SWITCHES - CHIP
4
4 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Parameter Frequency Min. Typ. Max. Units
Insertion Loss DC - 6.0 GHz
DC - 8.0 GHz
1.8
1.9
2.1
2.2
dB
dB
Isolation
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8.0 GHz
44
37
34
30
49
42
39
35
dB
dB
dB
dB
Return Loss “On State” DC - 2.0 GHz
DC - 8.0 GHz
10
7
14
10
dB
dB
Return Loss “Off State” DC - 8.0 GHz 7 10 dB
Input Power for 1 dB Compression 0.5 - 8.0 GHz 17 21 dBm
Input Third Order Intercept
(Two-Tone Input Power= +7 dBm Each Tone) 0.5 - 8.0 GHz 37 40 dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 8.0 GHz
35
150
ns
ns
HMC344
General Description
Features
Functional Diagram
The HMC344 is a broadband non-re ective GaAs
MESFET SP4T switch chip. Covering DC to 8 GHz,
this switch offers high isolation, low insertion loss,
and a compact form factor. This switch also includes
an on board binary decoder circuit which reduces
the number of required logic control lines to two. The
switch operates using a negative control voltage of
0/-5V, and requires a xed bias of -5V. All data is tested
with the chip in a 50 Ohm test xture connected via
0.0 25 mm (1 mil) diam eter wire bond s of minimal length
0.31 mm (12 mils). This SP4T switch is also available
in SMT packaged form as the HMC344LC3.
Broadband Performance: DC - 8 GHz
Non-Re ective Topology
Low Insertion Loss: 1.8 dB @ 6 GHz
Integrated 2:4 TTL Decoder
Small Size: 1.08 x 1.05 x 0.10 mm
Electrical Speci cations, TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System
Typical Applications
The HMC344 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
v06.0709
SWITCHES - CHIP
4
4 - 21
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Third Order Intercept Point
Return Loss 0.1 and 1 dB Input Compression Point
Insertion Loss vs. Temperature Isolation
-4
-3
-2
-1
0
1
0123456789
+ 25C
+ 85C
- 55C
INSERTION LOSS (dB)
FREQUENCY (GHz)
15
17
19
21
23
25
23456789
1dB Compression Point
0.1dB Compression Point
INPUT COMPRESSION POINT (dBm)
FREQUENCY (GHz)
35
37
39
41
43
45
123456789
RF1
RF2
RF3
RF4
INPUT THIRD ORDER INTERCEPT (dBm)
FREQUENCY
(
GHz
)
-20
-15
-10
-5
0
0123456789
RFC
RF1, RF2, RF3, RF4 ON
RF1, RF2, RF3, RF4 OFF
RETURN LOSS (dB)
FREQUENCY (GHz)
-80
-60
-40
-20
0
0123456789
RF1
RF2
RF3
RF4
ISOLATION (dB)
FREQUENCY (GHz)
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
SWITCHES - CHIP
4
4 - 22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Truth TableAbsolute Maximum Ratings
Bias Voltage & Current
Control Input Signal Path State
A B RF COM to:
High High RF1
Low High RF2
High Low RF3
Low Low RF4
Vee Range = -5 Vdc ±10%
Vee
(V)
Idd (Typ)
(mA)
Idd (Max)
(mA)
-5 3 6
Bias Voltage Range (Vee) -7V
Control Voltage Range (A & B) Vee -0.5V to +1V
Channel Temperature 150 °C
Thermal Resistance
(Insertion Loss Path) 143 °C/W
Thermal Resistance
(Terminated Path) 1,030 °C/W
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Maximum Input Power +24 dBm
ESD Sensitivity (HBM) Class 1A
TTL/CMOS Control Voltages
State Bias Condition
Low -3V to 0 Vdc @ 60 uA Typ.
High -5 to 4.2 Vdc @ 5 uA Typ.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
SWITCHES - CHIP
4
4 - 23
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
NOTES:
1. DIMENSIONS IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS 0.004”.
3. TYPICAL BOND PAD IS 0.004” SQUARE.
4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS.
Die Packaging Information [1]
Standard Alternate
WP-2 (Waffle Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
SWITCHES - CHIP
4
4 - 24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
TTL Interface Circuit
Note:
Control inputs A and B can be driven directly with TTL logic with -5 Volts
applied to the HCT logic gates Vee pin and to Vee (pad) of the RF Switch.
Pad Descriptions
Pad Number Function Description Interface Schematic
1, 2, 3,
4, 5, 10
RF4, RFC, RF1,
RF2, RF3
These pads are DC coupled and matched to 50 Ohms.
Blocking capacitors are required.
6 A See truth table and control voltage table.
7 B See truth table and control voltage table.
8 Vee Supply Voltage -5.0 Vdc ±10%
9, Die
Bottom GND Die bottom and pad must be connected to RF/DC ground.
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
SWITCHES - CHIP
4
4 - 25
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
HMC344
v06.0709
GaAs MMIC SP4T NON-REFLECTIVE
SWITCH, DC - 8 GHz
