The Smart Timing Choice
™
The Smart Timing Choice
™
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.01 Revised Feb 20, 2013
SiT9121
1-220 MHz High Performance Differential Oscillator
Features Applications
Any frequency between 1 MHz and 220 MHz accurate to 6 decimal
places
10GB Ethernet, SONET, Synchronous Ethernet, SATA, SAS,
Fibre Channel, PCI-Express
LVPECL and LVDS output signaling types Telecom, networking, broadband, instrumentation
0.6ps RMS phase jitter (random) over 12 kHz to 20 MHz bandwidth
Frequency stability as low as ±10 PPM
Industrial and extended commercial temperature ranges
Industry-standard packages: 3.2x2.5, 5.0x3.2 and 7.0x5.0 mmxmm
For frequencies higher than 220 MHz, refer to SiT9122 datasheet
Electrical Characteristics
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
LVPECL and LVDS, Common AC Characteristics
Output Frequency Range f 1 – 220 MHz For frequency coverage see last page
Frequency Stability
F_stab -10 – +10 PPM
Inclusive of initial tolerance, operating temperature, rated power
supply voltage, and load variations
-20 – +20 PPM
-25 – +25 PPM
-50 – +50 PPM
First Year Aging F_aging1 -2 – +2 PPM 25°C
10-year Aging F_aging10 -5 – +5 PPM 25°C
Operating Temperature Range T_use -40 – +85 °C Industrial
-20 – +70 °C Extended Commercial
Start-up Time T_start – 6 10 ms Measured from the time Vdd reaches its rated minimum value.
Resume Time T_resume – 6 10 ms In Standby mode, measured from the time ST pin crosses
50% threshold.
Duty Cycle DC 45 – 55 % Contact SiTime for tighter duty cycle
LVPECL, DC and AC Characteristics
Supply Voltage
Vdd 2.97 3.3 3.63 V
2.25 2.5 2.75 V
2.25 – 3.63 V Termination schemes in Figures 1 and 2 - XX ordering code
Current Consumption Idd – 61 69 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current I_OE – – 35 mA OE = Low
Output Disable Leakage Current I_leak – – 1 μA OE = Low
Standby Current I_std – – 100 μAST
= Low, for all Vdds
Maximum Output Current I_driver – – 30 mA Maximum average current drawn from OUT+ or OUT-
Output High Voltage VOH Vdd-1.1 – Vdd-0.7 V See Figure 1
Output Low Voltage VOL Vdd-1.9 – Vdd-1.5 V See Figure 1
Output Differential Voltage Swing V_Swing 1.2 1.6 2.0 V See Figure 1
Rise/Fall Time Tr, Tf – 300 500 ps 20% to 80%
OE Enable/Disable Time T_oe – – 115 ns f = 220 MHz - For other frequencies, T_oe = 100ns + 3 period
RMS Period Jitter
T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V, 2.5V or 2.5V to 3.3V
– 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V, 2.5V or 2.5V to 3.3V
– 1.2 1.7 ps f = 212.5 MHz, VDD =3.3V, 2.5V or 2.5V to 3.3V
RMS Phase Jitter (random) T_phj – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
LVDS, DC and AC Characteristics
Supply Voltage
Vdd 2.97 3.3 3.63 V Contact SiTime for 1.8V option
2.25 2.5 2.75 V
2.25 – 3.63 V XX ordering code
Current Consumption Idd – 47 55 mA Excluding Load Termination Current, Vdd = 3.3V or 2.5V
OE Disable Supply Current I_OE – – 35 mA OE = Low
Output Disable Leakage Current I_leak – – 1 μA OE = Low
Standby Current I_std – – 100 μAST
= Low, for all Vdds
Differential Output Voltage VOD 200 350 500 mV See Figure 4
The Smart Timing Choice
™
The Smart Timing Choice
™
SiT9121
1-220 MHz High Performance Differential Oscillator
Rev. 1.01 Page 2 of 6 www.sitime.com
Electrical Characteristics (continued)
Parameter and Conditions Symbol Min. Typ. Max. Unit Condition
VOD Magnitude Change ΔVOD – – 50 mV See Figure 4
Offset Voltage VOS 1.125 1.2 1.375 V See Figure 4
VOS Magnitude Change ΔVOS – – 50 mV See Figure 4
Rise/Fall Time Tr, Tf – 495 600 ps 20% to 80%
OE Enable/Disable Time T_oe – – 115 ns f = 220 MHz - For other frequencies, T_oe = 100ns + 3 period
RMS Period Jitter
T_jitt – 1.2 1.7 ps f = 100 MHz, VDD = 3.3V, 2.5V or 2.5V to 3.3V
– 1.2 1.7 ps f = 156.25 MHz, VDD = 3.3V, 2.5V or 2.5V to 3.3V
– 1.2 1.7 ps f = 212.5 MHz, VDD = 3.3V, 2.5V or 2.5V to 3.3V
RMS Phase Jitter (random) T_phj – 0.6 0.85 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz, all
Vdds
Pin Description
Pin Map Functionality
1
OE Input H or Open: specified frequency output
L: output is high impedance
ST Input
H or Open: specified frequency output
L: Device goes to sleep mode. Supply current reduces to
I_std.
