Data Sheet Schottky barrier diode RB215T-40 Applications Switching power supply Dimensions (Unit : mm) Structure Features 1) Cathode common dual type.(TO-220) 2) Low IR 3) High reliability (1) (2) (3) 4 215 Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25C) Parameter Limits Symbol VRM VR Io IFSM Tj Tstg (*1)Business frequencies, 1/2 Io per diode, Tc=121C 45 40 20 100 150 40 to 150 Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current(*1) Forward current surge peak (60Hz/1cyc) (*1) Junction temperature Storage temperature Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Symbol VF Unit V V A A C C Min. Typ. Max. Unit IR - - 0.55 500 V A jc - - 1.75 C/W 1/3 Conditions IF=10A VR=40V junction to case 2011.04 - Rev.E Data Sheet RB215T-40 Electrical characteristics curves 1000000 10 Ta=75C Ta=25C Ta=-25C 0.1 f=1MHz Ta=75C 1000 Ta=25C 100 Ta=-25C 10 1 100 10 0.1 100 200 300 400 500 1 0 600 5 10 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 15 20 25 30 Ta=25C IF=3A n=30pcs 480 470 460 AVE:472.9mV 700 600 500 400 300 AVE:78.7uA 200 150 100 50 AVE:176.0A Ta=25C f=1MHz VR=0V n=10pcs 2490 2480 2470 2460 2450 AVE:2515.6pF Ct DISPERSION MAP 1000 25 AVE:27.4ns 20 Ta=25C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 10 5 Ifsm 8.3ms 100 1 100 100 10 1ms 10 IF=10A time Rth(j-a) 300us Mounted on epoxy board Rth(j-c) 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 100 0.001 20 D=1/2 DC Sin(=180) 10 0 0.1 1 100 30 IM=100mA FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (C/W) PEAK SURGE FORWARD CURRENT:I FSM(A) t 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP Ifsm 8.3ms 1cyc 10 IFSM DISPERSION MAP 1000 30 2500 0 0 25 2510 PEAK SURGE FORWARD CURRENT:I FSM(A) REVERSE RECOVERY TIME:trr(ns) 8.3ms 200 20 2520 0 30 1cyc 15 2530 IR DISPERSION MAP Ifsm 10 2540 100 VF DISPERSION MAP 300 5 2550 800 450 250 0 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS Ta=25C VR=40V n=30pcs 900 REVERSE CURRENT:IR(uA) 490 40 REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS 1000 500 35 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 FORWARD VOLTAGE:V F(mV) 10000 1000 10000 0.01 PEAK SURGE FORWARD CURRENT:I FSM(A) Ta=125C CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=125C 1 Ta=150C 100000 REVERSE CURRENT:IR(uA) FORWARD CURRENT:I F(A) Ta=150C 0.01 0.1 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 2/3 1000 0 10 20 30 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS 40 2011.04 - Rev.E Data Sheet RB215T-40 10 50 50 6 D=1/2 DC 4 Sin(=180) 2 0 40 DC D=1/2 VR t T 30 0V D=t/T VR=20V Tj=150C 20 10 Sin(=180) 0 0 10 20 30 40 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 8 0V Io 0A Io 0A 40 VR t DC D=1/2 T D=t/T VR=20V Tj=150C 30 20 10 Sin(=180) 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(C) Derating Curve"(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(C) Derating Curve"(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 AVE:25.7kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.E Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A