NTE2390
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Description:
The NTE2390 is an N–Channel Enhancement Mode Power MOS Field Effect Transistor in a TO220
type package designed for low voltage, high speed power switching applications such as switching
regulators, converters, solenoid, and relay drivers.
Features:
DSilicon Gate for Fast Switching Speeds
DIDSS, VDC(on), VGS(th), and SOA Specified at Elevated Temperatures.
DRugged – SOA is Power Dissipation Limited
DSource–to–Drain Diode Characterized for Use With Inductive Loads
Absolute Maximum Ratings:
Drain–Source Voltage, VDSS 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage (RGS = 1MΩ), VDGR 60V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, VGS ±20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, ID
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD75W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.6W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, RthJC 1.67°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Ambient, RthJA 30°C/W. . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During soldering), TL+275°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Drain–Source Breakdown Voltage V(BR)DSS ID = 0.25mA, VGS = 0 60 – – V
Zero–Gate Voltage Drain Current IDSS VGS = 0, VDS = Max Rating – – 0.2 mA
VGS = 0, VDS = 48V, TJ = +125°C– – 1.0 mA
Gate–Body Leakage Current, Forward IGSSF VDS = 0, VGSF = 20V – – 100 nA
Gate–Body Leakage Current, Reverse IGSSR VDS = 0, VGSR = 20V – – 100 nA
ON Characteristics (Note 1)
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 1mA 2.0 –4.5 V
VDS = VGS, ID = 1mA, TJ = +100°C 1.5 –4.0 V
Static Drain–Source On Resistance rDS(on) VGS = 10V, ID = 6A – – 0.2 Ω
Drain–Source ON–Voltage VDS(on) VGS = 10V, ID = 12A – – 3.0 V
VGS = 10V, ID = 6A, TJ = 100°C––2.8 V
Forward Transconductance gfs VDS = 15V, ID = 6A 4– – mhos
Dynamic Characteristics
Input Capactiance Ciss VDS = 25V, VGS = 0, – – 400 pf
Output Capacitance Coss f = 1MHz – – 300 pf
Reverse Transfer Capactiance Crss – – 100 pf
Switching Characteristics (TJ = +100°C, Note 1)
Turn–On Time td(on) VDD = 25V, ID = 0.5 Rated ID,
Ω
– – 60 ns
Rise Time tr Rgen = 50Ω– – 160 ns
Turn–Off Delay Time td(off) – – 80 ns
Fall Time tf– – 110 ns
Total Gate Charge QgVDS = 48V, VGS = 10V, –13 26 nC
Gate–Source Charge Qgs ID = Rated ID–6–nC
Gate–Drain Charge Qgd –7–nC
Source Drain Diode Characteristics (Note 1)
Forward ON Voltage VSD IS = Rated ID, VGS = 0 –1.8 3.2 V
Forward Turn–On Time ton Limited by stray inductance
Reverse Recovery Time trr –300 –ns
Internal Package Inductance
Internal Drain Inductance LdMeasured from the contact screw
on tab to center of die –3.5 –nH
Measured from the drain lead 0.25”
from package to center of die –4.5 –nH
Internal Source Inductance LsMeasured from the source lead
0.25” from package to source bond
pad
–7.5 –nH
Note 1. Pulse test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
.420 (10.67)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.250 (6.35)
Max
.147 (3.75) Dia Max
.070 (1.78) Max
.100 (2.54)
Gate
Drain/Tab
Source
.110 (2.79)
