MB39A110PFT-XXXE1 - Fujitsu Limited - Datasheet.Directory

DS04-27236-3Ea

FUJITSU MICROELECTRONICS

DATA SHEET

Copyright©2002-2008 FUJITSU MICROELECTRONICS LIMITED All rights reserved

2006.8

ASSP For Power Supply Applications

(DC/DC Converter for DSC/Camcorder)

4-ch DC/DC Converter IC

with Synchronous Rectification

MB39A110

■DESCRIPTION

The MB39A110 is a 4-channel DC/DC conv erter IC using pulse width modulation (PWM). This IC is ideal for up

conversion, down conversion, and up/down conversion.

This is built-in 4 c h in TSSOP -38P package and o perates at 2 MHz Ma x. Each chann el can be c ontrolled, an d

soft-start.

This is an ideal power supply for high-performance portable devices such as digital still cameras.

This product is covered by US Patent Number 6,147,477.

■FEATURES

• Supports fo r down-conversion and up/down Zeta conversion (CH1 to CH3)

• Supports for up-conversion and up/down Sepic conversion (CH4)

• For synchronous rectification (CH1, CH2)

• Power supply voltage range : 2.5 V to 11 V

• Referen ce voltage : 2.0 V ± 1 %

• Error amplifier threshold voltage : 1.23 V ± 1%

• High-frequency operation capability: 2 MHz (Max)

• Standby current : 0 µA (Typ)

• Built-in soft-start circuit independent of loads

• Built-in totem-pole type output for MOS FET

• Short-circuit detection capability by external signal (−INS terminal)

• One type of package (TSSOP-38 pin : 1 type)

■APPLICATIONS

• Digital still camera(DSC)

• Digi tal vi deo camera (DVC)

• Surveillance camera etc.

MB39A110

2

■PIN ASSIGNMENT

(TOP VIEW)

(FP T -3 8 P -M03)

CS2

−INE2

FB2

DTC2

VCC

CTL

CTL1

CTL2

CTL3

CTL4

VREF

RT

CT

GND

CSCP

DTC3

FB3

−INE3

CS3

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

20

CS1

−INE1

FB1

DTC1

VCCO-P

OUT1-1

OUT1-2

OUT2-1

OUT2-2

GNDO1

GNDO2

OUT3

OUT4

VCCO-N

−INS

DTC4

FB4

−INE4

CS4

MB39A110

3

■PIN DESCRIPTION

(Continued)

Block Pin No. Symbol I/O Descriptions

CH1

35 DTC1 I Dead time control terminal

36 FB1 O Error amplifier output terminal

37 −INE1 I Error amplifier inverted input terminal

38 CS1 Soft-start setting capacitor connection terminal

33 OUT1-1 O P-ch drive output block ground terminal

(External main side FET gate driving)

32 OUT1-2 O N-ch drive output block ground terminal

(External synchronous rectification side FET gate driving)

CH2

4 DTC2 I Dead time control terminal

3 FB2 O Error amplifier output terminal

2−INE2 I Error amplifier inverted input terminal

1CS2Soft-start setting capacitor connection terminal

31 OUT2-1 O P-ch drive output block ground terminal

(External main side FET gate driving)

30 OUT2-2 O N-ch drive output block ground terminal

(External synchronous rectification side FET gate driving)

CH3

16 DTC3 I Dead time control terminal

17 FB3 O Error amplifier output terminal

18 −INE3 I Error amplifier inverted input terminal

19 CS3 Soft-start setting capacitor connection terminal

27 OUT3 O P-ch drive output terminal

CH4

23 DTC4 I Dead time control terminal

22 FB4 O Error amplifier output terminal

21 −INE4 I Error amplifier inverted input terminal

20 CS4 Soft-start setting capacitor connection terminal

26 OUT4 O N-ch drive output terminal

OSC 13 CT Triangular wave frequency setting capacitor

connection terminal

12 RT Triangular wave frequency setting resistor

connection terminal

MB39A110

4

(Continued)

Block Pin No. Symbol I/O Descriptions

Control

6 CTL I Power supply control terminal

7 CTL1 I Control terminal

8 CTL2 I Control terminal

9 CTL3 I Control terminal

10 CTL4 I Contr ol termi nal

15 CSCP Short-circuit detection circuit capacitor connection

terminal

24 −INS I Short-circuit detection comparator inverted input

terminal

Power

34 VCCO-P P-ch drive output block power supply terminal

25 VCCO-N N-ch drive output block power supply terminal

5VCCPower supply terminal

11 VREF O Reference voltage output terminal

29 GNDO1 Drive output block ground terminal

28 GNDO2 Drive output block ground terminal

14 GND Ground terminal

MB39A110

5

■BLO C K DIAGR AM

VCCO-P

OUT2-1

OUT3

GNDO1

VCC

CTL

−INE1

CS1

FB1

DTC1

−INE2

CS2

FB2

DTC2

−INE3

CS3

FB3

DTC3

−INE4

CS4

−INS

CSCP

FB4

DTC4

VREF

P-ch

CH1

CH2

CH3

CH4

PWM

Comp.1

1.23 V

−

+

+−

+

+

IO = 300 mA

at VCCO = 7 V

P-ch

−

+

+−

+

+

P-ch

Drive3

−

+

+−

+

+

VREF

N-ch

SCP

Comp.

