description

The TC4421A/TC4422A are improved versions of the

earlier TC4421/TC4422 family of single-output

MOSFET drivers. These devices are high-current

buffer/drivers capable of driving large MOSFETs and

Insulated Gate Bipolar Transistors (IGBTs). The

TC4421A/TC4422A have matched output rise and fall

times, as well as matched leading and falling-edge

propagation delay times. The TC4421A/TC4422A

devices also have very low cross-conduction current,

reducing the overal l power dissipation of the device.

These devices are essentially immune to any form of

upset, except direct overvoltage or over-dissipation.

They cannot be latched under any conditions within

their power and voltage ratings. These parts are not

subject to damage or improper operation when up to

5V of ground bounce is present on their ground

terminals. They can accept, without damage or logic

upset, more than 1A inductive current of either polarity

being forced back into their outputs. In addition, all

terminals are fully protected against up to 4 kV of

electrostatic discharge.

The TC4421A/TC4422A inpu ts may be driven directly

from either TTL or CMOS (3V to 18V). In addition,

300 mV of hysteresis is built into the input, providing

noise immunity and allowing the device to be driven

from slowly r ising or fall ing wave forms.

With both surface-mount and pin-through-hole

packages, in addition to a wide operating temperature

range, the TC4421A/TC4422A family of 9A MOSFET

drivers fit into most any application where high gate/line

capac itance drive is required.

Package Types(1)

8-Pin

VDD

8OUTPUT

GND

VDD

INPUT

GND OUTPUT

TC4421A

TC4422A

5-Pin TO-220

VDD

GND

INPUT

GND

OUTPUT

TC4421A

TC4422A

Tab is

Common

to VDD

Note 1: Duplicate pins must both be connected for proper operation.

2: Exposed pad of the DFN package is electrically isolated.

TC4421A TC4422A

VDD

OUTPUT

GND

OUTPUT

PDIP/SOIC 8-Pin DFN(2)

VDD

INPUT

GND

TC4421A

TC4422A

VDD

OUTPUT

GND

OUTPUT

TC4421A TC4422A

VDD

OUTPUT

GND

OUTPUT

9A High-Speed MOSFET Drivers

TC4421A/TC4422A

Functional Block Diagram

Effective

Input

Output

Input

GND

VDD

300 mV

4.7V

TC4421A

C = 25 pF

TC4422A

Inverting

Non-Inverting

130 µA

Cross-Conduction

Reduction and Pre-Drive

Circuitry

Output

TC4421A/TC4422A

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Supply Voltage.....................................................+20V

Input Voltage....................(VDD + 0.3V) to (GND – 5V)

Input Current (VIN > VDD)...................................50 mA

† Stresses above those listed under “Absolute Maximum

Ratings” may cause permanent damage to the device. These

are stress ratings only and funct ional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless other wise noted, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Input

Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V

Logic ‘0’, Low Input Voltage VIL —1.30.8V

Input Current IIN –10 — +10 µA 0V ≤ VIN ≤ VDD

Input Voltage VIN –5 — VDD – 0.3 V

Output

High Output Voltage VOH VDD – 0.025 — — V DC Test

Low Ou tput Voltage VOL — — 0.025 V DC Test

Output Re si stance, High ROH —1.251.5ΩIOUT = 10 mA, VDD = 18V

Output Re si stance, Low ROL —0.81.1ΩIOUT = 10 mA, VDD = 18V

Peak Output Current IPK —10.0—AV

DD = 18V

Contin uou s Ou tpu t Current IDC 2 — — A 10V ≤ VDD ≤ 18V, T A = +25°C

(TC4421A/TC4422A CAT only)

(Note 2)

Latch-Up Prote ction

Withstand Reverse Current IREV — >1.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec

Switching T ime (Note 1)

Rise Time tR—2834nsFigure 4-1, CL = 10,000 pF

Fall Time tF—2632nsFigure 4-1, CL = 10 ,000 pF

Propagation Delay Time tD1 —3845nsFigure 4-1, CL = 10,000 pF

Propagation Delay Time tD2 —4249nsFigure 4-1, CL = 10,000 pF

Power Supply

Power Supply Current IS— 130 250 µA VIN = 3V

—35100µAV

IN = 0V

Operati ng Inpu t Voltage VDD 4.5 — 18 V

Note 1: Switching times ensured by design.

