IRF7416TRPBF - INFINEON TECHNOLOGIES AG

IRF7416PbF

HEXFET® Power MOSFET

lGeneration V Technology

lUltra Low On-Resistance

lP-Channel Mosfet

lSurface Mount

lAvailable in Tape & Reel

lDynamic dv/dt Rating

lFast Switching

lLead-Free

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of power

applications. With these improvements, multiple devices

can be used in an application with dramatically reduced

board space. The package is designed for vapor phase,

infra red, or wave soldering techniques. Power dissipation

of greater than 0.8W is possible in a typical PCB mount

application.

06/29/11

www.irf.com 1

Top View

8

1

2

3

45

6

7

D

DG

S

A

D

S

VDSS = -30V

RDS(on) = 0.02Ω

SO-8

Absolute Maximum Ratings

Parameter Max. Units

ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -10

ID @ TA = 70°C Continuous Drain Current, VGS @ -10V -7.1

IDM Pulsed Drain Current

c

-45

PD @TA = 25°C Power Dissipation 2.5

Linear Derating Factor 0.02 W/°C

VGS Gate-to-Source Voltage ± 20 V

EAS Single Pulse Avalanche Energy

d

370 mJ

dv/dt Peak Diode Recovery dv/dt

e

-5.0 V/ns

TJ Operating Junction and

TSTG Storage Temperature Range

Thermal Resistance

Parameter Max. Units

RθJA Junction-to-Ambient

g

50 °C/W

W

A

°C-55 to + 150

PD - 95137A

IRF7416PbF

2www.irf.com

S

D

G

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

ISD ≤ -5.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

 Starting TJ = 25°C, L = 25mH

RG = 25Ω, IAS = -5.6A. (See Figure 12)

 Pulse width ≤ 300µs; duty cycle ≤ 2%.

 Surface mounted on FR-4 board, t ≤ 10sec.

Static Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage

-30

–––

V

Δ

V

(BR)DSS

/

Δ

T

J

Breakdown Voltage Temp. Coefficient

–––

-0.024

–––

V/°C

–––

0.020

–––

0.035

V

GS(th)

Gate Threshold Voltage

-1.0

–––

-2.04

V

gfs

Forward Transconductance

5.6

–––

S

I

DSS

Drain-to-Source Leakage Current

–––

-1.0

–––

-25

I

GSS

Gate-to-Source Forward Leakage

–––

-100

Gate-to-Source Reverse Leakage

–––

100

Dynamic Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Q

g

Total Gate Charge

–––

61

92

Q

gs

Gate-to-Source Charge

–––

8.0

12

Q

gd

Gate-to-Drain ("Miller") Charge

–––

22

32

t

d(on)

Turn-On Delay Time

–––

18

–––

t

r

Rise Time

–––

49

–––

t

d(off)

Turn-Off Delay Time

–––

59

–––

t

f

Fall Time

–––

60

–––

C

iss

Input Capacitance

–––

1700

–––

C

oss

Output Capacitance

–––

890

–––

C

rss

Reverse Transfer Capacitance

–––

410

–––

Diode Characteristics

Parameter

Min.

Typ.

Max.

Units

I

S

Continuous Source Current

(Body Diode)

I

SM

Pulsed Source Current

(Body Diode)

c

V

SD

Diode Forward Voltage

–––

-1.0

V

t

rr

Reverse Recovery Time

–––

56

85

ns

T

J

= 25°C,I

F

= -5.6A

Q

rr

Reverse Recovery Charge

–––

99

150

nC

di/dt = 100A/μs

e

V

DS

= V

GS

, I

D

= -250μA

Conditions

V

DS

= -10V, I

D

= -2.8A

I

D

= -5.6A

V

GS

= -20V

R

DS(on)

Static Drain-to-Source On-Resistance ΩV

GS

= -4.5V, I

D

= -2.8A

f

Conditions

V

GS

= 0V, I

D

= -250μA

Reference to 25°C, I

D

= -1mA

V

GS

= -10V, I

D

= -5.6A

f

T

J

= 25°C, I

S

= -5.6A, V

GS

= 0V

e

integral reverse

p-n junction diode.

Conditions

MOSFET symbol

showing the

A

pF

ns

nC

V

DS

= -25V

ƒ = 1.0MHz, See Fig. 5

nA

μAV

DS

= -24V, V

GS

= 0V

V

DS

= -24V, V

GS

= 0V, T

J

= 125°C

V

GS

= -10V, See Fig. 6 & 9

f

V

GS

= 20V

V

DS

= -24V

V

DD

= -15V

I

D

= -5.6A

R

G

= 6.2

Ω

R

D

= 2.7

Ω,

See Fig. 10

f

V

GS

= 0V

-45

––– –––

-3.1

IRF7416PbF

www.irf.com 3

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

1

10

100

0.1 1 10

D

DS

20μs PULSE WIDTH

T = 25°C

A

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

J

-3.0V

VGS

TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

1

10

100

0.1 1 10

D

DS

A

-I , Drain-to-Source Current (A)

-V , Drain-to-Source Voltage (V)

-3.0V

VGS

TOP - 15V

- 10V

- 7.0V

- 5.5V

- 4.5V

- 4.0V

- 3.5V

BOTTOM - 3.0V

20μs PULSE WIDTH

T = 150°C

J

1

10

100

3.0 3.5 4.0 4.5 5.0 5.5

T = 25°C

T = 150°C

J

GS

D

A

-I , Drain-to-Source Current (A)