Drive4

SCP

OSC

CH

CTL UVLO

RT CT VREF

2.0 V

VREF VR Power

ON/OFF

CTL

bias

GND

1 V

0.9 V

0.4 V

−

+

+

−

+

−

+

+

37

38

36

35

2

1

3

4

18

19

17

16

21

20

22

23

24

15

CTL1 7

CTL2 8

CTL3 9

CTL4 10 12 13 11 14

6

5

29

OUT4

26

27

31

34

OUT1-1

33

VREF

1.23 V

VREF

1.23 V

VREF

1.23 V

N-ch

N-ch

PWM

Comp.2

PWM

Comp.3

PWM

Comp.4

GNDO2

28

OUT2-2

30

VCCO-N

25

OUT1-2

32

1 µA

1 µA

1 µA

100 kΩ

1 µA

IO = 300 mA

at VCCO = 7 V

IO = 300 mA

at VCCO = 7 V

IO= 300 mA

at VCCO = 7 V

IO = 300 mA

at VCCO = 7 V

IO = 300 mA

at VCCO = 7 V

Dead Time

Dead Time

(td = 50 ns)

Dead Time

(td = 50 ns)

Dead Time

Error

Amp1

Error

Amp2

Error

Amp3

Error

Amp4

Drive1-1

Drive2-1

Drive1-2

Drive2-2

L priority

L

priority

L

priority L priority

Threshold voltage

(1.23 V ± 1 %)

Threshold voltage

(1.23 V ± 1 %)

Threshold voltage

(1.23 V ± 1 %)

L

priority

Threshold voltage

(1.23 V ± 1 %)

L

priority

H : release

UVLO

H : SCP

L priority

L priority

ErrorAmp power supply

SCPComp. power supply

ErrorAmp reference

1.23 V

Short detection signal

(L: at short)

MB39A110

6

■ABSOLUTE MAXIMUM RATINGS

* : The packages are mounted on the epoxy board (10 cm × 10 cm).

WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current,

temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.

■RECOMMENDED OPERATING CONDITIONS

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the

semiconductor device. All of the device’s electrical characteristics are warranted when the device is

operated within these ranges.

Always use semiconductor devices within their recommended operating condition ranges. Operation

outside these ranges may adversely affect reliability and could result in device failure.

No warranty is made with respect to uses, operating conditions, or combinations not represented on

the data sheet. Users considering application outside the listed conditions are advised to contact their

representatives beforehand.

Parameter Symbol Condition Rating Unit

Min Max

Power supply voltage VCC VCC, VCCO terminal 12 V

Output current IOOUT1 to OUT4 terminal 20 mA

Peak output current IOP OUT1 to OUT4 terminal,

Duty ≤ 5% (t = 1 / fOSC×Duty) 400 mA

Power dissipation PDTa ≤ +25 °C 1680* mW

Storage temperature TSTG −55 +125 °C

Parameter Symbol Condition Value Unit

Min Typ Max

Power supply voltage VCC VCC, VCCO terminal 2.5 7 11 V

Reference voltage output current IREF VREF terminal −10mA

Input vo lta ge VINE −INE1 to −INE4 terminal 0 VCC − 0.9 V

−INS terminal 0 VREF V

VDTC DTC1 to DTC4 terminal 0 VREF V

Control input voltage VCTL CTL termin al 0 11 V

Output current IOOUT1 to OUT4 terminal −15 +15 mA

Osci llati on fre que nc y fOSC 0.21.022.0kHz

Timing capacitor CT27 100 680 pF

Timing resistor RT3.0 6.8 39 kΩ

Soft-start capacitor CSCS1 to CS4 terminal 0.1 1.0 µF

Short-c irc uit dete ct ion capac itor CSCP 0.1 1.0 µF

Referenc e vo ltag e outpu t

capacitor CREF 0.1 1.0 µF

Operating ambient temperature Ta −30 +25 +85 °C

MB39A110

7

■ ELECTRICAL CHARACTERISTICS (VCC = VCCO = 7 V, Ta = +25 °C)

* : Standard design value (Continued)

Parameter Sym-

bol Pin No Conditions Value Unit

Min Typ Max

1. Reference

voltage

block [VREF]

Output voltage

VREF1 11 VREF = 0 mA 1.98 2.00 2.02 V

VREF2 11 VCC = 2.5 V to 11 V 1.975 2.000 2.025 V

VREF3 11 VREF = 0 mA to −1 mA 1.975 2.000 2.025 V

Input stability Line 11 VCC = 2.5 V to 11 V 2* mV

Load stability Load 11 VREF = 0 mA to −1 mA 2* mV

Temperature

stability ∆VREF

/VREF 11 Ta = 0 °C to +85 °C0.20* %

Output current

at sh ort-circuit IOS 11 VREF = 0 V −300* mA

2. Under voltage

lockout protection

circuit block [UVLO]

Threshold

voltage VTH 33 VCC = 1.7 1.8 1.9 V

Hysteresis

width VH33 0.05 0.1 V

Reset voltage VRST 33 VREF = 1.5 1.7 1.85 V

3. Short-cir cui t

detection block

[SCP]

Threshold

voltage VTH 15 0.65 0.70 0.75 V

Input source

current ICSCP 15 −1.4 −1.0 −0.6 µA

4. Triangular

wave oscillator

block [OSC]

Oscillation

frequency

fOSC1 26, 27, 30 to 33 CT = 100 pF, RT = 6.8 kΩ0.97 1.02 1.07 MHz

fOSC2 26, 27, 30 to 33 CT = 100 pF, RT = 6.8 kΩ,

VCC = 2.5 V to 11 V 0.964 1.02 1.076 MHz

Frequency

input stability ∆fOSC/

fOSC 26, 27, 30 to 33 CT = 100 pF, RT = 6.8 kΩ,

VCC = 2.5 V to 11 V 1.0* %

Frequency

temperature

stability

∆fOSC/

fOSC 26, 27, 30 to 33 CT = 100 pF, RT = 6.8 kΩ,

Ta = 0 °C to +85 °C1.0* %

5. Soft-

start

block

[CS1 to CS4]

Charge current ICS 1, 19, 20, 38 CS1 to CS4 = 0 V −1.4 −1.0 −0.6 µA

MB39A110

8

(VCC = VCCO = 7 V, Ta = +25 °C)

*: Standard design value (Continued)

Parameter Sym-

bol Pin No Conditions Value Unit

Min Typ Max

6. Error amplifier

block

[Error Amp1 to

Error Amp4]