2: Tested during characterization, not production tested.

TC4421A/TC4422A

DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)

TEMPERATURE CHARACTERISTICS

Electrical Specifications: Unle ss otherwise noted, over operating temperature range with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Input

Logic ‘1’, High Input Voltage VIH 2.4 — — V

Logic ‘0’, Low Input Voltage VIL ——0.8V

Input Current IIN –10 — +10 µA 0V ≤ VIN ≤ VDD

Output

High Output Voltage VOH VDD – 0.0 25 — — V DC Test

Low Ou tput Voltage VOL ——0.025VDC Test

Output Re si stance, High ROH ——2.0ΩIOUT = 10 mA, V DD = 18V

Output Re si stance, Low ROL ——1.6ΩIOUT = 10 mA, VDD = 18V

Switching T ime (Note 1)

Rise Time tR—3845nsFigure 4-1, CL = 10,000 pF

Fall Time tF—3340nsFigure 4-1, CL = 10,000 pF

Propagation Delay Time tD1 —50.460nsFigure 4-1, CL = 10,000 pF

Propagation Delay Time tD2 —5360nsFigure 4-1, CL = 10,000 pF

Power Supply

Power Supply Current IS— 200 500 µA VIN = 3V

— 50 150 µA VIN = 0V

Operati ng Inpu t Voltage VDD 4.5 — 18 V

Note 1: Switching times ensured by design.

Electrical Specifications: Unle ss otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Specified Temperature Range (V) TA–40 — +125 °C

Maximum Jun c tion Temperature TJ— — +150 °C

Storage Temperature Range TA–65 — +150 °C

Package Thermal Resistances

Thermal Resistance, 5L-TO-220 θJA — 71 — °C/W Without heat sink

Thermal Resistance, 8L-6x5 DFN θJA — 33.2 — °C/W Typical 4-layer board with

vias to ground plane

Thermal Resistance, 8L-PDIP θJA —125—°C/W

Thermal Resistance, 8L-SOIC θJA —155—°C/W

TC4421A/TC4422A

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-1: Rise Time vs. Supply

Voltage.

FIGURE 2-2: Rise Time vs. Capacitive

Load.

FIGURE 2-3: Fall Time vs. Supply

Voltage.

FIGURE 2-4: Fall Time vs. Capacitive

Load.

FIGURE 2-5: Rise and Fall Times vs.

Temperature.

FIGURE 2-6: Crossover Energy vs Supply

Voltage.

Note: The g r ap hs and t ables provided fol low i ng thi s n ote are a statistical summary bas ed on a limited num ber of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In so me graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

100

120

140

160

180

4 6 8 1012141618

Supply Voltage (V)

Rise Time (ns)

22,000 pF

10,000 p F

1,000 pF 100 pF

100

150

200

250

300

100 1000 10000 100000

Capacitive Load (pF)

Rise Time (ns)

10V

15V

100

120

140

160

180

4 6 8 10 12 14 16 18

Supply Voltage (V)

Fall Time (ns)

22,000 pF

10,000 pF

1,000 pF 100 pF

100

150

200

250

300

100 1000 10000 100000

Capacitive Load (pF)

Fall Time (ns)

15V

10V

-40 -25 -10 5 20 35 50 65 80 95 110 125

Temperature (°C)

Time (ns)

tRISE

tFALL

VDD = 15V

1E-9

1E-8

1E-7

4 6 8 10 12 14 16 18

Supply Voltage (V)

Crossover Energy (A·sec)

10-7

10-8

10-9

TC4421A/TC4422A

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-7: Propagation Delay vs.

Supply Voltage.

FIGURE 2-8: Propagation Delay vs. Input

Amplitude.

