Semiconductor Group 1 Apr-25-1997
BSM 400 GB 60 DN2
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
V
CE
I
CPackage Ordering Code
BSM 400 GB 60 DN2 600V 475A HALF-BRIDGE 2 C67070-A2120-A67
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CE 600 V
Collector-gate voltage
R
GE = 20 kΩ
V
CGR 600
Gate-emitter voltage
V
GE ± 20
DC collector current
T
C = 25 °C
T
C = 60 °C
I
C
400
475 A
Pulsed collector current,
t
p = 1 ms
T
C = 25 °C
T
C = 60 °C
I
Cpuls
800
950
Power dissipation per IGBT
T
C = 25 °C
P
tot 1400 W
Chip temperature
T
j+ 150 °C
Storage temperature
T
stg -40 ... + 125
Thermal resistance, chip case
R
thJC ≤ 0.09 K/W
Diode thermal resistance, chip case
R
thJCD≤ 0.18
Insulation test voltage,
t
= 1min.
V
is 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
Semiconductor Group 2 Apr-25-1997
BSM 400 GB 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE =
V
CE,
I
C = 9 mA
V
GE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
V
GE = 15 V
I
C = 400 A
T
j = 25 °C
T
j = 125 °C
V
CE(sat)
-
- 2.2
2.1 2.65
2.55
Zero gate voltage collector current
V
CE = 600 V,
V
GE = 0 V,
T
j = 25 °C
V
CE = 600 V,
V
GE = 0 V,
T
j = 125 °C
I
CES
-
- 25
5 -
-mA
Gate-emitter leakage current
V
GE = 20 V,
V
CE = 0 V
I
GES - - 1 µA
AC Characteristics
Transconductance
V
CE = 20 V,
I
C = 400 A
g
fs 100 - - S
Input capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
iss - 22 - nF
Output capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
oss - 2.5 -
Reverse transfer capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
rss - 1.5 -
Semiconductor Group 3 Apr-25-1997
BSM 400 GB 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
T
j = 125 °C
Turn-on delay time
V
CC = 300 V,
V
GE = 15 V,
I
C = 400 A
R
Gon = 4.7 Ω
t
d(on)
- 200 -
ns
Rise time
V
CC = 300 V,
V
GE = 15 V,
I
C = 400 A
R
Gon = 4.7 Ω
t
r
- 190 -
Turn-off delay time
V
CC = 300 V,
V
GE = -15 V,
I
C = 400 A
R
Goff = 4.7 Ω
t
d(off)
- 680 -
Fall time
V
CC = 300 V,
V
GE = -15 V,
I
C = 400 A
R
Goff = 4.7 Ω
t
f
- 510 -
Free-Wheel Diode
Diode forward voltage
I
F = 400 A,
V
GE = 0 V,
T
j = 25 °C
I
F = 400 A,
V
GE = 0 V,
T
j = 125 °C
V
F
-
- 1.7
1.9 -
2.4 V
Reverse recovery time
I
F = 400 A,
V
R = -300 V,
V
GE = 0 V
d
iF/
dt
= -2000 A/µs,
T
j = 125 °C
t
rr
- 170 -
ns
Reverse recovery charge
I
F = 400 A,
V
R = -300 V,
V
GE = 0 V
d
iF/
dt
= -2000 A/µs,
T
j = 125 °C
Q
rr
- 15 -
µC
Semiconductor Group 4 Apr-25-1997
BSM 400 GB 60 DN2
Power dissipation
P
tot = ƒ(
T
C)
parameter:
T
j ≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
W
1500
P
tot
Safe operating area
I
C = ƒ(
V
CE)
parameter:
D
= 0
, T
C = 25°C ,
T
j ≤ 150 °C
0
10
1
10
2
10
3
10
4
10
A
I
C
10 0 10 1 10 2 10 3
V
V
CE
DC
10 ms
1 ms
100 µs
t
p = 60.0µs
Collector current
I
C = ƒ(
T