Threshold

voltage

VTH1 2, 18, 21, 37 VCC = 2.5 V to 11 V,

Ta = +25 °C1.217 1.230 1.243 V

VTH2 2, 18, 21, 37 VCC = 2.5 V to 11 V,

Ta = 0 °C to +85 °C1.215 1.230 1.245 V

Temperature

stability ∆VTH/

VTH 2, 18, 21, 37 Ta = 0 °C to +85 °C0.1* %

Input bias

current ΙB2, 18, 21, 37 −INE1 to −INE4 = 0 V −120 −30 nA

Voltage gain AV3, 17, 22, 36 DC 100* dB

Frequency

bandwidth BW 3, 17, 22, 36 AV = 0 dB 1.4* MHz

Output voltage VOH 3, 17, 22, 36 1.7 1.9 V

VOL 3, 17, 22, 36 40 200 mV

Output source

current ISOURCE 3, 17, 22, 36 FB1 to FB4 = 0.65 V −2−1mA

Output sink

current ISINK 3, 17, 22, 36 FB1 to FB4 = 0.65 V 150 200 µA

7. PWM

comparator block

[PWM Comp.1 to

PWM Comp.4]

Threshold

voltage

VT0 26, 27, 30 to 33 Duty cycle = 0%0.3 0.4 V

VT100 26, 27, 30 to 33 Duty cycle = 100%0.85 0.90 0.95 V

Input current IDTC 4, 16, 23, 35 DTC = 0.4 V −2.0 −0.6 µA

8. Output block

[Drive1 to Drive4]

Output source

current ISOURCE 26, 27, 30 to 33 Duty ≤ 5%

(t = 1 / fOSC × Duty) ,

OUT1 to OUT4 = 0 V −300* mA

Output sink

current ISINK 26, 27, 30 to 33 Duty ≤ 5%

(t = 1 / fOSC × Duty) ,

OUT1 to OUT4 = 7 V 300* mA

Output ON

resistor ROH 26, 27, 30 to 33 OUT1 to OUT4 = −15 mA 914Ω

ROL 26, 27, 30 to 33 OUT1 to OUT4 = 15 mA 914Ω

Dead time tD1 30 to 33 OUT2 −OUT1 50* ns

tD2 30 to 33 OUT1 −OUT2 50* ns

9. Short-circuit

detection

comparator block

[SCP Comp.]

Threshold

voltage VTH 33 0.97 1.00 1.03 V

Input bias

current IB24 −INS = 0 V −25 −20 −17 µA

MB39A110

9

(Continued) (VCC = VCCO = 7 V, Ta = +25 °C)

*: Standard design value

Parameter Sym-

bol Pin No Conditions Value Unit

Min Typ Max

10. Control block

[CTL, CHCTL]

Output ON

conditions VIH 6, 7 to 10 CTL, CTL1 to CTL4 2 11 V

Output OFF

conditions VIL 6, 7 to 10 CTL, CTL1 to CTL4 0 0.8 V

Input current ICTLH 6, 7 to 10 CTL, CTL1 to CTL4 = 3 V 30 60 µA

ICTLL 6, 7 to 10 CTL, CTL1 to CTL4 = 0 V  1µA

11. General

Standby

current ICCS 5 CTL, CTL1 to CTL4 = 0 V 02µA

ICCSO 25, 34 CTL = 0 V 01µA

Power supply

current ICC 5CTL = 3 V 34.5mA

MB39A110

10

■TYPICAL CHARACTERISTICS

(Continued)

Ta = +25 °C

CTL = 3 V

VREF= 0 mA

5

4

3

2

1

0024681012

Power supply current ICC (m A)

Reference voltage VREF (V)

Power Supply Current vs. Power Supply Voltage Reference Voltage vs. Power Supply Voltage

Power supply voltage VCC (V) Power supply voltage VCC (V)

Reference Voltage vs. CTL terminal Voltage

Reference voltag e VREF (V)

Ambient temperature Ta (°C)

Reference voltage VREF (V)

Reference Voltage vs. Ambient Temperature

CTL terminal voltage VCTL (V)

CTL terminal current ICTL (µA)

CTL terminal Curre nt vs. CTL terminal Voltage

CTL terminal voltage VCTL (V)

Ta = +25 °C

CTL = 3 V

5

4

3

2

1

0024681012

VCC = 7 V

CTL = 3 V

VREF= 0 mA

2.05

2.04

2.03

2.02

2.01

2.00

1.99

1.98

1.97

1.96

1.95

−40 −20 0 +20 +40 +60 +80 +100

Ta = +25 °C

VCC = 7 V

VREF= 0 mA

CTL = 3 V

5

4

3

2

1

0024681012

Ta = +25 °C

VCC = 7 V

200

180

160

140

120

100

80

60

40

20

0024681012

MB39A110

11

(Continued)

Ta = +25 °C

VCC = 7 V

CTL = 3 V

CT = 27 pF

10000

1000

100

10

CT = 100 pF

CT = 230 pF

CT = 680 pF

1 10 100 1000

Ta = +25 °C

VCC = 7 V

CTL = 3 V

RT = 3 kΩ

RT = 6.8 kΩ

RT = 15 kΩRT = 39 kΩ

10000

1000

100

10 10 100 1000 10000

Ta = +25 °C

VCC = 7 V

CTL = 3 V

RT = 6.8 kΩ

1.20

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20 0 400 800 1200 1600 2000

VCC = 7 V

CTL = 3 V

RT = 6.8 kΩ

CT = 100 pF

1.20

1.10

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20

−40 −20 0 +20 +40 +60 +80 +100

VCC = 7 V

CTL = 3 V

RT = 6.8 kΩ

CT = 100 pF

1100

1080

1060

1040

1020

1000

980

960

940

920

900

−40 −20 0 +20 +40 +60 +80 +100

Triangular Wave Upper and Lower Limit Voltage

vs. Ambien t Temperature

Triangular wave upper and

lower limit voltage VCT (V)

Ambient temperature Ta (°C)

Triangular Wave Oscil lation Frequency

vs. Timing Resis tor

Triangula r wav e oscil la tio n

frequency fOSC (kHz)

Timing resistor RT (kΩ)

Triangular Wave Oscillation Frequency

vs. Timing Capacitor

Triang ula r wav e oscillat ion

frequency fOSC (kHz)

Timing capacitor CT (pF)

Triangul ar Wav e Oscil lation Frequency

vs. Ambient Temperature

Triangular wave oscillation

frequency fOSC (kHz)