FIGURE 2-9: Propagation Delay vs.

Temperature.

FIGURE 2-10: Quiescent Supply Current

vs. Supply Voltage.

FIGURE 2-11: Quiescent Supply Current

vs. Temperature.

FIGURE 2-12: Input Threshold vs.

Temperature.

4 6 8 10 12 14 16 18

Supply Voltage (V)

Propagation Delay (nS)

tD2

tD1

CLOAD

= 10,000 pF

2345678910

Input Amplitude (V)

Propagation Delay (ns)

tD1

tD2

VDD = 12V

-40 -25 -10 5 20 35 50 65 80 95 110 125

Temperature (°C)

Propagation Delay (ns)

tD2

tD1

VDD = 12V

VIN = 5V

CLOAD = 10,000 pF

100

120

140

4 6 8 10 12 14 16 18

Supply Voltage (V)

IQUIESCENT (µA)

INPU T = High

INPUT = Lo w

100

120

140

160

180

200

220

-40 -25 -10 5 20 35 50 65 80 95 110 125

Temperatu re (°C)

IQUIESCENT (µA)

INPU T = Low

INPUT = High

VDD = 18V

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

-40 -25 -10 5 20 35 50 65 80 95 110 125

Tempera tur e (°C)

Input Threshold (V)

VIH

VIL

VDD = 12V

TC4421A/TC4422A

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-13: Input Thresh old vs. Supply

Voltage.

FIGURE 2-14: High-State Output

Resistance vs. Supply Voltage.

FIGURE 2-15: Low-State Output

Resistance vs. Supply Voltage.

FIGURE 2-16: Supply Current vs.

Capactive Load (VDD = 18V).

FIGURE 2-17: Supply Current vs.

Capactive Load (VDD = 12V).

FIGURE 2-18: Supply Current vs.

Capactive Load (VDD = 6V).

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

4 6 8 1012141618

Supp ly Vo l tage (V)

Input Threshold (V)

VIH

VIL

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

4 6 8 1012141618

Supply Voltage (V)

ROUT-HI (

)

TJ = 25°C

TJ = 150°C

VIN = 5V (TC4422A)

VIN = 0V (TC4421A)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4 6 8 1012141618

Supply Voltage (V)

ROUT-LO (

)

TJ = 25°C

TJ = 150°C

VIN = 0V (TC4422A)

VIN = 5V (TC4421A)

100

120

140

160

180

100 1,000 10,000 100,000

Capacitive Load (pF)

Supply Current (mA)

2 MHz 1 MHz

200 kHz

100 kHz

50 kHz

10 kHz

VDD = 18V

100

120

140

160

180

200

100 1,000 10,000 100,000

Capacitive Load (pF)

Supply Current (mA)

2 MHz 1 MHz

200 kHz

100 kHz

50 kHz

10 kHz

VDD = 12V

100

120

140

160

180

200

220

100 1,000 10,000 100,000

Capacitive Load (pF)

Supply Current (mA)

2 MHz

1 MHz

200 kHz

100 kHz

50 kHz

10 kHz

VDD = 6V

TC4421A/TC4422A

Note: Unless otherwise indicated, TA = +25°C with 4.5V ≤ VDD ≤ 18V.

FIGURE 2-19: Supply Curre nt vs .

Frequency (VDD = 18V).

FIGURE 2-20: Supply Curre nt vs .

Frequency (VDD = 12V).

FIGURE 2-21: Supply Current vs.

Frequency (VDD = 6V).