2NC NA
Not Connect; Leave it floating or connect to GND for
better heat dissipation
3 GND Power VDD Power Supply Ground
4 OUT+ Output Oscillator output
5 OUT- Output Complementary oscillator output
6 VDD Power Power supply voltage
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 °C
VDD -0.5 4 V
Electrostatic Discharge (HBM) –2000V
Soldering Temperature (follow standard Pb free soldering guidelines) – 260 °C
Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260°C
43
1 6
GND
VDD
OUT+
52
NC OUT-
OE/ST
Top View
The Smart Timing Choice
™
The Smart Timing Choice
™
SiT9121
1-220 MHz High Performance Differential Oscillator
Rev. 1.01 Page 3 of 6 www.sitime.com
Termination Diagrams
LVPECL:
Z0 = 50 Ω
Z0 = 50 Ω
D+
D-
OUT+
OUT-
50 Ω
VTT = VDD – 2.0 V
Drive Device Receiver Device
50 Ω
VDD
Figure 1. LVPECL Typical Termination
D+
D-
OUT+
OUT-
Drive Device Receiver Device
Z0 = 50 Ω
Z0 = 50 Ω
R1
50 Ω50 Ω
R1
VTT
100 nF
100 nF
VDD VDD= 3.3V => R1 = 100 to 150 Ω
VDD= 2.5V => R1 = 75 Ω
Figure 2. LVPECL AC Coupled Termination
Z0 = 50 Ω
Z0 = 50 Ω
D+
D-
OUT+
OUT-
Drive Device Receiver
Device
R1
R2
R3
R4
VDD
VDD = 3.3V => R1 = R3 = 133 Ω and
R2 = R4 = 82 Ω
VDD = 2.5V => R1 = R3 = 250 Ω and
R2 = R4 = 62.5 Ω
VDD
Figure 3. LVPECL with Thevenin Typical Termination
The Smart Timing Choice
™
The Smart Timing Choice
™
SiT9121
1-220 MHz High Performance Differential Oscillator
Rev. 1.01 Page 4 of 6 www.sitime.com
LVDS:
Figure 4. LVDS Single Termination (Load Terminated)
The Smart Timing Choice
™
The Smart Timing Choice
™
SiT9121
1-220 MHz High Performance Differential Oscillator
Rev. 1.01 Page 5 of 6 www.sitime.com
1. Top Marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the assembly location of the device.
2. A capacitor of value 0.1 μF between Vdd and GND is recommended.
Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[1] Recommended Land Pattern (Unit: mm)[2]
3.2 x 2.5x 0.75 mm
5.0 x 3.2 x 0.75 mm
7.0 x 5.0x 0.90 mm
0.75±0.05
YXXXX
0.9
#2
#5
#2
#5
#1#3
#4 #6
#1 #3
#4#6
3.2±0.05
2.5±0.05
0.7
0.6
2.20
1.050.65
1.00
2.25
1.6
0.75±0.05
YXXXX
1.20
#2
#5
#2
#5
#1#3
#4 #6
#1 #3
#4#6
5.0±0.10
1.40
1.10
5.08
7.0±0.10
2.60
#1 #3
#6 #4
#1#3
#6
#4
0.90 ±0.10
#2
#5
#2
#5
YXXXX
5.08
1.60
1.60
3.80
Rev. 1.01 Page 6 of 6 www.sitime.com
© SiTime Corporation 2013. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a
Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii)
unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper
installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES
OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products
does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the
sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
The Smart Timing Choice
™
The Smart Timing Choice
™
1-220 MHz High Performance Differential Oscillator
SiT9121
Ordering Information
Frequencies Not Supported
Range 1: From 209.000001 MHz to 210.999999 MHz
SiT9121AC -1C 2-33E123.123456T
Frequency
1.000000 MHz to
220.000000 MHz
Part Fam ily
“SiT9121”
Revision Letter
“A” is the revision of Silicon
Temperature Range
“I” Industrial, -40 to 85°C
Packaging:
“T” for Tape & Reel (3 Ku Reel)
Package Size
Frequency Stability
“C” Extended Commercial, -20 to 70°C
Signalling Type
Voltage Supply
Feature Pin
“E” for Output Enable
“S” for Standby
“Y” for Tape & Reel (1 Ku Reel)
Blank for Bulk
“25” for 2.5V ±10%
“33” for 3.3V ±10%
“XX” for 2.25V to 3.63V
“B” 3.2 x 2.5 mm
“C” 5.0 x 3.2 mm
“D” 7.0 x 5.0 mm
“1” = LVPECL
“2” = LVDS
“F” for ±10 PPM
“1” for ±20 PPM
“2” for ±25 PPM
“3” for ±50 PPM
The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Supplemental Information
The Supplemental Information section is not part of the datasheet and is for informational purposes only.