Ambient temperature Ta (°C)

Triangular wave upper and

lower limit voltage VCT (V)

Triangular Wave Upper and Lower Li mit Volt age

vs. Triangular Wave Oscillation Frequency

Triangular wave oscillation frequency fOSC (kHz)

Upper Upper

Lower

Lower

MB39A110

12

(Continued)

−

+

+

+37

38 36

1 µF

IN

10 kΩ

2.4 kΩ

240 kΩ

OUT

2.46 V

10 kΩ

1.5 V 1.23 V

40

30

20

10

0

−10

−20

−30

−40

180

90

0

−90

−180

1 k 10 k 100 k 1 M 10 M

φ

AV

Ta = +25 °C

VCC = 7 V

2000

1800

1600

1400

1200

1000

800

600

400

200

0

1680

−40 −20 0 +20 +40 +60 +80 +100

Error Amplifier Gain, Phase vs. Frequency

Gain AV (d B)

Phase φ (d eg)

Frequency f (Hz)

Power Dissipation vs. Ambient Temperature

Power diss ipa tio n PD (mW)

Ambient temperature Ta (°C)

Er ro r Amp1

the same as

other channels

MB39A110

13

■FUNCTION DESCRIPTION

1. DC/DC Conver ter Functions

(1) Reference Voltage Block (VREF)

The reference voltage circuit generates a temperature-compensated reference voltage (2.0 V Typ) from the

voltage sup plied from t he power supply termi nal (pin 5) . The voltage i s used as the reference voltage for the

IC’s internal circuit.

The reference voltage can supply a load current of up to 1 mA to an external device through the VREF terminal

(pin 11).

(2) Triangular-wave Oscillator Block (OSC)

The tr iangular wave oscillator incor porates a timing capacitor an d a timing resistor connected respectively to

the CT terminal (pin 13) and RT terminal (pin 12) to generate triangular oscillation wav ef orm amplitude of 0.4 V

to 0.9 V.

The triangular waveforms are input to the PWM comparator in the IC.

(3) Error Amplifier Bloc k (Error Amp1 to Error Amp4)

The err or a mplifier detects the DC/ DC conver ter ou tput voltage and ou tputs PW M con trol signals. In additi on,

an arbi trar y loop gain can be set by connectin g a feedback resistor and capacitor fro m the output ter minal to

inverted input terminal of the error amplifier, enabling stable phase compensation to the system.

Also, it is possible to prevent rush current at power supply start-up by connecting a soft-start capacitor with the

CS1 terminal (pin 38) to CS4 terminal (pin 20) which are the non-inv erted input terminal for Error Amp. The use

of Er ror Am p for soft-start detect ion m akes it pos sible for a system to o perate on a fixed soft-s tar t time that is

independent of the output load on the DC/DC conv erter.

(4) PWM Comparator Block (PWM Comp.1 to PWM Comp.4)

The PWM comparator is a voltage-to-pulse width modulator that controls the output duty depending on the input/

output voltage.

The out put tra nsis tor turns on w hil e the erro r ampl if ier ou tput voltag e and DTC voltage rema in h igh er tha n the

triangular wave voltage.

(5) Output Block (Drive1 to Drive 4)

The output block is in the totem pole type, capable of driving an e xternal P-ch MOS FET (channel 1 and 2 main

side and channel 3), and N-ch MOS FET (channel 1 and 2 synchronous rectification side and channel 4).

MB39A110

14

2. Channel Control Function

The main or each channel is turned on and off depending on the v oltage lev els at the CTL terminal (pin 6), CS1

terminal (pin 38), CS2 terminal (pin 1), CS3 terminal (pin 19), and CS4 terminal (pin 20).

Channel On/Off Setting Conditions

* : Undefined

Note : Note that current ov er stand-by current flows into VCC terminal when the CTL terminal is in “L” lev el and one

of terminals between CTL1 and CTL4 is set to “H” level. (Refer to “■ I/O EQUIVALENT CIRCUIT”.)

3. Protective Functions

(1) Timer-latch short-circuit protection circuit (SCP, SCP Comp.)

The short-circuit detection comparator (SCP) detects the output voltage level of each channel, and if any channel

output voltage becomes the short-circuit detection voltage or less, the timer circuits are actuated to start charging

the external capacitor CSCP connected to the CSCP terminal (pin 15).

When the capacitor (CSCP) voltage reaches about 0.7 V, the circuit is turned off the output transistor and sets the

dead time to 100 %.

In additi on, the shor t- circuit detect ion from extern al input is capa ble by using −INS ter minal (pin 24) on short-

circuit detection comparator (SCP Comp.) .

To release the actuated protection circuit, either turn the power supply off and on again or set the CTL terminal

(pin 6) to the “L” level to lower the VREF term inal (pin 11) voltage to 1.5 V (Min) or less. (Refer to “■SETTING

TIME CONSTANT FOR TIMER-LATCH SHORT-CIRCUIT PROTECTION CIRCUIT”.)

(2) Under voltage lockout protection circuit (UVLO)

The transient state or a momentary decrease in supply voltage, which occurs when the power supply is turned

on, may cause the IC to malfunction, resulting in breakdown or degradation of the system. To prevent such

malfunctions, under voltage lockout protection circuit detects a decrease in internal reference voltage with respect

to the power supply voltage, turn off the output transistor, and set the dead time to 100% while holding the CSCP

terminal (pin 15) at the “L” level.

The circuit restores the output transistor to normal when the supply voltage reaches the threshold voltage of the

undervoltage lockout protection circuit.

■PR OTECTION CIRCUIT OPERATING FUNCTION TABLE

This table refers to output condition when protection circuit is operating.