100

120

140

160

180

10 100 1000 10000

Frequency (kHz)

Supply Current (mA)

VDD = 18V

470 pF

1000 pF

10,000 pF

22,000 pF

47,000 pF

0.1 µF

100

120

140

160

180

200

10 100 1000 10000

Frequency (kHz)

Supply Current (mA)

470 pF

1000 pF

10,000 pF

22,000 pF

47,000 pF

0.1 µ

VDD = 12V

100

120

140

160

180

200

220

10 100 1000 10000

Frequency (kHz)

Supply Current (mA)

470 pF

1000 pF

10,000 pF

22,000 pF

47,000 pF

0.1 µF

VDD = 6V

TC4421A/TC4422A

3.0 PIN DESCRIPTIONS

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

3.1 Supply Input (VDD)

The VDD in put is the bia s supply for the M OSFET driver

and is rated for 4.5V to 18V with respect to the ground

pin. The VDD input should be bypassed to ground with

a local ceramic capacitor. The value of the capacitor

shoul d be chos en base d on the capaciti ve load that is

being driv en . A min im um val ue of 1.0 µF is suggeste d.

3.2 Control Input

The MOSFET driver input is a high-impedance,

TTL/CMOS-compatible input. The input also has

300 mV of hysteresis between the high and low

thresholds that prevents output glitching even when the

rise and fall time of the input signal is very slow.

3.3 CMOS Push-Pull Output

The MOSFET driver output is a low-impedance,

CMOS, push-pull style output capable of driving a

capacitive load with 9.0A peak currents. The MOSFET

driver output is capable of withstanding 1.5A peak

reverse currents of either polarity.

3.4 Ground

The ground pin s are the return path for the bias current

and for the high peak currents that discharge the load

capa citor. The ground pi ns shoul d be tied i nto a groun d

plane or have very short traces to the bias supply

source retur n.

3.5 Exposed Metal Pad

The expo sed metal p a d of th e 6 x5 D F N package is not

internally connected to any potential. Therefore, this

pad can be connected to a ground plane or other

copper p lane on a Printe d Circui t Board (PCB ) to a id in

heat removal from the package.

3.6 Metal Tab

The metal tab of the TO-220 package is connected to

the VDD po tential of the d evic e. This conn ection to VDD

can be used as a current carrying path for the device.

Pin No.

8-Pin PDIP,

SOIC

Pin No .

8-Pin DFN Pin No.

5-Pin TO-220 Symbol Description

11—V

DD Supply input, 4.5V to 18V

2 2 1 INPUT Control input, TTL/CMOS-compatible input

3 3 — NC No connectio n

4 4 2 GND Ground

5 5 4 GND Ground

6 6 5 OUTPUT CMOS push-pull output

7 7 — OUTPUT CMOS push-pull output

883V

DD Supply input, 4.5V to 18V

—PAD— NCExposed metal pad

——TABV

DD Metal tab is at the VDD potential

TC4421A/TC4422A

4.0 APPLICATIONS INFORMATION

FIGURE 4-1: Switching Time Test Circuits.

Inverting Driver

Non-Inverting Driver

Input

tD1 tF

tD2

Input: 100 kHz,

square wave,

tRISE = tFALL ≤ 10 nsec

Output

Input

Output

tD1 tF

tD2

+5V

10%

90%

10%

90%

10%

90%

+18V

90%

10%

10% 10%

90%

+5V

+18V

90%

CL = 10,000 pF

0.1 µF 4.7 µF

Input

VDD = 18V

Output

0.1 µF

TC4421A

TC4422A

Note: Pinout shown is for the DFN, PDIP and SOIC packages.

VDD VDD

Input

GND GND

Output

TC4421A/TC4422A

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

XXXXXXXX

XXXXXNNN

YYWW

8-Lead PDIP (300 mil) Example:

TC4421A

PA ^ 256

0514

5-Lead TO-220

XXXXXXXXX

YYWWNNN

Example:

TC4421A

XXXXXXXXX

0514256

VAT^^

Legend: XX...X Customer-specific information

Y Year code (last digit of calendar year)

YY Year code (last 2 digits of calendar year)

WW Week code (week of January 1 is week ‘01’)

NNN Alphanu me ric trac ea bil ity code

Pb-free JEDEC designator for Matte Tin (Sn)

*This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the even t the full M icroc hip p art numb er cann ot be mark ed on one line, it wil l

be carried over to the next line, thus limiting the number of available

characters for customer-specific information.

