Data Sheet
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Schottky barrier diode
RB215T-40
Applications Dimensions (Unit : mm) Structure
Switching power supply
Features
1) Cathode common dual type.(TO-220)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planar
Absolute maximum ratings (Ta=25C)
Symbol Unit
Reverse voltage (repetitive peak) VRM V
VRV
Average rectified forward current(*1) Io A
Forward current surge peak (60Hz/1cyc) (*1) IFSM A
Tj C
Tstg C
Electrical characteristic (Ta=25C)
Symbol Min. Typ. Max. Unit
VF- - 0.55 V IF=10A
Reverse current IR- - 500 μAVR=40V
Thermal impedance jc - - 1.75 C/W junction to case
Conditions
Junction temperature 150
Storage temperature 40 to 150
Parameter
Forward voltage
Parameter Limits
45
Reverse voltage (DC) 40
20
100
(*1)Business frequencies, 1/2 Io per diode, Tc=121C
(1) (2) (3)
215
4
1/3 2011.04 - Rev.E
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Data Sheet
RB215T-40 　
Electrical characteristics curves
0
10
20
30
0 10203040
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=100mA
I
F
=10A
300us
time
Mounted on epoxy board
10
100
1000
110100
t
Ifsm
0
5
10
15
20
25
30
AVE:27.4ns
Ta=25C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
10
100
1000
1 10 100
8.3ms
Ifsm
1cyc
8.3ms
0
100
200
300
400
500
600
700
800
900
1000
450
460
470
480
490
500
1
10
100
1000
10000
0 5 10 15 20 25 30
f=1MHz
0.1
1
10
100
1000
10000
100000
1000000
0 5 10 15 20 25 30 35 40
0.01
0.1
1
10
0 100 200 300 400 500 600
FORWARD VOLTAGE:V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:I
F
(A)
REVERSE CURRENT:I
R
(uA)
REVERSE VOLTAGE:V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(uA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (C/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
Ta=-25C
Ta=125C
Ta=25C
Ta=150C
Ta=-25C
Ta=25C
Ta=75C
Ta=150C
AVE:472.9mV
Ta=25C
I
F
=3A
n=30pcs
Ta=25C
V
R
=40V
n=30pcs
AVE:78.7uA
2450
2460
2470
2480
2490
2500
2510
2520
2530
2540
2550
AVE:2515.6pF
Ta=25C
f=1MHz
V
R
=0V
n=10pcs
0
50
100
150
200
250
300
AVE:176.0A
8.3ms
Ifsm 1cyc
DC
D=1/2
Sin(=180)
Ta=125C
Ta=75C
I
FSM
DISPERSION MAP
2/3 2011.04 - Rev.E
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RB215T-40 　
0
2
4
6
8
10
0 10203040
D=1/2
DC
Sin(=180)
0
10
20
30
40
50
0 25 50 75 100 125 150
REVERSE POWER
DISSIPATION:P
R
(W)
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(C)
Derating Curve"(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
0
10
20
30
40
50
0 255075100125150
TTj=150C
D=t/T
tV
R
Io
V
R
=20V
0A
0V
TTj=150C
D=t/T
tV
R
Io
V
R
=20V
0A
0V
D=1/2
Sin(=180)
DC
Sin(=180)
D=1/2
DC
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
AVE:25.7kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
3/3 2011.04 - Rev.E
R1120A
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© 2011 ROHM Co., Ltd. All rights reserved.
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Notes