-V , Gate-to-Source Voltage (V)

V = -10V

20μs PULSE WIDTH

DS

0.0

0.5

1.0

1.5

2.0

-60 -40 -20 0 20 40 60 80 100 120 140 160

J

T , Junction Temperature (°C)

R , Drain-to-Source On Resistance

DS(on)

(Normalized)

A

V = -10V

GS

I = -5.6A

D

IRF7416PbF

4www.irf.com

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0

1000

2000

3000

4000

1 10 100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

0 20406080100

G

GS

A

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

V = -24V

V = -15V

DS

FOR TEST CIRCUIT

SEE FIGURE 9

I = -5.6A

D

1

10

100

0.4 0.6 0.8 1.0 1.2

T = 25°C

T = 150°C

J

V = 0V

GS

SD

A

-V , Source-to-Drain Voltage (V)

-I , Reverse Drain Current (A)

1

10

100

0.1 1 10 100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 150 C

= 25 C

°

J

A

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

DS

D

100us

1ms

10ms

IRF7416PbF

www.irf.com 5

0.1

1

10

100

0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

JDM thJA A

P

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

Fig 9a. Basic Gate Charge Waveform

Fig 9b. Gate Charge Test Circuit

+

-

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

VDD

RG

D.U.T.

-10V

D.U.T. VDS

ID

IG

-3mA

VGS

.3μF

50KΩ

.2μF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

-10V

Q

G

Q

GS

Q

GD

V

G

Charge

V

DS

90%

10%

V

GS

t

d(on)

t

r

t

d(off)

t

f

IRF7416PbF

6www.irf.com

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V

(

BR

)

DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

V

DD

DRIVER

A

15V

-20V

25 50 75 100 125 150

0

200

400

600

800

1000

Starting T , Junction Temperature ( C)

E , Single Pulse Avalanche Energy (mJ)

J

AS

o

ID

TOP

BOTTOM

-2.5A

-4.5A

-5.6A

IRF7416PbF

www.irf.com 7

P.W. Period

di/dt

Diode Recovery

dv/dt

Ripple ≤5%

Body Diode Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

V

GS

=10V

V

DD

I

SD

Driver Gate Drive

D.U.T. I

SD

Waveform

D.U.T. V

DS

Waveform

Inductor Curent

D = P. W .

Period

+

-

+

-







RG

VDD

• dv/dt controlled by RG

• ISD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer



* Reverse Polarity for P-Channel

** Use P-Channel Driver for P-Channel Measurements

*

VGS*

**

Peak Diode Recovery dv/dt Test Circuit

[ ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

[ ] ***

Fig 13. For P-Channel HEXFETS

IRF7416PbF

8www.irf.com

SO-8 Package Outline

Dimensions are shown in millimeters (inches)

SO-8 Part Marking

e1

D

E

y

b

A

A1

H

K

L

.189

.1497

0°

.013

.050 BASIC

.0532

.0040

.2284

.0099

.016

.1968

.1574

8°

.020

.0688

.0098

.2440

.0196

.050

4.80

3.80

0.33

1.35

0.10

5.80

0.25

0.40

0°

1.27 BAS IC

5.00

4.00

0.51

1.75

0.25

6.20

0.50

1.27

MI N MAX

MILLIMETERSINCHES

MIN MAX

DIM

8°

e

c .0075 .0098 0.19 0.25

.025 BASIC 0.635 BASIC

87

5

65

D B

E

A

e

6X

H

0.25 [.010] A

6

7

K x 45°

8X L 8X c

y

0.25 [.010] C A B

e1

A

A1

8X b

C

0.10 [.004]

4312

F OOT P R I N T

8X 0.72 [.028]

6.46 [.255]

3X 1.27 [.050]

4. OU T L I NE CONF OR MS T O JE DE C OU T L I NE MS - 012 AA.

NOT E S :

1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.

2. CONT R OL LING DIME NS ION: MILLIMET ER

3. DIME NS IONS ARE S HOWN IN MILL IME T E RS [INCHE S ].

5 DIME NS ION DOE S NOT INCL U DE MOL D PROT RU S IONS .

6 DIME NS ION DOE S NOT INCL U DE MOL D PROT RU S IONS .

MOLD PROTRUSIONS NOT TO EXCEE D 0.25 [.010].

7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO

A SUBST RAT E.

MOLD PROTRUSIONS NOT TO EXCEE D 0.15 [.006].

8X 1.78 [.070]

DAT E CODE (YWW)

XXXX

INTERNATIONAL

RECTIFIER

LOGO

F 7101

Y = LAST DIGIT OF THE YEAR

PART NUMBER

LOT CODE

WW = WEEK

EXAMPLE: T HIS IS AN IRF7101 (MOS F ET )

P = DE S I GNAT E S L E AD- F R E E

PRODUCT (OPTIONAL)

A = ASSEMBLY SITE CODE

IRF7416PbF

www.irf.com 9

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

330.00

(12.992)

MAX.

14.40 ( .566 )

12.40 ( .488 )

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

FEED DIRECTION

TERMINAL NUMBER 1

12.3 ( .484 )

11.7 ( .461 )

8.1 ( .318 )

7.9 ( .312 )

NOTES:

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

SO-8 Tape and Reel

Dimensions are shown in millimeters (inches)

IR WORLD HEADQUARTERS: 101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 06/2011