8-Lead DFN Example:

TC4421A

VMF

0514

256

8-Lead SOI C (150 mil) Example:

XXXXXXXX

XXXXYYWW

NNN

TC4421A

SN 0514

256

XXXXXXX

XXYYWW

NNN

TC4421A/TC4422A

5-Lead Plastic Transistor Outline (AT) (TO-220)

L H1

a(5X)

ØP

EJECTOR PIN

Drawing No. C04-036

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or

protrusions shall not exceed .010" (0.254mm) per side.

JEDEC equivalent: TO-220

*Controlling Parameter

Mold Draft Angle

Lead Width

Lead Thickness

.014

Dimension Limits

Overall Height

Lead Length

Overall Width

Lead Pitch

.540

MIN

Units

.060

INCHES*

.022 0.36 0.56

MILLIMETERS

.190

.560 13.72

MINMAX

4.83

14.22

MAX

.160 4.06

3° 7° 3° 7°

Overall Length D

1.020.64.040.025

Overall Lead Centers e1 .263

.385

.560

.273 6.68 6.93

.072 1.52 1.83

.415 9.78 10.54

.590 14.22 14.99

Through Hole Diameter P .146 .156 3.71 3.96

J1Base to Bottom of Lead .090 2.29.115 2.92

Through Hole Center Q.103 2.87.113 2.62

Flag Thickness F .045 1.40.055 1.14

Flag Length H1 .234 6.55.258 5.94

Space Between Leads e3 .030 1.02.040 0.76

TC4421A/TC4422A

8-Lead Plastic Dual Flat No Lead Package (MF) 6x5 m m Body (DFN-S) – Saw Singulated

TC4421A/TC4422A

8-Lead Plastic Dual In-line (PA) – 300 mil (PDIP)

Units INCHES* MILLIMETERS

Dimen sion Li mits M IN NOM M AX MI N NOM MAX

Number of P ins n88

Pitch p.100 2.54

Top to Seating Plane A .140 .155 .170 3.56 3.94 4.32

Molded Package Thickness A2 .115 .130 .145 2.92 3.30 3.68

Base to Seating Plane A1 .015 0.38

Shoulder to Sh oulder Width E .300 .313 .325 7.62 7.94 8.26

Molded Package Width E1 .240 .250 .260 6.10 6.35 6.60

Overall Len gth D .360 .37 3 .38 5 9.1 4 9.46 9.78

Tip to Seating Plane L .125 .130 .135 3.18 3. 30 3.43

Lead Thickness c.008 .012 .015 0.20 0.29 0.38

Upper Lead Width B1 .045 .058 .070 1.14 1.46 1.78

Lower Lead Width B .014 .018 .022 0.36 0.46 0.56

Overall Row Spacing § eB .310 .370 .430 7.87 9.40 10.92

Mold Draft Angle Top α5 10 15 5 10 15

Mold Draft Angle Bottom β5 10 15 5 10 15

* Controlling Parameter

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

JEDEC Equivalent: MS-001

Drawing No. C04-018

.010” (0.254mm) per side.

§ Significant Characteristic

TC4421A/TC4422A

8-Lead Plastic Small Outline (OA) – Narrow, 150 mil (SOIC)

Foot A ngle φ048048

1512015120

Mold Draft Angle Bottom 1512015120

Mold Draft Angle Top 0.510.420.33.020.017.013BLead Width 0.250.230.20.010.009.008

Lead Thickness

0.760.620.48.030.025.019LFoot Length 0.510.380.25.020.015.010hChamfer Distance 5.004.904.80.197.193.189DOverall Length 3.993.913.71.157.154.146E1Molded Pa ckag e Width 6.206.025.79.244.237.228EOverall Width 0.250.180.10.010.007.004A1Standoff § 1.551.421.32.061.056.052A2Molded Packag e Thickness 1.751.551.35.069.061.053AOverall Height 1.27.050

Pitch 88

Numb er of Pin s MAXNOMMINMAXNOMMINDimension Limits MILLIMETERSINCHES*Units

45°

* Controlling Parameter

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: MS-012

Drawing No. C04-057

§ Significant Characteristic

TC4421A/TC4422A

NOTES:

TC4421A/TC4422A

APPENDIX A: REVISION HISTORY

Revision A (May 2005)

• Original Release of this Document.