C)
parameter:
V
GE ≥ 15 V ,
T
j ≤ 150 °C
020 40 60 80 100 120 °C 160
T
C
0
50
100
150
200
250
300
350
400
A
500
I
C
Transient thermal impedance IGBT
Z
th JC = ƒ(
t
p)
parameter:
D = t
p /
T
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 5 Apr-25-1997
BSM 400 GB 60 DN2
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p = 250 µs,
T
j = 25 °C
0 1 2 3 V 5
V
CE
0
100
200
300
400
500
600
A
800
I
C
17V
15V
13V
11V
9V
7V
Typ. output characteristics
I
C
= f (V
CE
)
parameter:
t
p = 250 µs,
T
j = 125 °C
0 1 2 3 V 5
V
CE
0
100
200
300
400
500
600
A
800
I
C
17V
15V
13V
11V
9V
7V
Typ. transfer characteristics
I
C
= f (V
GE
)
parameter:
t
p = 250 µs,
V
CE = 20 V
0246810 V 14
V
GE
0
100
200
300
400
500
600
A
800
I
C
Semiconductor Group 6 Apr-25-1997
BSM 400 GB 60 DN2
Typ. gate charge
V
GE = ƒ(
Q
Gate)
parameter:
I
C puls = 400 A
0.0 0.4 0.8 1.2 1.6 2.0 2.4 µC 3.2
Q
Gate
0
2
4
6
8
10
12
14
16
V
20
V
GE
300 V100 V
Typ. capacitances
C
=
f
(
V
CE)
parameter:
V
GE = 0 V, f = 1 MHz
0 5 10 15 20 25 30 V 40
V
CE
-1
10
0
10
1
10
2
10
nF
C Ciss
Coss
Crss
Reverse biased safe operating area
I
Cpuls
= f(V
CE
)
,
Tj = 150°C
parameter:
V
GE = 15 V
0100 200 300 400 500 600 V 800
V
CE
0.0
0.5
1.0
1.5
2.5
I
Cpuls/
I
C
Short circuit safe operating area
I
Csc
= f(V
CE
) ,
Tj = 150°C
parameter:
V
GE = ± 15 V,
t
SC ≤ 10 µs, L < 25 nH
0100 200 300 400 500 600 V 800
V
CE
0
2
4
6
8
12
I
Csc/
I
C
circuit: >1s
° time between short
short circuit: <1000
° allowed numbers of
di/dt = 500A/µs
1500A/µs
2500A/µs
Semiconductor Group 7 Apr-25-1997
BSM 400 GB 60 DN2
Typ. switching time
I = f (I
C
) ,
inductive load , Tj = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
R
G = 4.7 Ω
0200 400 600 A 1000
I
C
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching time
t = f (R
G
) ,
inductive load , Tj = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
I
C = 400 A
010 Ω30
R
G
1
10
2
10
3
10
4
10
ns
t
tdon
tr
tdoff
tf
Typ. switching losses
E = f (I
C
) ,
inductive load , Tj = 125°C
par.:
V
CE = 300 V,
V
GE = ± 15 V,
R
G = 4.7 Ω
0200 400 600 A 1000
I
C
0
20
40
60
80
mWs
120
E
Eon
Eoff
Typ. switching losses
E = f (R
G
) ,
inductive load
,
Tj = 125°C
par.:
V
CE = 300V,
V
GE = ± 15 V,
I
C = 400 A
010 Ω30
R
G
0
20
40
60
80
mWs
120
E
Eon
Eoff
Semiconductor Group 8 Apr-25-1997
BSM 400 GB 60 DN2
Forward characteristics of fast recovery
reverse diode
I
F
= f(V
F
)
parameter:
T
j
0.0 0.5 1.0 1.5 2.0 V 3.0
V
F
0
100
200
300
400
500
600
A
800
I
F
T
j=25°C
=125°C
j
T
Transient thermal impedance Diode
Z
th JC = ƒ(
t
p)
parameter:
D = t
p /
T
-4
10
-3
10
-2
10
-1
10
0
10
K/W
Z
thJC
10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
Semiconductor Group 9 Apr-25-1997
BSM 400 GB 60 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