CTL CTL1 CTL2 CTL3 CTL4 Power CH1 CH2 CH3 CH4

L**** OFF OFF OFF OFF OFF

HLLLL ON OFF OFF OFF OFF

H H LLL ON ON OFF OFF OFF

HLHLL ON OFF ON OFF OFF

HLLH L ON OFF OFF ON OFF

HLLLHON OFF OFF OFF ON

H H H H H ON ON ON ON ON

Operating circuit OUT1-1 OUT1-2 OUT2-1 OUT2-2 OUT3 OUT4

Short-c irc uit pr otecti on ci rcui t H L H L H L

Under voltage lockout protection circuit H L H L H L

MB39A110

15

■SETTING THE OUTPUT VOLTAGE

■SETTING THE TRIANGULAR OSCILLATION FREQUENCY

The triangular oscillation frequency is determined by the timing resistor (RT) connected to the RT terminal

(pin 12), and the timing capacitor (CT) connected to the CT terminal (pin 13).

Triangular oscillation frequency : fOSC

−

+

+

V

O

R1

R2

−INEX

CSX

Error

Amp

1.23 V

V

O

(V) =(R1 + R2)

1.23

R2

X: Each channel No.

• CH1 to CH4

fOSC (kHz ) := 693600

CT (pF) × RT (kΩ)

MB39A110

16

■SETTING THE SOFT-START TIME

To prevent r ush cur rents w hen the IC i s tur ned on, you can set a soft-sta rt by connec ting s oft-sta rt c apaci tors

(CS1 to CS4) to the CS1 terminal (pin 38) to the CS4 terminal (pin 20), respectively.

Setting each CTLX from “L” to “H” switches to ch arge the exter nal soft- star t capac itors (C S1 to CS4) connec ted

to the CS1 to CS4 terminals at 1 µA.

The erro r amplifier outp ut (FB1 to FB4) is deter mined by compar ison betwee n the lower one of the potential s

at two non-inverted input terminals (1.23 V, CS terminal voltages) and the inverted input terminal voltage (−INE1

to −INE4).

The FB t ermi nal voltage during th e s oft-s tart peri od ( CS termina l voltage < 1.23 V) i s t herefore determ ine d by

comparison between the −INE terminal and CS terminal voltages. The DC/DC con verter output voltage rises in

proportion to the CS terminal voltage as the soft-start capacitor connected to the CS terminal is charged.

The soft-start time is obtained from the following formula:

Soft-start time: ts (time to output 100%)

ts (s) := 1.23 × CSX (µF)

−

+

+

VO

R1

R2

−INEX

VREF

CSX

CSX

FBX

CTLX

Error Amp

CHCTL

1.23 V

1 µA

X: Each channel No.

L priority

• Soft-Start Circuit

MB39A110

17

■TREATMENT WITHOUT USING CS TERMINAL

When not using the soft-start function, open the CS1 terminal (pin 38), the CS2 terminal (pin 1), the CS3 terminal

(pin 19), the CS4 terminal (pin 20).

1

19

CS2

CS3

38

20

CS1

CS4

“OPEN”

“OPEN”

“OPEN”

“OPEN”

• Without Setting Soft-Start Time

MB39A110

18

■SETTING TIME CONST ANT FOR TIMER-LATCH SHORT -CIRCUIT PROTECTION CIRCUIT

Each channel uses the short-circuit detection comparator (SCP) to always compare the error amplifier′s output

level to the reference voltage.

While DC/DC conv erter load conditions are stab le on all channels, the short-circuit detection comparator output

remains at “L” level, and the CSCP terminal (pin 15) is held at “L” level.

If the load condition on a channel changes rapidly due to a short-circuit of the load, causing the output voltage

to dro p, the output of the s hort-circui t d etecti on co mpa rator on that c han nel g oes to “H” l evel. Th is c au se s the

external short-circuit protection capacitor CSCP connected to the CSCP terminal to be charged at 1 µA.

Short-circuit detection time : tCSCP

tCSCP (s) := 0.70 × CSCP (µF)

When the capacitor CSCP is charged to the th reshold voltage (VTH := 0.70 V), the latch is set an d the exter nal

FET is turned off (dead time is set to 100%). At this time, the latch input is closed and the CSCP terminal

(pin 15) is held at “L” level.

In addition, the short-circuit detection from external input is capable by using −INS terminal (pin 24) on the

short-circuit detection comparator (SCP Comp.). The short-circuit detection operation starts when −INS terminal

voltage is less than threshold voltage (VTH := 1 V).

When the p ower supply is tu rn off and on again or VREF ter min al (pin 11 ) voltage i s less than 1.5 V (Min) by

setting CTL terminal (pin 6) to “L” le vel, the latch is released.

+

−

+

VO

R1

R2

−INEX

CSCP CTL

VREF

SR

FBX

SCP

Comp.

UVLO

Latch

1.1 V

−

+

Error

Amp

1.23 V

1 µA

15

X: Each channel No.

To each channel

Drives

• Timer-latch short-circuit protection circuit

MB39A110

19

■TREATMENT WITHOUT USING CSCP TERMINAL

When not using the timer-latch short-circuit protection circuit, connect the CSCP terminal (pin 15) to GND with

the shortest distance.

14

15

GND

CSCP

• Treatment without using CSCP terminal

MB39A110

20

■SETTING THE DEAD TIME

When th e device is set for step-u p or inver ted output bas ed on the st ep-up or step-up/down Ze ta conversion,

step-up/down Sepic conv ersion or flyback conv ersion, the FB terminal voltage may reach and e xceed the trian-

gular wave voltage due to load fluctuation. If t his c ase happens, the ou tpu t transi sto r is fixed to a full- ON s tate

(ON duty = 100 %). To prevent this, set the maxi mum duty of the outp ut transis tor. To set it, s et the voltage at

the DTC terminal by applying a resistive voltage divider to the VREF voltage as shown below.

When t he DTC ter minal voltag e is higher than the t riangular wave voltage, the output transist or is tur ned on.

The m aximum duty calculati on formula assuming that tr iangu lar wave amplit ude 0.5 V and triang ular wave

lower voltage := 0.4 V is given below.

When the DTC terminal is not used, connect it directly to the VREF terminal (pin 11) as shown below (when no

dead time is set).

=

=

DUTY (ON) Max =Vdt − 0.4 V

0.5 V × 100 (%) , Vdt = Rb

Ra + Rb × VREF

11 VREF

DTCX Ra

Rb Vdt

X: Each channel No.