TC4421A/TC4422A

NOTES:

TC4421A/TC4422A

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Device: TC4421A: 9A High-Speed MOSFET Driver, Inverting

TC4422A: 9A High-Speed MOSFET Driver, Non-Inverting

Temperature Range: V = -40°C to +125°C

Package: * AT = TO-220, 5-lead

MF = Dual, Flat, No-Lead (6x5 mm Body), 8-lead

MF713 = Dual, Flat, No-Lead (6x5 mm Body), 8-lead

(Tape and Reel)

PA = Plastic DIP (300 mil Body), 8-lead

OA = Plastic SOIC (150 mil Body), 8-lead

OA713 = Plastic SOIC (150 mil Body), 8-lead

(Tape and Reel)

*All package offerings are Pb Free (Lead Free).

PART NO. XXX

PackageTemperature

Range

Device

Examples:

a) TC4421AVAT: 9A High-Speed Inverting

MOSFET Dr i ver,

TO-220 package,

-40°C to +125°C.

b) TC4421AVOA: 9A High-Speed Inverting

MOSFET Dr i ver,

SOIC package,

-40°C to +125°C.

c) TC4421AVMF: 9A High-Speed Inverting

MOSFET Dr i ver,

DFN package,

-40°C to +125°C.

a) TC4422AVPA: 9A High- Speed

Non-In verting MOSFET

Driv e r, PDIP package,

-40°C to +125°C.

b) TC4422AVOA: 9A High-Speed

Non-Inverting

MOSFET Driver,

SOIC package,

-40°C to +125°C.

c) TC4422AVMF: 9A High-Speed

Non-In verting MOSFET

Driver, DFN package,

-40°C to +125°C.

XXX

Tape & Reel

TC4421A/TC4422A

NOTES:

Information contained in this publication regarding device

applications and the like is provided only for your convenience

and may be superseded by updates. It is your responsibility to

ensure that your application meets with your specifications.

MICROCHIP MAKES NO REPRESENTATIONS OR WAR-

RANTIES OF ANY KIN D WHETHER EXPRESS OR IMPLIED ,

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RELATED TO THE INFORMATION, INCLUDING BUT NOT

LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,

MERCHANTABILITY OR FITNESS FOR PURPOSE.

Microchip disclaims all liability arising from this information and

its use. U se of Microc hip’s products as critical com ponents in

life support systems is not authorized except with express

written approval by Microchip. No licenses are conveyed,

implicitly or otherwise, under any Microchip intellectual property

rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, micro ID, MPLAB, PIC, PICmicro,

PICSTART, PRO MATE, Po w erSmart , rfP IC, a nd

SmartShunt are registered trademarks of Microchip

Tec hnolog y Incorporated in the U.S.A. and other countries.

AmpLab, FilterLab, Migratable Memory , MX DE V, MXLAB,

PICMASTER, SEEVAL, SmartSensor and The Embedded

Control Solutions Company are registered trademarks of

Microchip Technology Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, dsPICDEM,

dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,

FanSense, FlexROM, fuzzyLAB, In-Circuit Serial

Programming, ICSP, ICEPIC, Linear Active Thermist or,

MPASM, MP LIB, MPLINK, MPSIM, PI Ckit, PICD EM,

PICDEM.net, PICLAB, PICtail, PowerCal, PowerInfo,

PowerMate, Powe rTool, rfLAB , rfPICDEM , Select Mode,

Smart Serial, SmartTel, Total Endurance and WiperLock are

trademarks of Microchip Technology Incorporated in the

U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that it s f amily of products is one of t he most secure famili es of its kind on t he market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is c onstantly evolving. We a t Microchip are com mitted to continuously improving the code protect ion f eatures of our

products. Attempts to break Microchip’ s code protection f eature may be a violati on of t he Digit al Millennium Copyright Act. If such act s

