INTERSIL 2N3810/A, 2N3811/A Monolithic Dual Matched PNP Transistor ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature . 0.00.0... ccc e cece cere etter ee entree eee Operating Temperature ....... Lead Temperature (10 seconds) Maximum Power Dissipation Total Dissipation at ..... 6. ccc ccc erence entree ete eeeens One Side Both Sides 25C Ambient Temperature . 500 mw 600 mW Linear Derating Factor ........ccc cece cence ence cence tne eeeerneee 29mW/?C 3.4mW/C Maximum Voltage and Current (One side) Veso. Emitter to Base Voltage .. 00... ccc cece cence erent e teen rete ene teens Vcspo Collector to Base Voltage ........ . Vceo Collector to Emitter Voltage le OC Collector Current ...........5 ELECTRICAL CHARACTERISTICS TEST CONDITIONS: 25C Ambient Temperature uniess otherwise noted 1 SYMBOL CHARACTERISTIC TEST CONDITIONS IcBo Collector Cutoff Current : 10 -50V, Ic = 0 10 = Emitter Cutoff 20 -4.0V Collector to Base to Wyte it Wp uy a Base to Emitter wpapatul tata Hpi af Pa l mtu aly pupal wary \Vee1- | to Differential {A(Vge1-Vee2)| | Base to Voltage Differentia! Gradient Will Wy a Current Gain Vy at i puppet py Wy aly wp aly Wy Wy pa PBW = 200 =3.0kn Ilo = =~-10V, f = 10 kHz, PBW = 2.0 = 3.0 kn = VceE = 10V, f = 100 Hz, PBW = 20 =3.0kn Ic =1 Vce = -10V, = ko 3.0 dB down at 10 Hz and 10 kHz = 18.7 KHz : 1-532N3810/A, 2N3811/A INTERSIL PIN CHIP CONFIGURATION TOPOGRAPHY ORDERING INFORMATION TO-78 4503 TO.78 WAFER DICE + - See 2N3810 | 2N3810/W__| 2N3810/D F couecror =1J F SouECTOR ISOLATION OMS 5, OOS 2N3810A | 2N3810AW | 2N3810A/D 0239 =2 TYP. 2 PLACES 2N3811 2N3811/W 2N3811/D on Dore * ose 2N3811A | 2N3811A/W | 2N3811A/D ~ BASE =2 TYP. 2 PLACES BASE pong DIAMETER A =1 > {Pel ep cmrseR =) Fee 2eLACES ggsg DIAMETER Ee By Cy ELECTRICAL CONDITIONS TEST CONDITIONS: 25C Ambient Temperature unless otherwise noted SYMBOL CHARACTERISTIC UNITS TEST CONDITIONS IcBo Collector Cutoff Current 10 nA -50V, Ic = 0 = =14 to = Wy ll Oyo pw wis o well yal yf ule Base to Emitter WUE Wp PRP Py a Wha fale tyadny nf ebay! {VBe1-VBE2| Base to When Wy ay tt | A(Vee1-VBE2)/ to Differential Gradient oe v u hla cr So < u ALY tl tl nf lt wreayupayny yy UU a ua Wea eh a Ic = 104A, Vce = -10V, f = 10 kHz, PBW = 2.0 = 3.0 ka PBW = 20 Hz, Ra = 3.0 k0 3 dB down at 10 Hz and 10 kHz 1-54