• When using DTC to set dead time

11 VREF

DTCX

X: Each channel No.

• When no dead time is set

MB39A110

21

■I/O EQUIVALENT CIRCUIT

5

14

+

−

11

1.23 V

VREF

VCC

GND

79

kΩ

124

kΩ

CTL

GND

67

kΩ

104

kΩ

6CTLX

GND

76

kΩ

76

kΩ

RT

GND

VREF

(2.0 V)

12

+

−

0.7 V

CSX

GND

VREF

(2.0 V)

CT

GND

VREF

(2.0 V)

13

−INEX CSX

GND

VCC

VREF

(2.0 V)

FBX

1.23 V CSCP

2 kΩ

GND

VREF

(2.0 V)

15

DTCX

GND

VCC

FB1 to FB4 CT OUT1-X

OUTX

GNDO1

VCCO-P 34

29

GNDO2 28

OUT2-X

OUTX

GNDO1

VCCO-N 25

GNDO2

−INS (1 V)

GND

VCC

100 kΩ

VREF

(2.0 V)

24

X: Each channel No.

〈〈Reference voltag e block 〉〉 〈〈Control block〉〉 〈〈Channel control block〉〉

〈〈Short-start block〉〉 〈〈Tri ang ula r wave osc illa tor

block (RT) 〉〉

〈〈Triangular wave oscillator

block (CT)〉〉

〈〈Error amplifier block (CH1 to CH4) 〉〉 〈〈Short-circuit detection

comparat or block〉〉

〈〈PWM comparator block〉〉 〈〈Output block P-ch (CH1 to CH3) 〉〉

〈〈Short-circuit detection block〉〉

〈〈Output block N-ch (CH1, CH2, CH4) 〉〉

ESD

Protection

Element

ESD

Protection

Element

ESD

Protection

Element

MB39A110

22

■APPLICATION EXAMPLE

A

B

C

D

A

B

D

C

R24

0.2 kΩR25

9.1 kΩ

R26

20 kΩ

C20

0.15 µF

C19

0.1 µF

R27

1 kΩ

R9

3.3 kΩR10

22 kΩ

R11

15 kΩ

C10

0.15 µF

C11

0.1 µF

R12

1 kΩ

R14

3 kΩR15

43 kΩ

R16

15 kΩ

C16

0.15 µF

C15

0.1 µF

R17

1 kΩ

R18

12 kΩ

R22

33 kΩ

R23

20 kΩ

R13

6.8 kΩ

R19

100 kΩ

R20

10 kΩ

C17

0.15 µF

C18

0.1 µF

C14

2200 pF

C13

100 pF C12

0.1 µF

C21

0.1 µF

R21

1 kΩ

C22 0.1 µF

C1

1 µFC2

2.2 µF

C23

0.1 µF

Q1

Q2

L1

6.8

µH

6.8

µH

10

µH

D1

VO1

(1.8 V)

IO1 =

550 mA

C3

1 µFC4

2.2 µF

Q3

Q4

L2

D2

VO2

(3.3 V)

IO2 =

600 mA

C5

1 µF

C7

1 µF

C6

2.2 µF

C8

2.2 µFC9

2.2 µF

Q5

Q6

L3

D3

D4

D5

T1

VO3

(5.0 V)

IO3 =

250 mA

VO4-1

(15 V)

IO4-1 =

40 mA

VO4-2

(−15 V)

IO4-2 =

−10 mA

VIN

(5.5 V to

8.5 V)

VCCO-P

OUT2-1

OUT3

GNDO1

VCC

CTL

−INE1

CS1

FB1

DTC1

−INE2

CS2

FB2

DTC2

−INE3

CS3

FB3

DTC3

−INE4

CS4

−INS

CSCP

FB4

DTC4

CH1

CH2

CH3

CH4

RT CT VREF GND

37

38

36

35

2

1

3

4

18

19

17

16

21

20

22

23

24

15

CTL1 7

CTL2 8

CTL3 9

CTL4 10 12 13 11 14

6

5

29

OUT4

26

27

31

34

OUT1-1

33

GNDO2

28

OUT2-2

30

VCCO-N

25

OUT1-2

32

Step-

down

Step-

down

Step-

down

Trans-

former

Short-circuit

detection signal

(L : at short-circuit)

MB39A110

23

■PARTS LIST

Note : SANYO : SANYO Electric Co., Ltd.

TDK : TDK Corporation

SUMIDA : SUMIDA Electric Co., Ltd.

ssm : SUSUMU Co., Ltd.

COMPONENT ITEM SPECIFICATION VENDOR PARTS No.