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2002 quality system certification for

its worldwide headquarters, design and wafer fabrication facilities in

Chandler and Tempe, Arizona and Mountain View, California in

October 2003. The Company’s quality system processes and

procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping

devices, Serial EEPROMs, micro peripherals, nonvolat ile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

AMERICAS

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-792-7200

Fax: 480-792-7277

Technical Support:

http://support.microchip.com

Web Address:

www.microchip.com

Atlanta

Alpharetta, GA

Tel: 770-640-0034

Fax: 770-640-0307

Boston

Westborough, MA

Tel: 774-760-0087

Fax: 774-760-0088

Chicago

Itasc a , IL

Tel: 630-285-0071

Fax: 630-285-0075

Dallas

Addison, TX

Tel: 972-818-7423

Fax: 972-818-2924

Detroit

Farmington Hills, MI

Tel: 248-538-2250

Fax: 248-538-2260

Kokomo

Kokomo, IN

Tel: 765-864-8360

Fax: 765-864-8387

Los A n ge les

Mission Viejo, CA

Tel: 949-462-9523

Fax: 949-462-9608

San Jose

Mountain View, CA

Tel: 650-215-1444

Fax: 650-961-0286

Toronto

Mississauga, Ontario,

Canada

Tel: 905-673-0699

Fax: 905-673-6509

ASIA/PACIFIC

Australia - Sydney

Tel: 61-2-9868-6733

Fax: 61-2-9868-6755

China - Beijing

Tel: 86-10-8528-2100

Fax: 86-10-8528-2104

China - Chengdu

Tel: 86-28-8676-6200

Fax: 86-28-8676-6599

China - Fu zhou

Tel: 86-591-8750-3506

Fax: 86-591-8750-3521

China - Hong Kong SAR

Tel: 852-2401-1200

Fax: 852-2401-3431

China - Shanghai

Tel: 86-21-5407-5533

Fax: 86-21-5407-5066

China - Shenyang

Tel: 86-24-2334-2829

Fax: 86-24-2334-2393

China - Shenzhen

Tel: 86-755-8203-2660

Fax: 86-755-8203-1760

China - Shunde

Tel: 86-757-2839-5507

Fax: 86-757-2839-5571

China - Qingdao

Tel: 86-532-502-7355

Fax: 86-532-502-7205

ASIA/PACIFIC

India - Bangalore

Tel: 91-80-2229-0061

Fax: 91-80-2229-0062

India - New Delhi

Tel: 91-11-5160-8631

Fax: 91-11-5160-8632

Japan - Kanagawa

Tel: 81-45-471- 6166

Fax: 81-45-471-6122

Korea - Seoul

Tel: 82-2-554-7200

Fax: 82-2-558-5932 or

82-2-558-5934

Malaysia - Penang

Tel:011-604-646-8870

Fax:011-604-646-5086

Philippines - Manila

Tel: 011-632-634-9065

Fax: 011-632-634-9069

Singapore

Tel: 65-6334-8870

Fax: 65-6334-8850

Taiwan - Kaohsiung

Tel: 886-7-536-4818

Fax: 886-7-536-4803

Taiwan - Taipei

Tel: 886-2-2500-6610

Fax: 886-2-2508-0102

Taiwan - Hsinchu

Tel: 886-3-572-9526

Fax: 886-3-572-6459

EUROPE

Austria - Weis

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark - Ballerup

Tel: 45-4450-2828

Fax: 45-4485-2829

France - Massy

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

Germany - Ismaning

Tel: 49-89-627-144-0

Fax: 49-89-627-14 4-44

Italy - Milan

Tel: 39-0331-742611

Fax: 39-0331-466781

Netherlands - Drunen

Tel: 31-416-690399

Fax: 31-416-690340

England - Berkshire

Tel: 44-118-921-5869

Fax: 44-118-921-5820

WORLDWIDE SALES AND SERVICE

04/20/05