BC817K-40W H6327 - Infineon Technologies

2011-09-19

1

BC817K.../BC818K...

NPN Silicon AF Transistor

• For general AF applications

• High collector current

• High current gain

• Low collector-emitter saturation voltage

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BC817K-16

BC817K-16W

BC817K-25

BC817K-25W

BC817K-40

BC817K-40W

BC818K-16W

BC818K-40

6As

6Bs

6Cs

6Es

6Gs

1 = B

2 = E

3 = C

-

SOT23

SOT323

SOT23

SOT323

SOT23

SOT323

SOT23

2011-09-19

2

BC817K.../BC818K...

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

BC817...

BC818...

VCEO

45

25

V

Collector-base voltage

BC817...

BC818...

VCBO

50

30

Emitter-base voltage VEBO 5

Collector current IC500 mA

Peak collector current ICM 1000

Base current IB100

Peak base current IBM 200

Total power dissipation-

TS ≤ 115 °C, BC817K, BC818K

TS ≤ 130 °C, BC817KW, BC818KW

Ptot

500

250

mW

Junction temperature Tj150 °C

Storage temperature Tst

g

-65 ... 150

Thermal Resistance

Parameter Symbol Value Unit

Junction - soldering point1)

BC817K, BC818K

BC817KW, BC818KW

RthJS

≤ 70

≤ 80

K/W

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

2011-09-19

3

BC817K.../BC818K...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BC817...

IC = 10 mA, IB = 0 , BC818...

V(BR)CEO

45

25

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BC817...

IC = 10 µA, IE = 0 , BC818...

V(BR)CBO

50

30

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO 5 - - V

Collector-base cutoff current

VCB = 25 V, IE = 0

VCB = 25 V, IE = 0 , TA = 150 °C

ICBO

-

0.1

50

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO - - 100 nA

DC current gain1)

IC = 100 mA, VCE = 1 V, hFE-grp.16

IC = 100 mA, VCE = 1 V, hFE-grp.25

IC = 100 mA, VCE = 1 V, hFE-grp.40

IC = 500 mA, VCE = 1 V, all hFE-grps.

hFE

100

160

250

40

160

250

350

-

250

400

630

-

Collector-emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VCEsat - - 0.7 V

Base emitter saturation voltage1)

IC = 500 mA, IB = 50 mA

VBEsat - - 1.2

1Pulse test: t < 300µs; D < 2%

2011-09-19

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BC817K.../BC818K...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

fT- 170 - MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb - 3 - pF

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb - 40 -

2011-09-19

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BC817K.../BC818K...

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp.16

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

A

IC

1

10

2

10

3

10

hFE

105 °C

85 °C

65 °C

25 °C

-40 °C

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp.40

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

A

IC

1

10

2

10

3

10

hFE

105 °C

85 °C

65 °C

25 °C

-40 °C

DC current gain hFE = ƒ(IC)

VCE = 1 V

hFE-grp.25

10 -5 10 -4 10 -3 10 -2 10 -1 10 0

A

IC

1

10

2

10

3

10

hFE

105 °C

85 °C

65 °C

25 °C

-40 °C

Collector-emitter saturation voltage

IC = ƒ(VCEsat), hFE = 10

0

10

EHP00223BC 817/818

CEsat

V

0.4 V 0.8

-1

10

0

10

1

3

10

5

Ι

C

mA

5

2

10

0.2 0.6

˚C

-50

25

˚C

150

˚C

2011-09-19

6

BC817K.../BC818K...

Base-emitter saturation voltage

IC = ƒ(VBEsat), hFE = 10

0

10

EHP00222BC 817/818

BEsat

V

2.0 V 4.0

-1

100

101

3

10

5

Ι

CmA

5

2

10

1.0 3.0

˚C

-50

25

˚C

150

Collector cutoff current ICBO = ƒ(TA)

VCBO = 25 V

0

10

EHP00221BC 817/818

A

T

150

0

5

10

Ι

CBO nA

50 100

1

10

2

10

4

10

˚C

typ

max

103

Transition frequency fT = ƒ(IC)

VCE = parameter in V, f = 2 GHz

10

EHP00218BC 817/818

03

10mA

1

10

3

10

5

10

1

10

2

10

2

C

T

fMHz

Ι

Collector-base capacitance Ccb = ƒ(VCB)

Emitter-base capacitance Ceb = ƒ(VEB)

BC817K, BC818K

0 2 4 6 8 10 12 14 16 V20

VCB/VEB

0

5

10

15

20

25

30

35

40

45

pF

55

CCB/CEB

CCB

CEB

2011-09-19

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BC817K.../BC818K...

Total power dissipation Ptot = ƒ(TS)

BC817K, BC818K

0 15 30 45 60 75 90 105 120 150

0

50

100

150

200

250

300

350

400

450

550

Total power dissipation Ptot = ƒ(TS)

BC817KW, BC818KW

0 15 30 45 60 75 90 105 120 °C 150

TS

0

50

100

150

200

250

300

350

400

450

mW

550

Ptot

Permissible Pulse Load RthJS = ƒ(tp)

BC817K, BC818K

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

TP

-1

10

0

10

1

10

2

10

RthJS

D = 0,5

0,2

0,1

0,05

0,02

0,01

0,005

0

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

BC817K, BC818K

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

TP

0

10

1

10

2

10

3

10

-

Ptotmax/PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

2011-09-19

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BC817K.../BC818K...

Permissible Puls Load RthJS = ƒ (tp)

BC817KW, BC818KW

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-1

10

0

10

1

10

2

10

3

10

K/W

RthJS

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

Permissible Pulse Load

Ptotmax/PtotDC = ƒ(tp)

BC817KW, BC818KW

10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

0

10

1

10

2

10

3

10

-

Ptotmax/PtotDC

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

2011-09-19

9

BC817K.../BC818K...

Package SOT23

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

EH

s

BCW66

Type code

Pin 1

0.8

0.9 0.91.3

0.8 1.2

0.25

M

BC

1.9

-0.05

+0.1

0.4

±0.1

2.9

0.95

C

B

0...8˚

0.2 A

0.1 MAX.

10˚ MAX.

0.08...0.15

1.3

±0.1

10˚ MAX.

M

2.4

±0.15

±0.1

1

A

0.15 MIN.

1)

1) Lead width can be 0.6 max. in dambar area

12

3

3.15

4

2.65

2.13

0.9

8

0.2

1.15

Pin 1

Manufacturer

2005, June

Date code (YM)

2011-09-19

10

BC817K.../BC818K...

Package SOT323

Package Outline

Foot Print

Marking Layout (Example)

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

1.25

±0.1

0.1 MAX.

2.1

±0.1

0.15 +0.1

-0.05

0.3+0.1

±0.1

0.9

12

3

A

±0.2

2

-0.05

0.650.65

M

3x

0.1

0.1 MIN.

0.1

M

0.2 A

0.2

4

2.15 1.1

8

2.3

Pin 1

2005, June

Date code (YM)

BCR108W

Type code

0.6

0.8

1.6

0.65

Manufacturer

2011-09-19

11

BC817K.../BC818K...

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be

endangered.