February 2008 Rev 3 1/7
7
TIP33C
TIP34C
Complementary power transistors
Features
■Low collector-emitter saturation voltage
■Complementary NPN - PNP transistors
Applications
■General purpose
Description
The devices are manufactured in epitaxial-base
planar technology and are suitable for power
linear and switching applications.
.
Figure 1. Internal schematic diagrams
Table 1. Device summary
TO-247
1
2
3
Order code Marking Package Packaging
TIP33C TIP33C
TO-247 Tube
TIP34C TIP34C
www.st.com
Electrical ratings TIP34C
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1 Electrical ratings
For PNP type voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
NPN TIP33C
PNP TIP34C
VCBO Collector-base voltage (IE = 0) 140 V
VCES Collector-emitter voltage (VBE = 0) 140 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 10 A
ICM Collector peak current (tP < 5 ms) 15 A
IBBase current 3 A
PTOT Total dissipation at Tcase = 25 °C 80 W
Tstg Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 1.56 °C/W
TIP34C Electrical characteristics
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2 Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICES
Collector cut-off current
(VBE = 0) VCE = 140 V 0.4 mA
ICEO
Collector cut-off current
(IB = 0) VCE = 60 V 0.7 mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5 V 1mA
VCEO(sus)(1)
1. Pulsed duration = 300 ms, duty cycle ≥ 1.5%.
Collector-emitter
sustaining voltage
(IB = 0)
IC = 30 mA 100 V
VCE(sat)(1) Collector-emitter
saturation voltage
IC = 3 A __ IB = 0.3 A
IC = 10 A _ IB = 2.5 A
1
4
V
V
VBE(on)(1) Base-emitter voltage IC = 3 A ___ VCE = 4 V
IC = 10 A __ VCE = 4 V
1.6
3
V
V
hFE (1) DC current gain IC = 1 A___ VCE = 4 V
IC = 3 A ___ VCE = 4 V
40
20 100
hfe Small signal current gain IC = 0.5 A_ VCE = 10 V
f = 1 kHz 3
fTTransition frequency IC = 0.5 A_ VCE = 10 V
f = 1 MHz 3MHz
ton
ts
tf
Resistive load
Turn-on time
Storage time
Fall time
VCC = 30 V IC = 6 A
IB1 = -IB2 = 0.6 A VBB = -6 V
tp = 20 µs
0.6
0.4
1
µs
µs
µs
Package mechanical data TIP34C
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3 Package mechanical data
In order to meet environmental requirements, ST offers these devices in
ECOPACK® packages. These packages have a Lead-free second level
interconnect . The category of second level interconnect is marked on the package
and on the inner box label, in compliance with JEDEC Standard JESD97. The
maximum ratings related to soldering conditions are also marked on the inner box
label. ECOPACK is an ST trademark. ECOPACK specifications are available at:
www.st.com
TIP34C Package mechanical data
5/7
Dim. mm.
Min. Typ Max.
A4.855.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b23.0 3.40
c0.40 0.80
D19.85 20.15
E 15.45 15.75
e5.45
L 14.20 14.80
L1 3.70 4.30
L2 18.50
øP 3.55 3.65
øR 4.50 5.50
S5.50
TO-247 Mechanical data
Revision history TIP34C
6/7
4 Revision history
Table 5. Document revision history
Date Revision Changes
01-Oct-1999 2
20-Feb-2008 3 Package change from TO-218 to TO-247.
TIP34C
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