Q1, Q3, Q5

Q2, Q4

Q6

P-ch FET

N-ch FET

N-ch FET

VDS = −20 V, ID = −1.0 A

VDS = 20 V, ID = 1.8 A

VDS = 30 V, ID = 1.4 A

SANYO

SANYO

SANYO

MCH3307

MCH3405

MCH3408

D1 to D3

D4, D5 Diode

Diode VF = 0.4 V (Max) , IF = 1 A

VF = 0.55 V (Max) , IF = 0.5 A SANYO

SANYO SBS004

SB05-05CP

L1, L2

L3 Inductor

Inductor 6.8 µH

10 µH1.1 A, 47 mΩ

0.94 A, 56 mΩ

TDK

TDK

RLF5018T-

6R8M1R1

RLF5018T-

100MR94

T1 Transformer SUMIDA CLQ52 5388-T139

C1, C3, C5, C7

C2, C4, C6, C8

C9, C11

C10, C16, C17

C11, C12, C15

C13

C14

C18, C19

C20

C21 to C23

Ceramics Condenser

Ceramics Condenser

Ceramics Condenser

Ceramics Condenser

Ceramics Condenser

Ceramics Condenser

Ceramics Condenser

Ceramics Condenser

Ceramics Condenser

Ceramics Condenser

1 µF

2.2 µF

2.2 µF

0.15 µF

0.1 µF

100 pF

2200 pF

0.1 µF

0.15 µF

0.1 µF

25 V

25 V

25 V

16 V

50 V

50 V

50 V

50 V

16 V

50 V

TDK

TDK

TDK

TDK

TDK

TDK

TDK

TDK

TDK

TDK

C3216JB1E105K

C3216JB1E225K

C3216JB1E225K

C1608JB1C154M

C1608JB1H104K

C1608CH1H101J

C1608JB1H222K

C1608JB1H104K

C1608JB1C154M

C1608JB1H104K

R9

R10

R11, R16

R12, R17, R21

R13

R14

R15

R18

R19

R20

R22

R23, R26

R24

R25

R27

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

Resistor

3.3 kΩ

22 kΩ

15 kΩ

1 kΩ

6.8 kΩ

3 kΩ

43 kΩ

12 kΩ

100 kΩ

10 kΩ

33 kΩ

20 kΩ

200 Ω

9.1 kΩ

1 kΩ

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

0.5%

ssm

ssm

ssm

ssm

ssm

ssm

ssm

ssm

ssm

ssm

ssm

ssm

ssm

ssm

ssm

RR0816P-332-D

RR0816P-223-D

RR0816P-153-D

RR0816P-102-D

RR0816P-682-D

RR0816P-302-D

RR0816P-433-D

RR0816P-123-D

RR0816P-104-D

RR0816P-103-D

RR0816P-333-D

RR0816P-203-D

RR0816P-201-D

RR0816P-912-D

RR0816P-102-D

MB39A110

24

■REFERENCE DATA

(Continued)

Ta = +25 °C

VO1 = 1.8 V, 550 mA

VO2 = 3.3 V, 600 mA

VO3 = 5 V, 250 mA

VO4-1 = 15 V, 40 mA

VO4-2 = −15 V, −10 mA

fOSC = 1 MHz setting

100

95

90

85

80

75

70

5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

Ta = +25 °C

V

O

1 = 1.8 V, 550 mA

V

O

2 = 3.3 V, 600 mA

V

O

3 = 5 V, 250 mA

V

O

4-1 = 15 V, 40 mA

V

O

4-2 = −15 V, −10 mA

f

OSC

= 1 MHz setting

100

95

90

85

80

75

70

5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0

CH3

CH2

CH1

CH4

TOTAL efficiency η (%)

Input voltage VIN (V)

TOTAL Efficiency vs. Input Voltage

Note: On ly con cerned CH is ON .

Include external SW Tr

operating current.

Each CH efficiency η (%)

Input voltage VIN (V)

Each CH Efficiency vs. Input Voltage

MB39A110

25

(Continued)

Conversion efficiency η (%)

Load current lO (mA)

Conversion Eff iciency vs. Load Current (CH4)

Conversion efficiency η (%)

Load current IO (mA)

Conversion Eff iciency vs. Load Current (CH1, CH2, CH3)

Ta = +25 °C

VIN = 7.2 V

100

95

90

85

80

75

700 100 200 300 400 500 600 700 800 900 1000

CH3

CH2

CH1

IO2 ≤ 120 mA:

discontinuance mode

Note: Only conc erned CH is ON.

Include external SW Tr

operating current.

Ta = +25 °C

VIN = 7.2 V

100

95

90

85

80

75

700102030405060

CH4

IO4−1 ≤ 30 mA:

discontinuance mode

Notes : •Only feedback controlling

output is get by using

transformer channel.

VO4-2: IO = −10 mA fixed

•Only conc ern ed CH is ON.

Include external SW Tr

operating current.

MB39A110

26

(Continued)

Switching Wave Form

OUT1-1 (V)

OUT1-2 (V)

CH1

10

5

010

5

0

VD (V)

t (µs)

VIN = 7.2 V

VO1 = 1.8 V

IO1 = 550 mA

8

6

4

2

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

OUT2-1 (V)

OUT2-2 (V)

CH2

10

5

010

5

0

VD (V)

t (µs)

VIN = 7.2 V

VO2 = 3.3 V

IO2 = 600 mA

8

6

4

2

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

OUT3 (V) CH3

10

5

0

VD (V)

t (µs)

VIN = 7.2 V

VO3 = 5 V

IO3 = 250 mA

8

6

4

2

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

MB39A110

27

(Continued)

OUT4 (V) CH4

10

5

0

VD (V)

t (µs)

VIN = 7.2 V

VO4-1 = 15 V

IO4-1 = 40 mA

VO4-2 = −15 V

IO4-1 = −10 mA

8

6

4

2

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

MB39A110

28

■USAGE PRECAUTIONS

• Printed circuit board ground lines should be set up with consideration for common impedance.

• Take appropriate static electricity measures.

• Containers for semiconductor materials should have anti-static protection or be made of conductive material.

• After mounting, printed circuit boards should be stored and shipped in conductive bags or containers.

• Work platforms, tools, and instruments should be properly grounded.

• Working personnel should be grounded with resistance of 250 kΩ to 1 MΩ between body and ground.

• Do not apply negative voltages.

• The use of n egative voltages below −0.3 V may create paras itic transist ors on LSI li nes, which c an cause

malfunction.

■ORDERING INFORMATION

■EV BOARD ORDERING INFORMATION

■RoHS COMPLIANCE INFORMATION OF LEAD (Pb) FREE VERSION

The LS I products of Fujits u Microele ctronic s with “E1 ” are com pliant wit h RoHS Dir ective , and has o bser ved

the standard of lead, cadmium, mercury, Hexa valent chromium, polybrominated biphenyls (PBB) , and polybro-

minated diphenyl ethers (PBDE) .

The product that conforms to this standard is added “E1” at the end of the part number.