The Smart Timing Choice
The Smart Timing Choice
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Silicon MEMS Outperforms Quartz Rev. 1.0 Revised January 16, 2013
Silicon MEMS Outperforms Quartz
The Smart Timing Choice
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Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.0 www.sitime.com
Best Reliability
Silicon is inherently more reliable than quartz. Unlike quartz
suppliers, SiTime has in-house MEMS and analog CMOS
expertise, which allows SiTime to develop the most reliable
products. Figure 1 shows a comparison with quartz
technology.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
• World-class MEMS and CMOS design expertise
Figure 1. Reliability Comparison[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long term
aging performance which is why every new SiTime product
specifies 10-year aging. A comparison is shown in Figure 2.
Why is SiTime Best in Class:
• SiTime’s MEMS resonators are vacuum sealed using an
advanced Epi-Seal™ process, which eliminates foreign
particles and improves long term aging and reliability
• Inherently better immunity of electrostatically driven
MEMS resonator
Figure 2. Aging Comparison[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than quartz
oscillators as shown in Figure 3.
Why is SiTime Best in Class:
• Internal differential architecture for best common mode
noise rejection
• Electrostatically driven MEMS resonator is more immune
to EMS
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise on
the power supply. A comparison is shown in Figure 4.
Why is SiTime Best in Class:
• On-chip regulators and internal differential architecture for
common mode noise rejection
• Best analog CMOS design expertise
Figure 4. Power Supply Noise Rejection[4]
Mean Time Between Failure (Million Hours)
14
16
28
38
500
0200 400 600
Pericom
TXC
Epson
IDT (Fox)
SiTime
SiTime
20X Better
1.5
3.5
3.0
8.0
0
2
4
6
8
10
1-Year 10-Year
SiTime MEMS vs. Quartz Aging
SiTime MEMS Oscillator Quartz Oscillator
Aging (±PPM)
SiTime
2X Better
- 39 - 40 - 42 - 43 - 45
- 73
- 90
- 80
- 70
- 60
- 50
- 40
- 30
Kyocera Epson TXC CW SiLabs SiTime
SiTime vs Quartz
Electro Magnetic Susceptibility (EMS)
Average Spurs (dB)
SiTime
54X Better
0.0
1.0
2.0
3.0
4.0
5.0
10 100 1,000 10,000
Additive Integrated Phase Jitter per mVp-p
Injected Noise (ps/mv)
Power Supply Noise Frequency (kHz)
Power Supply Noise Rejection
SiTIme NDK Epson Kyocera
SiTime
SiTime
3X Better
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Silicon MEMS Outperforms Quartz
Silicon MEMS Outperforms Quartz Rev. 1.0 www.sitime.com
Best Vibration Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a comparison
of vibration robustness.
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Figure 5. Vibration Robustness[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
• The moving mass of SiTime’s MEMS resonators is up to
3000 times smaller than quartz
• Center-anchored MEMS resonator is the most robust
design
Figure 6. Shock Robustness[6]
Vibration Sensitivity (ppb/g)
0.10
1.00
10.00
100.00
10 100 1000
Vibration Frequency (Hz)
Vibration Sensitivity vs. Frequency
SiTime TXC Epson Connor Winfield Kyocera SiLabs
SiTime
Up to 30x
Better
14.3
12.6
3.9
2.9 2.5
0.6
0
2
4
6
8
10
12
14
16
K
y
ocer
a
E
p
son TXC CW SiLab
s
SiTime
Differential XO Shock Robustness - 500 g
SiTime
Up to 25x
Better
Peak Frequency Deviation (PPM)
Notes:
1. Data Source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
• According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
• Field strength: 3V/m
• Radiated signal modulation: AM 1 kHz at 80% depth
• Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
• Antenna polarization: Vertical
• DUT position: Center aligned to antenna
Devices used in this test:
SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz
Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz
TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz
Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz
Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz
SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz
NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz
Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz
Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz
5. Devices used in this test: same as EMS test stated in Note 3.
6. Test conditions for shock test:
• MIL-STD-883F Method 2002
• Condition A: half sine wave shock pulse, 500-g, 1ms
• Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test: same as EMS test stated in Note 3
7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com.
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