_ |] n-channel JFETs esti ri Perf C NP designed for... See Section 5S mn @ Smaill-Signal Low Noise BENEFITS > Amplifiers Operates from High Supply Voltages u BVgss > 50 V 0 nw 2 x) & Oo o TO-18 See Section 7 * ABSOLUTE MAXIMUM RATINGS (25C) Gate-Drain or Gate-Source Voltage (Note 1) ........ -50V Gate Current 2... 0... 0. cece cece eee ee eee es 1OMA o Total Device Dissipation at (or below) 25C Free-Air Temperature (Note 2) .............. 300 mW Gc Storage Temperature Range.............. -65 to +200C s D 8 *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N3458 2N3459 2N3460 Characteristic Unit Test Conditions Min Max Min Max Min Max 1 ; Gate R current -0.25 | -025{ | -0.25] nA V 30 V. Vos <0 ~_ ate Reverse Curren =~ , = ___ 2] | Ss 05 05 7o5|[ ua | %& ds 150C Gate-! 3] 5 | BVass voltage Breakdown | 69 -50 -60 v. | Ig=-1H#A, Vps=0 T al fh Drain Cutoff Cr ' ' ' nA v 20V,V. () T | Iptott rain Cutoff Current = , = ype (-8) (-a) 2] wy | 88 gs c . f 5| | Vestorn valtese Cutof -78 -3.4 -18| Vv | Vpg=20V,Ip=1HA Orain Current at Zero = = 6 ipss Gate Voltage 3.0], 15.0] 08 40} 02] 1.0] mA | Vps=20V, Ves =0 Common-Source Forward = s = 7 fs Transconductance 2500 | 10,000] 1500 6000 800; 4500 Vos = 20 V, Ves =0 f=1kHz mho Common-Source Output . 8 D Soss Conductance 38 #0 5 sy Vps = 30 V, Ves =0 f= 1 MHz N Common-Source Output 91 A] Coss Capacitance 5 5 5} pF _ JM t 18 18 18 pF Clea Common-Source Input = = = 10 Ciss Capacitance 10) 6) a) wv) V6s=OV,Vps=( ), f= 1MHz Vv = Ves=0, " NF Noise Figure 6 4 4] a8 a ve on : ae f= 20Hz . , gen = 1 meg, BW = ame * JEDEC registered data. NP = NOTES: 1. Due to symmetrical geometry, these units may be operated with source and drain leads interchanged. 2. Derate linearly to 200C free-air temperature at rate of 1.7 mW/C. 0 0 3 x 1979 Siliconix incorporated 3-7