■MARKING FORMAT (LEAD FREE VERSION)

Part number Package Remarks

MB39A110PFT-❏❏❏E1 38-pin plastic TSSO P

(FPT-38P-M03) Lead Free version

EV board part No. EV board version No. Remarks

MB39A1 10E VB Board Rev. 1.0 TSSOP - 38P

MB39A110

XXXX E1

XXX

INDEX

Lead Free version

MB39A110

29

■LABELING SAMPLE (LEAD FREE VERSION)

2006/03/01

ASSEMBLED IN JAPAN

G

QC PASS

(3N) 1MB123456P-789-GE1

1000

(3N)2 1561190005 107210

1,000

PCS

0605 - Z01A

1000

1/1

1561190005

MB123456P - 789 - GE1

MB123456P - 789 - GE1

MB123456P - 789 - GE1

Pb

Lead Free version

lead-free mark

JEITA logo JEDEC logo

MB39A110

30

■MB39A110PFT-❏❏❏E1

RECOMMENDED CONDITIONS OF MOISTURE SENSITIVITY LEVEL

[Temperature Profile for FJ Standard IR Reflow]

(1) IR (infrared reflow)

(2) Manual soldering (partial heating method )

Conditions : Temperature 400 °C Max

Times : 5 s max/pin

Item Condition

Mounting Method IR (infrared reflow) , Manual soldering (partial heating method)

Mounting tim es 2 times

Storage period

Before opening Please use it within two years after

Manufacture.

From opening to the 2nd

reflow Less than 8 days

When the storage period after

opening was exceeded Please processes within 8 days

after baking (125 °C, 24H)

Storage conditions 5 °C to 30 °C, 70%RH or less (the lowest possible humidity)

260 °C

(e)

(d')

(d)

255 °C

170 °C

190 °C

RT (b)

(a)

(c)

to

Note : Temperature : the top of the package body

(a) Te mperat ure Incr ease grad ient : Averag e 1 °C/s to 4 °C/s

(b) Preliminary heating : Temperature 170 °C to 190 °C, 60 s to 180 s

(c) Tem perat ure Increas e grad ient : Averag e 1 °C/s to 4 °C/s

(d) Actual heating : Temperature 260 °C Max; 255 °C or more, 10 s or less

(d’) : Temperature 230 °C or more, 40 s or less

or

Temperature 225 °C or more, 60 s or less

or

Temperature 220 °C or more, 80 s or less

(e) Cooling : Natural cooling or forced cooling

H rank : 260 °C Max

MB39A110

31

■PACKAGE DIMENSION

38-pin plastic TSSOP Lead pitch 0.50 mm

Package width

×

package length

4.40 × 9.70 mm

Lead shape Gullwing

Sealing method Plastic mold

Mounting height 1.10 mm MAX

38-pin plastic TSSOP

(FPT-38P-M03)

(FPT-38P-M03)

C

2002 FUJITSU LIMITED F38003Sc-1-1

0.127±0.05

(.005±.002)

9.70±0.10(.382±.004)

4.40±0.10 6.40±0.10

(.252±.004)(.173±.004)

0.10(.004)

0.50(.020)

0.10±0.10

(.004±.004)

(.024±.004)

0.60±0.10

0.25(.010)

INDEX

1.10(.043)

0.90±0.05

(.035±.002)

9.00(.354)

0~8˚

MAX

Dimensions in mm (inches).

Note: The values in parentheses are reference values.

FUJITSU MICROELECTRONICS LIMITED

Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,

Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387

http://jp.fujitsu.com/fml/en/

For further information please contact:

North and South America

FUJITSU MICROELECTRONICS AMERICA, INC.

1250 E. Arques Avenue, M/S 333

Sunnyvale, CA 94085-5401, U.S.A.

Tel: +1-408-737-5600 Fax: +1-408-737-5999

http://www.fma.fujitsu.com/

Europe

FUJITSU MICROELECTRONICS EUROPE GmbH

Pittlerstrasse 47, 63225 Langen,

Germany

Tel: +49-6103-690-0 Fax: +49-6103-690-122

http://emea.fujitsu.com/microelectronics/

Korea

FUJITSU MICROELECTRONICS KOREA LTD.

206 KOSMO TOWER, 1002 Daechi-Dong,

Kangnam-Gu,Seoul 135-280

Korea

Tel: +82-2-3484-7100 Fax: +82-2-3484-7111

http://www.fmk.fujitsu.com/

Asia Pacific

FUJITSU MICROELECTRONICS ASIA PTE LTD.

151 Lorong Chuan, #05-08 New Tech Park,

Singapore 556741

Tel: +65-6281-0770 Fax: +65-6281-0220

http://www.fujitsu.com/sg/services/micro/semiconductor/

FUJITSU MICROELECTRONICS SHANGHAI CO., LTD.

Rm.3102, Bund Center, No.222 Yan An Road(E),

Shanghai 200002, China

Tel: +86-21-6335-1560 Fax: +86-21-6335-1605

http://cn.fujitsu.com/fmc/

FUJITSU MICROELECTRONICS PACIFIC ASIA LTD.

10/F., World Commerce Centre, 11 Canton Road

Tsimshatsui, Kowloon

Hong Kong

Tel: +852-2377-0226 Fax: +852-2376-3269

http://cn.fujitsu.com/fmc/tw

All Rights Reserved.

The contents of this document are subject to change without notice.

Customers are advised to consult with sales representatives before ordering.

The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose

of reference to show examples of operations and uses of FUJITSU MICROELECTRONICS device; FUJITSU MICROELECTRONICS

does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporat-

ing the device based on such information, you must assume any responsibility arising out of such use of the information.

FUJITSU MICROELECTRONICS assumes no liability for any damages whatsoever arising out of the use of the information.

Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use

or exercise of any intellectual property right, such as patent right or copyright, or any other right of FUJITSU MICROELECTRONICS

or any third party or does FUJITSU MICROELECTRONICS warrant non-infringement of any third-party's intellectual property right or

other right by using such information. FUJITSU MICROELECTRONICS assumes no liability for any infringement of the intellectual

property rights or other rights of third parties which would result from the use of information contained herein.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without

limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured

as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect

to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in

nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in

weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite).

Please note that FUJITSU MICROELECTRONICS will not be liable against you and/or any third party for any claims or damages arising

in connection with above-mentioned uses of the products.

Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by

incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current

levels and other abnormal operating conditions.

Exportation/release of any products described in this document may require necessary procedures in accordance with the regulations of

the Foreign Exchange and Foreign Trade Control Law of Japan and/or US export control laws.

The company names and brand names herein are the trademarks or registered trademarks of their respective owners.

Edited Strategic Business Development Dept.